SG10201802805RA - Workpiece dividing method - Google Patents
Workpiece dividing methodInfo
- Publication number
- SG10201802805RA SG10201802805RA SG10201802805RA SG10201802805RA SG10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA
- Authority
- SG
- Singapore
- Prior art keywords
- workpiece
- dividing
- starting point
- point region
- dividing method
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000001816 cooling Methods 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017079994A JP7217585B2 (ja) | 2017-04-13 | 2017-04-13 | 分割方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201802805RA true SG10201802805RA (en) | 2018-11-29 |
Family
ID=63679330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201802805RA SG10201802805RA (en) | 2017-04-13 | 2018-04-04 | Workpiece dividing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10580697B2 (ja) |
JP (1) | JP7217585B2 (ja) |
KR (1) | KR20180115622A (ja) |
CN (1) | CN108735588B (ja) |
DE (1) | DE102018205548B4 (ja) |
SG (1) | SG10201802805RA (ja) |
TW (1) | TWI745561B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7260295B2 (ja) * | 2018-12-21 | 2023-04-18 | 浜松ホトニクス株式会社 | 半導体対象物加熱装置 |
WO2020166583A1 (ja) * | 2019-02-12 | 2020-08-20 | 株式会社カネカ | 大判半導体基板および割断半導体基板の製造方法 |
JP7116026B2 (ja) * | 2019-09-05 | 2022-08-09 | 矢崎総業株式会社 | シャント抵抗式電流検出装置 |
TWI821679B (zh) * | 2020-08-25 | 2023-11-11 | 南韓商杰宜斯科技有限公司 | 基板處理裝置及基板處理方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0938960A (ja) * | 1995-07-28 | 1997-02-10 | Nec Kansai Ltd | ウェーハ割断方法 |
JP2001284292A (ja) * | 2000-03-31 | 2001-10-12 | Toyoda Gosei Co Ltd | 半導体ウエハーのチップ分割方法 |
JP4659301B2 (ja) * | 2001-09-12 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP2003181826A (ja) * | 2001-12-19 | 2003-07-02 | Sharp Corp | 分断装置および分断方法 |
US7005317B2 (en) * | 2003-10-27 | 2006-02-28 | Intel Corporation | Controlled fracture substrate singulation |
JP2006049591A (ja) * | 2004-08-05 | 2006-02-16 | Disco Abrasive Syst Ltd | ウエーハに貼着された接着フィルムの破断方法および破断装置 |
JP4630692B2 (ja) * | 2005-03-07 | 2011-02-09 | 株式会社ディスコ | レーザー加工方法 |
JP2009277982A (ja) * | 2008-05-16 | 2009-11-26 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
JP2011240644A (ja) * | 2010-05-20 | 2011-12-01 | Mitsuboshi Diamond Industrial Co Ltd | レーザ加工方法 |
CN102918376B (zh) * | 2010-05-28 | 2015-07-15 | 奥林巴斯株式会社 | 细胞分份装置、细胞分份系统及细胞分份方法 |
JP2013136077A (ja) * | 2011-12-28 | 2013-07-11 | Mitsuboshi Diamond Industrial Co Ltd | 分断装置 |
JP2013216513A (ja) * | 2012-04-05 | 2013-10-24 | Nippon Electric Glass Co Ltd | ガラスフィルムの切断方法及びガラスフィルム積層体 |
US8871613B2 (en) | 2012-06-18 | 2014-10-28 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
JP2014090011A (ja) * | 2012-10-29 | 2014-05-15 | Mitsuboshi Diamond Industrial Co Ltd | Ledパターン付き基板の加工方法 |
JP6223801B2 (ja) * | 2013-12-05 | 2017-11-01 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
JP6178724B2 (ja) * | 2013-12-26 | 2017-08-09 | 株式会社ディスコ | ウェーハの分割方法 |
JP2016040810A (ja) | 2014-08-13 | 2016-03-24 | 株式会社ディスコ | ブレーキング装置 |
JP2016092207A (ja) * | 2014-11-05 | 2016-05-23 | 株式会社ディスコ | フレームユニットの製造方法 |
JP6494360B2 (ja) * | 2015-03-25 | 2019-04-03 | 株式会社ディスコ | 拡張装置 |
JP6456766B2 (ja) * | 2015-05-08 | 2019-01-23 | 株式会社ディスコ | ウエーハの加工方法 |
US11186060B2 (en) | 2015-07-10 | 2021-11-30 | Corning Incorporated | Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same |
JP6506137B2 (ja) * | 2015-08-17 | 2019-04-24 | 株式会社ディスコ | 貼り合せ基板の加工方法 |
JP6755705B2 (ja) * | 2016-05-09 | 2020-09-16 | 株式会社ディスコ | レーザー加工装置 |
-
2017
- 2017-04-13 JP JP2017079994A patent/JP7217585B2/ja active Active
-
2018
- 2018-03-14 TW TW107108547A patent/TWI745561B/zh active
- 2018-04-04 SG SG10201802805RA patent/SG10201802805RA/en unknown
- 2018-04-05 US US15/946,293 patent/US10580697B2/en active Active
- 2018-04-08 CN CN201810304990.6A patent/CN108735588B/zh active Active
- 2018-04-10 KR KR1020180041627A patent/KR20180115622A/ko not_active Application Discontinuation
- 2018-04-12 DE DE102018205548.3A patent/DE102018205548B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
US10580697B2 (en) | 2020-03-03 |
CN108735588A (zh) | 2018-11-02 |
TW201842559A (zh) | 2018-12-01 |
DE102018205548A1 (de) | 2018-10-18 |
DE102018205548B4 (de) | 2024-06-20 |
TWI745561B (zh) | 2021-11-11 |
KR20180115622A (ko) | 2018-10-23 |
US20180301378A1 (en) | 2018-10-18 |
JP2018182078A (ja) | 2018-11-15 |
CN108735588B (zh) | 2024-02-20 |
JP7217585B2 (ja) | 2023-02-03 |
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