SG10201803743RA - Wafer processing method - Google Patents
Wafer processing methodInfo
- Publication number
- SG10201803743RA SG10201803743RA SG10201803743RA SG10201803743RA SG10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA
- Authority
- SG
- Singapore
- Prior art keywords
- wafer
- protective film
- front side
- processing method
- liquid
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017094917A JP6837717B2 (ja) | 2017-05-11 | 2017-05-11 | ウェーハの加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201803743RA true SG10201803743RA (en) | 2018-12-28 |
Family
ID=63962722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201803743RA SG10201803743RA (en) | 2017-05-11 | 2018-05-03 | Wafer processing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10332777B2 (zh) |
JP (1) | JP6837717B2 (zh) |
KR (1) | KR102445610B1 (zh) |
CN (1) | CN108878340B (zh) |
DE (1) | DE102018207252B4 (zh) |
SG (1) | SG10201803743RA (zh) |
TW (1) | TWI754737B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7071782B2 (ja) * | 2017-12-28 | 2022-05-19 | 株式会社ディスコ | ウェーハの加工方法 |
JP2022126401A (ja) | 2021-02-18 | 2022-08-30 | キオクシア株式会社 | 製造装置及びその動作方法、及び半導体装置の製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3556399B2 (ja) | 1996-07-29 | 2004-08-18 | 株式会社ディスコ | 半導体ウエーハの研磨方法 |
JP4397625B2 (ja) * | 2003-06-02 | 2010-01-13 | 株式会社ディスコ | チップの剥離方法 |
US7226812B2 (en) * | 2004-03-31 | 2007-06-05 | Intel Corporation | Wafer support and release in wafer processing |
JP2007266191A (ja) * | 2006-03-28 | 2007-10-11 | Nec Electronics Corp | ウェハ処理方法 |
JP5317267B2 (ja) * | 2008-11-14 | 2013-10-16 | 株式会社タカトリ | ウエハのマウント装置 |
KR101216783B1 (ko) * | 2010-06-02 | 2012-12-28 | 미쓰이 가가쿠 토세로 가부시키가이샤 | 반도체 웨이퍼 표면 보호용 시트, 및 그것을 이용한 반도체 웨이퍼의 보호 방법과 반도체 장치의 제조 방법 |
JP5348360B1 (ja) | 2011-12-13 | 2013-11-20 | 日立化成株式会社 | 半導体装置の製造方法 |
JP2013162096A (ja) * | 2012-02-08 | 2013-08-19 | Fujitsu Semiconductor Ltd | 半導体チップの製造方法及びラミネート装置 |
JP6061590B2 (ja) | 2012-09-27 | 2017-01-18 | 株式会社ディスコ | 表面保護部材および加工方法 |
JP2014165338A (ja) * | 2013-02-25 | 2014-09-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
JP2015230964A (ja) * | 2014-06-05 | 2015-12-21 | 株式会社ディスコ | ウエーハの加工方法 |
JP6559013B2 (ja) * | 2015-08-20 | 2019-08-14 | リンテック株式会社 | シート貼付装置および貼付方法 |
JP6657515B2 (ja) * | 2015-08-31 | 2020-03-04 | 株式会社ディスコ | ウェーハを処理する方法および該方法で使用するための保護シート |
DE102015216619B4 (de) * | 2015-08-31 | 2017-08-10 | Disco Corporation | Verfahren zum Bearbeiten eines Wafers |
JP2017079291A (ja) * | 2015-10-21 | 2017-04-27 | 株式会社ディスコ | ウエーハの加工方法 |
JP6906843B2 (ja) * | 2017-04-28 | 2021-07-21 | 株式会社ディスコ | ウェーハの加工方法 |
-
2017
- 2017-05-11 JP JP2017094917A patent/JP6837717B2/ja active Active
-
2018
- 2018-04-12 TW TW107112475A patent/TWI754737B/zh active
- 2018-05-03 SG SG10201803743RA patent/SG10201803743RA/en unknown
- 2018-05-08 CN CN201810430170.1A patent/CN108878340B/zh active Active
- 2018-05-09 KR KR1020180053234A patent/KR102445610B1/ko active IP Right Grant
- 2018-05-09 DE DE102018207252.3A patent/DE102018207252B4/de active Active
- 2018-05-11 US US15/977,359 patent/US10332777B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102018207252B4 (de) | 2023-08-24 |
TWI754737B (zh) | 2022-02-11 |
KR102445610B1 (ko) | 2022-09-20 |
CN108878340B (zh) | 2024-02-20 |
KR20180124758A (ko) | 2018-11-21 |
CN108878340A (zh) | 2018-11-23 |
JP6837717B2 (ja) | 2021-03-03 |
JP2018190938A (ja) | 2018-11-29 |
US10332777B2 (en) | 2019-06-25 |
US20180330978A1 (en) | 2018-11-15 |
DE102018207252A1 (de) | 2018-11-15 |
TW201903874A (zh) | 2019-01-16 |
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