SG10202101800TA - Substrate support and plasma processing apparatus - Google Patents

Substrate support and plasma processing apparatus

Info

Publication number
SG10202101800TA
SG10202101800TA SG10202101800TA SG10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA SG 10202101800T A SG10202101800T A SG 10202101800TA
Authority
SG
Singapore
Prior art keywords
processing apparatus
plasma processing
substrate support
substrate
plasma
Prior art date
Application number
Other languages
English (en)
Inventor
Tamura Hajime
Sasaki Yasuharu
Yamaguchi Shin
Sugawara Tsuguto
Koizumi Katsuyuki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=77808922&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG10202101800T(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10202101800TA publication Critical patent/SG10202101800TA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007Holding mechanisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
SG10202101800T 2020-03-25 2021-02-23 Substrate support and plasma processing apparatus SG10202101800TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020054019A JP7450427B2 (ja) 2020-03-25 2020-03-25 基板支持器及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
SG10202101800TA true SG10202101800TA (en) 2021-10-28

Family

ID=77808922

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202101800T SG10202101800TA (en) 2020-03-25 2021-02-23 Substrate support and plasma processing apparatus

Country Status (6)

Country Link
US (4) US11935729B2 (enrdf_load_stackoverflow)
JP (4) JP7450427B2 (enrdf_load_stackoverflow)
KR (3) KR20210119879A (enrdf_load_stackoverflow)
CN (1) CN113451095A (enrdf_load_stackoverflow)
SG (1) SG10202101800TA (enrdf_load_stackoverflow)
TW (1) TWI857215B (enrdf_load_stackoverflow)

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JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
JP7450427B2 (ja) * 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
KR20250041191A (ko) * 2021-01-29 2025-03-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
US12400845B2 (en) 2021-11-29 2025-08-26 Applied Materials, Inc. Ion energy control on electrodes in a plasma reactor
JP2023087396A (ja) * 2021-12-13 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置及び電位制御方法
JP2023146282A (ja) * 2022-03-29 2023-10-12 住友大阪セメント株式会社 静電チャック装置
JPWO2023223736A1 (enrdf_load_stackoverflow) * 2022-05-19 2023-11-23
JPWO2024038774A1 (enrdf_load_stackoverflow) * 2022-08-16 2024-02-22
WO2024171714A1 (ja) * 2023-02-14 2024-08-22 東京エレクトロン株式会社 プラズマ処理装置
JP2025004870A (ja) 2023-06-27 2025-01-16 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
WO2025004843A1 (ja) * 2023-06-27 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置及び電位制御方法
US20250201538A1 (en) * 2023-12-18 2025-06-19 Applied Materials, Inc. Esc design with enhanced tunability for wafer far edge plasma profile control
WO2025169740A1 (ja) * 2024-02-05 2025-08-14 東京エレクトロン株式会社 プラズマ処理装置、電源システム、制御方法、及びプログラム

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JP2000183038A (ja) 1998-12-14 2000-06-30 Hitachi Ltd プラズマ処理装置
JP4436575B2 (ja) 2001-01-31 2010-03-24 京セラ株式会社 ウエハ支持部材及びその製造方法
JP2003124298A (ja) * 2001-10-17 2003-04-25 Anelva Corp プラズマ支援ウェハー処理反応容器の二重静電チャックウェハーステージ
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JP7411463B2 (ja) 2020-03-17 2024-01-11 東京エレクトロン株式会社 検査方法及び検査装置
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JP7450427B2 (ja) * 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
JP7458287B2 (ja) 2020-10-06 2024-03-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7638930B2 (ja) 2021-05-31 2025-03-04 東京エレクトロン株式会社 プラズマ処理装置
KR20230023571A (ko) 2021-08-10 2023-02-17 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치 및 플라스마 처리 방법

Also Published As

Publication number Publication date
KR20210119879A (ko) 2021-10-06
JP2024012608A (ja) 2024-01-30
JP2021158134A (ja) 2021-10-07
TWI857215B (zh) 2024-10-01
US20210305025A1 (en) 2021-09-30
US20240194457A1 (en) 2024-06-13
US20250132136A1 (en) 2025-04-24
US11935729B2 (en) 2024-03-19
US20240194458A1 (en) 2024-06-13
JP2024160333A (ja) 2024-11-13
JP7519525B2 (ja) 2024-07-19
JP7538935B2 (ja) 2024-08-22
TW202449977A (zh) 2024-12-16
US12293903B2 (en) 2025-05-06
KR20250127005A (ko) 2025-08-26
CN113451095A (zh) 2021-09-28
KR102719832B1 (ko) 2024-10-22
TW202205513A (zh) 2022-02-01
KR20240113731A (ko) 2024-07-23
JP2024012609A (ja) 2024-01-30
JP7450427B2 (ja) 2024-03-15

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