JP4484982B2 - Adhesive sticking method - Google Patents

Adhesive sticking method Download PDF

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Publication number
JP4484982B2
JP4484982B2 JP15248699A JP15248699A JP4484982B2 JP 4484982 B2 JP4484982 B2 JP 4484982B2 JP 15248699 A JP15248699 A JP 15248699A JP 15248699 A JP15248699 A JP 15248699A JP 4484982 B2 JP4484982 B2 JP 4484982B2
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JP
Japan
Prior art keywords
adherend
adhesive
adhesive tape
base
adhesive material
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JP15248699A
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Japanese (ja)
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JP2000336322A (en
Inventor
勇人 野口
秀二 黒川
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Lintec Corp
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Lintec Corp
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  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は粘着材の貼付方法に係り、特に、極薄化した半導体ウェハの製造に好適となる粘着材の貼付方法に関する。
【0002】
【従来の技術】
例えば、シリコン等の半導体ウェハは、大径の円盤状に製造され、その表面に回路パターンが形成された後、裏面側が切削加工される。この半導体ウェハの厚みは、当該半導体ウェハから得られる半導体チップの厚みに応じて決定されるものであるが、従来では、400μm〜300μmが一般的であった。ところが、近時においては、ICカード等の普及に伴って、厚みが100μm〜50μm程度、場合によっては30μm程度の極簿化された半導体チップが要求されつつあるのが現状である。
【0003】
前記半導体ウェハを極薄化する方法としては、ガラス板等からなる硬質の基台を用い、その上面側にワックスを塗布した上で、回路面を基台面側に向けた半導体ウェハを載せて、当該半導体ウェハの裏面側を切削する方法が知られている。
【0004】
【発明が解決しようとする課題】
しかしながら、前記ワックスを用いた切削方法にあっては、ワックスを均一厚さに塗布することが困難であり、50μm程度の極薄化したICチップを製造する際に要求される厚みの精度を十分に確保することができないという不都合を招来する。また、ワックスをウェハ切削後に有機溶媒等で洗浄しなければならない他、切削後の半導体ウェハを一単位毎の半導体チップにダイシングする場合に、ワックスを除去した後、半導体ウェハにダイシングテープを新たに貼付することも必要であり、作業工程の複雑化をもたらすという不都合もある。更に、ワックスを半導体ウェハから除去することが困難で、その際に半導体ウェハ等の製品を破壊する虞もある。従って、前記ワックスを用いた切削方法にあっても、近時において要求される極薄化した半導体ウェハの製造に際して必ずしも好適であるとは言えない。
【0005】
【発明の目的】
本発明は、このような不都合に着目して案出されたものであり、その主たる目的は、半導体ウェハ等の切削対象物の切削精度を向上させるとともに、その切削に付随する作業を簡易に行うことができる粘着材の貼付方法を提供することにある。
【0006】
また、本発明の他の目的は、粘着材の撓みを利用して当該粘着材を被着体に貼付することができない状況、すなわち、例えば、可撓性の小さい被着体を半導体ウェハ等に貼付された粘着テープの粘着面に貼付する際においても、その際における空気の混入を防止することができる粘着材の貼付方法を提供することにある。
【0007】
【課題を解決するための手段】
前記目的を達成するため、本発明は、液体中で、被着体に粘着テープが貼付された半導体ウェハを貼付するという方法を採っている。このような方法によれば、空気の含有量の少ない液体中で、被着体を粘着テープに貼付するため、その際に、被着体と粘着テープとの間に空気が混入することを防止でき、それらの間の空気溜りの発生を抑制することができる。
【0008】
本発明において、前記被着体の一端を前記粘着テープの粘着面に当接させる一方、その他端を前記粘着面から離間させて、前記被着体を前記粘着テープに対して傾斜配置した後、その被着体を、当該被着体の一端から他端に向って次第に前記粘着テープに接近させることで、前記被着体と粘着テープの間の液体を追い出しながら、前記被着体を粘着テープに貼付する、という方法を採ることが好ましい。このようにすることで、被着体と粘着テープとの間の空気の混入を一層確実に防止することができる。
【0009】
また、前記被着体を粘着テープに貼付する前に、UV光を照射して前記被着体に親水性を増大する工程を含む、という方法も併せて採用することができる。これにより、被着体の水はじきを一層低減することができ、被着体を粘着テープに貼付した後に、被着体の接着面及び粘着材の粘着面の空気溜りの残存を抑制することができる。
【0010】
更に、前記被着体を粘着テープに貼付する前に、前記液体中に超音波を照射して脱気処理するとよい。このような方法によれば、液体中での被着体の接着面及び粘着テープの粘着面に微量存在する空気を除去することができ、前記空気溜りの抑制をより確実に行うことができる。
また、本発明は、液体中で、半導体ウェハに粘着テープが貼付された基台を貼付するという方法を採っている。
【0011】
なお、本明細書において、「水」とは、純水を含む通常の水の他、他の水溶液或いは粘着性能に支障をきたすことのない液体をも含む広い概念として用いられる。
【0012】
【実施例】
以下、本発明の実施例を図面を参照しながら説明する。
【0013】
図1には、本実施例における貼付方法が適用される貼付装置の概念図が示されている。この図において、貼付装置10は、水槽12と、この水槽12の底壁12Aに配置される貼付テーブル14と、水槽12の側壁12Bに配置される超音波発生装置16と、水槽12とは別に設けられるUV発生装置17とを備えて構成されている。
【0014】
前記水槽12の底壁12Aには、注水口19及び排水口20が設けられており、これらを通じて、水Wが、図示省略した貯水タンクから水槽12に給排水されるようになっている。なお、ここで、水槽12内の水Wは、一回の貼付作業毎に交換してもよいし、使用後の水Wを一旦水槽12から抜き出した後、フィルター等によって水中のゴミ等を除去し、再び水槽12に供給するという循環炉過を行ってもよい。また、前記貼付テーブル14の上面側は、粘着テープ22が貼付された半導体ウェハ24(以下、「粘着材25」という)を設置することができるようになっている。更に、超音波発生装置16は、水槽12内において、粘着材25にガラス板等の硬質材料からなる基台26(被着体)を貼付する前に、水槽12内の水Wに所定の周波数の超音波を照射して、水中での基台26及び粘着材25の粘着面22Aに付着する空気の脱気処理を可能に設けられている。また、UV発生装置17は、粘着材25に基台26を貼付する前に、当該基台26の接着面にUV光を照射可能に設けられ、これによって、基台26に付着した油等の有機物を分解除去し、基台26の接着面の親水性を増大することができるようにしている。ここで、粘着テープ22としては、粘着面が両面に形成された両面粘着テープが用いられ、特に限定されるものではないが、例えば、ポリエチレンテレフタレート、ポリエチレン等からなる基材の両面に粘着剤層が形成された粘着テープ又は基材を有しない粘着剤のみからなる粘着テープが用いられる。
【0015】
以上の構成の貼付装置10を用い、以下の方法によって、粘着材25が基台26に貼付される。
【0016】
すなわち、予め、公知の方法によって、半導体ウェハ24の回路形成面に粘着テープ22を貼付し、図1に示されるように、粘着材25を形成する半導体ウェハ24と反対側に位置する粘着テープ22の粘着面22Aを表出させた状態で、当該粘着面22Aを上向きにして、粘着材25を貼付テーブル14の上面側の所定位置に図示しない移載装置にて移載設置する。これと前後して、超音波発生装置16によって、水槽12中の水Wに超音波を照射して脱気処理を行う。また、これとともに、搬送アーム27に取り付けられて図示しない真空発生装置により吸着制御されているバキュームグリッド28に保持されたまま所定位置で待機している基台26の接着面に、UV発生装置17にてUV光を照射し、基台26の親水性を増大させる。その後、図2に示されるように、搬送アーム27を移動することによって、バキュームグリッド28に吸着されている基台26を、予め水槽12内に設置されている粘着材25の近傍に移動させ、基台26の一端26A(図2では左端)を貼付テーブル14上の粘着材25の粘着面22Aに当接させる一方、基台26の右端26Bを前記粘着面22Aから離間させて、基台26を粘着テープ22に対して傾斜配置する。そして、バキュームグリット28に吸着保持される基台26を、搬送アーム27の動作によって、基台26の一端26Aから他端26B(図2では右端)に向って次第に粘着材25に接近させ、基台26と粘着材25の粘着面22Aの間にある水Wを追い出しながら押圧し、図3に示されるように、基台26を粘着材25に貼付する。
【0017】
以上の動作により、粘着テープ22を介して基台26が接着された粘着材25は、搬送アーム27のバキュームグリット28に吸着保持され、図4に示されるように、水槽12から取り出され、図5に示されるように、一対のプレスローラ30により更に加圧されることにより、粘着面22Aと基台26の接着面の水切を行う。その後、粘着テープ22を介して基台26が接着された粘着材25は、所定の乾燥工程によって表面乾燥がなされ、半導体ウェハ24の厚みを調整する切削工程に移送される。なお、本実施例では、基台26をバキュームグリット28で保持しているが、本発明はこれに限定されるものではなく、基台26を保持可能な限りにおいて、他の構成の保持手段を採用してもよい。
【0018】
従って、このような実施例によれば、粘着材25を、硬質で平滑性の高いガラス板等の基台26に粘着テープ22を介して接着固定することにより、後工程作業となる半導体ウェハ24の切削加工において、極めて薄い50μm以下の半導体ウェハ24の加工も可能となる他、その切削に付随する作業を簡易に行うことができる。また、脱気処理した水中で、親水性が増大された基台26に粘着テープ22を貼付するため、基台26の接着面と粘着材25の粘着面22Aの間に空気を混入させることなく、粘着材25を基台26に貼付することができる。
【0019】
本実施例では、両面粘着テープ22で半導体ウェハ24に予め貼着した例で説明したが、基台26側に粘着テープ22等を予め貼着しておいても良い。
【0020】
なお、本発明は、前記実施例の方法に限定されることはなく、水中で被着体に粘着材を貼付する限りにおいて、種々の変更が可能である。
【0021】
【発明の効果】
以上説明したように、本発明によれば、液体中で被着体に粘着材を貼付したから、粘着材を貼付する際の空気の混入を防止することができ、それら接着面の間の空気溜りの発生を抑制することができる。
【0022】
また、前記被着体の一端を前記粘着材の粘着面に当接させる一方、その他端を前記粘着面から離間させて、前記被着体を前記粘着材に対して傾斜配置した後、その被着体を、当該被着体の一端から他端に向って次第に前記粘着材に接近させることで、前記被着体と粘着材の間の液体を追い出しながら、前記被着体を粘着材に貼付したから、被着体と粘着材との間の空気の混入を一層確実に防止することができる。
【0023】
更に、前記被着体を粘着材に貼付する前に、前記被着体の親水性を増大させたから、被着体の水はじきを一層低減することができ、被着体を粘着材に貼付した後に残存する空気溜りの抑制を一層確実に行うことができる。
【0024】
また、前記液体中に超音波を照射して脱気処理したから、液体中に微量存在する空気を除去することができ、前記空気溜りの抑制をより確実に行うことができる。
【0025】
更に、ワックスを被着体に塗布して当該被着体に半導体ウェハ等の切削対象物を接着した上で、この切削対象物を切削してその厚さを調整する従来の方法と異なり、本発明は、前記ワックスの代わりに粘着テープを被着体に貼付することとしたから、前記切削対象物の切削精度を向上させることができるとともに、その切削に付随する作業を簡易に行うことができる。
【図面の簡単な説明】
【図1】本発明に係る粘着材の貼付方法に適用される貼付装置の概念図。
【図2】図1の貼付装置に設置された粘着材に基台を貼付する方法を説明する概念図。
【図3】粘着材に基台が貼付された状態を示す概念図。
【図4】粘着テープを介して基台が接着された半導体ウェハが移送される状態を示す概念図。
【図5】図1の貼付装置から移送された半導体ウェハ及び基台をプレスする工程を説明する概念図。
【符号の説明】
22 粘着テープ
22A 粘着面
24 半導体ウェハ
25 粘着材
26 基台(被着体)
26A 一端
26B 他端
W 水
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an adhesive material sticking method, and more particularly, to an adhesive material sticking method suitable for manufacturing an extremely thin semiconductor wafer.
[0002]
[Prior art]
For example, a semiconductor wafer such as silicon is manufactured in a large-diameter disk shape, a circuit pattern is formed on the surface thereof, and then the back surface side is cut. The thickness of the semiconductor wafer is determined according to the thickness of the semiconductor chip obtained from the semiconductor wafer, but conventionally, the thickness is generally 400 μm to 300 μm. However, in recent years, with the spread of IC cards and the like, the present situation is that there is a demand for a semiconductor chip having a thickness of about 100 μm to 50 μm, and in some cases about 30 μm.
[0003]
As a method for making the semiconductor wafer extremely thin, a hard base made of a glass plate or the like is used, and after applying wax on the upper surface side, a semiconductor wafer with the circuit surface facing the base surface side is placed, A method of cutting the back side of the semiconductor wafer is known.
[0004]
[Problems to be solved by the invention]
However, in the cutting method using the wax, it is difficult to apply the wax to a uniform thickness, and the thickness accuracy required when manufacturing an extremely thin IC chip of about 50 μm is sufficient. Inconvenience that it cannot be secured. In addition to cleaning the wafer with an organic solvent after cutting the wafer, when dicing the semiconductor wafer after cutting into semiconductor chips for each unit, after removing the wax, add a new dicing tape to the semiconductor wafer. Affixing is also necessary, and there is a disadvantage that it complicates the work process. Further, it is difficult to remove the wax from the semiconductor wafer, and there is a risk of destroying a product such as the semiconductor wafer. Therefore, even the cutting method using the wax is not necessarily suitable for the production of an ultra-thin semiconductor wafer that is required recently.
[0005]
OBJECT OF THE INVENTION
The present invention has been devised by paying attention to such inconveniences, and its main purpose is to improve the cutting accuracy of a cutting object such as a semiconductor wafer and to easily perform the work associated with the cutting. It is in providing the sticking method of the adhesive material which can be performed.
[0006]
Another object of the present invention is that the adhesive material cannot be applied to the adherend using the bending of the adhesive material, that is, for example, an adherend with low flexibility is applied to a semiconductor wafer or the like. An object of the present invention is to provide a method for sticking an adhesive material that can prevent air from being mixed even when sticking to an adhesive surface of an adhesive tape.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the present invention employs a method of attaching a semiconductor wafer having an adhesive tape attached to an adherend in a liquid. According to such a method, the adherend is affixed to the adhesive tape in a liquid having a low air content, and in this case, air is prevented from being mixed between the adherend and the adhesive tape. And generation of air pockets between them can be suppressed.
[0008]
In the present invention, one end of the adherend is brought into contact with the adhesive surface of the adhesive tape , while the other end is separated from the adhesive surface, and the adherend is inclined with respect to the adhesive tape , the adherend, by approaching progressively the adhesive tape toward the other end from one end of the adherend, while removing the liquid between the adhesive tape and the adherend, the adhesive tape the adherend It is preferable to adopt a method of sticking to. By doing in this way, mixing of the air between a to-be-adhered body and an adhesive tape can be prevented more reliably.
[0009]
Moreover, before sticking the said adherend to an adhesive tape , the method of irradiating UV light and including the process of increasing the hydrophilicity to the said adherend can also be employ | adopted. As a result, water repellency of the adherend can be further reduced, and after adhering the adherend to the adhesive tape , it is possible to suppress residual air remaining on the adherend surface of the adherend and the adhesive surface of the adhesive material. it can.
[0010]
Further, before the adherend is affixed to the adhesive tape, the liquid may be deaerated by irradiating ultrasonic waves. According to such a method, it is possible to remove a small amount of air on the adhesion surface of the adherend and the pressure-sensitive adhesive surface of the pressure-sensitive adhesive tape in the liquid, and it is possible to more reliably suppress the air accumulation.
In addition, the present invention employs a method in which a base having an adhesive tape attached to a semiconductor wafer is attached in a liquid.
[0011]
In the present specification, “water” is used as a broad concept including normal water including pure water, as well as other aqueous solutions or liquids that do not hinder the adhesive performance.
[0012]
【Example】
Embodiments of the present invention will be described below with reference to the drawings.
[0013]
FIG. 1 shows a conceptual diagram of a sticking apparatus to which the sticking method in this embodiment is applied. In this figure, the affixing device 10 is separate from the aquarium 12, the affixing table 14 disposed on the bottom wall 12A of the aquarium 12, the ultrasonic generator 16 disposed on the side wall 12B of the aquarium 12, and the aquarium 12. And a UV generator 17 provided.
[0014]
The bottom wall 12A of the water tank 12 is provided with a water injection port 19 and a water discharge port 20, through which water W is supplied and drained from a water storage tank (not shown) to the water tank 12. Here, the water W in the water tank 12 may be replaced for each pasting operation. After the used water W is once extracted from the water tank 12, dust in the water is removed by a filter or the like. And you may perform the circulation furnace over of supplying to the water tank 12 again. Further, a semiconductor wafer 24 (hereinafter referred to as “adhesive material 25”) to which an adhesive tape 22 is attached can be installed on the upper surface side of the application table 14. Furthermore, before the ultrasonic generator 16 affixes a base 26 (adhered body) made of a hard material such as a glass plate to the adhesive 25 in the water tank 12, the ultrasonic generator 16 has a predetermined frequency in the water W in the water tank 12. Is provided so that the air attached to the base 26 and the adhesive surface 22A of the adhesive material 25 in water can be deaerated. Further, the UV generator 17 is provided so that UV light can be applied to the adhesive surface of the base 26 before the base 26 is attached to the adhesive material 25. The organic matter is decomposed and removed so that the hydrophilicity of the bonding surface of the base 26 can be increased. Here, as the adhesive tape 22, a double-sided adhesive tape having an adhesive surface formed on both sides is used, and is not particularly limited. For example, an adhesive layer is formed on both sides of a base material made of polyethylene terephthalate, polyethylene or the like. A pressure-sensitive adhesive tape formed of or a pressure-sensitive adhesive tape composed only of a pressure-sensitive adhesive having no base material is used.
[0015]
The adhesive material 25 is affixed to the base 26 by the following method using the affixing device 10 having the above configuration.
[0016]
That is, the adhesive tape 22 is pasted on the circuit forming surface of the semiconductor wafer 24 by a known method in advance, and the adhesive tape 22 located on the opposite side of the semiconductor wafer 24 forming the adhesive material 25 as shown in FIG. With the adhesive surface 22A exposed, the adhesive surface 22A is faced upward, and the adhesive material 25 is transferred and installed at a predetermined position on the upper surface side of the sticking table 14 by a transfer device (not shown). Before and after this, the ultrasonic generator 16 irradiates the water W in the water tank 12 with ultrasonic waves to perform a deaeration process. At the same time, the UV generator 17 is attached to the adhesive surface of the base 26 that is attached to the transport arm 27 and is held at a predetermined position while being held by the vacuum grid 28 that is suction controlled by a vacuum generator (not shown). Irradiate UV light to increase the hydrophilicity of the base 26. Thereafter, as shown in FIG. 2, by moving the transfer arm 27, the base 26 that is adsorbed to the vacuum grid 28 is moved to the vicinity of the adhesive material 25 previously installed in the water tank 12, One end 26A (left end in FIG. 2) of the base 26 is brought into contact with the adhesive surface 22A of the adhesive material 25 on the sticking table 14, while the right end 26B of the base 26 is separated from the adhesive surface 22A. Is inclined with respect to the adhesive tape 22. Then, the base 26 adsorbed and held by the vacuum grit 28 is gradually moved closer to the adhesive material 25 from one end 26A of the base 26 toward the other end 26B (right end in FIG. 2) by the operation of the transport arm 27. The water 26 located between the base 26 and the adhesive surface 22A of the adhesive material 25 is pressed while being expelled, and the base 26 is attached to the adhesive material 25 as shown in FIG.
[0017]
With the above operation, the adhesive material 25 to which the base 26 is bonded via the adhesive tape 22 is adsorbed and held by the vacuum grit 28 of the transfer arm 27 and taken out from the water tank 12 as shown in FIG. As shown in FIG. 5, the adhesive surface 22 </ b> A and the adhesive surface of the base 26 are drained by being further pressurized by the pair of press rollers 30. Thereafter, the pressure-sensitive adhesive material 25 to which the base 26 is bonded via the pressure-sensitive adhesive tape 22 is subjected to surface drying by a predetermined drying process, and is transferred to a cutting process for adjusting the thickness of the semiconductor wafer 24. In this embodiment, the base 26 is held by the vacuum grit 28. However, the present invention is not limited to this, and as long as the base 26 can be held, holding means having other configurations can be used. It may be adopted.
[0018]
Therefore, according to such an embodiment, the adhesive material 25 is bonded and fixed to the base 26 such as a hard and highly smooth glass plate or the like via the adhesive tape 22, so that the semiconductor wafer 24 which is a post-process work. In this cutting process, an extremely thin semiconductor wafer 24 having a thickness of 50 μm or less can be processed, and operations associated with the cutting can be easily performed. Further, since the adhesive tape 22 is applied to the base 26 having increased hydrophilicity in the deaerated water, air is not mixed between the adhesive surface of the base 26 and the adhesive surface 22A of the adhesive material 25. The adhesive material 25 can be attached to the base 26.
[0019]
In the present embodiment, the example in which the double-sided adhesive tape 22 is attached in advance to the semiconductor wafer 24 has been described. However, the adhesive tape 22 or the like may be attached in advance to the base 26 side.
[0020]
In addition, this invention is not limited to the method of the said Example, A various change is possible as long as an adhesive material is affixed on a to-be-adhered body in water.
[0021]
【The invention's effect】
As described above, according to the present invention, since the adhesive material is applied to the adherend in the liquid, it is possible to prevent air from being mixed when the adhesive material is applied, and the air between these adhesive surfaces. Generation of accumulation can be suppressed.
[0022]
In addition, one end of the adherend is brought into contact with the adhesive surface of the adhesive material, while the other end is separated from the adhesive surface, and the adherend is disposed to be inclined with respect to the adhesive material. By adhering the adherend to the adhesive material gradually from one end to the other end of the adherend, the adherend is adhered to the adhesive material while expelling the liquid between the adherend and the adhesive material. Therefore, mixing of air between the adherend and the adhesive material can be more reliably prevented.
[0023]
Furthermore, since the hydrophilicity of the adherend was increased before the adherend was affixed to the adhesive material, water repelling of the adherend could be further reduced, and the adherend was affixed to the adhesive material. It is possible to more reliably suppress the air remaining afterward.
[0024]
In addition, since the liquid is degassed by irradiating ultrasonic waves, the air present in a minute amount can be removed, and the accumulation of air can be more reliably suppressed.
[0025]
Further, unlike the conventional method in which wax is applied to an adherend and a cutting object such as a semiconductor wafer is adhered to the adherend, and then the cutting object is cut to adjust its thickness. In the invention, since the adhesive tape is attached to the adherend instead of the wax, the cutting accuracy of the cutting object can be improved, and the operation associated with the cutting can be easily performed. .
[Brief description of the drawings]
FIG. 1 is a conceptual diagram of a sticking apparatus applied to a method for sticking an adhesive material according to the present invention.
FIG. 2 is a conceptual diagram illustrating a method of attaching a base to an adhesive material installed in the attaching device of FIG.
FIG. 3 is a conceptual diagram showing a state where a base is attached to an adhesive material.
FIG. 4 is a conceptual diagram showing a state in which a semiconductor wafer having a base bonded thereto is transferred via an adhesive tape.
5 is a conceptual diagram illustrating a process of pressing a semiconductor wafer and a base transferred from the sticking apparatus of FIG.
[Explanation of symbols]
22 Adhesive Tape 22A Adhesive Surface 24 Semiconductor Wafer 25 Adhesive Material 26 Base (Substrate)
26A One end 26B The other end W Water

Claims (5)

液体中で、被着体に粘着テープが貼付された半導体ウェハを貼付することを特徴とする粘着材の貼付方法。A method for applying an adhesive material, comprising: attaching a semiconductor wafer having an adhesive tape attached to an adherend in a liquid. 前記被着体の一端を前記粘着テープの粘着面に当接させる一方、その他端を前記粘着面から離間させて、前記被着体を前記粘着テープに対して傾斜配置した後、その被着体を、当該被着体の一端から他端に向って次第に前記粘着テープに接近させることで、前記被着体と粘着テープの間の液体を追い出しながら、前記被着体を粘着テープに貼付することを特徴とする請求項1記載の粘着材の貼付方法。One end of the adherend is brought into contact with the pressure-sensitive adhesive surface of the pressure-sensitive adhesive tape , and the other end is separated from the pressure-sensitive adhesive surface, and the adherend is inclined with respect to the pressure-sensitive adhesive tape . the, by close to one end progressively the adhesive tape toward the other end from the adherend, while removing the liquid between the adhesive tape and the adherend, to affixing the adherend to the adhesive tape The method for sticking an adhesive material according to claim 1. 前記被着体を粘着テープに貼付する前に、UV光を照射して前記被着体に親水性を増大する工程を含むことを特徴とする請求項1又は2記載の粘着材の貼付方法。The method for applying an adhesive material according to claim 1 or 2, further comprising a step of increasing hydrophilicity of the adherend by irradiating UV light before applying the adherend to the adhesive tape . 前記被着体を粘着テープに貼付する前に、前記液体中に超音波を照射して脱気処理することを特徴とする請求項1又は2記載の粘着材の貼付方法。3. The method for sticking an adhesive material according to claim 1 , wherein a deaeration treatment is performed by irradiating the liquid with an ultrasonic wave before the adherend is attached to the adhesive tape . 液体中で、半導体ウェハに粘着テープが貼付された基台を貼付することを特徴とする粘着材の貼付方法。A sticking method for an adhesive material, comprising sticking a base having an adhesive tape attached to a semiconductor wafer in a liquid.
JP15248699A 1999-05-31 1999-05-31 Adhesive sticking method Expired - Lifetime JP4484982B2 (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN106356322A (en) * 2016-10-20 2017-01-25 北方电子研究院安徽有限公司 Wafer corrosion device and corrosion method

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JP4537603B2 (en) * 2001-03-09 2010-09-01 株式会社東芝 Manufacturing method of semiconductor device
JP4633515B2 (en) * 2005-03-30 2011-02-16 芝浦メカトロニクス株式会社 Bonding device and bonding method
JP5982650B2 (en) * 2013-12-06 2016-08-31 パナソニックIpマネジメント株式会社 Wafer peeling device
US9704820B1 (en) * 2016-02-26 2017-07-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor manufacturing method and associated semiconductor manufacturing system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106356322A (en) * 2016-10-20 2017-01-25 北方电子研究院安徽有限公司 Wafer corrosion device and corrosion method

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