SG10201608964TA - Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface - Google Patents

Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Info

Publication number
SG10201608964TA
SG10201608964TA SG10201608964TA SG10201608964TA SG10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA
Authority
SG
Singapore
Prior art keywords
substrate surface
cleaning agent
semiconductor substrate
processing
semiconductor substrates
Prior art date
Application number
SG10201608964TA
Other languages
English (en)
Inventor
Hiromi Kawada
Hironori Mizuta
Tsuneaki Maesawa
Original Assignee
Wako Pure Chem Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chem Ind Ltd filed Critical Wako Pure Chem Ind Ltd
Publication of SG10201608964TA publication Critical patent/SG10201608964TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
SG10201608964TA 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface SG10201608964TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012103921 2012-04-27

Publications (1)

Publication Number Publication Date
SG10201608964TA true SG10201608964TA (en) 2016-12-29

Family

ID=49483316

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201406961PA SG11201406961PA (en) 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
SG10201608964TA SG10201608964TA (en) 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201406961PA SG11201406961PA (en) 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Country Status (8)

Country Link
US (1) US9803161B2 (ja)
EP (1) EP2843689A4 (ja)
JP (1) JP6128118B2 (ja)
KR (1) KR101966635B1 (ja)
CN (1) CN104254906B (ja)
SG (2) SG11201406961PA (ja)
TW (1) TWI589691B (ja)
WO (1) WO2013162020A1 (ja)

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JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
JP6436638B2 (ja) * 2014-03-27 2018-12-12 株式会社フジミインコーポレーテッド 研磨用組成物
JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP6343160B2 (ja) * 2014-03-28 2018-06-13 株式会社フジミインコーポレーテッド 研磨用組成物
KR102360224B1 (ko) * 2015-02-16 2022-03-14 삼성디스플레이 주식회사 세정용 조성물
WO2016170942A1 (ja) 2015-04-22 2016-10-27 Jsr株式会社 化学機械研磨用処理組成物、化学機械研磨方法および洗浄方法
KR101654900B1 (ko) * 2016-02-04 2016-09-07 주식회사 한국루베 저독성 화생방 제독제
KR102341136B1 (ko) * 2016-07-26 2021-12-21 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물 및 이것을 사용한 표면 처리 방법
CN106283092B (zh) * 2016-08-05 2018-06-19 宁波金特信钢铁科技有限公司 一种无氨氟化物盐电子基板清洗组合物的制备方法
JP6791680B2 (ja) * 2016-08-09 2020-11-25 株式会社フジミインコーポレーテッド 表面処理組成物およびこれを用いた洗浄方法
JP6697362B2 (ja) * 2016-09-23 2020-05-20 株式会社フジミインコーポレーテッド 表面処理組成物、ならびにこれを用いた表面処理方法および半導体基板の製造方法
JP7122258B2 (ja) * 2017-01-17 2022-08-19 株式会社ダイセル 半導体基板洗浄剤
WO2018163617A1 (ja) * 2017-03-08 2018-09-13 株式会社フジミインコーポレーテッド 表面処理組成物及びその製造方法、表面処理方法、並びに半導体基板の製造方法
WO2018169016A1 (ja) 2017-03-17 2018-09-20 三菱ケミカル株式会社 半導体デバイス用基板の洗浄剤組成物、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板
JP7028592B2 (ja) 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
JP6849564B2 (ja) 2017-09-19 2021-03-24 株式会社フジミインコーポレーテッド 表面処理組成物およびこれを用いた表面処理方法
US11060051B2 (en) * 2018-10-12 2021-07-13 Fujimi Incorporated Composition for rinsing or cleaning a surface with ceria particles adhered
CN110394694A (zh) * 2019-07-26 2019-11-01 浙江天马轴承集团有限公司 一种等离子尖端放电除毛刺加工方法
JP7220809B2 (ja) * 2019-12-26 2023-02-10 富士フイルム株式会社 洗浄液、洗浄方法
WO2021210308A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液、洗浄方法
CN113862088B (zh) * 2021-10-27 2023-11-10 福建省佑达环保材料有限公司 一种oled用掩膜版清洗剂
WO2023182142A1 (ja) * 2022-03-25 2023-09-28 富士フイルム株式会社 組成物、半導体素子の製造方法、半導体基板の洗浄方法

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JP5508158B2 (ja) * 2010-06-22 2014-05-28 富士フイルム株式会社 洗浄組成物、洗浄方法、及び、半導体装置の製造方法

Also Published As

Publication number Publication date
KR101966635B1 (ko) 2019-08-27
JP6128118B2 (ja) 2017-05-17
US20150140820A1 (en) 2015-05-21
TW201402806A (zh) 2014-01-16
CN104254906B (zh) 2017-07-21
SG11201406961PA (en) 2014-11-27
EP2843689A4 (en) 2015-05-13
JPWO2013162020A1 (ja) 2015-12-24
WO2013162020A1 (ja) 2013-10-31
US9803161B2 (en) 2017-10-31
EP2843689A1 (en) 2015-03-04
CN104254906A (zh) 2014-12-31
TWI589691B (zh) 2017-07-01
KR20150003217A (ko) 2015-01-08

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