JP4119054B2 - Method and apparatus for die bonding semiconductor elements - Google Patents

Method and apparatus for die bonding semiconductor elements Download PDF

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Publication number
JP4119054B2
JP4119054B2 JP20614899A JP20614899A JP4119054B2 JP 4119054 B2 JP4119054 B2 JP 4119054B2 JP 20614899 A JP20614899 A JP 20614899A JP 20614899 A JP20614899 A JP 20614899A JP 4119054 B2 JP4119054 B2 JP 4119054B2
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Japan
Prior art keywords
die
insulating adhesive
tape
adhesive tape
bonding
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Expired - Fee Related
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JP20614899A
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Japanese (ja)
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JP2000077432A (en
Inventor
時栢 南
東局 金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1744—Means bringing discrete articles into assembled relationship
    • Y10T156/1751—At least three articles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1744—Means bringing discrete articles into assembled relationship
    • Y10T156/1776—Means separating articles from bulk source
    • Y10T156/1778—Stacked sheet source
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53174—Means to fasten electrical component to wiring board, base, or substrate
    • Y10T29/53178—Chip component

Description

【０００１】
【発明の属する技術分野】
この発明は、一般に半導体素子と、その製造方法及び製造装置に関し、より詳しくは、絶縁接着テープにより接着されるダイを有する半導体素子と、半導体素子のダイ接着方法及びダイ接着装置とに関する。
【０００２】
【従来の技術】
一般に、半導体素子の製造において、ダイ接着とは、半導体ダイをリードフレーム又は印刷回路基板等の基板に接着する段階を言う。従来のダイ接着では、ダイを基板に接着する手段として、銀−エポキシ、銀−ガラス又はソルダ等の導電性の液状接着剤を使用する。この液状接着剤を基板上に滴下し、接着剤上に半導体ダイを実装し押圧する。
【０００３】
しかしながら、半導体製品の特性上、ダイ接着に絶縁接着剤を使用しなければならない場合がある。例えば、単一基板に複数のダイを接着する場合、各々のダイを互いに電気的に絶縁するため、絶縁接着剤が使用される。ここで、従来の液状の絶縁接着剤は、幾つかの問題点を有する。液状の絶縁接着剤は、ダイ接着の際、ダイへの下向押圧力により絶縁接着剤が側方に広がるため、基板上に極薄い接着剤層が形成されることになる。従って、液状の絶縁接着剤は、高い絶縁性を要求する半導体製品には使用することができない。液状接着剤の他の問題点は、接着剤層内に気泡が生じやすいことである。よく知られているように、接着剤層内の気泡は、接着剤層間の剥離又はパッケージクラックを引き起こす。また、液状接着剤の広がり性により接着領域以外の領域に接着剤が塗布されるおそれがある。このような不良は、後続のワイヤボンディング段階時に悪影響を及ぼす。
【０００４】
一方、液状の絶縁接着剤だけを使用する場合、充分な絶縁性を確保することが難しいことから、絶縁性を向上するため、液状の絶縁接着剤と一緒に絶縁薄片を使用することもある。セラミック又はエポキシのような絶縁材料よりなる薄片を、接着剤層間に介在する。しかるに、このような方法は、充分な絶縁性を確保することができるという利点を有するが、付加的な絶縁材料が要求され、製造工程が一層複雑であるという欠点を有する。さらに、作業時間が長く、且つ製造コストの上昇も不可避である。
【０００５】
絶縁薄片を用いた半導体素子１０の構造が図１に示されている。図１を参照すると、第１ダイ１３は、導電性接着剤１２によりリードフレーム１１に接着されている。第２ダイ１７は、絶縁薄片１５によりリードフレーム１１と電気的に絶縁される。第１ダイ１３のダイ接着は、通常のダイ接着方法により行われる。まず、リードフレーム１１における第１ダイの接着領域に導電性の液状接着剤１２を塗布し、それに第１ダイ１３を接着し、導電性の液状接着剤１２を硬化する。一方、第２ダイ１７のダイ接着は、次のような幾つかの段階を経て行われる。まず、液状の絶縁接着剤１４をリードフレームにおける第２ダイの接着領域に塗布する。次いで、液状の絶縁接着剤１４に絶縁薄片１５を取り付け、液状の絶縁接着剤１４を１次硬化する。絶縁薄片１５上に液状の絶縁接着剤１６を塗布し、それに第２ダイ１７を接着し、液状の絶縁接着剤１６を２次硬化する。ここで、絶縁薄片１５は、別の工程により製作されてダイ接着工程に供給される。この際、絶縁薄片をウェーハ状態で製造した後、ウェーハから個別ダイを分離することと同様に、絶縁薄膜から複数の個別絶縁薄片１５を分離する。
【０００６】
上述した絶縁薄片を用いた従来のダイボンディグ方法は、工程が複雑で、作業時間が長く、製造コストが高いという問題点を有する。さらに、絶縁薄片１５と一緒に液状の絶縁接着剤１４、１６が使用されるので、接着剤層内の気泡や液状接着剤の広がり性に起因した問題が依然として存在する。ダイ接着後、ダイが所定の剪断応力を有するように、液状の接着剤を硬化しなければならない。
【０００７】
【発明が解決しようとする課題】
従って、本発明の目的は、電気絶縁性テープを用いてダイを接着することにより、絶縁性及び信頼性を向上させることができるとともに、製造コストを減少させることができる半導体素子を提供することにある。
【０００８】
本発明の他の目的は、電気絶縁性テープを用いて製造段階を簡素化し、作業時間を短縮することができるダイ接着方法及び装置を提供することにある。
【０００９】
【課題を解決するための手段】
前記目的を達成するため、本発明の方法で製造される半導体素子は、電気伝導性を有する所定のサイズの導電性基板と、導電性接着剤により導電性基板に接着される第１ダイと、絶縁接着テープにより導電性基板に接着される少なくとも１つの第２ダイとを含む。
【００１０】
本発明の好ましい実施例による絶縁接着テープは、上面及び下面を有し且つポリイミドよりなる中心層と、該中心層の上面及び下面に各々形成され且つポリイミドよりなる接着層とを含むことが好ましい。中心層は約２０μｍ〜約６０μｍの厚さを有し、接着層は約１０μｍ〜約３０μｍの厚さを有する。また、絶縁接着テープは、約２５００Ｖ以上の絶縁耐圧を有する。基板としてはリードフレームを使用することができ、第１ダイはトランジスタチップ、第２ダイは制御チップに適用することができる。
【００１１】
本発明による半導体素子のダイ接着方法は、導電性接着剤により接着された第１ダイと、第２ダイを接着するための接着領域とを有する導電性基板を提供する段階と、絶縁接着テープを提供する段階と、導電性基板の接着領域に絶縁接着テープを取り付ける段階と、第２ダイを提供する段階と、絶縁接着テープに第２ダイを接着する段階と、導電性基板をアンロードする段階とを含む。
【００１２】
特に、本発明の好ましい実施例によると、絶縁接着テープを提供する段階は、リールに絶縁接着テープを巻き取りする段階と、リールから巻出される絶縁接着テープを、第２ダイのサイズに合わせて切断する段階とを含む。また、絶縁接着テープを取り付ける段階は、絶縁接着テープをピックアップして、基板側に運搬する段階と、絶縁接着テープを基板に取り付ける段階とを含む。絶縁接着テープを取り付ける段階又は第２ダイを接着する段階は、基板に約１５０℃〜約５００℃の熱、又は絶縁接着テープ又は第２ダイに約０．９８Ｎ/mm2〜約５．８８Ｎ/mm2の圧力を加えることにより行われる。本発明のダイ接着方法は、第２ダイを接着する段階後、第２ダイを加圧する段階をさらに含むことができる。
【００１３】
本発明のさらに他の態様によると、半導体素子のダイ接着装置は、導電性接着剤により接着された第１ダイと、第２ダイを接着するための接着領域とを有する基板を積載しているスタッカーと、スタッカーにその一端が隣接するように配置され、所定の距離をもって基板を搬送する搬送部と、基板に第２ダイを接着するための絶縁接着テープを供給するテープ供給部と、テープ供給部と搬送部との間に配置され、テープ供給部から供給される絶縁接着テープを基板の接着領域に取り付けるテープピックアップ手段と、複数の第２ダイを有するウェーハを載置するウェーハテーブルと、ウェーハテーブルと搬送部との間に配置され、ウェーハテーブル上のウェーハから第２ダイを分離して、第２ダイを基板の接着領域に接着させるダイピックアップ手段とを含む。
【００１４】
スタッカーとしては、リードフレームストリップ用マガジンを使用することができる。本発明のダイ接着装置は、搬送部の他端に隣接して配置され、第２ダイが接着された基板をアンロードするアンローダーと、ダイピックアップ手段とアンローダーとの間に配置され、基板に接着された第２ダイを加圧するための加圧機をさらに含むことができる。
【００１５】
本発明の好ましい実施例によると、ダイ接着装置のダイ供給部は、絶縁接着テープが巻き取りされているリールと、リールから巻出される絶縁接着テープを第２ダイのサイズに合わせて切断するテープ切断機と、リールからテープ切断機側に絶縁接着テープを供給するローラーと、テープ切断機により切断された絶縁接着テープを、その下面を吸着することにより固定するためのテープ吸着機とを含む。
【００１６】
テープピックアップ手段は、絶縁接着テープの上面を吸着して基板に移送し、絶縁接着テープを基板の接着領域に取り付ける。
ダイピックアップ手段は、第２ダイの上面を吸着して基板に移送し、第２ダイを基板上の絶縁接着テープに接着する。
【００１７】
【発明の実施の形態】
以下、添付の図面を参照として本発明をより詳しく説明する。
図２は、絶縁接着テープにより接着されるダイを有する本発明による半導体素子を示す断面図である。図２に示す半導体素子２０は、パワースイッチング素子であって、基板としてリードフレーム２１を使用する。半導体素子２０は、リードフレーム２１においての各々異なる接着領域に接着される第１ダイ２３及び第２ダイ２５を含む。第１ダイ２３は、ＭＯＳ型電界効果トランジスタのようなトランジスタチップであり、第２ダイ２５は、制御チップである。ダイ接着後、第１ダイ２３及び第２ダイ２５は、金属線によりリードフレーム２１に電気的に接続され、エポキシ系プラスチック樹脂等の封止樹脂で封止される。なお、金属線及び封止樹脂は、本発明と直接的な関連がないため図示していない。
【００１８】
リードフレーム２１は、電気伝導性及び熱伝導性に優れたＣｕ又はＦｅのような金属よりなり、トランジスタチップのドレインとして使用される。従って、第１ダイ２３とリードフレーム２１とを接着する接着剤２２は、電気伝導性を有するものである。これに対して、第２ダイ２５は、リードフレーム２１から絶縁されるので、接着物質２４は電気絶縁性を有するものである。ところが、上述したように、液状の絶縁接着剤を用いた従来のダイ接着方法では、所望の絶縁特性を確保するに足りない。
【００１９】
従って、本発明による半導体素子２０では、第２ダイ２５は、高い絶縁性を有する絶縁接着テープ２４を用いてリードフレーム２１に接着される。本発明の絶縁接着テープ２４は、ポリイミドよりなる中心層２４ａと、この中心層２４ａの上下面に形成され且つポリイミドよりなる２つの接着層２４ｂとを含む。中心層２４ａは、約２０〜約６０μｍの厚さを有する。接着層２４ｂは、各々約１０〜約３０μｍの厚さを有する。絶縁接着テープ２４は、約２５００以上の絶縁耐圧（又は絶縁破壊電圧ともいう）を有する。
【００２０】
本発明による半導体素子２０は、３つの層、即ち１つの中心層２４ａと２つの接着層２４ｂを含む絶縁接着テープを使用することが好ましい。しかしながら、他の実施例として、ただ１つのポリイミド接着層を含む絶縁接着テープを使用してもよい。この場合、絶縁接着テープ、即ちポリイミド接着層は、約１０〜約３０μｍの厚さを有し、約１０００Ｖ程度の絶縁耐圧を有する。
【００２１】
絶縁接着テープ２４は、絶縁性及び信頼性を向上させることができる。即ち液状接着剤の使用に起因した気泡発生や広がり性不良を防止することができる。また、絶縁接着テープ２４は、常温で全然接着性がないため、取り扱いが容易で、且つ熱及び圧力のいずれかまたは両方を加えることにより容易に接着させることかできる。さらに、絶縁接着テープ２４は、従来の絶縁性の液状絶縁性接着剤とは異なり、別の硬化段階を行わなくても充分な剪断応力を確保することができる。
【００２２】
上述のように、本発明の半導体素子は、ダイ接着手段として絶縁接着テープを使用する。以下では、絶縁接着テープを用いたダイ接着方法及び装置について説明する。ただし、導電性接着剤による第１ダイの接着は従来例と同様であるので、以下、第２ダイのダイ接着のみについて説明する。図３は、本発明によるダイ接着方法３０を示す流れ図である。図４は、本発明によるダイ接着装置４０を示す斜視図である。
【００２３】
図３及び図４を参照すると、第１ダイ６４が導電性接着剤６２により接着されているリードフレーム６０がダイ接着装置４０に提供される（図３のブロック３１）。リードフレーム６０は、ストリップタイプで形成されており、マガジン４２に積載されている。リードフレーム６０の代わりに、印刷回路基板、テープ配線基板等を基板として使用可能である。また、必要に応じて、マガジン４２以外に他のスタッカーを使用することができる。マガジン４２は、搬送部（図示せず）の一端に隣接して位置し、マガジン４２に積載されたリードフレーム６０は、順次搬送部に供給される。ダイ接着の際、搬送部は、リードフレーム６０を一定の間隔をもって搬送することにより、連続作業を可能とする。図４では、図面を簡単にするため、搬送部を図示していない。ここで、移送レール等の従来の基本的な移送システムが搬送部として使用され、リードフレームの下部に長手方向に搬送部を形成することは自明である。
【００２４】
リードフレーム６０に加えて、絶縁接着テープ６８がダイ接着装置４０に提供される（図３のブロック３２）。リードフレーム６０が搬送部により移送されると、テープ供給部７４がリードフレーム６０の接着領域６６に絶縁接着テープ６８を供給する。テープ供給部７４は、絶縁接着テープ６８が巻取られているリール４４と、このリール４４から巻出される絶縁接着テープ６８を切断するテープ切断機４８とを含む。そして、テープ供給部７４は、テープ切断機４８側に絶縁接着テープ６８を供給する上下部ローラー４６Ａ、４６Ｂを有する１組のローラー４６と、絶縁接着テープ６８の下面を吸着して絶縁接着テープ６８を固定するテープ吸着機５０とをさらに含む。図５乃至図８に示すように、テープ供給部７４は、テープ押圧手段４９をさらに含むことができる。
【００２５】
絶縁接着テープ６８は、リール４４に巻取られた状態で、上下部のローラ４６Ａ、４６Ｂ間を経てテープ切断機４８に連続的に供給され、テープ切断機４８は、絶縁接着テープ６８を第２ダイ７２のサイズに合わせて切断する。リール４４及び切断機４８の使用は、効率的且つ連続的なテープ供給を実現し、ダイ接着工程の生産性を向上させる。連続的に供給される絶縁接着テープ６８を切断する段階が図５及び図６に示されている。
【００２６】
図５及び図６に示すように、絶縁接着テープ６８がテープ切断機４８に提供されてテープ切断機４８により切断される際、テープ押圧手段４９がテープ切断機４８の前方でテープ６８を押圧し、テープ吸着機５０がテープ切断機６８の後方でテープ６８を吸着する。これにより、絶縁接着テープ６８が固定される。テープ押圧手段４９は、絶縁接着テープ６８の上下面を押圧することによりテープ６８を固定し、テープ吸着機５０は、テープ６８の下面を吸着することによりテープ６８を固定する。参照符号５１は、真空を提供する、即ち絶縁接着テープ６８を吸着するための真空吸着孔を指す。テープ切断機４８側に供給される絶縁接着テープ６８の長さを変化させるか、切断機４８の位置を変えることにより、絶縁接着テープ６９の切断サイズを調節することができる。また、テープ６８の幅によってリール４４の幅は変わる。
【００２７】
絶縁接着テープ６８を切断した後、図３及び図４に示すように、テープピックアップ手段５２が切断された絶縁接着テープ６８をリードフレーム６０に接着する（図３のブロック３３）。テープピックアップ手段５２は、テープ供給部７４のテープ吸着機５０と搬送部との間に位置し、テープ吸着機５０と搬送部上のリードフレーム６０との間を往復する。図７に示すように、テープピックアップ手段５２は、テープ吸着機５０に固定されている絶縁接着テープ６８をピックアップし、これ６８をリードフレーム６０側に運搬する。そして、図８に示すように、テープピックアップ手段５２は、絶縁接着テープ６８をリードフレーム６０の接着領域６６（図４参照）に接着する。テープピックアップ手段５２は、テープ吸着機５０と同様に、真空によりテープ６８を吸着する。テープピックアップ手段５２は、絶縁接着テープ６８の上面に位置し、真空吸着孔５３を通じて絶縁接着テープ６８の上面を吸着する。同時に、テープ吸着機５０の真空吸着孔５１は、絶縁接着テープ６８の下面を吸着することを中止する。従って、絶縁接着テープ６８は、テープ吸着機５０からテープピックアップ手段５２に移送される。
【００２８】
上述のように、本発明に使用される絶縁接着テープ６８は、熱及び圧力下で接着性を有する。熱は、搬送部を介してリードフレーム６０に提供され、圧力は、テープピックアップ手段５２により絶縁接着テープ６８に直接提供される。ここで、リードフレーム６０に提供される熱は、略１５０〜５００℃であり、絶縁接着テープ６８に提供される圧力は、約０．９８〜５．８８Ｎ/mm2である。
【００２９】
第２ダイ７２は、ウェーハ７０状態でダイ接着装置４０に提供される（図３のブロック３４）。ウェーハ７０は、個別ダイに分離されるべき複数の第２ダイ７２を含んでおり、ウェーハテーブル５６上に載置される。ウェーハ７０状態で第２ダイ７２が提供されると、ダイピックアップ手段５４が第２ダイ７２をピックアップしてリードフレーム６０の絶縁接着テープ６８に接着する（図３のブロック３５）。ダイピックアップ手段５４は、上記のテープピックアップ手段５２と同様の構造と作用を有する。ダイピックアップ手段５４は、ウェーハテーブル５６と搬送部との間に位置し、ウェーハテーブル５６と搬送部上のリードフレーム６０との間を往復する。ダイピックアップ手段５４は、第２ダイ７２の上面を吸着することにより、第２ダイ７２をウェーハから分離し、第２ダイ７２をリードフレーム６０に運搬し、絶縁接着テープ６８に接着する。第２ダイ７２のダイ接着には、絶縁接着テープの接着時と同様に、熱及び圧力を必要とする。
【００３０】
本発明のダイ接着方法（図３のブロック３０）は、第２ダイの接着段階（図３のブロック３５）後に、第２ダイを加圧する段階（図３のブロック３６）をさらに含むことができる。この加圧段階は、ダイ接着後に、確実な接着力を与えるために行われ、必ずしも必要なものではない。加圧機５８は、リードフレーム５８上に整列され、第２ダイ７２の上面を加圧する。
【００３１】
ダイ接着が完了した後、リードフレーム６０は、搬送部からアンローダー（図示せず）に排出される（図３のブロック３７）。アンローダーは、搬送部の他端（マガジン４２の反対側）に隣接して位置し、搬送部から排出されるリードフレーム６０を収納する。
【００３２】
【発明の効果】
以上説明したように、本発明の半導体素子は、ダイ接着に絶縁接着テープを使用するので、絶縁性及び信頼性を確保することができる。絶縁接着テープは、約２５００Ｖ以上の絶縁耐圧を有し、液状接着剤の使用に起因した接着剤層内の気泡、接着剤層間の剥離又はパッケージクラックを防止することができる。また、絶縁接着テープは、従来の液状接着剤の使用に起因した広がり性不良のような信頼性問題を防止することができる。さらに、絶縁接着テープは、常温で接着性がないため、取り扱いが容易で、別の硬化段階を行わなくても充分な剪断応力を確保することができる。
【００３３】
本発明による絶縁接着テープを用いたダイ接着方法は、液状接着剤と絶縁薄片を用いた従来のダイ接着方法に比べて簡単である。従って、本発明によると、ダイ接着作業時間を短縮することができ、製造コストを低減することができる。絶縁薄片等のように追加的に要求される資材もない。
【００３４】
尚、上述した本発明の好ましい実施例は、あくまでも、本発明の技術内容を明らかにするものであって、そのような具体例にのみ限定して狭義に解釈されるべきものではなく、本発明の精神と特許請求の範囲内で、いろいろと変更して実施することができるものである。
【図面の簡単な説明】
【図１】従来の半導体素子を示す断面図である。
【図２】絶縁接着テープにより接着されるダイを有する本発明による半導体素子を示す断面図である。
【図３】本発明によるダイ接着方法を示す流れ図である。
【図４】本発明によるダイ接着装置を示す斜視図である。
【図５】絶縁接着テープ上にテープ切断機を整列する段階を示す断面図である。
【図６】切断機で絶縁接着テープを切断する段階を示す断面図である。
【図７】切断された絶縁接着テープの上面をテープピックアップ手段により吸着する段階を示す断面図である。
【図８】絶縁接着テープをリードフレームに接着する段階を示す断面図である。
【符号の説明】
２０ 半導体素子
２１ 基板（又はリードフレーム）
２２ 導電性接着剤
２３ 第１ダイ
２５ 第２ダイ
２４ 絶縁接着テープ
４２ マガジン
４４ リール
４６ ローラー
４８ テープ切断機
５０ テープ吸着機
５２ テープピックアップ手段
５４ ダイピックアップ手段
５６ ウェーハテーブル
５８ 加圧機
６０ リードフレーム
６２ 導電性接着剤
６４ 第１ダイ
６６ 接着領域
６８ 絶縁接着テープ
７０ ウェーハ
７２ 第２ダイ
７４ テープ供給部[0001]
BACKGROUND OF THE INVENTION
The present invention generally relates to a semiconductor element, a manufacturing method thereof, and a manufacturing apparatus, and more particularly to a semiconductor element having a die bonded by an insulating adhesive tape, a die bonding method of a semiconductor element, and a die bonding apparatus.
[0002]
[Prior art]
In general, in the manufacture of semiconductor elements, die bonding refers to the step of bonding a semiconductor die to a substrate such as a lead frame or a printed circuit board. In conventional die bonding, a conductive liquid adhesive such as silver-epoxy, silver-glass or solder is used as means for bonding the die to the substrate. This liquid adhesive is dropped on the substrate, and a semiconductor die is mounted on the adhesive and pressed.
[0003]
However, due to the characteristics of semiconductor products, it may be necessary to use an insulating adhesive for die bonding. For example, when bonding multiple dies to a single substrate, an insulating adhesive is used to electrically insulate each die from each other. Here, the conventional liquid insulating adhesive has several problems. When the liquid insulating adhesive is bonded to the die, the insulating adhesive spreads laterally due to the downward pressing force applied to the die, so that an extremely thin adhesive layer is formed on the substrate. Therefore, the liquid insulating adhesive cannot be used for semiconductor products that require high insulation properties. Another problem with liquid adhesives is that bubbles are likely to form in the adhesive layer. As is well known, air bubbles in the adhesive layer cause delamination or package cracks between the adhesive layers. Moreover, there exists a possibility that an adhesive agent may be apply | coated to area | regions other than an adhesion | attachment area | region by the spreading property of a liquid adhesive agent. Such defects will adversely affect subsequent wire bonding steps.
[0004]
On the other hand, when only a liquid insulating adhesive is used, it is difficult to ensure sufficient insulating properties. Therefore, in order to improve the insulating properties, an insulating flake may be used together with the liquid insulating adhesive. A piece of insulating material such as ceramic or epoxy is interposed between the adhesive layers. However, such a method has an advantage that sufficient insulation can be ensured, but has a disadvantage that an additional insulating material is required and the manufacturing process is more complicated. Furthermore, the work time is long and the manufacturing cost is unavoidable.
[0005]
The structure of a semiconductor device 10 using insulating flakes is shown in FIG. Referring to FIG. 1, the first die 13 is bonded to the lead frame 11 with a conductive adhesive 12. The second die 17 is electrically insulated from the lead frame 11 by the insulating flakes 15. The die bonding of the first die 13 is performed by a normal die bonding method. First, the conductive liquid adhesive 12 is applied to the bonding region of the first die in the lead frame 11, the first die 13 is bonded thereto, and the conductive liquid adhesive 12 is cured. On the other hand, the die bonding of the second die 17 is performed through the following several steps. First, the liquid insulating adhesive 14 is applied to the bonding area of the second die in the lead frame. Next, the insulating thin piece 15 is attached to the liquid insulating adhesive 14, and the liquid insulating adhesive 14 is primarily cured. A liquid insulating adhesive 16 is applied on the insulating flakes 15, and the second die 17 is adhered thereto, and the liquid insulating adhesive 16 is secondarily cured. Here, the insulating flakes 15 are manufactured by a separate process and supplied to the die bonding process. At this time, after the insulating flakes are manufactured in a wafer state, a plurality of individual insulating flakes 15 are separated from the insulating thin film in the same manner as separating the individual dies from the wafer.
[0006]
The conventional die bonding method using the insulating flakes described above has problems that the process is complicated, the working time is long, and the manufacturing cost is high. Furthermore, since the liquid insulating adhesives 14 and 16 are used together with the insulating flakes 15, there are still problems due to the bubbles in the adhesive layer and the spread of the liquid adhesive. After die bonding, the liquid adhesive must be cured so that the die has a predetermined shear stress.
[0007]
[Problems to be solved by the invention]
Accordingly, it is an object of the present invention to provide a semiconductor element that can improve insulation and reliability by bonding a die using an electrically insulating tape, and can reduce manufacturing costs. is there.
[0008]
Another object of the present invention is to provide a die bonding method and apparatus capable of simplifying the manufacturing stage and shortening the working time by using an electrically insulating tape.
[0009]
[Means for Solving the Problems]
To achieve the above object, a semiconductor element manufactured by the method of the present invention includes a conductive substrate of a predetermined size having electrical conductivity, a first die to be bonded to the conductive substrate by a conductive adhesive, And at least one second die bonded to the conductive substrate by an insulating adhesive tape.
[0010]
The insulating adhesive tape according to a preferred embodiment of the present invention preferably includes a central layer made of polyimide and having an upper surface and a lower surface, and an adhesive layer made of polyimide and formed on the upper and lower surfaces of the central layer. The central layer has a thickness of about 20 μm to about 60 μm, and the adhesive layer has a thickness of about 10 μm to about 30 μm. Further, the insulating adhesive tape has a withstand voltage of about 2500V or more. A lead frame can be used as the substrate, and the first die can be applied to a transistor chip and the second die can be applied to a control chip.
[0011]
Die bonding method of a semiconductor device according to the present invention comprises a first die bonded by a conductive adhesive, and providing an electrically conductive substrate having a bonding area for bonding the second die, the insulating adhesive tape Providing a step, attaching an insulating adhesive tape to the bonding area of the conductive substrate , providing a second die, bonding the second die to the insulating adhesive tape, and unloading the conductive substrate. Including.
[0012]
In particular, according to a preferred embodiment of the present invention, the step of providing an insulating adhesive tape comprises the steps of Ri taken-out winding an insulating adhesive tape on the reel, an insulating adhesive tape is unwound from the reel, the size of the second die And cutting together. The step of attaching the insulating adhesive tape includes a step of picking up the insulating adhesive tape and transporting it to the substrate side, and a step of attaching the insulating adhesive tape to the substrate. The step of attaching the insulating adhesive tape or adhering the second die includes heat of about 150 ° C. to about 500 ° C. to the substrate, or about 0.98 N / mm 2 to about 5.88 N / second to the insulating adhesive tape or second die. It is performed by applying a pressure of mm 2. The die bonding method of the present invention may further include a step of pressing the second die after the step of bonding the second die.
[0013]
According to still another aspect of the present invention, a semiconductor device die bonding apparatus is loaded with a substrate having a first die bonded by a conductive adhesive and an adhesive region for bonding a second die. A stacker, a transport unit that is disposed so that one end of the stacker is adjacent to the stacker, and transports the substrate at a predetermined distance; a tape supply unit that supplies an insulating adhesive tape for bonding the second die to the substrate; and a tape supply A tape pick-up means that is disposed between the transfer section and the transfer section and attaches an insulating adhesive tape supplied from the tape supply section to the bonding area of the substrate, a wafer table on which a wafer having a plurality of second dies is placed, and a wafer A die picker disposed between the table and the transfer unit, separating the second die from the wafer on the wafer table and bonding the second die to the bonding region of the substrate. And a flop means.
[0014]
As the stacker, a lead frame strip magazine can be used. The die bonding apparatus of the present invention is disposed adjacent to the other end of the transport unit, and is disposed between the unloader for unloading the substrate to which the second die is bonded, the die pickup means, and the unloader. And a pressurizer for pressurizing the second die bonded to the substrate.
[0015]
According to a preferred embodiment of the present invention, die supply portion of the die bonding apparatus, cut to the reel insulating adhesive tape is Ri taken-out winding, the insulating adhesive tape is unwound from the reel to the size of the second die A tape cutting machine, a roller for supplying an insulating adhesive tape from the reel to the tape cutting machine side, and a tape suction machine for fixing the insulating adhesive tape cut by the tape cutting machine by adsorbing the lower surface thereof Including.
[0016]
The tape pickup means adsorbs the upper surface of the insulating adhesive tape and transfers it to the substrate, and attaches the insulating adhesive tape to the adhesive region of the substrate.
The die pickup means sucks the upper surface of the second die and transfers it to the substrate, and bonds the second die to the insulating adhesive tape on the substrate.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
FIG. 2 is a cross-sectional view showing a semiconductor device according to the present invention having a die bonded by an insulating adhesive tape. A semiconductor element 20 shown in FIG. 2 is a power switching element, and uses a lead frame 21 as a substrate. The semiconductor element 20 includes a first die 23 and a second die 25 that are bonded to different bonding regions in the lead frame 21. The first die 23 is a transistor chip such as a MOS field effect transistor, and the second die 25 is a control chip. After die bonding, the first die 23 and the second die 25 are electrically connected to the lead frame 21 by metal wires and sealed with a sealing resin such as an epoxy plastic resin. The metal wire and the sealing resin are not shown because they are not directly related to the present invention.
[0018]
The lead frame 21 is made of a metal such as Cu or Fe having excellent electrical conductivity and thermal conductivity, and is used as a drain of a transistor chip. Therefore, the adhesive 22 that bonds the first die 23 and the lead frame 21 has electrical conductivity. On the other hand, since the second die 25 is insulated from the lead frame 21, the adhesive substance 24 has electrical insulation. However, as described above, the conventional die bonding method using a liquid insulating adhesive is insufficient to secure desired insulating characteristics.
[0019]
Therefore, in the semiconductor element 20 according to the present invention, the second die 25 is bonded to the lead frame 21 using the insulating adhesive tape 24 having high insulating properties. The insulating adhesive tape 24 of the present invention includes a central layer 24a made of polyimide and two adhesive layers 24b made of polyimide and formed on the upper and lower surfaces of the central layer 24a. The center layer 24a has a thickness of about 20 to about 60 μm. Each of the adhesive layers 24b has a thickness of about 10 to about 30 μm. The insulating adhesive tape 24 has a dielectric strength voltage (also referred to as dielectric breakdown voltage) of about 2500 or more.
[0020]
The semiconductor element 20 according to the present invention preferably uses an insulating adhesive tape including three layers, that is, one central layer 24a and two adhesive layers 24b. However, as another example, an insulating adhesive tape including only one polyimide adhesive layer may be used. In this case, the insulating adhesive tape, i.e., the polyimide adhesive layer, has a thickness of about 10 to about 30 [mu] m, and has a withstand voltage of about 1000V.
[0021]
The insulating adhesive tape 24 can improve insulation and reliability. That is, it is possible to prevent the generation of bubbles and poor spread due to the use of the liquid adhesive. Moreover, since the insulating adhesive tape 24 has no adhesiveness at room temperature, it is easy to handle and can be easily adhered by applying either or both of heat and pressure. Furthermore, unlike the conventional insulating liquid insulating adhesive, the insulating adhesive tape 24 can ensure a sufficient shear stress without performing a separate curing step.
[0022]
As described above, the semiconductor element of the present invention uses an insulating adhesive tape as a die bonding means. Hereinafter, a die bonding method and apparatus using an insulating adhesive tape will be described. However, since the bonding of the first die with the conductive adhesive is the same as that of the conventional example, only the die bonding of the second die will be described below. FIG. 3 is a flow diagram illustrating a die attach method 30 according to the present invention. FIG. 4 is a perspective view showing a die bonding apparatus 40 according to the present invention.
[0023]
Referring to FIGS. 3 and 4, the lead frame 60 to which the first die 64 is bonded by the conductive adhesive 62 is provided to the die bonding apparatus 40 (block 31 in FIG. 3). The lead frame 60 is formed in a strip type and is loaded on the magazine 42. Instead of the lead frame 60, a printed circuit board, a tape wiring board, or the like can be used as the board. In addition to the magazine 42, other stackers can be used as necessary. The magazine 42 is positioned adjacent to one end of a transport unit (not shown), and the lead frames 60 stacked on the magazine 42 are sequentially supplied to the transport unit. At the time of die bonding, the transport unit enables continuous work by transporting the lead frame 60 at a constant interval. In FIG. 4, the transport unit is not shown for the sake of simplicity. Here, it is obvious that a conventional basic transfer system such as a transfer rail is used as the transfer unit, and the transfer unit is formed in the longitudinal direction below the lead frame.
[0024]
In addition to the lead frame 60, an insulating adhesive tape 68 is provided to the die bonding apparatus 40 (block 32 in FIG. 3). When the lead frame 60 is transferred by the transport unit, the tape supply unit 74 supplies the insulating adhesive tape 68 to the bonding region 66 of the lead frame 60. The tape supply unit 74 includes a reel 44 around which the insulating adhesive tape 68 is wound, and a tape cutting machine 48 that cuts the insulating adhesive tape 68 unwound from the reel 44. Then, the tape supply unit 74 adsorbs a pair of rollers 46 having upper and lower rollers 46A and 46B for supplying the insulating adhesive tape 68 to the tape cutting machine 48 side, and the lower surface of the insulating adhesive tape 68 to insulate the insulating adhesive tape 68. And a tape adsorber 50 for fixing. As shown in FIGS. 5 to 8, the tape supply unit 74 may further include a tape pressing unit 49.
[0025]
The insulating adhesive tape 68 is continuously supplied to the tape cutting machine 48 through the upper and lower rollers 46A and 46B while being wound around the reel 44, and the tape cutting machine 48 supplies the insulating adhesive tape 68 to the second adhesive tape 68. Cut according to the size of the die 72. The use of the reel 44 and the cutting machine 48 achieves an efficient and continuous tape supply and improves the productivity of the die bonding process. The steps of cutting the continuously supplied insulating adhesive tape 68 are shown in FIGS.
[0026]
As shown in FIGS. 5 and 6, when the insulating adhesive tape 68 is provided to the tape cutter 48 and is cut by the tape cutter 48, the tape pressing means 49 presses the tape 68 in front of the tape cutter 48. The tape suction device 50 sucks the tape 68 behind the tape cutting device 68. Thereby, the insulating adhesive tape 68 is fixed. The tape pressing means 49 fixes the tape 68 by pressing the upper and lower surfaces of the insulating adhesive tape 68, and the tape suction device 50 fixes the tape 68 by sucking the lower surface of the tape 68. Reference numeral 51 indicates a vacuum suction hole for providing a vacuum, that is, for sucking the insulating adhesive tape 68. The cutting size of the insulating adhesive tape 69 can be adjusted by changing the length of the insulating adhesive tape 68 supplied to the tape cutting machine 48 side or changing the position of the cutting machine 48. Further, the width of the reel 44 varies depending on the width of the tape 68.
[0027]
After the insulating adhesive tape 68 is cut, the insulating adhesive tape 68 from which the tape pickup means 52 has been cut is bonded to the lead frame 60 as shown in FIGS. 3 and 4 (block 33 in FIG. 3). The tape pickup means 52 is located between the tape suction unit 50 and the transport unit of the tape supply unit 74, and reciprocates between the tape suction unit 50 and the lead frame 60 on the transport unit. As shown in FIG. 7, the tape pick-up means 52 picks up the insulating adhesive tape 68 fixed to the tape suction device 50 and conveys the 68 to the lead frame 60 side. Then, as shown in FIG. 8, the tape pickup means 52 adheres the insulating adhesive tape 68 to the adhesive region 66 (see FIG. 4) of the lead frame 60. The tape pick-up means 52 adsorbs the tape 68 by vacuum, like the tape adsorber 50. The tape pickup means 52 is located on the upper surface of the insulating adhesive tape 68 and sucks the upper surface of the insulating adhesive tape 68 through the vacuum suction hole 53. At the same time, the vacuum suction hole 51 of the tape suction device 50 stops sucking the lower surface of the insulating adhesive tape 68. Accordingly, the insulating adhesive tape 68 is transferred from the tape suction device 50 to the tape pickup means 52.
[0028]
As described above, the insulating adhesive tape 68 used in the present invention has adhesiveness under heat and pressure. Heat is provided to the lead frame 60 via the transport section, and pressure is provided directly to the insulating adhesive tape 68 by the tape pickup means 52. Here, the heat provided to the lead frame 60 is approximately 150 to 500 ° C., and the pressure provided to the insulating adhesive tape 68 is approximately 0.98 to 5.88 N / mm 2 .
[0029]
The second die 72 is provided to the die bonding apparatus 40 in the wafer 70 state (block 34 in FIG. 3). The wafer 70 includes a plurality of second dies 72 to be separated into individual dies, and is placed on a wafer table 56. When the second die 72 is provided in the wafer 70 state, the die pickup means 54 picks up the second die 72 and adheres it to the insulating adhesive tape 68 of the lead frame 60 (block 35 in FIG. 3). The die pickup means 54 has the same structure and action as the tape pickup means 52 described above. The die pick-up means 54 is positioned between the wafer table 56 and the transfer unit, and reciprocates between the wafer table 56 and the lead frame 60 on the transfer unit. The die pick-up means 54 adsorbs the upper surface of the second die 72 to separate the second die 72 from the wafer, transport the second die 72 to the lead frame 60, and bond it to the insulating adhesive tape 68. The die bonding of the second die 72 requires heat and pressure as in the case of bonding the insulating adhesive tape.
[0030]
The die bonding method of the present invention (block 30 in FIG. 3) may further include pressing the second die (block 36 in FIG. 3) after the second die bonding step (block 35 in FIG. 3). . This pressurization step is performed to give a reliable adhesive force after die bonding, and is not always necessary. The pressurizer 58 is aligned on the lead frame 58 and pressurizes the upper surface of the second die 72.
[0031]
After the die bonding is completed, the lead frame 60 is discharged from the transport unit to an unloader (not shown) (block 37 in FIG. 3). The unloader is positioned adjacent to the other end (opposite side of the magazine 42) of the transport unit and stores the lead frame 60 discharged from the transport unit.
[0032]
【The invention's effect】
As described above, since the semiconductor element of the present invention uses an insulating adhesive tape for die bonding, it is possible to ensure insulation and reliability. The insulating adhesive tape has a dielectric breakdown voltage of about 2500 V or more, and can prevent bubbles in the adhesive layer, peeling between the adhesive layers, or package cracks due to the use of the liquid adhesive. Also, the insulating adhesive tape can prevent reliability problems such as poor spread due to the use of conventional liquid adhesives. Furthermore, since the insulating adhesive tape does not have adhesiveness at room temperature, it is easy to handle, and a sufficient shear stress can be ensured without performing another curing step.
[0033]
The die bonding method using the insulating adhesive tape according to the present invention is simpler than the conventional die bonding method using a liquid adhesive and insulating flakes. Therefore, according to the present invention, the die bonding operation time can be shortened, and the manufacturing cost can be reduced. There is no additional required material such as insulating flakes.
[0034]
It should be noted that the preferred embodiments of the present invention described above are intended to clarify the technical contents of the present invention, and should not be construed in a narrow sense as being limited to such specific examples. Various modifications can be made within the spirit and scope of the claims.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a conventional semiconductor device.
FIG. 2 is a cross-sectional view of a semiconductor device according to the present invention having a die bonded by an insulating adhesive tape.
FIG. 3 is a flowchart illustrating a die bonding method according to the present invention.
FIG. 4 is a perspective view showing a die bonding apparatus according to the present invention.
FIG. 5 is a cross-sectional view showing a step of aligning a tape cutter on an insulating adhesive tape.
FIG. 6 is a cross-sectional view showing a step of cutting the insulating adhesive tape with a cutting machine.
FIG. 7 is a cross-sectional view showing a stage in which the upper surface of the cut insulating adhesive tape is adsorbed by a tape pickup means.
FIG. 8 is a cross-sectional view showing a step of bonding an insulating adhesive tape to a lead frame.
[Explanation of symbols]
20 Semiconductor element 21 Substrate (or lead frame)
22 conductive adhesive 23 first die 25 second die 24 insulating adhesive tape 42 magazine 44 reel 46 roller 48 tape cutting machine 50 tape suction machine 52 tape pick-up means 54 die pick-up means 56 wafer table 58 pressure machine 60 lead frame 62 conductive Adhesive 64 first die 66 adhesive region 68 insulating adhesive tape 70 wafer 72 second die 74 tape supply unit

Claims (19)

導電性接着剤により接着された第１ダイと、第２ダイを接着するための接着領域とを有する導電性基板を提供する段階と、
絶縁接着テープを提供する段階と、
前記導電性基板の接着領域に前記絶縁接着テープを取り付ける段階と、
前記第２ダイを提供する段階と、
前記絶縁接着テープに前記第２ダイを接着する段階と、
前記導電性基板をアンロードする段階と、
を含むことを特徴とする半導体素子のダイ接着方法。Providing a conductive substrate having a first die bonded by a conductive adhesive and an adhesive region for bonding the second die;
Providing an insulating adhesive tape; and
Attaching the insulating adhesive tape to an adhesive region of the conductive substrate;
Providing the second die;
Adhering the second die to the insulating adhesive tape;
Unloading the conductive substrate;
A die bonding method for a semiconductor element, comprising: 前記絶縁接着テープを提供する段階は、リールに絶縁接着テープを巻取る段階と、前記リールから巻出される絶縁接着テープを、前記第２ダイのサイズに合わせて切断する段階とを含むことを特徴とする請求項１に記載の半導体素子のダイ接着方法。  Providing the insulating adhesive tape includes winding the insulating adhesive tape around a reel, and cutting the insulating adhesive tape unwound from the reel in accordance with the size of the second die. The die bonding method for a semiconductor element according to claim 1. 前記絶縁接着テープを取り付ける段階は、前記絶縁接着テープをピックアップして前記導電性基板側に運搬する段階と、前記絶縁接着テープを前記導電性基板に取り付ける段階とを含むことを特徴とする請求項１に記載の半導体素子のダイ接着方法。  The step of attaching the insulating adhesive tape includes a step of picking up the insulating adhesive tape and transporting the insulating adhesive tape to the conductive substrate side, and a step of attaching the insulating adhesive tape to the conductive substrate. 2. A die bonding method for a semiconductor element according to 1. 前記絶縁接着テープを取り付ける段階は、前記導電性基板に１５０℃以上５００℃以下の熱を加えることにより行われることを特徴とする請求項１に記載の半導体素子のダイ接着方法。  The method of claim 1, wherein the step of attaching the insulating adhesive tape is performed by applying heat of 150 ° C. to 500 ° C. to the conductive substrate. 前記絶縁接着テープを接着する段階は、前記絶縁接着テープに０．９８Ｎ/mm2以上５．８８Ｎ/mm2以下の圧力を加えることにより行われることを特徴とする請求項１に記載の半導体素子のダイ接着方法。 2. The semiconductor device according to claim 1, wherein the step of bonding the insulating adhesive tape is performed by applying a pressure of 0.98 N / mm 2 to 5.88 N / mm 2 to the insulating adhesive tape. Die bonding method. 前記第２ダイを接着する段階は、前記導電性基板に１５０℃以上５００℃以下の熱を加えることにより行われることを特徴とする請求項１に記載の半導体素子のダイ接着方法。  The method of claim 1, wherein the step of bonding the second die is performed by applying heat of 150 ° C. to 500 ° C. to the conductive substrate. 前記第２ダイを接着する段階は、前記第２ダイに０．９８Ｎ/mm2以上５．８８Ｎ/mm2以下の圧力を加えることにより行われることを特徴とする請求項１に記載の半導体素子のダイ接着方法。The semiconductor device according to claim 1, wherein the step of bonding the second die is performed by applying a pressure of 0.98 N / mm 2 or more and 5.88 N / mm 2 or less to the second die. Die bonding method. 前記第２ダイを接着する段階後、前記第２ダイを加圧する段階をさらに含むことを特徴とする請求項１に記載の半導体素子のダイ接着方法。  The method of claim 1, further comprising pressing the second die after the step of bonding the second die. 導電性接着剤により接着された第１ダイと、第２ダイを接着するための接着領域とを有する導電性基板を積載するスタッカーと、
前記スタッカーにその一端が隣接するように配置され、所定の間隔をもって前記導電性基板を搬送する搬送部と、
前記導電性基板に前記第２ダイを接着するための絶縁接着テープを供給するテープ供給部と、
前記テープ供給部と前記搬送部との間に配置され、前記テープ供給部から供給される前記絶縁接着テープを前記導電性基板の接着領域に接着するテープピックアップ手段と、
複数の前記第２ダイを有するウェーハを載置するウェーハテーブルと、
前記ウェーハテーブルと前記搬送部との間に配置され、前記ウェーハテーブル上のウェーハから前記第２ダイを分離して、前記第２ダイを前記導電性基板の接着領域に接着させるダイピックアップ手段とを含むことを特徴とする半導体素子のダイ接着装置。A stacker on which a conductive substrate having a first die bonded by a conductive adhesive and an adhesive region for bonding the second die is mounted;
A transport unit that is disposed so that one end thereof is adjacent to the stacker, and transports the conductive substrate at a predetermined interval;
A tape supply unit for supplying an insulating adhesive tape for bonding the second die to the conductive substrate;
A tape pick-up means that is disposed between the tape supply unit and the transport unit and adheres the insulating adhesive tape supplied from the tape supply unit to an adhesive region of the conductive substrate;
A wafer table on which a wafer having a plurality of the second dies is placed;
A die pick-up means disposed between the wafer table and the transfer unit, separating the second die from the wafer on the wafer table, and bonding the second die to the bonding region of the conductive substrate; A die bonding apparatus for semiconductor elements, comprising: 前記スタッカーは、リードフレームストリップ用マガジンであることを特徴とする請求項９に記載の半導体素子のダイ接着装置。  10. The die bonding apparatus for a semiconductor device according to claim 9, wherein the stacker is a lead frame strip magazine. 前記テープ供給部は、前記絶縁接着テープが巻取られているリールを含むことを特徴とする請求項９に記載の半導体素子のダイ接着装置。  The die bonding apparatus for a semiconductor device according to claim 9, wherein the tape supply unit includes a reel on which the insulating adhesive tape is wound. 前記リールは、前記絶縁接着テープの幅に応じた幅のリールに変更され得ることを特徴とする請求項１１に記載の半導体素子のダイ接着装置。The reel is the die bonding apparatus as claimed in claim 11, characterized in that could be changed to reel width corresponding to the width of the insulating adhesive tape. 前記テープ供給部は、前記リールから巻出される絶縁接着テープを前記第２ダイのサイズに合わせて切断するテープ切断機をさらに含むことを特徴とする請求項１１に記載の半導体素子のダイ接着装置。  12. The die bonding apparatus for a semiconductor device according to claim 11, wherein the tape supply unit further includes a tape cutting machine for cutting the insulating adhesive tape unwound from the reel in accordance with the size of the second die. . 前記テープ供給部は、前記リールから前記テープ切断機側に前記絶縁接着テープを供給するローラーをさらに含むことを特徴とする請求項１３に記載の半導体素子のダイ接着装置。  14. The die bonding apparatus for a semiconductor device according to claim 13, wherein the tape supply unit further includes a roller for supplying the insulating adhesive tape from the reel to the tape cutting machine side. 前記テープ供給部は、前記テープ切断機により切断された前記絶縁接着テープを、その下面を吸着することにより固定するためのテープ吸着機をさらに含むことを特徴とする請求項１３に記載の半導体素子のダイ接着装置。  The semiconductor device according to claim 13, wherein the tape supply unit further includes a tape adsorber for fixing the insulating adhesive tape cut by the tape cutter by adsorbing a lower surface thereof. Die bonding equipment. 前記テープピックアップ手段は、前記絶縁接着テープの上面を吸着して前記導電性基板に移送し、前記絶縁接着テープを前記導電性基板の接着領域に取り付けることを特徴とする請求項９に記載の半導体素子のダイ接着装置。  10. The semiconductor according to claim 9, wherein the tape pick-up means sucks an upper surface of the insulating adhesive tape and transfers it to the conductive substrate, and attaches the insulating adhesive tape to an adhesive region of the conductive substrate. Device die bonding equipment. 前記ダイピックアップ手段は、前記第２ダイの上面を吸着して前記導電性基板に移送し、前記第２ダイを前記導電性基板上の前記絶縁接着テープに接着することを特徴とする請求項９に記載の半導体素子のダイ接着装置。  The die pick-up means attracts the upper surface of the second die and transfers it to the conductive substrate, and bonds the second die to the insulating adhesive tape on the conductive substrate. A die bonding apparatus for semiconductor elements as described in 1. 前記搬送部の他端に隣接して配置され、前記第２ダイが接着された導電性基板をアンロードするアンローダーをさらに含むことを特徴とする請求項９に記載の半導体素子のダイ接着装置。  10. The die bonding apparatus for a semiconductor device according to claim 9, further comprising an unloader disposed adjacent to the other end of the transfer unit and unloading the conductive substrate to which the second die is bonded. . 前記ダイピックアップ手段と前記アンローダーとの間に配置され、前記導電性基板に接着された前記第２ダイを加圧するための加圧機をさらに含むことを特徴とする請求項１８に記載の半導体素子のダイ接着装置。  19. The semiconductor device according to claim 18, further comprising a pressurizer disposed between the die pick-up means and the unloader and pressurizing the second die bonded to the conductive substrate. Die bonding equipment.
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