SG10202003704XA - Semiconductor Devices - Google Patents

Semiconductor Devices

Info

Publication number
SG10202003704XA
SG10202003704XA SG10202003704XA SG10202003704XA SG10202003704XA SG 10202003704X A SG10202003704X A SG 10202003704XA SG 10202003704X A SG10202003704X A SG 10202003704XA SG 10202003704X A SG10202003704X A SG 10202003704XA SG 10202003704X A SG10202003704X A SG 10202003704XA
Authority
SG
Singapore
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Application number
SG10202003704XA
Other languages
English (en)
Inventor
Park Joowon
Lee Woongseop
Jung Eiwhan
Cheon Jisung
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10202003704XA publication Critical patent/SG10202003704XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG10202003704XA 2019-08-20 2020-04-23 Semiconductor Devices SG10202003704XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190101591A KR102729073B1 (ko) 2019-08-20 2019-08-20 반도체 장치

Publications (1)

Publication Number Publication Date
SG10202003704XA true SG10202003704XA (en) 2021-03-30

Family

ID=74495874

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202003704XA SG10202003704XA (en) 2019-08-20 2020-04-23 Semiconductor Devices

Country Status (6)

Country Link
US (2) US11398495B2 (enExample)
JP (1) JP7631652B2 (enExample)
KR (1) KR102729073B1 (enExample)
CN (1) CN112420713B (enExample)
DE (1) DE102020108092A1 (enExample)
SG (1) SG10202003704XA (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102790612B1 (ko) * 2020-06-23 2025-04-08 삼성전자주식회사 반도체 장치
KR20220162471A (ko) 2021-06-01 2022-12-08 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
US12094814B2 (en) * 2021-06-17 2024-09-17 Macronix International Co., Ltd. Memory device and flash memory device with improved support for staircase regions
KR20230008958A (ko) * 2021-07-07 2023-01-17 삼성전자주식회사 3차원 반도체 메모리 장치 및 이를 포함하는 전자 시스템
KR20230028975A (ko) * 2021-08-23 2023-03-03 삼성전자주식회사 3차원 반도체 메모리 장치 및 이를 포함하는 전자 시스템
KR20230038368A (ko) 2021-09-10 2023-03-20 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템
JP2023044480A (ja) 2021-09-17 2023-03-30 キオクシア株式会社 半導体装置およびその製造方法
JP7755474B2 (ja) * 2021-12-10 2025-10-16 キオクシア株式会社 半導体装置およびその製造方法
KR20240030107A (ko) * 2022-08-29 2024-03-07 삼성전자주식회사 반도체 장치 및 이를 포함하는 전자 시스템

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101303574B1 (ko) 2011-06-10 2013-09-09 정영교 데이터 구조로부터 표를 생성하는 방법 및 하나 이상의 셀에서 표를 생성하는 방법
US20150371925A1 (en) 2014-06-20 2015-12-24 Intel Corporation Through array routing for non-volatile memory
KR102378820B1 (ko) 2015-08-07 2022-03-28 삼성전자주식회사 메모리 장치
US9818759B2 (en) * 2015-12-22 2017-11-14 Sandisk Technologies Llc Through-memory-level via structures for a three-dimensional memory device
US10269620B2 (en) 2016-02-16 2019-04-23 Sandisk Technologies Llc Multi-tier memory device with through-stack peripheral contact via structures and method of making thereof
US10256248B2 (en) 2016-06-07 2019-04-09 Sandisk Technologies Llc Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereof
US10249640B2 (en) 2016-06-08 2019-04-02 Sandisk Technologies Llc Within-array through-memory-level via structures and method of making thereof
KR20180001296A (ko) 2016-06-27 2018-01-04 삼성전자주식회사 수직형 구조를 가지는 메모리 장치
US10276585B2 (en) 2016-08-12 2019-04-30 Toshiba Memory Corporation Semiconductor memory device
KR102634947B1 (ko) * 2016-08-18 2024-02-07 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
KR102609348B1 (ko) 2016-10-26 2023-12-06 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102561732B1 (ko) * 2017-03-08 2023-07-31 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3차원 메모리 장치의 쓰루 어레이 컨택 구조
JP2018157103A (ja) 2017-03-17 2018-10-04 東芝メモリ株式会社 記憶措置
KR102344862B1 (ko) 2017-05-17 2021-12-29 삼성전자주식회사 수직형 반도체 소자
KR102385566B1 (ko) * 2017-08-30 2022-04-12 삼성전자주식회사 수직형 메모리 장치
JP6980518B2 (ja) * 2017-12-27 2021-12-15 キオクシア株式会社 半導体記憶装置
CN109496356B (zh) 2018-10-11 2021-06-22 长江存储科技有限责任公司 垂直存储器件
KR102824041B1 (ko) * 2020-02-19 2025-06-23 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
US11398495B2 (en) 2022-07-26
KR102729073B1 (ko) 2024-11-14
CN112420713A (zh) 2021-02-26
KR20210022797A (ko) 2021-03-04
US20220328522A1 (en) 2022-10-13
DE102020108092A1 (de) 2021-02-25
US12507410B2 (en) 2025-12-23
JP2021034720A (ja) 2021-03-01
JP7631652B2 (ja) 2025-02-19
CN112420713B (zh) 2025-04-29
US20210057444A1 (en) 2021-02-25

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