TW200802586A - Substrate processing apparatus, substrate processing method and storage medium - Google Patents

Substrate processing apparatus, substrate processing method and storage medium

Info

Publication number
TW200802586A
TW200802586A TW96110867A TW96110867A TW200802586A TW 200802586 A TW200802586 A TW 200802586A TW 96110867 A TW96110867 A TW 96110867A TW 96110867 A TW96110867 A TW 96110867A TW 200802586 A TW200802586 A TW 200802586A
Authority
TW
Taiwan
Prior art keywords
substrate processing
chamber
esc
wafer
hydrogen fluoride
Prior art date
Application number
TW96110867A
Other languages
Chinese (zh)
Inventor
Eiichi Nishimura
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200802586A publication Critical patent/TW200802586A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

Provided is a substrate processing apparatus which can be arranged with a high degree of freedom and efficiently removes an oxide layer. A second process unit (34) of a second process ship (12) is provided with a chamber (38) for storing a wafer (W) whereupon a deposit film (126) having an SiO2 layer (123) is formed; an ESC (39) arranged in the chamber (38) for placing the wafer (W); a heater (103) for a shower head (40) arranged to face the ESC (39); a plurality of pusher pins (56) which can be freely protruded from the upper surface of the ESC (39); an ammonia gas supply system (105) for supplying ammonia gas into the chamber (38); and hydrogen fluoride gas supply system (127) for supplying hydrogen fluoride gas into the chamber (38). The pusher pin (56) transfers the wafer (W), on which a product generated from the SiO2 layer (123), ammonia gas and the hydrogen fluoride gas, is transferred to the vicinity of the heater (103).
TW96110867A 2006-03-29 2007-03-28 Substrate processing apparatus, substrate processing method and storage medium TW200802586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006091635A JP2007266455A (en) 2006-03-29 2006-03-29 Substrate processing apparatus and method, and storage medium

Publications (1)

Publication Number Publication Date
TW200802586A true TW200802586A (en) 2008-01-01

Family

ID=38581141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96110867A TW200802586A (en) 2006-03-29 2007-03-28 Substrate processing apparatus, substrate processing method and storage medium

Country Status (3)

Country Link
JP (1) JP2007266455A (en)
TW (1) TW200802586A (en)
WO (1) WO2007116851A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
WO2013183437A1 (en) * 2012-06-08 2013-12-12 東京エレクトロン株式会社 Gas treatment method
US9368370B2 (en) * 2014-03-14 2016-06-14 Applied Materials, Inc. Temperature ramping using gas distribution plate heat
JP6568769B2 (en) 2015-02-16 2019-08-28 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
US10622205B2 (en) 2015-02-16 2020-04-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP6643045B2 (en) 2015-11-05 2020-02-12 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP6692202B2 (en) * 2016-04-08 2020-05-13 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03211822A (en) * 1990-01-17 1991-09-17 Fujitsu Ltd Semiconductor manufacturing equipment
JP3357991B2 (en) * 1991-07-15 2002-12-16 株式会社アルバック Electrostatic suction device
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JP4477704B2 (en) * 1997-11-20 2010-06-09 アイメック Method for removing organic contaminants from semiconductor substrate surface
JP2001291710A (en) * 2001-02-15 2001-10-19 Tokyo Electron Ltd Heat treatment device and method
JP2003209096A (en) * 2002-01-16 2003-07-25 Sekisui Chem Co Ltd Plasma etching treatment method and device therefor
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling

Also Published As

Publication number Publication date
JP2007266455A (en) 2007-10-11
WO2007116851A1 (en) 2007-10-18

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