SG10201803743RA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201803743RA
SG10201803743RA SG10201803743RA SG10201803743RA SG10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA SG 10201803743R A SG10201803743R A SG 10201803743RA
Authority
SG
Singapore
Prior art keywords
wafer
protective film
front side
processing method
liquid
Prior art date
Application number
SG10201803743RA
Inventor
Sekiya Kazuma
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201803743RA publication Critical patent/SG10201803743RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02016Backside treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386Separation by peeling

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

WAFER PROCESSING METHOD A wafer processing method includes a liquid supplying step of supplying a liquid to the front side of a wafer, a close contact making step of pressing a protective film against the front side of the wafer with the liquid interposed therebetween, thereby bringing the protective film into close contact with the front side of the wafer, a protective member fixing step of covering the protective film with a protective member formed from a liquid resin curable by external stimulus, thereby fixing the protective member through the protective film to the front side of the wafer, a grinding step of grinding the back side of the wafer to reduce the thickness of the wafer, and a peeling step of peeling the protective film and the protective member from the wafer thinned by the grinding step. (Figure 1)
SG10201803743RA 2017-05-11 2018-05-03 Wafer processing method SG10201803743RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017094917A JP6837717B2 (en) 2017-05-11 2017-05-11 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10201803743RA true SG10201803743RA (en) 2018-12-28

Family

ID=63962722

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803743RA SG10201803743RA (en) 2017-05-11 2018-05-03 Wafer processing method

Country Status (7)

Country Link
US (1) US10332777B2 (en)
JP (1) JP6837717B2 (en)
KR (1) KR102445610B1 (en)
CN (1) CN108878340B (en)
DE (1) DE102018207252B4 (en)
SG (1) SG10201803743RA (en)
TW (1) TWI754737B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071782B2 (en) * 2017-12-28 2022-05-19 株式会社ディスコ Wafer processing method
JP2022126401A (en) 2021-02-18 2022-08-30 キオクシア株式会社 Manufacturing apparatus and its operation method, and method for manufacturing semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556399B2 (en) 1996-07-29 2004-08-18 株式会社ディスコ Polishing method for semiconductor wafer
JP4397625B2 (en) * 2003-06-02 2010-01-13 株式会社ディスコ Chip peeling method
US7226812B2 (en) * 2004-03-31 2007-06-05 Intel Corporation Wafer support and release in wafer processing
JP2007266191A (en) * 2006-03-28 2007-10-11 Nec Electronics Corp Wafer processing method
JP5317267B2 (en) * 2008-11-14 2013-10-16 株式会社タカトリ Wafer mounting device
MY165350A (en) * 2010-06-02 2018-03-21 Mitsui Chemicals Tohcello Inc Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet
TW201338058A (en) * 2011-12-13 2013-09-16 Hitachi Chemical Co Ltd Fabricating method of semiconductor device
JP2013162096A (en) * 2012-02-08 2013-08-19 Fujitsu Semiconductor Ltd Semiconductor chip manufacturing method and laminate device
JP6061590B2 (en) * 2012-09-27 2017-01-18 株式会社ディスコ Surface protection member and processing method
JP2014165338A (en) * 2013-02-25 2014-09-08 Disco Abrasive Syst Ltd Laser processing method
JP2015230964A (en) * 2014-06-05 2015-12-21 株式会社ディスコ Wafer processing method
JP6559013B2 (en) * 2015-08-20 2019-08-14 リンテック株式会社 Sheet sticking device and sticking method
DE102015216619B4 (en) * 2015-08-31 2017-08-10 Disco Corporation Method for processing a wafer
WO2017036512A1 (en) * 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
JP2017079291A (en) * 2015-10-21 2017-04-27 株式会社ディスコ Wafer processing method
JP6906843B2 (en) * 2017-04-28 2021-07-21 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
JP6837717B2 (en) 2021-03-03
KR20180124758A (en) 2018-11-21
TW201903874A (en) 2019-01-16
DE102018207252B4 (en) 2023-08-24
JP2018190938A (en) 2018-11-29
US20180330978A1 (en) 2018-11-15
DE102018207252A1 (en) 2018-11-15
KR102445610B1 (en) 2022-09-20
US10332777B2 (en) 2019-06-25
TWI754737B (en) 2022-02-11
CN108878340A (en) 2018-11-23
CN108878340B (en) 2024-02-20

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