SG10201801393SA - Semiconductor ingot inspecting method and apparatus, and laser processing apparatus - Google Patents

Semiconductor ingot inspecting method and apparatus, and laser processing apparatus

Info

Publication number
SG10201801393SA
SG10201801393SA SG10201801393SA SG10201801393SA SG10201801393SA SG 10201801393S A SG10201801393S A SG 10201801393SA SG 10201801393S A SG10201801393S A SG 10201801393SA SG 10201801393S A SG10201801393S A SG 10201801393SA SG 10201801393S A SG10201801393S A SG 10201801393SA
Authority
SG
Singapore
Prior art keywords
ingot
light
inspecting method
projected image
laser processing
Prior art date
Application number
SG10201801393SA
Other languages
English (en)
Inventor
Hirata Kazuya
Yamamoto Ryohei
Takahashi Kunimitsu
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201801393SA publication Critical patent/SG10201801393SA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/12—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to investigating the properties, e.g. the weldability, of materials
    • B23K31/125—Weld quality monitoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/10—Mirrors with curved faces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Quality & Reliability (AREA)
  • Thermal Sciences (AREA)
  • Biochemistry (AREA)
  • Signal Processing (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
SG10201801393SA 2017-03-01 2018-02-21 Semiconductor ingot inspecting method and apparatus, and laser processing apparatus SG10201801393SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017038435A JP6797481B2 (ja) 2017-03-01 2017-03-01 半導体インゴットの検査方法、検査装置及びレーザー加工装置

Publications (1)

Publication Number Publication Date
SG10201801393SA true SG10201801393SA (en) 2018-10-30

Family

ID=63170904

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201801393SA SG10201801393SA (en) 2017-03-01 2018-02-21 Semiconductor ingot inspecting method and apparatus, and laser processing apparatus

Country Status (8)

Country Link
US (1) US20180254223A1 (zh)
JP (1) JP6797481B2 (zh)
KR (1) KR102298614B1 (zh)
CN (1) CN108538740B (zh)
DE (1) DE102018202984B4 (zh)
MY (1) MY197791A (zh)
SG (1) SG10201801393SA (zh)
TW (1) TWI762571B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3435323A4 (en) * 2016-03-24 2019-04-10 Sony Corporation INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND RECORDING MEDIUM
JP7128067B2 (ja) * 2018-09-14 2022-08-30 株式会社ディスコ ウエーハの生成方法およびレーザー加工装置
US11897056B2 (en) 2018-10-30 2024-02-13 Hamamatsu Photonics K.K. Laser processing device and laser processing method
JP7285067B2 (ja) * 2018-10-30 2023-06-01 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
KR20240132114A (ko) * 2018-10-30 2024-09-02 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
CN109308707B (zh) * 2018-11-09 2021-08-24 河北工业大学 铝锭厚度非接触式在线测量方法
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
JP7237427B2 (ja) * 2019-05-14 2023-03-13 株式会社ディスコ ウェーハの製造方法、及びインゴットの分断装置
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7330771B2 (ja) 2019-06-14 2023-08-22 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置
JP7321888B2 (ja) * 2019-10-24 2023-08-07 株式会社ディスコ ＳｉＣインゴットの加工方法およびレーザー加工装置
CN112059422A (zh) * 2020-09-12 2020-12-11 北京航空航天大学 用于半导体晶圆研磨的激光加工设备
JP2024043868A (ja) 2022-09-20 2024-04-02 株式会社ディスコ 被加工物の検査方法及び検査装置
CN115971642A (zh) * 2022-12-30 2023-04-18 山东天岳先进科技股份有限公司 一种基于激光致裂的碳化硅剥离片及加工方法
CN115821394B (zh) * 2023-01-05 2023-05-26 西北电子装备技术研究所(中国电子科技集团公司第二研究所) 一种SiC晶片的检测系统及其检测方法
CN116000458B (zh) * 2023-03-27 2023-07-25 苏州长光华芯半导体激光创新研究院有限公司 一种半导体晶体解理设备及解理方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334844A (en) * 1993-04-05 1994-08-02 Space Systems/Loral, Inc. Optical illumination and inspection system for wafer and solar cell defects
JP2897754B2 (ja) * 1997-03-27 1999-05-31 日本電気株式会社 半導体装置の検査方法
JPH11281585A (ja) * 1998-03-26 1999-10-15 Nikon Corp 検査方法及び装置
JP2000009452A (ja) 1998-06-22 2000-01-14 Hitachi Tobu Semiconductor Ltd 表面の凹凸検査方法および装置
JP2000094221A (ja) 1998-09-24 2000-04-04 Toyo Advanced Technologies Co Ltd 放電式ワイヤソー
JP4707605B2 (ja) * 2006-05-16 2011-06-22 三菱電機株式会社 画像検査方法およびその方法を用いた画像検査装置
JP4065893B1 (ja) * 2006-12-04 2008-03-26 東京エレクトロン株式会社 欠陥検出装置、欠陥検出方法、情報処理装置、情報処理方法及びそのプログラム
JP2008216054A (ja) * 2007-03-05 2008-09-18 Hitachi High-Technologies Corp 被検査物の検査装置及び被検査物の検査方法
WO2008124397A1 (en) * 2007-04-03 2008-10-16 David Fishbaine Inspection system and method
JP2009090387A (ja) 2007-10-04 2009-04-30 Denso Corp 炭化珪素基板製造用ワイヤーソー装置
WO2009078231A1 (ja) * 2007-12-19 2009-06-25 Tokyo Seimitsu Co., Ltd. レーザーダイシング装置及びダイシング方法
US7773212B1 (en) * 2008-05-21 2010-08-10 Kla-Tencor Corporation Contemporaneous surface and edge inspection
US8741740B2 (en) * 2008-10-02 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US9019498B2 (en) * 2009-11-20 2015-04-28 National Institute Of Advanced Industrial Science And Technology Method for inspecting defects, inspected wafer or semiconductor device manufactured using the same, method for quality control of wafers or semiconductor devices and defect inspecting apparatus
KR101519476B1 (ko) * 2010-02-17 2015-05-14 한미반도체 주식회사 잉곳 검사 장치 및 방법
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9885662B2 (en) * 2012-07-06 2018-02-06 Bt Imaging Pty Ltd Methods for inspecting semiconductor wafers
US20130097727A1 (en) * 2012-11-08 2013-04-18 Laboratoire ASL Melon variety nun 96141 me
JP6395213B2 (ja) * 2014-09-26 2018-09-26 株式会社Ｓｃｒｅｅｎホールディングス 改質処理装置および改質処理方法
JP2016111114A (ja) 2014-12-04 2016-06-20 サンデンホールディングス株式会社 無線通信装置
JP6399913B2 (ja) 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
JP6395634B2 (ja) * 2015-02-09 2018-09-26 株式会社ディスコ ウエーハの生成方法
KR101716369B1 (ko) * 2015-10-19 2017-03-27 주식회사 이오테크닉스 레이저 가공 장비의 자동 검사 장치 및 방법

Also Published As

Publication number Publication date
TW201836033A (zh) 2018-10-01
DE102018202984A1 (de) 2018-09-06
KR102298614B1 (ko) 2021-09-03
MY197791A (en) 2023-07-14
CN108538740B (zh) 2024-02-02
KR20180100496A (ko) 2018-09-11
US20180254223A1 (en) 2018-09-06
CN108538740A (zh) 2018-09-14
JP2018147928A (ja) 2018-09-20
JP6797481B2 (ja) 2020-12-09
DE102018202984B4 (de) 2022-10-06
TWI762571B (zh) 2022-05-01

Similar Documents

Publication Publication Date Title
SG10201801393SA (en) Semiconductor ingot inspecting method and apparatus, and laser processing apparatus
WO2015098929A1 (ja) 表面欠陥検出方法及び表面欠陥検出装置
US9594021B2 (en) Apparatus of detecting transmittance of trench on infrared-transmittable material and method thereof
MX2017012962A (es) Metodo de inspeccion de superficie de cuerpo ceramico.
SG11201803354YA (en) Detection device and detection method
TWI471542B (zh) Tire shape inspection device and tire shape inspection method
JP5086970B2 (ja) 木材の外観検査装置、木材の外観検査方法
WO2017222671A3 (en) Depth image provision apparatus and method
WO2016062785A3 (en) Smart photonic imaging method and apparatus
RU2016114822A (ru) Способ контроля плотности энергии лазерного пучка посредством анализа изображения и соответствующее устройство
JPWO2016208606A1 (ja) 表面欠陥検出装置、表面欠陥検出方法、及び鋼材の製造方法
JP2007024674A (ja) 表面・表層検査装置、及び表面・表層検査方法
KR102287783B1 (ko) 에칭 장치 및 방법
TWI702388B (zh) 晶圓的檢查方法及檢查裝置
TWI456189B (zh) 基板檢查裝置、基板檢查方法及該基板檢查裝置之調整方法
WO2012149331A3 (en) Optical endpoint detection system
CN103760170A (zh) 一种基于机器视觉技术的烟包内衬缺损检测方法
TW201737303A (zh) 晶圓切單製程控制技術
US8709268B2 (en) Etching apparatus and methods
WO2014181625A1 (ja) 表面検査方法及び表面検査装置
JP5653370B2 (ja) 太陽電池セルのクラック検査方法
US9230337B2 (en) Analysis of the digital image of the internal surface of a tyre and processing of false measurement points
JP5978002B2 (ja) 検査方法及び外観検査装置
JP2014052339A (ja) 表面凹凸検査装置及び表面凹凸検査方法
JP2015200544A (ja) 表面凹凸検査装置及び表面凹凸検査方法