SG10201904750PA - Method of evaluating photomask blank-associated substrate - Google Patents

Method of evaluating photomask blank-associated substrate

Info

Publication number
SG10201904750PA
SG10201904750PA SG10201904750PA SG10201904750PA SG10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA
Authority
SG
Singapore
Prior art keywords
evaluating
photomask blank
associated substrate
substrate
photomask
Prior art date
Application number
SG10201904750PA
Other languages
English (en)
Inventor
Kishita Takahiro
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201904750PA publication Critical patent/SG10201904750PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10201904750PA 2018-06-19 2019-05-27 Method of evaluating photomask blank-associated substrate SG10201904750PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018116305A JP7017475B2 (ja) 2018-06-19 2018-06-19 フォトマスクブランク関連基板の表面状態の評価方法

Publications (1)

Publication Number Publication Date
SG10201904750PA true SG10201904750PA (en) 2020-01-30

Family

ID=68839812

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201904750PA SG10201904750PA (en) 2018-06-19 2019-05-27 Method of evaluating photomask blank-associated substrate

Country Status (6)

Country Link
US (1) US11137678B2 (ko)
JP (1) JP7017475B2 (ko)
KR (1) KR102464254B1 (ko)
CN (1) CN110618582A (ko)
SG (1) SG10201904750PA (ko)
TW (1) TWI793338B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7166323B2 (ja) * 2020-12-21 2022-11-07 Ｊｘ金属株式会社 リン化インジウム基板、リン化インジウム基板の製造方法及び半導体エピタキシャルウエハ
JP7166324B2 (ja) * 2020-12-21 2022-11-07 Ｊｘ金属株式会社 リン化インジウム基板、リン化インジウム基板の製造方法及び半導体エピタキシャルウエハ

Family Cites Families (26)

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JP2000122265A (ja) * 1998-10-13 2000-04-28 Toppan Printing Co Ltd フォトマスク外観検査装置
JP4088742B2 (ja) 2000-12-26 2008-05-21 信越化学工業株式会社 フォトマスクブランクス、フォトマスク及びフォトマスクブランクスの製造方法
TW544549B (en) * 2000-12-26 2003-08-01 Hoya Corp Half-tone type phase shift mask blank, process for prodncing half-tone type phase shift mask, pattern transfer method, laminate and method of forming pattern
JP4715016B2 (ja) * 2001-02-15 2011-07-06 ソニー株式会社 ポリシリコン膜の評価方法
DE10126185B4 (de) * 2001-05-30 2007-07-19 Robert Bosch Gmbh Prüfkörper für optoelektronische Bildanalysesysteme
JP2003084426A (ja) 2001-09-11 2003-03-19 Sony Corp マスク検査装置およびマスク検査方法
JP2003270773A (ja) 2002-03-14 2003-09-25 Fujitsu Ltd マスクパターン検査装置およびマスクパターン検査方法
JP2004012365A (ja) * 2002-06-10 2004-01-15 Nikon Corp 基板検査システムおよび基板検査方法
JP2007255959A (ja) 2006-03-22 2007-10-04 Lasertec Corp 検査装置及び検査方法とその検査装置及び検査方法を用いたパターン基板の製造方法
JP5064116B2 (ja) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
JP2009092954A (ja) * 2007-10-09 2009-04-30 Toshiba Corp パターン評価方法
JP5615489B2 (ja) 2008-08-08 2014-10-29 株式会社荏原製作所 基板表面の検査方法及び検査装置
JP5185158B2 (ja) * 2009-02-26 2013-04-17 Ｈｏｙａ株式会社 多階調フォトマスクの評価方法
JP2010272553A (ja) * 2009-05-19 2010-12-02 Renesas Electronics Corp マスクブランクの欠陥検査装置および欠陥検査方法、ならびに半導体装置の製造方法
JP2011199785A (ja) 2010-03-23 2011-10-06 Olympus Corp 撮像装置及び方法
WO2012005019A1 (ja) * 2010-07-08 2012-01-12 旭硝子株式会社 ガラス基板端面の評価方法及びガラス基板端面の加工方法並びにガラス基板
JP2012058558A (ja) 2010-09-10 2012-03-22 Renesas Electronics Corp マスクブランクの検査方法およびマスクの製造方法
JP2014109436A (ja) * 2012-11-30 2014-06-12 Tokyo Electron Ltd 基板の欠陥検査方法、基板の欠陥検査装置、プログラム及びコンピュータ記憶媒体
JP6428555B2 (ja) * 2014-10-24 2018-11-28 信越化学工業株式会社 フォトマスクブランクの欠陥寸法の評価方法、選別方法及び製造方法
JP6424143B2 (ja) 2015-04-17 2018-11-14 株式会社ニューフレアテクノロジー 検査方法およびテンプレート
JP6473047B2 (ja) 2015-05-26 2019-02-20 株式会社Ｓｃｒｅｅｎホールディングス 検査装置および基板処理装置
JP2017015692A (ja) * 2015-06-26 2017-01-19 信越化学工業株式会社 フォトマスクブランクの欠陥検査方法、選別方法及び製造方法
EP3109700B1 (en) * 2015-06-26 2020-07-01 Shin-Etsu Chemical Co., Ltd. Defect inspecting method, sorting method, and producing method for photomask blank
JP6394544B2 (ja) * 2015-09-04 2018-09-26 信越化学工業株式会社 フォトマスクブランクの欠陥検査方法、選別方法及び製造方法
US10295477B2 (en) * 2017-01-26 2019-05-21 Shin-Etsu Chemical Co., Ltd. Methods for defect inspection, sorting, and manufacturing photomask blank
DE102018202639B4 (de) 2018-02-21 2019-11-21 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung eines strukturunabhängigen Beitrags einer Lithographie-Maske zu einer Schwankung der Linienbreite

Also Published As

Publication number Publication date
KR102464254B1 (ko) 2022-11-04
US11137678B2 (en) 2021-10-05
CN110618582A (zh) 2019-12-27
TW202013070A (zh) 2020-04-01
JP7017475B2 (ja) 2022-02-08
JP2019219495A (ja) 2019-12-26
TWI793338B (zh) 2023-02-21
KR20190143355A (ko) 2019-12-30
US20190384166A1 (en) 2019-12-19

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