SG11201400191QA - Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods - Google Patents
Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methodsInfo
- Publication number
- SG11201400191QA SG11201400191QA SG11201400191QA SG11201400191QA SG11201400191QA SG 11201400191Q A SG11201400191Q A SG 11201400191QA SG 11201400191Q A SG11201400191Q A SG 11201400191QA SG 11201400191Q A SG11201400191Q A SG 11201400191QA SG 11201400191Q A SG11201400191Q A SG 11201400191QA
- Authority
- SG
- Singapore
- Prior art keywords
- devices
- methods
- solid state
- electrostatic discharge
- discharge protection
- Prior art date
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Elimination Of Static Electricity (AREA)
- Semiconductor Lasers (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/223,098 US8809897B2 (en) | 2011-08-31 | 2011-08-31 | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
PCT/US2012/050866 WO2013032701A2 (fr) | 2011-08-31 | 2012-08-15 | Dispositifs transducteurs à semi-conducteurs, notamment dispositifs avec protection intégrée contre les décharges électrostatiques, et systèmes et procédés associés |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201400191QA true SG11201400191QA (en) | 2014-07-30 |
Family
ID=47742375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201400191QA SG11201400191QA (en) | 2011-08-31 | 2012-08-15 | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
Country Status (8)
Country | Link |
---|---|
US (8) | US8809897B2 (fr) |
EP (1) | EP2751838B1 (fr) |
JP (1) | JP6109174B2 (fr) |
KR (1) | KR101675652B1 (fr) |
CN (1) | CN103765586B (fr) |
SG (1) | SG11201400191QA (fr) |
TW (1) | TWI493678B (fr) |
WO (1) | WO2013032701A2 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US9490239B2 (en) | 2011-08-31 | 2016-11-08 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
US8809897B2 (en) | 2011-08-31 | 2014-08-19 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
US9847372B2 (en) * | 2011-12-01 | 2017-12-19 | Micron Technology, Inc. | Solid state transducer devices with separately controlled regions, and associated systems and methods |
US9419182B2 (en) * | 2012-01-05 | 2016-08-16 | Micron Technology, Inc. | Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods |
US9450152B2 (en) | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
KR102085897B1 (ko) * | 2013-06-10 | 2020-03-06 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
DE102014105188A1 (de) * | 2014-04-11 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Halbleiterchip, optoelektronisches Bauelement mit Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
DE102015116970A1 (de) * | 2015-10-06 | 2017-04-06 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und Verfahren zur Herstellung eines Halbleiterlasers |
DE112016006010T5 (de) * | 2015-12-24 | 2019-01-24 | Vuereal Inc. | Vertikale Festkörpervorrichtungen |
DE102016125430A1 (de) * | 2016-12-22 | 2018-06-28 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür |
US11721784B2 (en) | 2017-03-30 | 2023-08-08 | Vuereal Inc. | High efficient micro devices |
WO2018178951A1 (fr) | 2017-03-30 | 2018-10-04 | Vuereal Inc. | Dispositifs à semi-conducteurs verticaux |
US11600743B2 (en) | 2017-03-30 | 2023-03-07 | Vuereal Inc. | High efficient microdevices |
EP4002459A1 (fr) * | 2020-11-23 | 2022-05-25 | Infineon Technologies AG | Procédé de fabrication d'un circuit de protection contre les décharges électrostatiques et circuit de protection contre les décharges électrostatiques |
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2011
- 2011-08-31 US US13/223,098 patent/US8809897B2/en active Active
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2012
- 2012-08-15 CN CN201280042001.1A patent/CN103765586B/zh active Active
- 2012-08-15 WO PCT/US2012/050866 patent/WO2013032701A2/fr active Application Filing
- 2012-08-15 KR KR1020147006476A patent/KR101675652B1/ko active IP Right Grant
- 2012-08-15 SG SG11201400191QA patent/SG11201400191QA/en unknown
- 2012-08-15 EP EP12827519.5A patent/EP2751838B1/fr active Active
- 2012-08-15 JP JP2014528429A patent/JP6109174B2/ja active Active
- 2012-08-23 TW TW101130698A patent/TWI493678B/zh active
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2014
- 2014-08-14 US US14/460,297 patent/US9373661B2/en active Active
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2016
- 2016-06-20 US US15/187,022 patent/US9978807B2/en active Active
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2018
- 2018-05-10 US US15/976,805 patent/US10361245B2/en active Active
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2019
- 2019-06-13 US US16/440,720 patent/US10615221B2/en active Active
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2020
- 2020-02-25 US US16/800,287 patent/US11195876B2/en active Active
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2021
- 2021-12-01 US US17/539,528 patent/US11688758B2/en active Active
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2023
- 2023-05-08 US US18/313,638 patent/US20230275113A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20160372513A1 (en) | 2016-12-22 |
KR20140053306A (ko) | 2014-05-07 |
WO2013032701A2 (fr) | 2013-03-07 |
US20200194492A1 (en) | 2020-06-18 |
US20190312081A1 (en) | 2019-10-10 |
US20220165784A1 (en) | 2022-05-26 |
US20230275113A1 (en) | 2023-08-31 |
EP2751838B1 (fr) | 2024-04-24 |
US10361245B2 (en) | 2019-07-23 |
TWI493678B (zh) | 2015-07-21 |
US11195876B2 (en) | 2021-12-07 |
WO2013032701A3 (fr) | 2013-07-11 |
US8809897B2 (en) | 2014-08-19 |
US9373661B2 (en) | 2016-06-21 |
US20150171138A1 (en) | 2015-06-18 |
US11688758B2 (en) | 2023-06-27 |
US9978807B2 (en) | 2018-05-22 |
CN103765586A (zh) | 2014-04-30 |
JP6109174B2 (ja) | 2017-04-05 |
US10615221B2 (en) | 2020-04-07 |
EP2751838A4 (fr) | 2015-05-20 |
US20130049059A1 (en) | 2013-02-28 |
JP2014525686A (ja) | 2014-09-29 |
TW201316482A (zh) | 2013-04-16 |
KR101675652B1 (ko) | 2016-11-11 |
CN103765586B (zh) | 2016-08-17 |
EP2751838A2 (fr) | 2014-07-09 |
US20180261646A1 (en) | 2018-09-13 |
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