SG11201400460WA - Composition for forming fine resist pattern and pattern forming method using same - Google Patents

Composition for forming fine resist pattern and pattern forming method using same

Info

Publication number
SG11201400460WA
SG11201400460WA SG11201400460WA SG11201400460WA SG11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA SG 11201400460W A SG11201400460W A SG 11201400460WA
Authority
SG
Singapore
Prior art keywords
pattern
composition
same
forming
fine resist
Prior art date
Application number
SG11201400460WA
Other languages
English (en)
Inventor
Tetsuo Okayasu
Takashi Sekito
Masahiro Ishii
Original Assignee
Az Electronic Materials Ip Japan K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Ip Japan K K filed Critical Az Electronic Materials Ip Japan K K
Publication of SG11201400460WA publication Critical patent/SG11201400460WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/52—Amides or imides
    • C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
    • C08F220/56—Acrylamide; Methacrylamide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201400460WA 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same SG11201400460WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011224030A JP5758263B2 (ja) 2011-10-11 2011-10-11 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
PCT/JP2012/076167 WO2013054803A1 (ja) 2011-10-11 2012-10-10 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
SG11201400460WA true SG11201400460WA (en) 2014-05-29

Family

ID=48081858

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201400460WA SG11201400460WA (en) 2011-10-11 2012-10-10 Composition for forming fine resist pattern and pattern forming method using same

Country Status (7)

Country Link
US (2) US9448485B2 (ja)
JP (1) JP5758263B2 (ja)
KR (1) KR101681524B1 (ja)
CN (1) CN103858058B (ja)
SG (1) SG11201400460WA (ja)
TW (1) TWI617880B (ja)
WO (1) WO2013054803A1 (ja)

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JP6134619B2 (ja) * 2013-09-13 2017-05-24 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP6340304B2 (ja) * 2013-11-29 2018-06-06 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6286227B2 (ja) * 2014-02-21 2018-02-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6531397B2 (ja) 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
US9529265B2 (en) * 2014-05-05 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of preparing and using photosensitive material
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤
US9448483B2 (en) * 2014-07-31 2016-09-20 Dow Global Technologies Llc Pattern shrink methods
KR101994793B1 (ko) * 2014-09-02 2019-07-01 후지필름 가부시키가이샤 패턴 형성 방법, 전자 디바이스의 제조 방법, 레지스트 조성물, 및 레지스트막
KR102480056B1 (ko) 2014-10-17 2022-12-21 도오꾜오까고오교 가부시끼가이샤 레지스트 패턴 형성 방법
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
CN107430355B (zh) * 2015-03-31 2023-07-14 日产化学工业株式会社 抗蚀剂图案被覆用涂布液及图案的形成方法
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US10280357B2 (en) 2015-10-14 2019-05-07 CNPC USA Corp. High density and high temperature emulsifier for use in an oil based drilling fluid system
US9963630B2 (en) 2015-11-18 2018-05-08 Cnpc Usa Corporation Method for a fracturing fluid system at high temperatures
JP2018537703A (ja) * 2015-11-19 2018-12-20 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP2017165846A (ja) * 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
KR101730838B1 (ko) * 2016-05-04 2017-04-28 영창케미칼 주식회사 네가톤 포토레지스트를 이용한 패터닝 공정에서 lwr 개선 방법과 조성물
KR101819992B1 (ko) 2016-06-24 2018-01-18 영창케미칼 주식회사 포토레지스트 패턴 축소 조성물과 패턴 축소 방법

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Also Published As

Publication number Publication date
US9448485B2 (en) 2016-09-20
CN103858058B (zh) 2018-03-13
JP5758263B2 (ja) 2015-08-05
KR101681524B1 (ko) 2016-12-01
TW201324037A (zh) 2013-06-16
US20150017587A1 (en) 2015-01-15
JP2013083818A (ja) 2013-05-09
KR20140090189A (ko) 2014-07-16
TWI617880B (zh) 2018-03-11
US20160327867A1 (en) 2016-11-10
WO2013054803A1 (ja) 2013-04-18
CN103858058A (zh) 2014-06-11

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