SG10201605995SA - Polishing Composition And Method For Producing Semiconductor Substrate - Google Patents
Polishing Composition And Method For Producing Semiconductor SubstrateInfo
- Publication number
- SG10201605995SA SG10201605995SA SG10201605995SA SG10201605995SA SG10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA SG 10201605995S A SG10201605995S A SG 10201605995SA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor substrate
- polishing composition
- producing semiconductor
- producing
- polishing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012027495A JP6357296B2 (ja) | 2012-02-10 | 2012-02-10 | 研磨用組成物、及び半導体基板の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201605995SA true SG10201605995SA (en) | 2016-09-29 |
Family
ID=48947473
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201605995SA SG10201605995SA (en) | 2012-02-10 | 2013-02-05 | Polishing Composition And Method For Producing Semiconductor Substrate |
SG11201404587TA SG11201404587TA (en) | 2012-02-10 | 2013-02-05 | Polishing composition and method for producing semiconductor substrate |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404587TA SG11201404587TA (en) | 2012-02-10 | 2013-02-05 | Polishing composition and method for producing semiconductor substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US20150014579A1 (de) |
JP (1) | JP6357296B2 (de) |
KR (1) | KR101965926B1 (de) |
DE (1) | DE112013000912T5 (de) |
SG (2) | SG10201605995SA (de) |
TW (1) | TWI576416B (de) |
WO (1) | WO2013118710A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015019706A1 (ja) * | 2013-08-09 | 2015-02-12 | 株式会社フジミインコーポレーテッド | 研磨済研磨対象物の製造方法および研磨用組成物キット |
JP6295052B2 (ja) * | 2013-09-26 | 2018-03-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法およびシリコンウエハ製造方法 |
JP6228032B2 (ja) * | 2014-02-25 | 2017-11-08 | 株式会社フジミインコーポレーテッド | 半導体基板を連続的に製造する方法 |
JP6246638B2 (ja) * | 2014-03-24 | 2017-12-13 | 株式会社フジミインコーポレーテッド | 研磨方法およびそれに用いられる研磨用組成物 |
JP6357356B2 (ja) | 2014-06-09 | 2018-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP6435689B2 (ja) * | 2014-07-25 | 2018-12-12 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
US9593261B2 (en) * | 2015-02-04 | 2017-03-14 | Asahi Glass Company, Limited | Polishing agent, polishing method, and liquid additive for polishing |
KR102594932B1 (ko) * | 2015-05-08 | 2023-10-27 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
CN104999365B (zh) * | 2015-06-16 | 2018-02-16 | 东莞市中微纳米科技有限公司 | 蓝宝石晶片研磨抛光方法 |
CN106736875B (zh) * | 2016-11-30 | 2019-01-11 | 江苏师范大学 | 一种蓝宝石整流罩的加工方法 |
JP6879798B2 (ja) * | 2017-03-30 | 2021-06-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物および研磨方法 |
EP3605588A4 (de) * | 2017-03-31 | 2021-01-13 | Fujimi Incorporated | Polierzusammensetzung |
SG11202005839VA (en) * | 2017-12-22 | 2020-07-29 | Nissan Chemical Corp | Composition for polishing for use in eliminating protrusion in periphery of laser mark |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2714411B2 (ja) | 1988-12-12 | 1998-02-16 | イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー | ウェハーのファイン研摩用組成物 |
JP2004128069A (ja) | 2002-09-30 | 2004-04-22 | Fujimi Inc | 研磨用組成物及びそれを用いた研磨方法 |
WO2005029563A1 (ja) | 2003-09-24 | 2005-03-31 | Nippon Chemical Industrial Co.,Ltd. | シリコンウエハ研磨用組成物および研磨方法 |
JP5204960B2 (ja) * | 2006-08-24 | 2013-06-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
KR101431299B1 (ko) * | 2007-03-26 | 2014-08-20 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체, 및 반도체 장치의 화학 기계 연마 방법 |
JP5236283B2 (ja) | 2007-12-28 | 2013-07-17 | 花王株式会社 | ハードディスク基板用研磨液組成物 |
JP2011171689A (ja) * | 2009-07-07 | 2011-09-01 | Kao Corp | シリコンウエハ用研磨液組成物 |
JP5759904B2 (ja) * | 2010-01-29 | 2015-08-05 | 株式会社フジミインコーポレーテッド | 半導体ウェーハの再生方法及び研磨用組成物 |
DE112011101518B4 (de) * | 2010-04-30 | 2019-05-09 | Sumco Corporation | Verfahren zum Polieren von Siliziumwafern |
US20130109180A1 (en) * | 2010-07-08 | 2013-05-02 | Sumco Corporation | Method for polishing silicon wafer, and polishing solution for use in the method |
-
2012
- 2012-02-10 JP JP2012027495A patent/JP6357296B2/ja active Active
-
2013
- 2013-02-05 KR KR1020147024808A patent/KR101965926B1/ko active IP Right Grant
- 2013-02-05 DE DE201311000912 patent/DE112013000912T5/de active Pending
- 2013-02-05 SG SG10201605995SA patent/SG10201605995SA/en unknown
- 2013-02-05 WO PCT/JP2013/052585 patent/WO2013118710A1/ja active Application Filing
- 2013-02-05 US US14/376,547 patent/US20150014579A1/en not_active Abandoned
- 2013-02-05 SG SG11201404587TA patent/SG11201404587TA/en unknown
- 2013-02-06 TW TW102104556A patent/TWI576416B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2013118710A1 (ja) | 2013-08-15 |
JP2013165173A (ja) | 2013-08-22 |
SG11201404587TA (en) | 2014-10-30 |
KR20140130156A (ko) | 2014-11-07 |
TW201343884A (zh) | 2013-11-01 |
JP6357296B2 (ja) | 2018-07-11 |
KR101965926B1 (ko) | 2019-04-04 |
US20150014579A1 (en) | 2015-01-15 |
DE112013000912T5 (de) | 2014-11-06 |
TWI576416B (zh) | 2017-04-01 |
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