JP2013162096A - Semiconductor chip manufacturing method and laminate device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce a clearance around a bottom of each bump at the time of a polishing process.SOLUTION: A semiconductor chip manufacturing method comprises: a preparation process of preparing a semiconductor wafer 10 on which solder bumps 28 are formed on a wafer surface 10A; a stacking process of stacking on the wafer surface 10A before a viscous flowing film 32 hardens, the viscous flowing film 32 having viscosity and flowability and adhering to the wafer surface 10A, an elastic adhesive film 34 which adheres to the viscous flowing film 32, and a tape base material 36 to which the adhesive film 34 adheres; a polishing process of polishing a back face 10B of the semiconductor wafer 10 with holding the tape base material 36 before the viscous flowing film 32 hardens; a peeling process of peeling off the tape base material 36 together with the adhesive film 34 from the wafer surface 10A; and a cutting process of cutting the semiconductor wafer 10 along a thickness direction to obtain a plurality of semiconductor chips.

Description

  The technology disclosed in the present application relates to a semiconductor chip manufacturing method and a laminating apparatus.

  In a method for manufacturing a semiconductor chip, for example, a polishing process for polishing a back surface of a wafer for the purpose of thinning the semiconductor chip is performed before a cutting process for cutting a wafer on which solder bumps are formed to obtain a plurality of semiconductor chips. ing.

  In this polishing process, when the wafer is placed on the polishing base, the surface of the wafer on which the solder bump is formed is brought into contact with the base. Has been done.

Conventionally, as a protection process, there is known a method in which an adhesive film is laminated on the surface of a wafer on which solder bumps are formed and then the adhesive film is cured.
As a protection process, there is also known a method in which an adhesive film that has been repeatedly applied and cured and a supporting adhesive film that adheres the adhesive film are laminated on the surface of a wafer on which solder bumps are formed.

JP-A-5-55278 JP 2011-176069 A JP 2005-150523 A

  However, only by laminating an adhesive film on the surface of the wafer in the protection process, the adhesive film is around the base of the solder bump (the corner formed between the solder bump and the wafer, hereinafter referred to as “bump base”). Don't get in. Even if the supporting adhesive film is laminated on the adhesive film, the adhesive film on the surface of the wafer is cured, so that the elastic body has no fluidity. For this reason, even if the adhesive film is elastically deformed by the load applied when the supporting adhesive film is laminated, the adhesive film does not enter the base of the bump in an attempt to return to the shape before the load is applied.

  Similarly, before the polishing process, the adhesive film is hardened and becomes an elastic body having no fluidity. Therefore, even if the adhesive film is elastically deformed by the load applied during the polishing process, the adhesive film penetrates to the base of the bump. Absent.

  As a result, a gap called a void is formed around the base of the bump during the polishing process. If the back surface of the wafer continues to be polished with this gap formed, the gap is transferred to the back surface of the wafer, so that a dimple called a dimple is easily formed, leading to wafer cracking.

  An object of the disclosed technique of the present application is to provide a semiconductor chip manufacturing method and a laminating apparatus that can reduce a gap around a bump base in a polishing process.

  In order to solve the above-described problems, the semiconductor chip manufacturing method disclosed in the present application includes a protection process for protecting the surface of the wafer on which the solder bumps are formed, particularly the solder bumps. In the protection process, the semiconductor chip manufacturing method includes a viscous fluid film that has viscosity and fluidity on the surface of the wafer on which the solder bumps are formed, and an elastic adhesive film that adheres to the viscous fluid film, And the tape base material with which the adhesive film was adhere | attached is laminated | stacked before hardening of a viscous fluidized film. After this protection process, the semiconductor chip manufacturing method includes a polishing process for holding the tape base material and polishing the back surface of the wafer, a peeling process for peeling the tape base material from the wafer surface together with an adhesive film, and a thickness direction of the wafer. And a cutting step of obtaining a plurality of semiconductor chips.

  In the semiconductor chip manufacturing method disclosed in the present application, the viscous fluid film flows under the load applied when laminating the adhesive film or the load applied during the polishing process and enters the base of the bump. Further, when the viscous fluid film enters, it adheres to the solder bump due to its viscosity, and the state where it enters the base of the bump is maintained. As a result, according to the method for manufacturing a semiconductor chip disclosed in the present application, it is possible to reduce the gap around the base of the bump in the polishing process as compared with the case where an adhesive film is laminated on the surface of the wafer and cured.

It is a perspective view of the semiconductor wafer used with the manufacturing method of the semiconductor chip concerning a 1st embodiment. It is AA arrow sectional drawing of the semiconductor wafer shown in FIG. It is a figure which shows the protection process in the manufacturing method of the semiconductor chip which concerns on 1st and 2nd embodiment. It is a figure which shows the specific example of the protection process shown in FIG. 3, (A) shows the application | coating process in a protection process, (B) And (C) is a figure which shows the lamination process in a protection process. It is the schematic of the laminating apparatus used with the manufacturing method of the semiconductor chip which concerns on 1st Embodiment. It is a figure which shows the grinding | polishing process in the manufacturing method of the semiconductor chip which concerns on 1st Embodiment. (A) shows the peeling process in the semiconductor chip manufacturing method according to the first embodiment, (B) shows the laser grouping process in the semiconductor chip manufacturing method according to the first embodiment, and (C) shows the first embodiment. The cutting process in the manufacturing method of the semiconductor chip concerning a form is shown. It is sectional drawing of the semiconductor chip obtained by the manufacturing method of the semiconductor chip which concerns on 1st Embodiment. It is a figure which shows the specific example of the protection process shown in FIG. 3, (A) shows the application | coating process in a protection process, (B) And (C) is a figure which shows the lamination process in a protection process. It is the schematic of the laminating apparatus used with the manufacturing method of the semiconductor chip which concerns on 2nd Embodiment. It is a figure which shows the manufacturing method of the semiconductor chip which concerns on the reference examples 1 and 2, (A) is a figure which shows a protection process, (B) is a figure which shows a grinding | polishing process. (A) is a figure which shows adhesive residue, (B) is a figure which shows bump peeling.

  Hereinafter, a plurality of embodiments of technology disclosed in the present application will be described in detail with reference to the drawings.

<First Embodiment>
A semiconductor chip manufacturing method according to the first embodiment (hereinafter referred to as “manufacturing method of the present embodiment”) cuts a semiconductor wafer on which solder bumps are formed along the thickness direction to form a plurality of semiconductor chips. The method to get is adopted.

(Preparation process)
First, the manufacturing method of the present embodiment includes a preparation process for preparing a semiconductor wafer 10 as shown in FIG. In the semiconductor wafer 10 prepared in this preparation step, semiconductor chip formation regions (hereinafter referred to as “chip formation regions 12”) are arranged in a matrix in the row direction and the column direction. A scribe region 14 (dicing line) formed in a lattice shape is disposed around each chip formation region 12. The scribe region 14 is cut in a cutting step described later, whereby a semiconductor chip is obtained from each chip forming region 12.

  As shown in FIG. 2, the semiconductor wafer 10 includes a semiconductor substrate 16, a low dielectric constant (Low-k) film 18, an integrated circuit 20, and a sealing film 22 stacked in the wafer thickness T direction. Has a laminated structure.

The semiconductor substrate 16 has a flat plate shape, and for example, a silicon substrate is used. A low dielectric constant film 18 is laminated on one surface (upper surface in the drawing) of the semiconductor substrate 16 in the wafer thickness T direction. The low dielectric constant film 18 is made of an insulating material having a relative dielectric constant of 3.0 or less and a glass transition temperature of 400 ° C. or more, for example, a polysiloxane material. The thickness of the low dielectric constant film 18 is constant in the chip formation region 12, and is, for example, half or more thinner than the thickness in the chip formation region 12 in the scribe region 14.
On the surface in the stacking direction L (upper surface in the figure) of the low dielectric constant film 18 having a constant thickness, that is, on the upper surface of the low dielectric constant film 18 in the chip formation region 12, for example, a transistor, resistor, capacitor, etc. The integrated circuit 20 having a constant thickness and having a constant thickness is stacked. A sealing film 22 is stacked on the surface in the stacking direction L of the integrated circuit 20 (upper surface in the drawing) and the surface in the stacking direction L of the low dielectric constant film 18 in the scribe region 14. For example, a polyimide resin is used for the sealing film 22.

  Inside the sealing film 22, a connection pad portion 24 that is in contact with and electrically connected to the integrated circuit 20 is formed. A wiring 26 formed in the sealing film 22 and having a substantially T-shaped cross section in the stacking direction L is in contact with and electrically connected to the connection pad portion 24. Solder bumps 28 serving as external connection electrodes are in contact with and electrically connected to the wiring 26. As the solder bumps 28, solder balls having a substantially ball shape are used. Further, the solder bump 28 protrudes from the surface of the sealing film 22 in the stacking direction L, for example, a height of 4/5 of the height H. The surface in the stacking direction L of the sealing film 22 is a wafer surface 10A that is one surface of the semiconductor wafer 10 in the wafer thickness T direction, and this wafer surface 10A has an uneven shape due to the protruding solder bumps 28. It has become. Also, a corner is formed between the outer peripheral surface 28A of the solder bump 28 protruding from the wafer surface 10A and the wafer surface 10A, and this corner is referred to as a bump root 30.

(Protection process)
After the preparation step, as shown in FIG. 3, the manufacturing method according to the present embodiment has a viscous fluid film 32, an adhesive film 34, and a tape on the wafer surface 10A on which the solder bumps 28 are formed. There is a protection step of laminating the base material 36 before the viscous fluid film 32 is cured. In the manufacturing method of the present embodiment, the viscous fluid film has such a thickness that the position lower than the center O of the height H of the solder bump 28 becomes the surface 32A (surface in the stacking direction L) of the viscous fluid film 32 in the protection process. 32 is laminated, and the adhesive film 34 is laminated with a thickness equal to or higher than the height H of the solder bump 28. At this time, the viscous fluid film 32 remains in a fillet shape on the outer peripheral surface 28 </ b> A on the side of the stacking direction L from the center O of the solder bump 28 due to the viscosity and the surface tension of the solder bump 28.

The viscous fluid film 32 is a low-viscosity film that is sufficiently softer (lower in viscosity) than the adhesive film 34 and has a viscosity at room temperature of 25 ° C. of 100 mPa · s or less, for example, 45 mPa · s or more and 65 mPa · s or less. That is, the viscous fluid film 32 has fluidity as well as viscosity, and adheres to the wafer surface 10A when laminated on the wafer surface 10A.
As the material of the viscous fluid film 32, a material having water solubility in addition to viscosity and fluidity is preferably used. Examples of the material having all the above properties include a material in which the main component is water and the subcomponent is polyvinyl alcohol, and a material in which the main component is water and the subcomponent is propylene glycol monomethyl ether. Other materials include methylcellulose, starch paste, gum arabic paste and the like. Further, the above materials may contain an additive such as citric acid. The “main component” refers to a component that occupies 50% or more of the volume of the entire membrane, and is preferably 80% or more, particularly 90% or more from the viewpoint of improving the fluidity and water solubility of the membrane.

  The adhesive film 34 is a film that is sufficiently harder (higher in viscosity) than the viscous fluid film 32 and has a viscosity of 1 Pa · s or more, for example, 500 Pa · s or more and 1000 Pa · s or less at a room temperature of 25 ° C. That is, the adhesive film 34 is an elastic body having a viscosity that has almost no fluidity than the viscous fluid film 32 and is adhered to the viscous fluid film 32 when laminated on the wafer surface 10A. As the material of the adhesive film 34, for example, an acrylic adhesive, a rubber adhesive, or the like is used.

  The tape base material 36 is originally adhered to the adhesive film 34 before being laminated on the wafer surface 10A, and the adhesive film 34 and the like are collectively referred to as a BG (back grind) tape 38. As a material of the tape base material 36, for example, polyethylene terephthalate or the like is used.

The above protection process has a series of processes as shown in FIG. 4 in this embodiment.
First, as shown in FIG. 4A, the protection process is more water-soluble than the surface of the BG tape 38 on the side of the adhesive film 34 (the surface 34A of the adhesive film 34) that is later laminated on the wafer surface 10A. A coating step of forming the viscous fluid film 32 by applying the above material.
Next, as shown in FIGS. 4 (B) and 4 (C), the protection process includes a surface 34A of the adhesive film 34 adhered to the tape substrate 36 before the viscous fluid film 32 is cured after the application process. And a wafer surface 10A are laminated with a viscous fluid film 32 interposed therebetween.

These coating process and laminating process may be performed manually by humans individually, or may be performed by individual devices (dispenser, pasting device, etc.). In the manufacturing method of this embodiment, FIG. This is performed by a laminating apparatus 40 as shown.
The laminating apparatus 40 is an apparatus in which functions of a dispenser and a pasting apparatus are integrated. The laminating apparatus 40 includes a supply unit 42 for the BG tape 38, a coating unit 44 for the viscous fluid film 32, a laminating unit 46 for the semiconductor wafer 10 and the BG tape 38, and a control unit 48.

  The supply unit 42 is provided with an unwinding roller 50 for unwinding the wound BG tape 38. A supply roller 52 for supplying the BG tape 38 to the coating unit 44 is provided at the unwinding destination of the unwinding roller 50. Further, when the BG tape 38 is unwound between the supply roller 52 and the unwinding roller 50, the separator 38A covering the surface 34A of the adhesive film 34 of the BG tape 38 is peeled off from the BG tape 38. A separation conveying roller 54 that conveys the sheet while being conveyed is provided. A take-up roller 56 for winding the separator 38 </ b> A conveyed from the peeling conveyance roller 54 is provided at the conveyance destination of the peeling conveyance roller 54.

  The application unit 44 is provided with a tape base 58 that supports the BG tape 38 supplied from the supply roller 52. Above the tape base 58, a nozzle 60 is provided on the surface 34A of the adhesive film 34 of the supplied BG tape 38 to apply a water-soluble material in addition to viscosity and fluidity as the viscous fluid film 32. Yes. Further, an extending roller 62 for extending the viscous fluid film 32 is provided above the tape base 58 at the supply destination of the BG tape 38 rather than the nozzle 60. A supply roller 64 for supplying the BG tape 38 to the laminating unit 46 is provided at a supply destination of the BG tape 38 rather than the stretching roller 62.

  The laminating unit 46 is provided with a feed roller 66 that feeds the BG tape 38 supplied from the supply roller 64 to the outside of the laminating apparatus 40. Below the delivery roller 66 and the supply roller 64, a wafer base 68 that adsorbs the wafer back surface 10B of the semiconductor wafer 10 that is the surface opposite to the wafer surface 10A is provided. A pair of laminating rollers 72 that are in contact with and away from the wafer base 68 by, for example, an air cylinder 70 are provided above both ends of the wafer base 68. Each of the laminating rollers 72 approaches the wafer base 68 when the BG tape 38 is supplied, and the viscous fluid film 32 in which the surface 34A of the adhesive film 34 of the BG tape 38 and the wafer surface 10A are applied to the adhesive film 34. Is laminated with the viscous fluid film 32 interposed therebetween. After the lamination is finished, each laminating roller 72 is separated from the wafer base 68.

  The control unit 48 controls various members (driving of the air cylinder 70, rotational driving of various rollers, etc.) in the supply unit 42, the coating unit 44, the laminating unit 46, etc. via the data bus 48A.

  In the laminating apparatus 40 described above, the coating unit and the laminating unit 46 perform the coating process and the laminating process in the manufacturing method of the present embodiment.

(Polishing process)
After the protection step, as shown in FIG. 6, the manufacturing method of the present embodiment is a polishing for holding the tape substrate 36 of the BG tape 38 and polishing the wafer back surface 10B before the viscous fluid film 32 is cured. It has a process. Specifically, in the manufacturing method of the present embodiment, in the polishing process, after the tape base material 36 is sucked and held by the chuck table 74, the grindstone 78 and the chuck table 74 are rotated in the reverse direction with the grindstone 78 applied to the wafer back surface 10B. The wafer back surface 10B is then polished.

(Peeling process)
After the polishing step, as shown in FIG. 7A, the manufacturing method of this embodiment peels off the BG tape 38, that is, the tape substrate 36 and the adhesive film 34 together with the wafer surface 10A (the upper viscous fluid film 32). A peeling step of peeling from the surface. This peeling step may be performed manually by a human or a so-called BG tape peeling device. During this peeling step, the viscous viscous fluid film 32 remains on the wafer surface 10A, but the viscous fluid film 32 around the bump root 30 has a fillet shape due to the surface tension of the solder bumps 28. .

(Mounting process)
After the peeling step, the manufacturing method of the present embodiment fixes the wafer back surface 10B of the semiconductor wafer 10 to a dicing frame (not shown) with a dicing tape interposed.

(Laser grouping process)
After the mounting step, as shown in FIG. 7B, the manufacturing method according to the present embodiment applies a short pulse laser L to the scribe region 14 of the semiconductor wafer 10 from the viscous fluid film 32 side. A laser grouping process for removing the low dielectric constant film 18 is included.

(Cutting process)
After the laser grouping step, the manufacturing method of this embodiment includes a cutting step of cutting the semiconductor wafer 10 in the thickness T direction to obtain a plurality of semiconductor chips 80, as shown in FIG. 7C. .

  Specifically, in the manufacturing method of the present embodiment, in the cutting step, the semiconductor wafer 10 is cut by using the dicing saw 82 from the viscous fluid film 32 side of the scribe region 14 while flowing the cutting water Wa. Divide into pieces. Thereafter, the manufacturing method of this embodiment irradiates the dicing tape with ultraviolet rays from the dicing frame side for the purpose of reducing the adhesive strength of the dicing tape. Then, in the manufacturing method of the present embodiment, the semiconductor chip 80 is peeled off from the dicing tape by being pushed up from the back surface of the semiconductor chip 80 through the dicing tape by a multipoint or single point needle, and picked up by the suction device.

  The semiconductor chip 80 obtained by the manufacturing method of this embodiment has a structure as shown in FIG. That is, the semiconductor substrate 16, the low dielectric constant film 18, the integrated circuit 20, and the sealing film 22 are stacked. On the surface 80A of the conductor chip, a pair of solder bumps 28 are formed which are electrically connected to the integrated circuit 20 with the connection pad portion 24 and the wiring 26 interposed therebetween. Further, the obtained semiconductor chip 80 is mounted (bonded) on a printed wiring board or the like, or stored in a tray or the like. In mounting the printed wiring board, for example, Au bumps provided on a foot pattern formed on the printed wiring board and the solder bumps 28 of the semiconductor chip 80 are alloy-connected by thermocompression bonding. The peripheral edge of the semiconductor chip 80 is sealed with an epoxy resin film.

  Next, in order to clarify the operational effects of the manufacturing method of the present embodiment, a semiconductor chip manufacturing method according to a reference example will be described. In the following reference examples, the semiconductor wafer 10, the adhesive film 34, the tape base material 36, and the like are denoted by the same reference numerals as those according to the first embodiment.

  In the semiconductor chip manufacturing method according to Reference Example 1 (hereinafter referred to as Reference Example Manufacturing Method), as shown in FIG. 11A, a BG tape is applied to the wafer surface 10A of the semiconductor wafer 10 on which the solder bumps 28 are formed. 38 has a protective process of laminating 38. That is, in the manufacturing method of Reference Example 1, the adhesive film 34 of the elastic body and the tape base material 36 bonded to the adhesive film 34 are stacked on the wafer surface 10A in the stacking direction L in the protection process. After the protection step, the manufacturing method of the reference example has a polishing step of holding the tape base material 36 of the BG tape 38 and polishing the wafer back surface 10B as shown in FIG. Specifically, the manufacturing method of Reference Example 1 is a polishing process. After the tape base material 36 is sucked and held by the chuck table 74, the grindstone 78 and the chuck table 74 are rotated in the reverse direction with the grindstone 78 applied to the wafer back surface 10B. The wafer back surface 10B is then polished.

  As in the above Reference Example 1, the elastic adhesive film 34 on the BG tape 38 does not enter the periphery 30 of the solder bumps 28 simply by laminating the BG tape 38 on the wafer surface 10 in the protection process. Further, even if the adhesive film 34 is elastically deformed by the load applied during the polishing process, the adhesive film 34 does not enter the bump root periphery 30 in an attempt to return to the shape before the load is applied.

  As a result, a gap 30 </ b> A called a void is formed around the bump root 30 during the polishing process. If the wafer back surface 10B is continuously polished in a state where the gap 30A is formed, the gap 30A is transferred to the wafer back surface 10B, so that a recess 30B called a dimple is easily formed, which leads to a wafer crack. Further, when polishing is performed while flowing water in the polishing process, there is a possibility that water containing polishing debris of the semiconductor wafer 10 soaks into the gap 30A and contaminates the semiconductor wafer 10.

  Next, the semiconductor chip manufacturing method according to Reference Example 2 has the same protection process as Reference Example 1 shown in FIG. However, it is assumed that the adhesive film 34 of the BG tape 38 is not an elastic body but has viscosity and fluidity like the viscous fluid film 32 of the present embodiment.

  In Reference Example 2 described above, the adhesive film 34 penetrates up to the bump root 30 by the load applied during the polishing process. However, in Reference Example 2, in the step of peeling the BG tape 38, the adhesive film 34 called adhesive residue is broken as shown in FIG. 12 (A), or the bump is peeled off as shown in FIG. 12 (B). There is a risk of pulling out of the solder bumps 28 called.

  Next, operations and effects of the manufacturing method of the above-described embodiment will be described.

  The manufacturing method of this embodiment is a protection process, in which a viscous fluid film 32 that adheres to the wafer surface 10A, an elastic adhesive film 34 that adheres to the viscous fluid film 32, and an adhesive film 34 are adhered to the wafer surface 10A. The tape base material 36 is laminated before the viscous fluid film 32 is cured. In this protection process, the viscous fluid film 32 is applied to the surface 34A of the adhesive film 34, and the surface 34A of the adhesive film 34 and the wafer surface 10A are bonded to the viscous fluid film 32 before the viscous fluid film 32 is cured. It has a laminating process of interposing and laminating.

Therefore, according to the manufacturing method of the present embodiment, when the adhesive film 34 is laminated, that is, when the surface 34A of the adhesive film 34 and the wafer surface 10A are laminated, the viscous fluid film 32 interposed therebetween is cured. (See FIG. 3 and FIG. 4). If the viscous fluid film 32 is not cured, the viscous fluid film 32 has fluidity. Therefore, the viscous fluid film 32 flows under the load applied during lamination and enters the bump root 30. Further, when the viscous fluid film 32 enters, the viscous fluid film 32 adheres to the solder bump 28 due to its viscosity (adhesive force), and the state where the viscous fluid film 32 enters the bump root 30 is maintained.
As a result, according to the manufacturing method of the present embodiment, the gap 30A around the bump base in the polishing process is made smaller than in the case where the elastic adhesive film 34 is laminated on the wafer surface 10A as in Reference Example 1. (See FIGS. 4 and 11).

  Moreover, the manufacturing method of this embodiment is a peeling process, and peels the tape base material 36 from the wafer surface 10 </ b> A together with the adhesive film 34. At this time, since the viscous fluid film 32 remains on the wafer surface 10A, the catching force between the adhesive film 34 and the solder bump 28 is reduced, and the adhesive film 34 of the BG tape 38 is laminated as in Reference Example 2. Compared to the case, the pump peeling hardly occurs.

  Further, in the manufacturing method of the present embodiment, the wafer back surface 10B is polished before the viscous fluid film 32 is cured in the polishing process. Therefore, even when the viscous fluid film 32 is insufficiently inserted around the bump root 30 in the lamination process, the viscous fluid film 32 flows with a load applied during the polishing process. As a result, the excessive amount of the viscous fluid film 32 on the wafer surface 10A is removed from the end face of the semiconductor wafer 10, and the bump roots 30 are filled in a fillet shape. As a result, according to the manufacturing method of the present embodiment, it is possible to eliminate the gap 30A around the bump base during the polishing process, and to improve the adhesion between the viscous fluid film 32, the wafer surface 10A, and the solder bump 28. Further, since the wafer back surface 10B is polished before the viscous fluid film 32 is cured in the polishing process, it is possible to prevent the moisture of the viscous fluid film 32 from evaporating due to the hardening of the viscous fluid film 32 and reducing the volume.

  In the manufacturing method of the present embodiment, a water-soluble material is applied to the surface 34A of the adhesive film 34 to form the viscous fluid film 32 in the application process, and the semiconductor wafer 10 is poured while flowing the cutting water Wa in the cutting process. Cut (see FIGS. 4A and 4C). Therefore, during the cutting process, the viscous fluid film 32 remaining on the wafer surface 10A is melted and washed away by the cutting water Wa.

  In the manufacturing method of the present embodiment, a wafer having a low dielectric constant film 18 therein is used as the semiconductor wafer 10 (see FIG. 2). In the manufacturing method of the present embodiment, the laser L1 is applied from the viscous fluid film 32 side to the scribe region 14 surrounding the chip forming region 12 after the peeling step and before the cutting step, so that the low dielectric constant film in the scribe region 14 is applied. A laser grouping step of removing 18 (see FIG. 7B). Accordingly, since the foreign matter scattered by the laser L1 comes into contact with the viscous fluid film 32, the wafer surface 10A covered with the viscous fluid film 32 is protected from the scattered foreign matter.

  In the manufacturing method of the present embodiment, the viscous fluid film 32 is laminated in such a thickness that the position lower than the center O of the height of the solder bump 28 becomes the surface 32A of the viscous fluid film 32 in the protection step. The adhesive film 34 is laminated with a thickness equal to or higher than the height H of the bump 28. For this reason, the adhesive film 34 is sufficiently thicker than the viscous fluid film 32, and the holding strength is maintained when the tape base material 36 is sucked and held by the chuck table 74 in the polishing process.

Second Embodiment
Next, a method for manufacturing a semiconductor chip according to the second embodiment (hereinafter referred to as “manufacturing method of the present embodiment”) will be described. The manufacturing method of this embodiment also employs a method of obtaining a plurality of semiconductor chips by cutting a semiconductor wafer on which solder bumps are formed along the thickness direction. The manufacturing method of the present embodiment is the same as that of the first embodiment described above except for the protection process for protecting the solder bumps, and thus the description thereof is omitted.

  In the manufacturing method of the present embodiment, after the preparation process of the semiconductor wafer 10, as shown in FIG. 3, the viscous fluid film 32, the adhesive film 34, and the tape base material 36 are provided on the wafer surface 10 </ b> A in the stacking direction L. And a protective step of laminating before the viscous fluid film 32 is cured. In this embodiment, this protection process includes a series of processes as shown in FIG.

First, as shown in FIG. 9A, in the protection step, a viscous fluid film 32 is applied to the wafer surface 10A by applying more water-soluble material than the viscous fluid film 32 will be laminated with the BG tape 38 later. A coating process for forming the film.
Next, as shown in FIG. 9B and FIG. 9C, the protection process includes a surface of the adhesive film 34 adhered to the tape substrate 36 before the viscous fluid film 32 is cured after the application process. A laminating step of laminating 34A and the wafer surface 10A with the viscous fluid film 32 interposed therebetween.

The coating process and the laminating process may be performed manually by humans, or may be performed by individual devices (such as a dispenser and a sticking device). In the manufacturing method of this embodiment, FIG. This is performed by a laminating apparatus 90 as shown.
The laminating apparatus 90 is an apparatus in which functions of a dispenser and a pasting apparatus are integrated. The laminating apparatus 90 includes a supply unit 92 for the BG tape 38, a coating unit 94 for the viscous fluid film 32, a laminating unit 96 for the semiconductor wafer 10 and the BG tape 38, and a control unit 98.

  The supply unit 92 is provided with an unwinding roller 100 for unwinding the wound BG tape 38. A laminating unit 96 is provided at the unwinding destination (supply destination) of the unwinding roller 100. Further, when the BG tape 38 is unwound between the laminating section 96 and the unwinding roller 100, the separator 38A covering the surface 34A of the adhesive film 34 of the BG tape 38 is peeled off from the BG tape 38. A separation conveying roller 102 is provided for conveying the sheet while conveying. A take-up roller 104 that winds the separator 38 </ b> A conveyed from the peeling conveyance roller 102 is provided at the conveyance destination of the peeling conveyance roller 102.

  The application unit 94 is located on the opposite side of the supply unit 92 with respect to the laminate unit 96. The coating portion 94 is provided with a wafer base 106 that adsorbs the wafer back surface 10B. Above the wafer base 106, a nozzle 108 is provided on the wafer surface 10 </ b> A to apply a water-soluble material in addition to viscosity and fluidity as the viscous fluid film 32. The wafer base 106 can go back and forth between the laminating section 96 and the coating section 94. After the viscous fluid film 32 is coated on the wafer surface 10A, the wafer base 106 slides from the coating section 94 to the laminating section 96. To do. In addition, an extending roller 110 that extends the viscous fluid film 32 is provided above the wafer base 106 and closer to the laminating portion 96 than the nozzle 108.

  The laminating unit 96 is provided with a feeding roller 112 that feeds the BG tape 38 supplied from the supplying unit 92 to the outside of the laminating apparatus 90. Below the delivery roller 112 and the supply unit 92, the wafer base 106 slid and moved from the coating unit 94 is located. Above the both ends of the wafer base 106 in the supply direction of the BG tape 38, for example, a pair of laminating rollers 116 that are brought into and out of contact with the wafer base 106 by an air cylinder 114 are provided. Each laminating roller 116 approaches the wafer base 106 when the BG tape 38 is supplied to cure the surface 34A of the adhesive film 34 and the wafer surface 10A, and the viscous fluid film 32 applied to the wafer surface 10A is cured. Prior to the lamination, the viscous fluid film 32 is interposed. After the lamination is finished, each laminating roller 116 is separated from the wafer base 106.

  The control unit 98 controls various members in the supply unit 92, the coating unit 94, the laminating unit 96, and the like (drive of the air cylinder 114, rotation driving of various rollers, etc.) via the data bus 98A.

  In the laminating apparatus 90 described above, the coating unit 94 and the laminating unit 96 perform the coating process and the laminating process in the manufacturing method of the present embodiment.

  Next, operations and effects of the manufacturing method of the above-described embodiment will be described.

  The manufacturing method of this embodiment is a protection process, in which a viscous fluid film 32 that adheres to the wafer surface 10A, an elastic adhesive film 34 that adheres to the viscous fluid film 32, and an adhesive film 34 are adhered to the wafer surface 10A. The tape base material 36 is laminated before the viscous fluid film 32 is cured. In this protection process, a water-soluble material is applied to the wafer surface 10A to form the viscous fluid film 32, and the surface 34A of the adhesive film 34 and the wafer surface 10A are bonded before the viscous fluid film 32 is cured. It has a laminating step of laminating with the viscous fluid film 32 interposed.

Therefore, according to the manufacturing method of the present embodiment, when the adhesive film 34 is laminated, that is, when the surface 34A of the adhesive film 34 and the wafer surface 10A are laminated, the viscous fluid film 32 interposed therebetween is cured. (See FIGS. 3 and 9). If the viscous fluid film 32 is not cured, the viscous fluid film 32 has fluidity. Therefore, the viscous fluid film 32 flows under the load applied during lamination and enters the bump root 30. Further, when the viscous fluid film 32 enters, the viscous fluid film 32 adheres to the solder bump 28 due to its viscosity (adhesive force), and the state where the viscous fluid film 32 enters the bump root 30 is maintained.
As a result, according to the manufacturing method of the present embodiment, the gap 30A around the bump base in the polishing process is made smaller than in the case where the elastic adhesive film 34 is laminated on the wafer surface 10A as in Reference Example 1. (See FIGS. 9 and 11).

  Moreover, the manufacturing method of this embodiment has the same peeling process as 1st Embodiment. In the manufacturing method of the present embodiment, the tape base material 36 is peeled from the wafer surface 10 </ b> A together with the adhesive film 34 in the peeling step. At this time, since the viscous fluid film 32 remains on the wafer surface 10A, the catching force between the adhesive film 34 and the solder bump 28 is reduced, and the adhesive film 34 of the BG tape 38 is laminated as in Reference Example 2. Compared to the case, the pump peeling hardly occurs.

  Although the first embodiment and the second embodiment of the technology disclosed in the present application have been described above, the technology disclosed in the present application is not limited to the above.

  For example, in the first embodiment, the case where the low dielectric constant film 18 is laminated between the semiconductor substrate 16 and the integrated circuit 20 has been described, but even if the low dielectric constant film 18 is laminated inside the integrated circuit 20. Good. In the manufacturing method of the first embodiment, a semiconductor wafer without the low dielectric constant film 18 may be prepared in the preparation process. In this case, the laser grouping process is omitted.

  Moreover, although 1st Embodiment demonstrated the case where the viscous fluid film 32 was laminated | stacked by the thickness so that the position lower than the center O of the height of the solder bump 28 may become the surface 32A of the viscous fluid film 32 in a protection process. The layers may be stacked such that the position higher than the center O is the surface 32A of the viscous fluid film 32. As a result, when the BG tape 38 is peeled off, the catching force between the adhesive film 34 of the BG tape 38 and the solder bump 28 is reduced, and the BG tape 38 is easily peeled off.

  In the first embodiment, a case where a water-soluble material is applied to the surface 34A of the elastic adhesive film 34 adhered to the tape substrate 36 in the application process will be described. In the second embodiment, the wafer surface 10A is applied in the application process. A case where a water-soluble material is applied to the substrate has been described. However, in the manufacturing method of each embodiment, a water-soluble material may be applied to each of the surface 34A of the adhesive film 34 and the wafer surface 10A in the application process.

  Furthermore, it goes without saying that the technology disclosed in the present application can be implemented with various modifications within a range not departing from the gist thereof.

DESCRIPTION OF SYMBOLS 10 Semiconductor wafer 12 Chip formation area 14 Scribe area 16 Semiconductor substrate 18 Low dielectric constant film (dielectric constant film)
20 Integrated Circuit 22 Sealing Film 28A Peripheral Surface 28 Solder Bump 32 Viscous Fluid Film 34 Adhesive Film 36 Tape Base Material 40 Laminating Device 42 Supplying Unit 44 Applying Unit 46 Laminating Unit 90 Laminating Device 92 Supplying Unit 94 Applying Unit 96 Laminating Unit Wa Cutting Water L Short pulse laser (laser)

Claims (4)

The surface of the wafer on which the solder bumps are formed is bonded to the viscous fluid film that has viscosity and fluidity and adheres to the wafer surface, the elastic adhesive film that adheres to the viscous fluid film, and the adhesive film A protective step of laminating the tape substrate before the viscous fluid film is cured;
A polishing step of holding the tape substrate and polishing the back surface of the wafer;
A peeling step of peeling the tape substrate together with the adhesive film from the surface of the wafer;
A cutting step of cutting the wafer along the thickness direction to obtain a plurality of semiconductor chips;
A method of manufacturing a semiconductor chip having The protection step includes an application step in which a water-soluble material is applied to at least one of the surface of the wafer and the surface of the adhesive film to form the viscous fluid film, and the viscous fluid film is formed after the application step. Before curing, laminating the surface of the adhesive film and the surface of the wafer through the viscous fluid film,
In the polishing step, the back surface of the wafer is polished before the viscous fluid film is cured,
In the cutting step, the wafer is cut while flowing cutting water.
A method for manufacturing a semiconductor chip according to claim 1 or 2. As the wafer, a wafer having a low dielectric constant film inside is used,
After the peeling step and before the cutting step, a laser grouping step of applying a laser to the scribe region around the chip formation region in the wafer from the viscous fluid film side to remove the low dielectric constant film in the scribe region. Have
A method for manufacturing a semiconductor chip according to claim 1 or 2. A viscous fluid film is formed by applying a water-soluble, viscous, and fluid material to at least one of the surface of the wafer on which the solder bumps are formed and the surface of the elastic adhesive film bonded to the tape substrate. An application part;
Before the viscous fluid film is cured after the application step, a laminate portion that laminates the surface of the adhesive film and the surface of the wafer with the viscous fluid film interposed therebetween,
A laminating apparatus.