SG10202009604WA - Collimator for use in substrate processing chambers - Google Patents

Collimator for use in substrate processing chambers

Info

Publication number
SG10202009604WA
SG10202009604WA SG10202009604WA SG10202009604WA SG10202009604WA SG 10202009604W A SG10202009604W A SG 10202009604WA SG 10202009604W A SG10202009604W A SG 10202009604WA SG 10202009604W A SG10202009604W A SG 10202009604WA SG 10202009604W A SG10202009604W A SG 10202009604WA
Authority
SG
Singapore
Prior art keywords
collimator
substrate processing
processing chambers
chambers
substrate
Prior art date
Application number
SG10202009604WA
Other languages
English (en)
Inventor
Martin Lee Riker
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10202009604WA publication Critical patent/SG10202009604WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG10202009604WA 2014-11-26 2015-11-20 Collimator for use in substrate processing chambers SG10202009604WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462085009P 2014-11-26 2014-11-26
US14/607,273 US9543126B2 (en) 2014-11-26 2015-01-28 Collimator for use in substrate processing chambers

Publications (1)

Publication Number Publication Date
SG10202009604WA true SG10202009604WA (en) 2020-11-27

Family

ID=56009603

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10202009604WA SG10202009604WA (en) 2014-11-26 2015-11-20 Collimator for use in substrate processing chambers
SG11201703543RA SG11201703543RA (en) 2014-11-26 2015-11-20 Collimator for use in substrate processing chambers

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201703543RA SG11201703543RA (en) 2014-11-26 2015-11-20 Collimator for use in substrate processing chambers

Country Status (9)

Country Link
US (1) US9543126B2 (enrdf_load_stackoverflow)
EP (2) EP3723113A1 (enrdf_load_stackoverflow)
JP (1) JP6959863B2 (enrdf_load_stackoverflow)
KR (1) KR101824517B1 (enrdf_load_stackoverflow)
CN (2) CN107002220B (enrdf_load_stackoverflow)
IL (1) IL251944B (enrdf_load_stackoverflow)
SG (2) SG10202009604WA (enrdf_load_stackoverflow)
TW (1) TWI618172B (enrdf_load_stackoverflow)
WO (1) WO2016085805A1 (enrdf_load_stackoverflow)

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KR20240127488A (ko) * 2015-10-27 2024-08-22 어플라이드 머티어리얼스, 인코포레이티드 Pvd 스퍼터 챔버를 위한 바이어스가능 플럭스 최적화기/콜리메이터
CN108780742B (zh) 2016-03-05 2023-07-18 应用材料公司 用于在物理气相沉积工艺中控制离子分数的方法和设备
TWI745486B (zh) * 2016-11-18 2021-11-11 美商應用材料股份有限公司 用於在物理氣相沉積腔室中的準直器
JP2018154880A (ja) * 2017-03-17 2018-10-04 株式会社東芝 コリメータおよび処理装置
CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
USD859333S1 (en) 2018-03-16 2019-09-10 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD858468S1 (en) 2018-03-16 2019-09-03 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
US11017989B2 (en) 2018-03-16 2021-05-25 Samsung Electronics Co., Ltd. Collimator, fabrication apparatus including the same, and method of fabricating a semiconductor device using the same
WO2020088415A1 (zh) * 2018-10-31 2020-05-07 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
CN109457231B (zh) * 2018-11-26 2020-04-03 武汉华星光电半导体显示技术有限公司 蒸镀载板及利用该蒸镀载板对基板进行蒸镀的方法
CN111826607A (zh) * 2019-04-18 2020-10-27 天通（嘉兴）新材料有限公司 一种激光管帽镀膜遮挡治具
CN110643958A (zh) * 2019-10-21 2020-01-03 吴浪生 一种利用溅镀实现晶圆的物理镀膜设备
USD937329S1 (en) 2020-03-23 2021-11-30 Applied Materials, Inc. Sputter target for a physical vapor deposition chamber
USD998575S1 (en) 2020-04-07 2023-09-12 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
US11635338B2 (en) * 2020-10-23 2023-04-25 Applied Materials, Inc. Rapid chamber vacuum leak check hardware and maintenance routine
USD1009816S1 (en) 2021-08-29 2024-01-02 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
USD997111S1 (en) 2021-12-15 2023-08-29 Applied Materials, Inc. Collimator for use in a physical vapor deposition (PVD) chamber
USD1038901S1 (en) * 2022-01-12 2024-08-13 Applied Materials, Inc. Collimator for a physical vapor deposition chamber
FI20225334A1 (en) * 2022-04-21 2023-10-22 Biomensio Ltd Collimator to produce piezoelectric layers having tilted c-axis orientation
USD1026054S1 (en) * 2022-04-22 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025935S1 (en) * 2022-11-03 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1024149S1 (en) * 2022-12-16 2024-04-23 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1026839S1 (en) * 2022-12-16 2024-05-14 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber
USD1025936S1 (en) * 2022-12-16 2024-05-07 Applied Materials, Inc. Collimator for a physical vapor deposition (PVD) chamber

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US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
JPH06295903A (ja) * 1993-02-09 1994-10-21 Matsushita Electron Corp スパッタリング装置
KR970009828B1 (en) * 1994-02-23 1997-06-18 Sansung Electronics Co Ltd Fabrication method of collimator
JPH08260139A (ja) * 1995-03-23 1996-10-08 Sony Corp 成膜用コリメータ、成膜装置及び電子装置の製造方法
US5650052A (en) * 1995-10-04 1997-07-22 Edelstein; Sergio Variable cell size collimator
US6362097B1 (en) 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
AU2003272739A1 (en) * 2003-09-29 2005-05-11 Seagate Technology Llc System, method and collimator for oblique deposition
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法
EP1710324B1 (en) 2005-04-08 2008-12-03 STMicroelectronics S.r.l. PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device
US9316413B2 (en) 2008-06-11 2016-04-19 Honeywell International Inc. Selectable efficiency versus comfort for modulating furnace
US20090308739A1 (en) 2008-06-17 2009-12-17 Applied Materials, Inc. Wafer processing deposition shielding components
WO2009155208A2 (en) * 2008-06-17 2009-12-23 Applied Materials, Inc. Apparatus and method for uniform deposition
WO2010123680A2 (en) * 2009-04-24 2010-10-28 Applied Materials, Inc. Wafer processing deposition shielding components
CN103343317A (zh) * 2013-07-11 2013-10-09 南京大学 基于纳米团簇束流沉积系统制备TiO2纳米颗粒减反膜的方法

Also Published As

Publication number Publication date
CN109338293B (zh) 2021-06-04
EP3140851B1 (en) 2020-05-06
IL251944B (en) 2021-06-30
EP3140851A1 (en) 2017-03-15
JP6959863B2 (ja) 2021-11-05
US20160145735A1 (en) 2016-05-26
EP3140851A4 (en) 2017-11-01
KR20160138306A (ko) 2016-12-02
TWI618172B (zh) 2018-03-11
WO2016085805A1 (en) 2016-06-02
IL251944A0 (en) 2017-06-29
JP2017537227A (ja) 2017-12-14
US9543126B2 (en) 2017-01-10
SG11201703543RA (en) 2017-06-29
TW201622045A (zh) 2016-06-16
EP3723113A1 (en) 2020-10-14
CN109338293A (zh) 2019-02-15
KR101824517B1 (ko) 2018-02-01
CN107002220B (zh) 2020-04-17
CN107002220A (zh) 2017-08-01

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