SG10201803750SA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201803750SA
SG10201803750SA SG10201803750SA SG10201803750SA SG10201803750SA SG 10201803750S A SG10201803750S A SG 10201803750SA SG 10201803750S A SG10201803750S A SG 10201803750SA SG 10201803750S A SG10201803750S A SG 10201803750SA SG 10201803750S A SG10201803750S A SG 10201803750SA
Authority
SG
Singapore
Prior art keywords
wafer
annular groove
processing method
device area
front side
Prior art date
Application number
SG10201803750SA
Inventor
Sekiya Kazuma
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201803750SA publication Critical patent/SG10201803750SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Abstract

WAFER PROCESSING METHOD A wafer processing method for processing a wafer includes an annular groove forming step, a close contact making step, a protective member fixing step, a grinding step, and a peeling step. The wafer has a device area and a peripheral marginal area surrounding the device area on the front side, and devices each having asperities are formed in the device area. In the annular groove forming step, an annular groove is formed on the front side of the wafer along the inner circumference of the peripheral marginal area. In the close contact making step, the device area and the annular groove are covered with a protective film, and the protective film is bring into close contact with the front side of the wafer. (Figure 1B)
SG10201803750SA 2017-05-25 2018-05-03 Wafer processing method SG10201803750SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017103502A JP6914587B2 (en) 2017-05-25 2017-05-25 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10201803750SA true SG10201803750SA (en) 2018-12-28

Family

ID=64109627

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803750SA SG10201803750SA (en) 2017-05-25 2018-05-03 Wafer processing method

Country Status (7)

Country Link
US (1) US10854462B2 (en)
JP (1) JP6914587B2 (en)
KR (1) KR102450309B1 (en)
CN (1) CN108962738B (en)
DE (1) DE102018207497A1 (en)
SG (1) SG10201803750SA (en)
TW (1) TWI754754B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7214455B2 (en) 2018-12-07 2023-01-30 株式会社ディスコ Protective member forming device
JP7266953B2 (en) * 2019-08-07 2023-05-01 株式会社ディスコ Protective member forming method and protective member forming apparatus
JP7418184B2 (en) * 2019-11-14 2024-01-19 株式会社ディスコ How to install a protective member, how to process a workpiece, and how to manufacture a protective member
JP7430111B2 (en) 2020-05-08 2024-02-09 株式会社ディスコ Processing method
JP2022032667A (en) * 2020-08-13 2022-02-25 株式会社ディスコ Processing method of wafer

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH635769A5 (en) * 1980-03-10 1983-04-29 Far Fab Assortiments Reunies INSTALLATION FOR SAWING PLATES AND HANDLING DEVICE FOR SUCH AN INSTALLATION.
JPS5799736A (en) * 1980-12-12 1982-06-21 Toshiba Corp Fabrication of semiconductor substrate
JPS59174677A (en) * 1983-03-24 1984-10-03 Nitto Electric Ind Co Ltd Peeling of protective film
US4761335A (en) * 1985-03-07 1988-08-02 National Starch And Chemical Corporation Alpha-particle protection of semiconductor devices
JP3556399B2 (en) 1996-07-29 2004-08-18 株式会社ディスコ Polishing method for semiconductor wafer
JP4817805B2 (en) * 2004-11-25 2011-11-16 株式会社東京精密 Film peeling method and film peeling apparatus
DE102005011107A1 (en) * 2005-03-10 2006-09-21 Infineon Technologies Ag Method and device for processing wafers on mounting supports
TW200719394A (en) * 2005-11-04 2007-05-16 Tokyo Seimitsu Co Ltd Method and device for peeling off film
JP2009043992A (en) * 2007-08-09 2009-02-26 Disco Abrasive Syst Ltd Treatment method for wafer
JP6061590B2 (en) * 2012-09-27 2017-01-18 株式会社ディスコ Surface protection member and processing method
JP2014165338A (en) * 2013-02-25 2014-09-08 Disco Abrasive Syst Ltd Laser processing method
JP6385133B2 (en) * 2014-05-16 2018-09-05 株式会社ディスコ Wafer processing method and intermediate member
JP2016100346A (en) * 2014-11-18 2016-05-30 株式会社ディスコ Wafer processing method
JP6482425B2 (en) * 2015-07-21 2019-03-13 株式会社ディスコ Thinning method of wafer
JP6559013B2 (en) * 2015-08-20 2019-08-14 リンテック株式会社 Sheet sticking device and sticking method
WO2017036512A1 (en) * 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
DE102015216619B4 (en) * 2015-08-31 2017-08-10 Disco Corporation Method for processing a wafer
JP2017079291A (en) 2015-10-21 2017-04-27 株式会社ディスコ Wafer processing method
JP6619685B2 (en) * 2016-04-19 2019-12-11 株式会社ディスコ Processing method of SiC wafer

Also Published As

Publication number Publication date
US20180342398A1 (en) 2018-11-29
KR102450309B1 (en) 2022-09-30
CN108962738B (en) 2024-02-02
US10854462B2 (en) 2020-12-01
CN108962738A (en) 2018-12-07
TWI754754B (en) 2022-02-11
JP2018200913A (en) 2018-12-20
DE102018207497A1 (en) 2018-11-29
KR20180129643A (en) 2018-12-05
TW201901789A (en) 2019-01-01
JP6914587B2 (en) 2021-08-04

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