CN108878340A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
- Publication number
- CN108878340A CN108878340A CN201810430170.1A CN201810430170A CN108878340A CN 108878340 A CN108878340 A CN 108878340A CN 201810430170 A CN201810430170 A CN 201810430170A CN 108878340 A CN108878340 A CN 108878340A
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- Prior art keywords
- chip
- protective film
- guard block
- liquid
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000003672 processing method Methods 0.000 title claims abstract description 35
- 230000001681 protective effect Effects 0.000 claims abstract description 159
- 239000007788 liquid Substances 0.000 claims abstract description 92
- 239000011347 resin Substances 0.000 claims abstract description 41
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 230000006837 decompression Effects 0.000 claims description 8
- 238000002309 gasification Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 16
- 230000002093 peripheral effect Effects 0.000 description 10
- 229910001651 emery Inorganic materials 0.000 description 9
- 239000007767 bonding agent Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The processing method of chip is provided, when the back side to chip is ground, can sufficiently inhibit the influence of bumps present in face side, processing after grinding is also simple.The processing method includes：Liquid provides step, provides liquid to the front of the chip on front with device area, the indent and convex device of tool is formed in the device area；Protective film is close to step, presses protective film to the face side of chip across liquid, protective film is made to imitate concave-convex and be tightly attached to face side；Chip forming step with guard block, coats protective film using the guard block being made of the constrictive type liquid resin hardened by outside stimulus, forms the chip with guard block covered by face side of the guard block to chip；It is ground step, the back side of chip is ground in the state that the guard block side to the chip with guard block is kept and keeps chip thinning；And strip step, guard block and protective film are removed from thinning chip.
Description
Technical field
The present invention relates to the processing method of chip, the processing method of chip has indent and convex chip on to front and grinds
Use when cutting.
Background technique
In order to make group enter the device chip miniaturization, lightweight of various electronic equipments etc., before being divided into device chip
Chip process relatively thin chance increase.Such as it is protected using the face side that is provided with device of the chuck table to chip
It holds and presses the grinding tool tool of rotation to the back side of chip, it is thinning so as to be ground to the chip.
When being ground using method as described above to chip, guard block usually is pasted in the face side of chip
(for example, referring to patent document 1).Thereby, it is possible to prevent from keeping the device of face side damaged due to the power etc. applied when grinding.As
Guard block, such as use the splicing tape or substrate with high hardness etc. formed by materials such as resins.
Patent document 1：Japanese Unexamined Patent Publication 10-50642 bulletin
But it is formed in most cases in the face side of the chip because of the convex block etc. that the electrode as device functions
There are bumps.When the face side in chip has bumps, the difference of height of the bumps can not be fully mitigated using splicing tape, can be existed
The back side of chip after grinding occurs and concave-convex corresponding shape.
On the other hand, if using substrate with high hardness as guard block, such problems is hardly generated.But
It is that the substrate is bonded on chip using bonding agents such as thermoplasticity waxes, therefore when removing substrate from chip after grinding, is needed
The cumbersome operation for being only used for removing for being impregnated in solution or be heated at high temperature etc.
Summary of the invention
The present invention is completed in view of the problem, and its purpose is to provide a kind of processing methods of chip, to crystalline substance
When the back side of piece is ground, it can sufficiently inhibit the influence of bumps present in face side, and processing after grinding
Simply.
According to one method of the present invention, the processing method of chip is provided, wherein the processing method of the chip has as follows
The step of：Liquid provides step, to the crystalline substance on front with device area and the periphery remaining area around the device area
The front of piece provides liquid, wherein the indent and convex device of tool is formed in the device area；Protective film is close to step,
Protective film is pressed to the face side of the chip across the liquid and so that the protective film is imitated the bumps and is tightly attached to the front
Side；Chip forming step with guard block coats the protective film using guard block, is formed by the guard block pair
The chip with guard block that the face side of the chip is covered, wherein the guard block is by hard by outside stimulus
The constrictive type liquid resin of change is constituted；It is ground step, in the retaining surface using chuck table to the chip with guard block
The guard block side kept in the state of, the back side of the chip is ground, keeps the chip thinning；And removing
Step removes the guard block and the protective film from the thinning chip.
In one embodiment of the present invention, it is also possible in the strip step, to being present in the protective film and the chip
The front between the liquid heated and make the liquid gasification.
In addition, being also possible in the strip step in one embodiment of the present invention, by the crystalline substance with guard block
Piece is put into decompression chamber, is depressurized to the liquid being present between the protective film and the front of the chip and makes this
Liquid gasification.
In addition, being also possible to provide in step in the liquid, which being provided in one embodiment of the present invention
The central part of the chip.
In addition, being also possible to be close in step in the protective film, by the protection in one embodiment of the present invention
It sprays gas and presses the protective film to the face side of the chip in the face of the side opposite with the face of the chip is faced of film.
In addition, be also possible to be close in step in the protective film in one embodiment of the present invention, it will using pressing roller
The protective film is pressed to the face side of the chip.
In addition, be also possible in the chip forming step at this with guard block in one embodiment of the present invention,
After the chip is pressed into the liquid resin for being coated on flat on piece across the protective film, make this using outside stimulus
Liquid resin hardens and fixes the guard block being made of the liquid resin on this wafer.
In the processing method of the chip of one embodiment of the present invention, it is tightly attached to and is formed with making protective film imitate concave-convex
After the face side for having the chip of indent and convex device, protective film is coated using guard block, is formed by guard block
The chip with guard block that the face side of chip is covered, wherein the guard block by outside stimulus by being hardened
Constrictive type liquid resin constitute, therefore by the way that guard block is formed as thickness appropriate, can sufficiently mitigate face side
It is concave-convex.
In addition, in the processing method of the chip of one embodiment of the present invention, protective film be only tightly attached to device area and not
Be bonded, therefore even if without be impregnated in solution or high-temperature heating etc be only used for removing cumbersome operation, also can
It is enough to remove guard block and protective film from chip.In this way, according to one method of the present invention, the processing method of chip is provided,
When the back side to chip is ground, it can sufficiently inhibit the influence of bumps present in face side, processing after grinding
Also simple.
In addition, in the processing method of the chip of one embodiment of the present invention, across the positive liquid of supply to chip
Protective film is pressed to the face side of chip, therefore the residual air between chip and protective film can be prevented, can make to protect
Film is reliably close to.Even if being protected as a result, using the protective film for not having bonding force brought by bonding agent (paste) in grinding etc.
Cuticula and guard block will not be removed from chip.
Detailed description of the invention
(A) of Fig. 1 is the perspective view for schematically showing the case where facing the face side of protective film and chip, (B) of Fig. 1
It is the perspective view for schematically showing the state for the face side for making protective film be tightly attached to chip.
(A) of Fig. 2 is the cross-sectional view for schematically showing the state for facing the face side of protective film and chip, (B) of Fig. 2
It is cross-sectional view the case where schematically showing the face side for making protective film be tightly attached to chip.
(A) of Fig. 3 is the cross-sectional view for schematically showing the state for the face side for making protective film be tightly attached to chip, (B) of Fig. 3
It is the cross-sectional view for schematically showing a part of chip for the state that protective film has been close to.
(A) of Fig. 4 is to schematically show the feelings for pressing chip on the liquid resin for be coated on piece across protective film
The cross-sectional view of condition, (B) of Fig. 4 are to schematically show that liquid resin is made to harden and fix the guard block being made of liquid resin
The cross-sectional view of situation on the wafer, (C) of Fig. 4 are the cross-sectional views for schematically showing the completed chip with guard block.
(A) of Fig. 5 is the cross-sectional view for schematically showing the case where being ground to the back side of chip, and (B) of Fig. 5 is signal
Property shows the cross-sectional view of chip after grinding.
Fig. 6 is the cross-sectional view for schematically showing the case where removing protective film, guard block etc. from chip.
Fig. 7 is schematically shown protective film and protection in the strip step of the processing method of the chip of the 1st variation
The cross-sectional view for the case where component etc. is removed from chip.
Fig. 8 is schematically shown protective film and protection in the strip step of the processing method of the chip of the 2nd variation
The cross-sectional view for the case where component etc. is removed from chip.
(A) of Fig. 9 and (B) of Fig. 9 be for the processing method of the chip to the 3rd variation protective film be close to step into
The schematic cross sectional views of row explanation.
Label declaration
11：Chip；11a：Front；11b：The back side；11c：Outer peripheral edge；11d：Device area；11e：Periphery remaining area；
13：Divide preset lines (spacing track)；15：Device；17：Convex block (bumps)；21：Protective film；23：Liquid；25：Piece (slide glass)；27：
Liquid resin；29：Guard block；31：Piece (release sheet)；2：Protective film abutting device；4：Supporting table；4a：Bearing surface；
4b：Guide portion；6：Protective film holding unit；6a：Retaining surface；6b：1st flow path；6c：2nd flow path；8：Valve；10：Attraction source；12：
Valve；14：Compressed air provides source；16：Valve；18：Valve；20：Heater；22：Guard block fixes device；24：Keep workbench；
24a：Recess portion；24b：Attraction road；26：Ultraviolet light source；28：Plate；30：Valve；32：Attraction source；34：Wafer holding unit；34a：
Lower surface；42：Grinding attachment；44：It keeps workbench (chuck table)；44a：Retaining surface；46：Grinding unit；48：Main shaft；
50：Mounting base；52：It is ground emery wheel；54：Emery wheel base station；56：It is ground grinding tool；62：Wafer holding unit；62a：Retaining surface；64：
Stripping unit；66：Heater；72：Decompression chamber；72a：Cabinet；72b：Door body；72c：Opening portion；74：Exhaust pipe；76：Valve；
78：Air inlet pipe；80：Valve；82：Bearing；84：Wafer holding unit；84a：Lower surface；86：Heater；88：Stripping unit；92：
Keep workbench；92a：Retaining surface；94：Heater；96：Roller.
Specific embodiment
Referring to attached drawing, the embodiment of one embodiment of the present invention is illustrated.The processing of the chip of present embodiment
Method include liquid step is provided, protective film be close to step ((B) of (A), Fig. 1 referring to Fig.1, (A) of Fig. 2, Fig. 2 (B),
(B) of (A) of Fig. 3, Fig. 3), chip forming step with guard block (referring to (A) of Fig. 4, (B) of Fig. 4, Fig. 4 (C)),
It is ground step (referring to (A) of Fig. 5, (B) of Fig. 5) and strip step (referring to Fig. 6).
It is provided in step in liquid, provides liquid to the face side that indent and convex chip is arranged on front.In protective film
It is close in step, the bumps of the face side of chip is set according to (imitating) and make do not have bonding brought by bonding agent (paste)
The protective film of power is tightly attached to the face side of chip.In the chip forming step with guard block, constituted using by liquid resin
Guard block protective film is coated, formed by face side of the guard block to chip covered with guard block
Chip.
In grinding step, the retaining surface using chuck table to the guard block side of the chip with guard block into
It has gone and the back side of chip has been ground in the state of keeping.It is in strip step, guard block and protective film is thinning from
Chip removing.Hereinafter, the processing method of the chip of present embodiment is described in detail.
In the processing method of the chip of present embodiment, progress liquid first provides step, is provided on front
The face side of concave-convex chip provides liquid, then carries out protective film and is close to step, makes do not have bonding agent institute according to the bumps
The protective film of bring bonding force is tightly attached to the face side of chip.That is, protective film is pressed to the face side of chip across liquid
And make its abutting.
(A) of Fig. 1 is the perspective view for schematically showing the case where facing the face side of protective film and chip, (B) of Fig. 1
It is the perspective view for schematically showing the state for the face side for making protective film be tightly attached to chip.(A) of Fig. 2 is to schematically show to make to protect
The cross-sectional view for the state that the face side of cuticula and chip faces, (B) of Fig. 2, which is schematically shown, makes protective film be tightly attached to chip
The cross-sectional view of the case where face side.
In addition, (A) of Fig. 3 is the cross-sectional view for schematically showing the state for the face side for making protective film be tightly attached to chip, Fig. 3
(B) be the cross-sectional view for schematically showing a part of chip for the state that protective film has been close to.In addition, in (A), Fig. 2 of Fig. 2
(B) and Fig. 3 (A) in, by a part structural element indicated with functional block.
Shown in (A) such as Fig. 1 etc., the material such as using silicon (Si) of chip 11 used in the present embodiment is formed as
With the discoid of positive 11a and back side 11b.The positive side 11a and the back side side 11b of the outer peripheral edge 11c of the chip 11 carries out
Chamfering.
In addition, the positive side 11a of the chip 11 is divided into the device area 11d in center and around the periphery of device area 11d
Remaining area 11e.Device area 11d is further divided into multiple areas by the segmentation preset lines (spacing track) 13 of clathrate arrangement
Domain is formed with the devices 15 such as IC (Integrated Circuit, integrated circuit) in each region.On the front of each device 15
It is provided with the multiple convex blocks (bumps) 17 functioned as electrode.The convex block 17 is formed such as the material as solder.
In addition, in the present embodiment, using the discoid chip 11 formed by materials such as silicon, but for chip 11
There is no limit for material, shape, construction, size etc..Also it can be used and formed by materials such as other semiconductors, ceramics, resin, metals
Chip 11.It is not also limited similarly, for the type of device 15 and convex block 17, quantity, shape, construction, size, configuration etc.
System.It can replace convex block 17 and form the construction (bumps) with other function.That is, can also be in the positive side 11a of chip 11
Convex block 17 is not formed.
It is provided in step in liquid, provides liquid 23 (referring to (A) of Fig. 2 to the positive side 11a of thus configured chip 11
Deng).Type for being provided to the liquid 23 of chip 11 is not particularly limited, it is expected that being not easy gas using under room temperature (20 DEG C)
Change and the not excessively high liquid of boiling point (such as boiling point is 100 DEG C of liquid below).
As such liquid 23, for example, water.In addition, in the present embodiment, liquid 23 is provided to crystalline substance
The central part of the positive side 11a of piece 11.It is of course also possible to which liquid 23 to be provided to other one of the positive side 11a of chip 11
Divide (a part i.e. other than central part) or liquid 23 is provided to the whole (entirety) of the positive side 11a of chip 11.
After liquid provides step, carries out protective film and be close to step, so that protective film 21 is tightly attached to chip across liquid 23
The 11 positive side 11a.Protective film 21 is, for example, the soft film formed by materials such as resins, is formed to have and is equal with chip 11
Diameter it is discoid.In addition, the not set bonding agent on the protective film 21.The thickness of protective film 21 is not limited especially
System, such as use the protective film 21 with a thickness of 30 μm~150 μm or so.
Protective film is close to step and is for example carried out using such protective film abutting device shown in (A) of Fig. 22.Protective film
Abutting device 2 has the supporting table 4 for being supported to chip 11.The upper surface of supporting table 4 is generally flatly
It is formed, is functioned as the bearing surface 4a for being supported to chip 11.It is provided on bearing surface 4a for chip
The guide portion 4b for the convex that 11 position is defined.
Be configured in the top of supporting table 4 is made it be tightly attached to chip for being attracted protective film 21, being kept
Protective film holding unit 6 on 11.The lower surface of protective film holding unit 6 is generally flatly formed, as to protective film
The retaining surface 6a 21 attracted, kept is functioned.Protective film holding unit 6, can by mobile mechanism's bearing (not shown)
Protective film 21 is attracted on one side, is kept, is moved in vertical direction on one side.
The region of a part for the retaining surface 6a that the one end of the 1st flow path 6b is kept in the peripheral part to protective film 21
Opening.The another side of 1st flow path 6b is branched off into multiple.The 1st branch of 1st flow path 6b is equal via valve 8 and connects with source 10 is attracted
It connects, the 2nd branch of the 1st flow path 6b is equal via valve 12 and provides source 14 with compressed air and connect.
On the other hand, the retaining surface 6a's that the one end of the 2nd flow path 6c is kept in the central portion to protective film 21 is another
The region openings of a part.The another side of 2nd flow path 6c is also branched off into multiple.The 1st branch of 2nd flow path 6c is via valve 16 etc.
And it is connect with the 3rd branch of the 1st flow path 6b.The 2nd branch of 2nd flow path 6c is equal via valve 18 and provides source 14 with compressed air and connects
It connects.In addition, in the heater 20 of protective film holding unit 6 being internally provided with for being heated to retaining surface 6a.
As shown in (A) of Fig. 2, it is close in step in protective film, first, in accordance with the back side 11b and supporting table of chip 11
Chip 11 is placed in supporting table 4 by the mode of 4 bearing surface 4a contact.Chip 11 reveals in the positive side 11a to top as a result,
It is supported in the state of out by supporting table 4.In addition, making protective film 21 and protective film holding unit according to the position of the chip 11
6 retaining surface 6a contact.Specifically, by the surface of the position of the outer peripheral edge of protective film 21 and the outer peripheral edge 11c of chip 11
Alignment.
Then, valve 8,16 is opened, makes the suction function in attraction source 10 in protective film 21.Protective film 21 is protected as a result,
Film holding unit 6 attracts, keeps, and becomes the state of the positive side pair 11a of protective film 21 and chip 11.In addition, by valve 8,
Before 16 open, valve 12,18 is closed in advance, the air (gas) compressed is not provided to the 1st flow path 6b and the 2nd flow path 6c.
In addition, the position of the vertical direction of protective film holding unit 6 is for example according between the positive 11a of chip 11 and protective film 21
The mode for being divided into 0.1mm~10mm or so is adjusted.
Add the positive side 11a of protective film 21 and chip 11 using heater 20 to retaining surface 6a to later
Heat softens protective film 21 by heat.Then, as shown in (B) of Fig. 2, valve 16 is closed, cutting attraction source 10 is flowed to the 2nd
Then the negative pressure of road 6c is opened valve 18, provide source 14 from compressed air and provide the air compressed to the 2nd flow path 6c.
As a result, to protective film 21 contacted with retaining surface 6a upper surface (in face of the opposite side in the face of chip 11
Face) central portion spray air, as shown in (B) of Fig. 2, the central portion of protective film 21 bloats downwards and to the front of chip 11
The side 11a is pressed.In the present embodiment, it is provided in step in liquid and liquid 23 is provided to the positive side 11a of chip 11, because
This protective film 21 clips a little liquid 23 (across liquid 23) between chip 11 and is pressed to the positive side 11a of chip 11
Pressure.
When continuing the injection of air, protective film 21 is from the central part of chip 11 towards radial outside sequentially to chip
The 11 positive side 11a is pressed.In the positive side 11a that the region other than peripheral part of protective film 21 is pressed into chip 11
Later, as shown in (A) of Fig. 3, valve 8 is closed, attraction source 10 is cut off to the negative pressure of the 1st flow path 6b, then opens valve 12, from
Compressed air provides source 14 and provides the air compressed to the 1st flow path 6b.As a result, to the upper surface side of the peripheral part of protective film 21
Air is sprayed, the peripheral part of protective film 21 is also pressed to the positive side 11a of chip 11.
As a result, can be arranged according to (imitating) in chip 11 as shown in (B) of (B) of Fig. 1, (A) of Fig. 3 and Fig. 3
The shapes such as the convex block 17 of the positive side 11a and so that protective film 21 is tightly attached to the positive side 11a of chip 11.In the present embodiment,
Protective film 21 is heated using heater 20 and makes its softening, therefore protective film 21 can be made according to shapes such as convex blocks 17
Suitably it is close to.
In addition, in the present embodiment, when pressing protective film 21 to the positive side 11a of chip 11, liquid 23 is mobile
And air is squeezed out, therefore the residual air between chip 11 and protective film 21 can be prevented, protective film 21 can be made reliably tight
Patch.Also, fraction of liquid 23 is remained between protective film 21 and chip 11.That is, clipping fraction of liquid between chip 11
Body 23 and protective film 21 and the positive side 11a of chip 11 are close together.
After protective film is close to step, the chip forming step with guard block is carried out, is constituted using by liquid resin
Guard block protective film 21 is coated, formed by positive 11a side of the guard block to chip 11 covered band protect
Protect the chip of component.
(A) of Fig. 4 be schematically show across protective film 21 by chip 11 on the liquid resin for be coated on piece by
The cross-sectional view of the case where pressure, (B) of Fig. 4 are to schematically show the protection portion that hardens liquid resin and will be made of liquid resin
Part is fixed on the cross-sectional view of the situation on chip 11, and (C) of Fig. 4 is to schematically show the completed chip with guard block
Cross-sectional view.In addition, the structural element of a part is indicated with functional block in (A) of Fig. 4 and (B) of Fig. 4.
The chip forming step with guard block of present embodiment is for example using shown in (B) of (A) of Fig. 4 and Fig. 4
Guard block fixes device 22 to carry out.The fixed device 22 of guard block has for the general planar by formation such as resins
The holding workbench 24 that piece (slide glass) 25 is kept.It is bigger than chip 11 keeping the upper surface side of workbench 24 to be formed with diameter
Circular recess portion 24a.
Ultraviolet light source 26 is configured in the inside of recess portion 24a.The upper end of recess portion 24a is covered by plate 28, which makes
At least part of the ultraviolet light radiated from ultraviolet light source 26 penetrates, and a part of the center side of piece 25 is supported by plate 28.With
The one end for the air inlet path 24b that a part in the peripheral side to piece 25 is attracted is keeping enclosing for the upper surface of workbench 24
Around the region openings of recess portion 24a.
The another side of air inlet path 24b is connect via valve 30 is equal with source 32 is attracted.Make attraction source 32 by air inlet path 24b
Suction function is in a part of the peripheral side of piece 25, so that piece 25, which is held in, keeps workbench 24.In the holding workbench 24
Top configured with wafer holding unit 34 for being attracted chip 11, being kept.
Wafer holding unit 34 on one side carries out chip 11 in its lower surface side 34a by mobile mechanism's bearing (not shown)
Attract, keep, is moved in vertical direction on one side.In addition, as the wafer holding unit 34, such as using utilization negative pressure to crystalline substance
Piece 11 attracted, is kept vacuum attraction type wafer holding unit and chip 11 is attracted using electrostatic force, is kept
Electrostatic adsorption type wafer holding unit etc..
In the chip forming step with guard block, as shown in (A) of Fig. 4, by keeping workbench 24 in upper table
The lower face side that the piece 25 of liquid resin 27 is coated on face is kept.In addition, in the lower surface 34a of wafer holding unit 34
Side keeps the back side side 11b of chip 11.It is tightly attached on the protective film 21 and piece 25 of the positive side 11a of chip 11 as a result,
Liquid resin 27 face.
As the liquid resin 27, such as use the constrictive type hardened by the ultraviolet light radiated from ultraviolet light source 26
Liquid resin.Specifically, the TEMPLOC (registered trademark) etc. of electrochemical Co., Ltd.'s manufacture can be used for example.In addition, at this
In embodiment, by keeping workbench 24 to keep the piece 25 for the state for being coated with liquid resin 27 on an upper,
But liquid resin 27 can also be coated on the upper surface of piece 25 after by keeping 24 pairs of pieces 25 of workbench to keep.
Additionally, it is desirable to which liquid resin 27 is coated into the shape that central portion is raised slightly, without being coated into completely flat shape.
Then, make wafer holding unit 34 decline, as shown in (B) of Fig. 4 across protective film 21 by chip 11 just
The face side 11a is pressed to liquid resin 27.As a result, liquid resin 27 chip 11 radially extension, and to protective film 21 into
Row cladding.In addition, in the present embodiment, coating weight, the slippage of wafer holding unit 34 etc. of liquid resin 27 are adjusted, with
Cover the entire front side 11a of chip 11 by liquid resin 27.
Then, ultraviolet light is radiated from ultraviolet light source 26 and harden liquid resin 27.As a result, as shown in (C) of Fig. 4,
By the positive side 11a being made of liquid resin 27, being fixed on chip 11 to the guard block 29 that protective film 21 coats, energy
Enough form the chip with guard block covered by positive 11a side of the guard block 29 to chip 11.
After the chip forming step with guard block, grinding step is carried out, the back side 11b of chip 11 is ground
It cuts.(A) of Fig. 5 is the cross-sectional view for schematically showing the case where being ground to the back side 11b of chip 11, and (B) of Fig. 5 is signal
Property shows the cross-sectional view of chip 11 after grinding.
Grinding step is for example carried out using grinding attachment 42 shown in (A) of Fig. 5.Grinding attachment 42 has for crystalline substance
The holding workbench (chuck table) 44 that piece 11 is attracted, kept.Keep the rotary driving sources such as workbench 44 and motor
Connection (not shown) is rotated around with the substantially parallel rotary shaft of vertical direction.In addition, keeping the lower section of workbench 44 to be provided with
Mobile mechanism (not shown) keeps workbench 44 to move in the horizontal direction by the mobile mechanism.
Keep a part of the upper surface of workbench 44 become to be fixed on across guard block 29 piece 25 of chip 11 into
The retaining surface 44a that row attracts, keeps.Air inlet path (not shown) of the retaining surface 44a through the formation of the inside for keeping workbench 44
Deng and with attract source (not shown) connect.Make the suction function in attraction source in retaining surface 44a, so that chip 11 is across piece 25 and protects
Shield component 29, which is held in, keeps workbench 44.
Grinding unit 46 is configured in the top for keeping workbench 44.Grinding unit 46 has by elevating mechanism (not shown)
The main shaft housing (not shown) of bearing.Main shaft 48 is stored in main shaft housing, is fixed in the lower end of main shaft 48 discoid
Mounting base 50.
Grinding emery wheel 52 with 50 roughly the same diameter of mounting base is installed on the lower surface of mounting base 50.It is ground emery wheel
52 have the emery wheel base station 54 formed by metal materials such as stainless steel, aluminium.It is annularly arranged on the lower surface of emery wheel base station 54
There are multiple grinding grinding tools 56.
It is linked with the rotary driving sources such as motor (not shown) in the upper end side (base end side) of main shaft 48, grinding emery wheel 52 is logical
The power generated from the rotary driving source is crossed, is rotated around with the substantially parallel rotary shaft of vertical direction.In the inside of grinding unit 46
Or nearby it is provided with the nozzle (not shown) for the grinding fluids such as pure water to be provided to chip 11 etc..
In grinding step, chip 11 is made to attract, be held in the holding workbench 44 of grinding attachment 42 first.It is specific and
Speech contacts the piece 25 being fixed on chip 11 across guard block 29 with the retaining surface 44a of workbench 44 is kept, and acts on suction
Draw the negative pressure in source.Chip 11 is overleaf held in the state that the side 11b is exposed to top and keeps workbench 44 as a result,.
Then, make to keep workbench 44 mobile to the lower section of grinding unit 46.Then, as shown in (A) of Fig. 5, make respectively
It keeps workbench 44 and grinding emery wheel 52 to rotate, provides grinding fluid to back side 11b of chip 11 etc. on one side, make main shaft housing on one side
(main shaft 48, grinding emery wheel 52) decline.
According in such a way that the lower surface for being ground grinding tool 56 is pressed into the back side side 11b of chip 11 by power appropriate to main shaft
The decrease speed (slippage) of shell is adjusted.Keep chip 11 thinning thereby, it is possible to be ground to the back side side 11b.Such as
Shown in (B) of Fig. 5, when chip 11 is thinned to defined thickness (completion thickness), grinding step terminates.
In addition, in the present embodiment, be ground using back side 11b side of 1 group of grinding unit 46 to chip 11, but
Also 2 groups or more of grinding unit can be used to be ground chip 11.In this case, such as the abrasive grain big by diameter is used
The grinding grinding tool of composition carries out corase grinding and cuts, and carries out fine ginding using the grinding grinding tool being made of the small abrasive grain of diameter, thus not
It can increase substantially and be ground the required time and can be improved the flatness of back side 11b.
After being ground step, strip step is carried out, protective film 21, guard block 29 etc. are shelled from thinning chip 11
From.Fig. 6 is the cross-sectional view for schematically showing the case where removing protective film 21, guard block 29 etc. from chip 11.
In the strip step, first with wafer holding unit 62 retaining surface 62a to the back side side 11b of chip 11 into
Row attracts, keeps.As wafer holding unit 62, it can be used for example and chip 11 is attracted using negative pressure, keeps true
The electrostatic adsorption type wafer holding unit that suction is drawn type wafer holding unit and attracted using electrostatic force chip 11, kept
Deng.
After having carried out attracting, keeping to chip 11 using wafer holding unit 62,64 pairs of pieces 25 of stripping unit are utilized
End held.Then, move wafer holding unit 62 and stripping unit 64 relatively, so as to by the end side of piece 25
It is removed from chip 11.As a result, as shown in fig. 6, can remove protective film 21, piece 25 and guard block 29 from chip 11 together.
As described above, making in the processing method of the chip of present embodiment according to the shape of (imitating) convex block 17
Protective film 21 is tightly attached to the positive side 11a for the chip 11 for being formed with the device 15 with convex block (bumps) 17, then utilize by because
Ultraviolet light (outside stimulus) and harden constrictive type liquid resin 27 constitute guard block 29 protective film 21 is coated, shape
At the chip with guard block covered by positive 11a side of the guard block 29 to chip 11, therefore by by protection portion
Part 29 is formed as thickness appropriate, can sufficiently mitigate bumps caused by the convex block 17 of the positive side 11a.
In addition, in the processing method of the chip of present embodiment, protective film 21 be only tightly attached to device area 11d and not into
Row bonding, therefore even if without be impregnated in solution or high-temperature heating etc be only used for removing cumbersome operation, also can
Guard block 29 and protective film 21 are removed from chip 11.In this way, according to the present embodiment, providing a kind of processing side of chip
Method can sufficiently inhibit caused by convex block 17 present in the positive side 11a when the back side side 11b to chip 11 is ground
Concave-convex influence, and processing after grinding is also simple.
In addition, the liquid in the processing method of the chip of present embodiment, across the positive side 11a for being provided to chip 11
23 press protective film 21 to the positive side 11a of chip 11, therefore can prevent from remaining between chip 11 and protective film 21 empty
Gas can be such that protective film 21 is reliably close to.Even if as a result, using the protection for not having bonding force brought by bonding agent (paste)
Film 21, in grinding etc., protective film 21 and guard block 29 will not be removed from chip 11.
In addition, the record that the present invention is not limited to the above embodiments, various modifications may be made and implements.Such as above-mentioned
In embodiment, as liquid resin 27, the hardening resin hardened by ultraviolet light is used, but also can be used because ultraviolet
Outside stimulus (such as hot etc.) other than line and the constrictive type liquid resin hardened.
In addition, in the above-described embodiment, the discoid protective film 21 with the diameter being equal with chip 11 has been used,
But the diameter of protective film 21 can also be smaller than the diameter of chip 11.Such as protective film 21 can be formed to have and device area
The corresponding diameter of 11d it is discoid.In this case, the guard block 29 being made of liquid resin 27 is tightly attached to the outer of chip 11
All remaining area 11e, therefore even if can will also be protected using the protective film 21 for not having bonding force brought by bonding agent (paste)
Cuticula 21 and guard block 29 are strongly fixed on chip 11.
In addition, in the above-described embodiment, using across protective film 21 by chip 11 to the liquid tree being coated on piece 25
Guard block 29 is fixed on chip 11 by the method that rouge 27 presses, and is utilized however, you can also not use piece 25 to chip or protection
Film is added dropwise liquid resinous method and guard block is fixed on chip.In this case, it is desirable to use planisher (surface
) etc. planer the surface of guard block is planarized.In this way, the table of the guard block kept when by grinding chip
Face is planarized, and can be ground to the back side of the chip as ground face and it is made to become flat.
In addition, in the above-described embodiment, it is tightly attached to protective film 21 in the state that Yin Re softens on chip 11, but
It is not necessarily required to be tightly attached to protective film 21 in the state of softening on chip 11.Alternatively, it is also possible to using with heater 20 plus
The different method of heat softens protective film 21.Such as can use the method that the air (gas) heated is sprayed protective film 21
Soften protective film 21.
In addition, in the above-described embodiment, being held using the end to piece 25 and simply from the removing of chip 11
Method removes protective film 21, piece 25 and guard block 29, but also can use other methods to protective film 21,25 and of piece
Guard block 29 is removed.Fig. 7 is to schematically show to protect in the strip step of the processing method of the chip of the 1st variation
The cross-sectional view for the case where cuticula 21 and guard block 29 etc. are removed from chip 11.In addition, each step other than strip step
It can be identical as above embodiment.
In the strip step of the 1st variation, as shown in fig. 7, first with 62a pairs of retaining surface of wafer holding unit 62
The back side side 11b of chip 11 is attracted, is kept.As wafer holding unit 62, can be used for example using negative pressure to chip
The vacuum attraction type wafer holding unit that 11 attracted, keeps and chip 11 is attracted using electrostatic force, keeps quiet
Electro Sorb type wafer holding unit etc..In addition, there is heater 66 using in inside in the strip step of the 1st variation
Wafer holding unit 62.
After having carried out attracting, keeping to chip 11 using wafer holding unit 62,64 pairs of pieces 25 of stripping unit are utilized
End held.Then, move wafer holding unit 62 and stripping unit 64 relatively, so as to by the end side of piece 25
It is removed from chip 11.At this point it is possible to be added using heater 66 to the liquid 23 remained between protective film 21 and chip 11
Heat and be vaporized.As a result, as shown in fig. 7, can remove protective film 21, piece 25 and guard block 29 from chip 11 together.
In the processing method of the chip of the 1st variation, using heater 66 to remaining in protective film 21 and chip 11
Between liquid 23 heated and be vaporized, therefore be easy protective film 21 is removed.
Fig. 8 is schematically shown protective film 21 and guarantor in the strip step of the processing method of the chip of the 2nd variation
Protect the cross-sectional view for the case where component 29 etc. is removed from chip 11.In addition, each step other than strip step can with it is above-mentioned
Embodiment is identical.
The strip step of 2nd variation is for example carried out using decompression chamber 72 as shown in Figure 8.Decompression chamber 72
Such as have：Cabinet 72a has the opening for the size that chip 11 can be made to pass through；And door body 72b, it is used for cabinet 72a
Opening close.Attraction source (not shown) is connected with via exhaust pipe 74 and valve 76 etc. on cabinet 72a.In addition, in cabinet 72a
On be connected with air inlet pipe 78 and valve 80 for attracting air (atmosphere).
Opening portion 72c up and down is formed on door body 72b.In the 72c of the opening portion, by the high axis of air-tightness
82 are held to wait and be inserted into, be supported with wafer holding unit 84.The general planar that there is wafer holding unit 84 diameter to be greater than chip 11
Lower surface 84a.
As wafer holding unit 84, the electrostatic for being attracted using electrostatic force chip 11, being kept can be used for example
Absorbent-type wafer holding unit.In addition, being internally provided with heater 86 in the wafer holding unit 84.In wafer holding unit
Stripping unit 88 is configured near 84.
In the strip step of the 2nd variation, first with the retaining surface 84a of wafer holding unit 84 to the back of chip 11
The face side 11b is attracted, is kept.Then, as shown in figure 8, door body 72b is closed, closes valve 80, then valve 76 is opened,
To which the space of the inside to decompression chamber 72 is depressurized.
After the space of the inside to decompression chamber 72 is depressurized, using 88 pairs of pieces 25 of stripping unit end into
Row is held.Then, wafer holding unit 84 and stripping unit 88 are moved relatively, so as to by the end side of piece 25 from chip 11
Removing.At this point it is possible to be heated using heater 86 to the liquid 23 remained between protective film 21 and chip 11 and make it
Gasification.As a result, as shown in figure 8, can remove protective film 21, piece 25 and guard block 29 from chip 11 together.
In the processing method of the chip of the 2nd variation, protective film 21 is removed from chip 11 under reduced pressure, therefore residual
The liquid 23 stayed between protective film 21 and chip 11 gasifies and is easy to remove protective film 21.
In addition, in the above-described embodiment, the method using injection air is tightly attached to protective film 21 on chip 11, but
Can use other methods is tightly attached to protective film 21 on chip 11.(A) of Fig. 9 and (B) of Fig. 9 are for the 3rd variation
The protective film of processing method of chip be close to the schematic cross sectional views that are illustrated of step.
The chip of the 3rd variation processing method liquid provide step in, it is expected that at least to make protective film 21 with
The region that the abutting of chip 11 starts provides liquid 23.Thereby, it is possible to prevent the residual air between chip 11 and protective film 21,
Protective film 21 can be made reliably to be close to.In addition, each step other than liquid provides step and protective film is close to step can
With identical as above embodiment or variation.
It is close in step in the protective film of the 3rd variation, first with the retaining surface 92a of holding workbench 92 to chip 11
The back side side 11b kept.Keep the basic structure of workbench 92 can be identical as the structures such as workbench 44 are kept.But,
In the heater 94 for being internally provided with heating of the holding workbench 92.
Then, make the front of the protective film 21 being maintained in the state of the lower face side of piece (release sheet) 31 Yu chip 11
The side pair 11a presses downward the upper surface side of release sheet 31 using roller 96.At this point it is possible to be protected using 94 Duis of heater
Film 21 is heated and makes its softening.Thereby, it is possible to be overlapped protective film 21 across liquid 23 and be tightly attached to the front of chip 11
The side 11a.In addition, this protective film carried out using roller 96 is close to step and can carried out in decompression chamber.
In addition to this, as long as the construction of above embodiment and variation, method etc. are not departing from the purpose of the present invention
Range can then be suitably changed and implemented.
Claims (7)
1. a kind of processing method of chip, which is characterized in that the processing method of the chip has following step：
Liquid provides step, to the chip of the periphery remaining area on front with device area and around the device area
The front provides liquid, wherein the indent and convex device of tool is formed in the device area；
Protective film is close to step, presses protective film to the face side of the chip across the liquid and the protective film is made to imitate this
It is concave-convex and be tightly attached to the face side；
Chip forming step with guard block coats the protective film using guard block, is formed by the guard block
The chip with guard block that the face side of the chip is covered, wherein the guard block is by passing through outside stimulus
The constrictive type liquid resin of hardening is constituted；
It is ground step, is carried out in the guard block side of the retaining surface using chuck table to the chip with guard block
In the state of holding, the back side of the chip is ground, keeps the chip thinning；And
Strip step removes the guard block and the protective film from the thinning chip.
2. the processing method of chip according to claim 1, which is characterized in that
In the strip step, the liquid being present between the protective film and the front of the chip is heated and makes this
Liquid gasification.
3. the processing method of chip according to claim 1, which is characterized in that
In the strip step, which is put into decompression chamber, to be present in the protective film with should
The liquid between the front of chip is depressurized and makes the liquid gasification.
4. according to claim 1 to the processing method of chip described in any one in 3, which is characterized in that
It is provided in step in the liquid, which is provided to the central part of the chip.
5. according to claim 1 to the processing method of chip described in any one in 4, which is characterized in that
It is close in step in the protective film, gas is sprayed by the face of the side opposite with the face of the chip is faced to the protective film
Body and by the protective film to the face side of the chip press.
6. according to claim 1 to the processing method of chip described in any one in 4, which is characterized in that
It is close in step in the protective film, is pressed the protective film to the face side of the chip using pressing roller.
7. according to claim 1 to the processing method of chip described in any one in 6, which is characterized in that
In the chip forming step with guard block, the chip is pressed into across the protective film be coated on it is flat
After the liquid resin of on piece, using outside stimulus make the liquid resin harden and the protection that will be made of the liquid resin
Component is fixed on this wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2017094917A JP6837717B2 (en) | 2017-05-11 | 2017-05-11 | Wafer processing method |
| JP2017-094917 | 2017-05-11 |
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| US (1) | US10332777B2 (en) |
| JP (1) | JP6837717B2 (en) |
| KR (1) | KR102445610B1 (en) |
| CN (1) | CN108878340B (en) |
| DE (1) | DE102018207252B4 (en) |
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| JP7071782B2 (en) * | 2017-12-28 | 2022-05-19 | 株式会社ディスコ | Wafer processing method |
| JP2022126401A (en) | 2021-02-18 | 2022-08-30 | キオクシア株式会社 | Manufacturing apparatus and its operation method, and method for manufacturing semiconductor device |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102018207252B4 (en) | 2023-08-24 |
| US20180330978A1 (en) | 2018-11-15 |
| US10332777B2 (en) | 2019-06-25 |
| TWI754737B (en) | 2022-02-11 |
| SG10201803743RA (en) | 2018-12-28 |
| TW201903874A (en) | 2019-01-16 |
| DE102018207252A1 (en) | 2018-11-15 |
| CN108878340B (en) | 2024-02-20 |
| JP6837717B2 (en) | 2021-03-03 |
| JP2018190938A (en) | 2018-11-29 |
| KR20180124758A (en) | 2018-11-21 |
| KR102445610B1 (en) | 2022-09-20 |
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