SG10201904750PA - Method of evaluating photomask blank-associated substrate - Google Patents

Method of evaluating photomask blank-associated substrate

Info

Publication number
SG10201904750PA
SG10201904750PA SG10201904750PA SG10201904750PA SG10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA SG 10201904750P A SG10201904750P A SG 10201904750PA
Authority
SG
Singapore
Prior art keywords
evaluating
photomask blank
associated substrate
substrate
photomask
Prior art date
Application number
SG10201904750PA
Inventor
Kishita Takahiro
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201904750PA publication Critical patent/SG10201904750PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10201904750PA 2018-06-19 2019-05-27 Method of evaluating photomask blank-associated substrate SG10201904750PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018116305A JP7017475B2 (en) 2018-06-19 2018-06-19 Photomask blank-related evaluation method of surface condition of substrate

Publications (1)

Publication Number Publication Date
SG10201904750PA true SG10201904750PA (en) 2020-01-30

Family

ID=68839812

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201904750PA SG10201904750PA (en) 2018-06-19 2019-05-27 Method of evaluating photomask blank-associated substrate

Country Status (6)

Country Link
US (1) US11137678B2 (en)
JP (1) JP7017475B2 (en)
KR (1) KR102464254B1 (en)
CN (1) CN110618582A (en)
SG (1) SG10201904750PA (en)
TW (1) TWI793338B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7166324B2 (en) * 2020-12-21 2022-11-07 Ｊｘ金属株式会社 Indium phosphide substrate, method for producing indium phosphide substrate, and semiconductor epitaxial wafer
JP7166323B2 (en) * 2020-12-21 2022-11-07 Ｊｘ金属株式会社 Indium phosphide substrate, method for producing indium phosphide substrate, and semiconductor epitaxial wafer

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JP2000122265A (en) * 1998-10-13 2000-04-28 Toppan Printing Co Ltd Photomask appearance inspection device
TW544549B (en) * 2000-12-26 2003-08-01 Hoya Corp Half-tone type phase shift mask blank, process for prodncing half-tone type phase shift mask, pattern transfer method, laminate and method of forming pattern
JP4088742B2 (en) 2000-12-26 2008-05-21 信越化学工業株式会社 Photomask blank, photomask, and method for manufacturing photomask blank
JP4715016B2 (en) * 2001-02-15 2011-07-06 ソニー株式会社 Method for evaluating polysilicon film
DE10126185B4 (en) * 2001-05-30 2007-07-19 Robert Bosch Gmbh Test specimen for optoelectronic image analysis systems
JP2003084426A (en) 2001-09-11 2003-03-19 Sony Corp Mask inspecting device and mask inspecting method
JP2003270773A (en) 2002-03-14 2003-09-25 Fujitsu Ltd Method and device for inspecting mask pattern
JP2004012365A (en) * 2002-06-10 2004-01-15 Nikon Corp Substrate inspection system and substrate inspection method
JP2007255959A (en) 2006-03-22 2007-10-04 Lasertec Corp Inspection apparatus, inspection method, and manufacturing method of pattern substrate using the inspection apparatus and the inspection method
JP5064116B2 (en) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 Photomask inspection method, photomask manufacturing method, and electronic component manufacturing method
JP2009092954A (en) * 2007-10-09 2009-04-30 Toshiba Corp Pattern evaluation method
JP5615489B2 (en) 2008-08-08 2014-10-29 株式会社荏原製作所 Inspection method and inspection apparatus for substrate surface
JP5185158B2 (en) * 2009-02-26 2013-04-17 Ｈｏｙａ株式会社 Multi-tone photomask evaluation method
JP2010272553A (en) * 2009-05-19 2010-12-02 Renesas Electronics Corp Defect inspection device and defect inspection method for mask blank, and method of manufacturing semiconductor device
JP2011199785A (en) 2010-03-23 2011-10-06 Olympus Corp Imaging apparatus and method
CN102985386B (en) * 2010-07-08 2015-09-02 旭硝子株式会社 The evaluation method of glass substrate end face and the working method of glass substrate end face and glass substrate
JP2012058558A (en) 2010-09-10 2012-03-22 Renesas Electronics Corp Mask blank inspection method and manufacturing method of mask
JP2014109436A (en) * 2012-11-30 2014-06-12 Tokyo Electron Ltd Substrate defect inspection method, substrate defect inspection device, program, and computer storage medium
JP6428555B2 (en) * 2014-10-24 2018-11-28 信越化学工業株式会社 Method for evaluating defect size of photomask blank, selection method and manufacturing method
JP6424143B2 (en) 2015-04-17 2018-11-14 株式会社ニューフレアテクノロジー Inspection methods and templates
JP6473047B2 (en) 2015-05-26 2019-02-20 株式会社Ｓｃｒｅｅｎホールディングス Inspection apparatus and substrate processing apparatus
JP2017015692A (en) * 2015-06-26 2017-01-19 信越化学工業株式会社 Photomask blank defect inspection method, selection method and manufacturing method
EP3109700B1 (en) * 2015-06-26 2020-07-01 Shin-Etsu Chemical Co., Ltd. Defect inspecting method, sorting method, and producing method for photomask blank
JP6394544B2 (en) * 2015-09-04 2018-09-26 信越化学工業株式会社 Photomask blank defect inspection method, sorting method, and manufacturing method
US10295477B2 (en) * 2017-01-26 2019-05-21 Shin-Etsu Chemical Co., Ltd. Methods for defect inspection, sorting, and manufacturing photomask blank
DE102018202639B4 (en) 2018-02-21 2019-11-21 Carl Zeiss Smt Gmbh Method for determining a structure-independent contribution of a lithography mask to a fluctuation of the line width

Also Published As

Publication number Publication date
KR102464254B1 (en) 2022-11-04
TW202013070A (en) 2020-04-01
KR20190143355A (en) 2019-12-30
TWI793338B (en) 2023-02-21
CN110618582A (en) 2019-12-27
JP2019219495A (en) 2019-12-26
US11137678B2 (en) 2021-10-05
JP7017475B2 (en) 2022-02-08
US20190384166A1 (en) 2019-12-19

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