SG111304A1 - System and method for storing data in an unpatterned, continuous magnetic layer - Google Patents
System and method for storing data in an unpatterned, continuous magnetic layerInfo
- Publication number
- SG111304A1 SG111304A1 SG200406873A SG200406873A SG111304A1 SG 111304 A1 SG111304 A1 SG 111304A1 SG 200406873 A SG200406873 A SG 200406873A SG 200406873 A SG200406873 A SG 200406873A SG 111304 A1 SG111304 A1 SG 111304A1
- Authority
- SG
- Singapore
- Prior art keywords
- unpatterned
- magnetic layer
- storing data
- continuous magnetic
- continuous
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/685,835 US6970379B2 (en) | 2003-10-14 | 2003-10-14 | System and method for storing data in an unpatterned, continuous magnetic layer |
Publications (1)
Publication Number | Publication Date |
---|---|
SG111304A1 true SG111304A1 (en) | 2005-05-30 |
Family
ID=34423215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200406873A SG111304A1 (en) | 2003-10-14 | 2004-09-24 | System and method for storing data in an unpatterned, continuous magnetic layer |
Country Status (5)
Country | Link |
---|---|
US (2) | US6970379B2 (zh) |
JP (1) | JP4516817B2 (zh) |
CN (1) | CN1612262B (zh) |
SG (1) | SG111304A1 (zh) |
TW (1) | TWI309415B (zh) |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004032149A1 (en) * | 2002-10-03 | 2004-04-15 | Koninklijke Philips Electronics N.V. | Read-only magnetic memory device mrom |
GB0304610D0 (en) * | 2003-02-28 | 2003-04-02 | Eastgate Invest Ltd | Magnetic logic system |
US20050157597A1 (en) * | 2003-05-29 | 2005-07-21 | Seagate Technology Llc | Optimized media grain packing fraction for bit patterned magnetic recording media |
US8345374B2 (en) | 2003-05-29 | 2013-01-01 | Seagate Technology, Llc | Patterned media for heat assisted magnetic recording |
US6970379B2 (en) * | 2003-10-14 | 2005-11-29 | International Business Machines Corporation | System and method for storing data in an unpatterned, continuous magnetic layer |
KR20070072522A (ko) * | 2004-10-27 | 2007-07-04 | 각고호우징 게이오기주크 | 자기 저항 효과 소자 및 자기 메모리 장치 |
US7304360B2 (en) | 2005-07-12 | 2007-12-04 | Magic Technologies, Inc. | Method of forming super-paramagnetic cladding material on conductive lines of MRAM devices |
DE102005040612A1 (de) * | 2005-08-27 | 2007-03-01 | Behr Gmbh & Co. Kg | Abgaswärmeübertrager |
KR100754394B1 (ko) * | 2006-01-26 | 2007-08-31 | 삼성전자주식회사 | 마그네틱 도메인 드래깅을 이용하는 자성소자 유닛 및 그작동 방법 |
KR100718153B1 (ko) * | 2006-02-17 | 2007-05-14 | 삼성전자주식회사 | 마그네틱 도메인 이동을 이용한 자기메모리 |
KR100754397B1 (ko) * | 2006-02-22 | 2007-08-31 | 삼성전자주식회사 | 마그네틱 도메인 이동을 이용한 자기메모리 |
KR100695171B1 (ko) * | 2006-02-23 | 2007-03-14 | 삼성전자주식회사 | 마그네틱 도메인 이동을 이용하는 자기 메모리 장치 |
WO2007119708A1 (ja) | 2006-04-11 | 2007-10-25 | Nec Corporation | 磁気ランダムアクセスメモリ |
US7710770B2 (en) * | 2006-05-09 | 2010-05-04 | Ingenia Holdings Uk Limited | Data storage device and method |
KR100813261B1 (ko) * | 2006-07-13 | 2008-03-13 | 삼성전자주식회사 | 자구벽 이동을 이용한 반도체 장치 |
KR100745767B1 (ko) * | 2006-07-25 | 2007-08-02 | 삼성전자주식회사 | 자구벽 이동을 이용한 반도체 장치 |
KR100790885B1 (ko) * | 2006-09-15 | 2008-01-02 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치 |
KR100790886B1 (ko) * | 2006-09-15 | 2008-01-03 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치 |
KR100837403B1 (ko) * | 2006-09-15 | 2008-06-12 | 삼성전자주식회사 | 자구 벽 이동을 이용한 정보 저장 장치의 정보 기록 방법및 정보 읽기 방법 |
US7950587B2 (en) * | 2006-09-22 | 2011-05-31 | The Board of Regents of the Nevada System of Higher Education on behalf of the University of Reno, Nevada | Devices and methods for storing data |
KR100813270B1 (ko) | 2006-09-29 | 2008-03-13 | 삼성전자주식회사 | 자구벽 이동을 이용한 데이터 저장 장치 및 그의 동작 방법 |
JP4969981B2 (ja) * | 2006-10-03 | 2012-07-04 | 株式会社東芝 | 磁気記憶装置 |
KR100829569B1 (ko) * | 2006-10-18 | 2008-05-14 | 삼성전자주식회사 | 자구벽 이동을 이용한 반도체 장치 및 그의 제조방법 |
KR100829571B1 (ko) * | 2006-10-27 | 2008-05-14 | 삼성전자주식회사 | 자구벽 이동을 이용한 데이터 저장 장치 및 그의 동작 방법 |
KR100829576B1 (ko) * | 2006-11-06 | 2008-05-14 | 삼성전자주식회사 | 자구벽 이동을 이용한 데이터 저장 장치 및 그의 동작 방법 |
KR100868761B1 (ko) | 2006-11-20 | 2008-11-13 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 매체 |
KR100873637B1 (ko) | 2006-11-28 | 2008-12-12 | 삼성전자주식회사 | 자기장 인가부를 이용한 자구벽 이동 장치 및 이를 이용한메모리 장치 |
KR100785033B1 (ko) * | 2006-12-06 | 2007-12-12 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
US8300456B2 (en) | 2006-12-06 | 2012-10-30 | Nec Corporation | Magnetic random access memory and method of manufacturing the same |
KR100846504B1 (ko) | 2006-12-08 | 2008-07-17 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 |
KR100837412B1 (ko) * | 2006-12-12 | 2008-06-12 | 삼성전자주식회사 | 멀티 스택 메모리 소자 |
KR100846509B1 (ko) | 2006-12-22 | 2008-07-17 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
US8054666B2 (en) * | 2006-12-22 | 2011-11-08 | Samsung Electronics Co., Ltd. | Information storage devices using magnetic domain wall movement and methods of manufacturing the same |
KR100846510B1 (ko) * | 2006-12-22 | 2008-07-17 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
US7710769B2 (en) * | 2007-05-09 | 2010-05-04 | Ingenia Holdings Uk Limited | Data storage device and method |
WO2009001706A1 (ja) | 2007-06-25 | 2008-12-31 | Nec Corporation | 磁気抵抗効果素子、および磁気ランダムアクセスメモリ |
WO2009019949A1 (ja) | 2007-08-03 | 2009-02-12 | Nec Corporation | 磁気ランダムアクセスメモリ及びその製造方法 |
WO2009019947A1 (ja) | 2007-08-03 | 2009-02-12 | Nec Corporation | 磁壁ランダムアクセスメモリ |
KR101288477B1 (ko) * | 2007-08-10 | 2013-07-26 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 |
US8194436B2 (en) | 2007-09-19 | 2012-06-05 | Nec Corporation | Magnetic random access memory, write method therefor, and magnetoresistance effect element |
US7986493B2 (en) * | 2007-11-28 | 2011-07-26 | Seagate Technology Llc | Discrete track magnetic media with domain wall pinning sites |
KR100907471B1 (ko) * | 2007-12-06 | 2009-07-13 | 고려대학교 산학협력단 | 나노선 및 이를 이용한 전류 인가 자벽 이동을 이용한메모리 소자 |
KR101438147B1 (ko) | 2008-01-16 | 2014-09-17 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보저장장치와 그의 동작 및제조방법 |
JP5441005B2 (ja) | 2008-02-13 | 2014-03-12 | 日本電気株式会社 | 磁壁移動素子及び磁気ランダムアクセスメモリ |
KR101435516B1 (ko) * | 2008-02-14 | 2014-08-29 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보저장장치 및 그 동작방법 |
KR20090090160A (ko) * | 2008-02-20 | 2009-08-25 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보저장장치 및 그 동작방법 |
US8242776B2 (en) * | 2008-03-26 | 2012-08-14 | Everspin Technologies, Inc. | Magnetic sensor design for suppression of barkhausen noise |
KR101431761B1 (ko) * | 2008-06-24 | 2014-08-21 | 삼성전자주식회사 | 정보저장장치 및 그의 동작방법 |
US8228706B2 (en) * | 2008-07-07 | 2012-07-24 | International Business Machines Corporation | Magnetic shift register memory device |
US7626844B1 (en) | 2008-08-22 | 2009-12-01 | International Business Machines Corporation | Magnetic racetrack with current-controlled motion of domain walls within an undulating energy landscape |
JP4640486B2 (ja) | 2008-10-16 | 2011-03-02 | ソニー株式会社 | 情報記憶素子、及び、情報記憶素子における情報書込み・読出し方法 |
JP4640489B2 (ja) | 2008-10-20 | 2011-03-02 | ソニー株式会社 | 情報記憶素子、及び、情報記憶素子における情報書込み・読出し方法 |
IT1392999B1 (it) * | 2009-02-12 | 2012-04-02 | Ct De Investigacion Cooperativa En Nanociencias Cic Nanogune Asoc | Manipolazione di particelle magnetiche in circuiti per la propagazione di pareti di dominio magnetiche. |
US8406029B2 (en) | 2009-02-17 | 2013-03-26 | Samsung Electronics Co., Ltd. | Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
US8050074B2 (en) * | 2009-02-17 | 2011-11-01 | Samsung Electronics Co., Ltd. | Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices |
WO2010095589A1 (ja) | 2009-02-17 | 2010-08-26 | 日本電気株式会社 | 磁気抵抗効果素子、及び磁気ランダムアクセスメモリ |
US7969774B2 (en) * | 2009-03-10 | 2011-06-28 | Micron Technology, Inc. | Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices |
FR2945147B1 (fr) * | 2009-04-30 | 2012-03-30 | Thales Sa | Dispositif memristor a resistance ajustable grace au deplacement d'une paroi magnetique par transfert de spin et utilisation dudit memristor dans un reseau de neurones |
US8279667B2 (en) * | 2009-05-08 | 2012-10-02 | Samsung Electronics Co., Ltd. | Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement |
TWI424433B (zh) * | 2009-06-23 | 2014-01-21 | Ind Tech Res Inst | 磁性移位暫存記憶體與讀取方法 |
US8390283B2 (en) * | 2009-09-25 | 2013-03-05 | Everspin Technologies, Inc. | Three axis magnetic field sensor |
US9196280B2 (en) * | 2009-11-12 | 2015-11-24 | Marquette University | Low-field magnetic domain wall injection pad and high-density storage wire |
US8164940B2 (en) * | 2009-12-15 | 2012-04-24 | Hitachi Global Storage Technologies Netherlands, B.V. | Read/write structures for a three dimensional memory |
US8518734B2 (en) | 2010-03-31 | 2013-08-27 | Everspin Technologies, Inc. | Process integration of a single chip three axis magnetic field sensor |
DE102010003811A1 (de) | 2010-04-09 | 2011-10-13 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Verfahren und Anordnung zur Manipulation von in einem magnetischen Medium gespeicherten Domäneninformationen |
JP5746595B2 (ja) * | 2011-09-30 | 2015-07-08 | 株式会社東芝 | 磁気メモリ及びその製造方法 |
US20140003118A1 (en) | 2012-07-02 | 2014-01-02 | International Business Machines Corporation | Magnetic tunnel junction self-alignment in magnetic domain wall shift register memory devices |
US8787062B2 (en) | 2012-07-02 | 2014-07-22 | International Business Machines Corporation | Pinning magnetic domain walls in a magnetic domain shift register memory device |
US8767432B1 (en) | 2012-12-11 | 2014-07-01 | International Business Machines Corporation | Method and apparatus for controlled application of Oersted field to magnetic memory structure |
US9048410B2 (en) * | 2013-05-31 | 2015-06-02 | Micron Technology, Inc. | Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls |
US10157656B2 (en) * | 2015-08-25 | 2018-12-18 | Western Digital Technologies, Inc. | Implementing enhanced magnetic memory cell |
CN105633275B (zh) * | 2015-09-22 | 2018-07-06 | 上海磁宇信息科技有限公司 | 一种垂直型stt-mram记忆单元及其读写方法 |
WO2023012896A1 (ja) * | 2021-08-03 | 2023-02-09 | Tdk株式会社 | 磁壁移動素子および磁気アレイ |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1599513A (zh) | 1968-12-30 | 1970-07-15 | ||
US3868659A (en) | 1973-04-10 | 1975-02-25 | Us Navy | Serial access memory using thin magnetic films |
US3846770A (en) | 1973-07-11 | 1974-11-05 | Us Navy | Serial access memory using magnetic domains in thin film strips |
FR2263577B1 (zh) | 1974-03-08 | 1978-07-07 | Tecsi Tech Systemes Inf | |
US4080591A (en) | 1977-01-03 | 1978-03-21 | Sperry Rand Corporation | Replicator for cross-tie wall memory system incorporating isotropic data track |
US4075613A (en) | 1977-01-03 | 1978-02-21 | Sperry Rand Corporation | Logic gate for cross-tie wall memory system incorporating isotropic data tracks |
US4075612A (en) | 1977-01-03 | 1978-02-21 | Sperry Rand Corporation | Rounded serrated edge film strip geometry for cross-tie wall memory system |
US4192012A (en) | 1978-11-08 | 1980-03-04 | The United States Of America As Represented By The Secretary Of The Navy | Crosstie memory bit stretcher detector |
US4199819A (en) | 1978-11-08 | 1980-04-22 | The United States Of America As Represented By The Secretary Of The Navy | Field determined cross-tie memory propagation circuit |
US4250565A (en) | 1979-02-23 | 1981-02-10 | Sperry Corporation | Symmetrical memory plane for cross-tie wall memory system |
US4253160A (en) | 1979-09-06 | 1981-02-24 | Sperry Corporation | Nondestructive readout, random access cross-tie wall memory system |
US4253161A (en) | 1979-10-15 | 1981-02-24 | Sperry Corporation | Generator/shift register/detector for cross-tie wall memory system |
US4410963A (en) | 1981-10-05 | 1983-10-18 | Sperry Corporation | Cross-tie propagation using offset serration and cross-tie rocking action |
JP2812113B2 (ja) * | 1992-10-30 | 1998-10-22 | 日本ビクター株式会社 | 記録媒体とその記録再生方法 |
US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5729410A (en) | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
US5801984A (en) | 1996-11-27 | 1998-09-01 | International Business Machines Corporation | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment |
WO1999050833A1 (fr) * | 1998-03-30 | 1999-10-07 | Japan Science And Technology Corporation | Procede et appareil d'enregistrement magnetique |
JP2000195250A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 磁気メモリ装置 |
EP1115164B1 (en) * | 2000-01-07 | 2005-05-25 | Sharp Kabushiki Kaisha | Magnetoresistive device and magnetic memory using the same |
JP4667594B2 (ja) * | 2000-12-25 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6515895B2 (en) | 2001-01-31 | 2003-02-04 | Motorola, Inc. | Non-volatile magnetic register |
US6754017B2 (en) | 2001-10-26 | 2004-06-22 | Hitachi Global Storage Technologies, Netherlands B.V. | Patterned media magnetic recording disk drive with timing of write pulses by sensing the patterned media |
US6877213B2 (en) | 2002-01-07 | 2005-04-12 | International Business Machines Corporation | Feature size reduction in thin film magnetic head using low temperature deposition coating of photolithographically-defined trenches |
US6834005B1 (en) * | 2003-06-10 | 2004-12-21 | International Business Machines Corporation | Shiftable magnetic shift register and method of using the same |
US6898132B2 (en) * | 2003-06-10 | 2005-05-24 | International Business Machines Corporation | System and method for writing to a magnetic shift register |
US6920062B2 (en) * | 2003-10-14 | 2005-07-19 | International Business Machines Corporation | System and method for reading data stored on a magnetic shift register |
US6970379B2 (en) * | 2003-10-14 | 2005-11-29 | International Business Machines Corporation | System and method for storing data in an unpatterned, continuous magnetic layer |
-
2003
- 2003-10-14 US US10/685,835 patent/US6970379B2/en not_active Expired - Lifetime
-
2004
- 2004-09-24 SG SG200406873A patent/SG111304A1/en unknown
- 2004-10-07 TW TW093130323A patent/TWI309415B/zh active
- 2004-10-12 CN CN2004100839179A patent/CN1612262B/zh active Active
- 2004-10-12 JP JP2004297247A patent/JP4516817B2/ja active Active
-
2005
- 2005-10-03 US US11/243,360 patent/US7315470B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2005123617A (ja) | 2005-05-12 |
CN1612262A (zh) | 2005-05-04 |
US20060028866A1 (en) | 2006-02-09 |
TW200523925A (en) | 2005-07-16 |
US20050078511A1 (en) | 2005-04-14 |
TWI309415B (en) | 2009-05-01 |
CN1612262B (zh) | 2011-05-18 |
US6970379B2 (en) | 2005-11-29 |
JP4516817B2 (ja) | 2010-08-04 |
US7315470B2 (en) | 2008-01-01 |
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