SG10201802805RA - Workpiece dividing method - Google Patents

Workpiece dividing method

Info

Publication number
SG10201802805RA
SG10201802805RA SG10201802805RA SG10201802805RA SG10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA SG 10201802805R A SG10201802805R A SG 10201802805RA
Authority
SG
Singapore
Prior art keywords
workpiece
dividing
starting point
point region
dividing method
Prior art date
Application number
SG10201802805RA
Inventor
Hattori Nao
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201802805RA publication Critical patent/SG10201802805RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)

Abstract

WORKPIECE DIVIDING METHOD There is provided a dividing method for dividing a plate-shaped workpiece. The dividing method includes: a starting point region forming step of forming a starting point region serving as a starting point of division along a planned dividing line set on the workpiece; a heating step of heating the workpiece after performing the starting point region forming step; a cooling step of cooling the workpiece after performing the heating step; a dividing step of dividing the workpiece along the starting point region by applying a force to the workpiece after performing the cooling step; and a sheet affixing step of affixing an expanding sheet to the workpiece before performing the dividing step; the dividing step applying the force to the workpiece by expanding the expanding sheet. (Figure 2A)
SG10201802805RA 2017-04-13 2018-04-04 Workpiece dividing method SG10201802805RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017079994A JP7217585B2 (en) 2017-04-13 2017-04-13 Division method

Publications (1)

Publication Number Publication Date
SG10201802805RA true SG10201802805RA (en) 2018-11-29

Family

ID=63679330

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201802805RA SG10201802805RA (en) 2017-04-13 2018-04-04 Workpiece dividing method

Country Status (7)

Country Link
US (1) US10580697B2 (en)
JP (1) JP7217585B2 (en)
KR (1) KR20180115622A (en)
CN (1) CN108735588B (en)
DE (1) DE102018205548B4 (en)
SG (1) SG10201802805RA (en)
TW (1) TWI745561B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7260295B2 (en) * 2018-12-21 2023-04-18 浜松ホトニクス株式会社 Semiconductor object heating device
WO2020166583A1 (en) * 2019-02-12 2020-08-20 株式会社カネカ Large semiconductor substrate and diced semiconductor substrate manufacturing method
JP7116026B2 (en) * 2019-09-05 2022-08-09 矢崎総業株式会社 Shunt resistor type current detector
TWI821679B (en) * 2020-08-25 2023-11-11 南韓商杰宜斯科技有限公司 Wafer processing apparatus and wafer processing method

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JPH0938960A (en) * 1995-07-28 1997-02-10 Nec Kansai Ltd Wafer dividing method
JP2001284292A (en) * 2000-03-31 2001-10-12 Toyoda Gosei Co Ltd Chip division method for semiconductor wafer
JP4659301B2 (en) * 2001-09-12 2011-03-30 浜松ホトニクス株式会社 Laser processing method
JP2003181826A (en) * 2001-12-19 2003-07-02 Sharp Corp Apparatus for dividing and method for dividing
US7005317B2 (en) * 2003-10-27 2006-02-28 Intel Corporation Controlled fracture substrate singulation
JP2006049591A (en) * 2004-08-05 2006-02-16 Disco Abrasive Syst Ltd Fracture method and fracture equipment of adhesive film stuck on wafer
JP4630692B2 (en) * 2005-03-07 2011-02-09 株式会社ディスコ Laser processing method
JP2009277982A (en) * 2008-05-16 2009-11-26 Mitsubishi Electric Corp Method and device for manufacturing semiconductor device
JP2011240644A (en) * 2010-05-20 2011-12-01 Mitsuboshi Diamond Industrial Co Ltd Laser processing method
CN102918376B (en) * 2010-05-28 2015-07-15 奥林巴斯株式会社 Cell sorter, cell sorting system, and cell sorting method
JP2013136077A (en) * 2011-12-28 2013-07-11 Mitsuboshi Diamond Industrial Co Ltd Splitting device
JP2013216513A (en) * 2012-04-05 2013-10-24 Nippon Electric Glass Co Ltd Method for cutting glass film and glass film lamination body
US8871613B2 (en) 2012-06-18 2014-10-28 Semiconductor Components Industries, Llc Semiconductor die singulation method
JP2014090011A (en) * 2012-10-29 2014-05-15 Mitsuboshi Diamond Industrial Co Ltd Processing method of substrate with led pattern
JP6223801B2 (en) * 2013-12-05 2017-11-01 株式会社ディスコ Optical device wafer processing method
JP6178724B2 (en) * 2013-12-26 2017-08-09 株式会社ディスコ Wafer dividing method
JP2016040810A (en) 2014-08-13 2016-03-24 株式会社ディスコ Breaking device
JP2016092207A (en) * 2014-11-05 2016-05-23 株式会社ディスコ Method of manufacturing frame unit
JP6494360B2 (en) * 2015-03-25 2019-04-03 株式会社ディスコ Expansion unit
JP6456766B2 (en) * 2015-05-08 2019-01-23 株式会社ディスコ Wafer processing method
KR102499697B1 (en) 2015-07-10 2023-02-14 코닝 인코포레이티드 Method for continuously manufacturing holes in a flexible substrate sheet and articles related thereto
JP6506137B2 (en) * 2015-08-17 2019-04-24 株式会社ディスコ Processing method of bonded substrate
JP6755705B2 (en) * 2016-05-09 2020-09-16 株式会社ディスコ Laser processing equipment

Also Published As

Publication number Publication date
JP7217585B2 (en) 2023-02-03
US20180301378A1 (en) 2018-10-18
DE102018205548A1 (en) 2018-10-18
DE102018205548B4 (en) 2024-06-20
TW201842559A (en) 2018-12-01
CN108735588B (en) 2024-02-20
CN108735588A (en) 2018-11-02
KR20180115622A (en) 2018-10-23
US10580697B2 (en) 2020-03-03
JP2018182078A (en) 2018-11-15
TWI745561B (en) 2021-11-11

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