SE9703506D0 - Diodanordning - Google Patents
DiodanordningInfo
- Publication number
- SE9703506D0 SE9703506D0 SE9703506A SE9703506A SE9703506D0 SE 9703506 D0 SE9703506 D0 SE 9703506D0 SE 9703506 A SE9703506 A SE 9703506A SE 9703506 A SE9703506 A SE 9703506A SE 9703506 D0 SE9703506 D0 SE 9703506D0
- Authority
- SE
- Sweden
- Prior art keywords
- diode device
- field effect
- effect transistor
- gate
- threshold voltage
- Prior art date
Links
- 230000005669 field effect Effects 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
- H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9703506A SE512555C2 (sv) | 1997-09-29 | 1997-09-29 | Diodanordning med liten eller försumbar tröskelspänning och användning av sådan diodanordning i en frekvensblandare eller i en signaldetektor |
US09/161,231 US6097247A (en) | 1997-09-29 | 1998-09-28 | Low threshold voltage diode-connected FET |
PCT/SE1998/001728 WO1999017376A2 (en) | 1997-09-29 | 1998-09-29 | Diode device having a low threshold voltage |
AU92913/98A AU9291398A (en) | 1997-09-29 | 1998-09-29 | Diode device having a low threshold voltage |
EP98945737A EP1019968B1 (en) | 1997-09-29 | 1998-09-29 | Method for manufacturing a diode device having a low threshold voltage |
DE69840574T DE69840574D1 (de) | 1997-09-29 | 1998-09-29 | Verfahren zum herstellen einer diodenanordnung mit niedriger schwellenspannung |
KR1020007003282A KR20010030745A (ko) | 1997-09-29 | 1998-09-29 | 저임계 전압을 갖는 다이오드 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9703506A SE512555C2 (sv) | 1997-09-29 | 1997-09-29 | Diodanordning med liten eller försumbar tröskelspänning och användning av sådan diodanordning i en frekvensblandare eller i en signaldetektor |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9703506D0 true SE9703506D0 (sv) | 1997-09-29 |
SE9703506L SE9703506L (sv) | 1999-03-30 |
SE512555C2 SE512555C2 (sv) | 2000-04-03 |
Family
ID=20408405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9703506A SE512555C2 (sv) | 1997-09-29 | 1997-09-29 | Diodanordning med liten eller försumbar tröskelspänning och användning av sådan diodanordning i en frekvensblandare eller i en signaldetektor |
Country Status (7)
Country | Link |
---|---|
US (1) | US6097247A (sv) |
EP (1) | EP1019968B1 (sv) |
KR (1) | KR20010030745A (sv) |
AU (1) | AU9291398A (sv) |
DE (1) | DE69840574D1 (sv) |
SE (1) | SE512555C2 (sv) |
WO (1) | WO1999017376A2 (sv) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050191985A1 (en) * | 2004-02-27 | 2005-09-01 | Bos Thomas A. | Diode ring configuration for harmonic diode mixers |
JP2011259192A (ja) * | 2010-06-09 | 2011-12-22 | Sony Corp | マルチバイブレータ回路および電圧変換回路 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4418292A (en) * | 1980-05-28 | 1983-11-29 | Raytheon Company | Logic gate having a noise immunity circuit |
US4410902A (en) * | 1981-03-23 | 1983-10-18 | The United States Of America As Represented By The Secretary Of The Army | Planar doped barrier semiconductor device |
US4839709A (en) * | 1985-07-12 | 1989-06-13 | Hewlett-Packard Company | Detector and mixer diode operative at zero bias voltage |
JPH04356799A (ja) * | 1990-08-29 | 1992-12-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2978226B2 (ja) * | 1990-09-26 | 1999-11-15 | 三菱電機株式会社 | 半導体集積回路 |
GB2259376A (en) * | 1991-08-24 | 1993-03-10 | Motorola Gmbh | Voltage and current reference source |
US5298807A (en) * | 1991-12-23 | 1994-03-29 | Intel Corporation | Buffer circuitry for transferring signals from TTL circuitry to dual range CMOS circuitry |
WO1993019490A1 (en) * | 1992-03-23 | 1993-09-30 | Rohm Co., Ltd. | Voltage regulating diode |
US5339272A (en) * | 1992-12-21 | 1994-08-16 | Intel Corporation | Precision voltage reference |
JP3184065B2 (ja) * | 1994-07-25 | 2001-07-09 | セイコーインスツルメンツ株式会社 | 半導体集積回路装置及び電子機器 |
US5550699A (en) * | 1994-08-15 | 1996-08-27 | Hewlett-Packard Co. | Hot plug tolerant ESD protection for an IC |
US5805500A (en) * | 1997-06-18 | 1998-09-08 | Sgs-Thomson Microelectronics S.R.L. | Circuit and method for generating a read reference signal for nonvolatile memory cells |
-
1997
- 1997-09-29 SE SE9703506A patent/SE512555C2/sv not_active IP Right Cessation
-
1998
- 1998-09-28 US US09/161,231 patent/US6097247A/en not_active Expired - Lifetime
- 1998-09-29 DE DE69840574T patent/DE69840574D1/de not_active Expired - Lifetime
- 1998-09-29 AU AU92913/98A patent/AU9291398A/en not_active Abandoned
- 1998-09-29 KR KR1020007003282A patent/KR20010030745A/ko not_active Application Discontinuation
- 1998-09-29 EP EP98945737A patent/EP1019968B1/en not_active Expired - Lifetime
- 1998-09-29 WO PCT/SE1998/001728 patent/WO1999017376A2/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US6097247A (en) | 2000-08-01 |
AU9291398A (en) | 1999-04-23 |
WO1999017376A2 (en) | 1999-04-08 |
SE9703506L (sv) | 1999-03-30 |
EP1019968B1 (en) | 2009-02-18 |
DE69840574D1 (de) | 2009-04-02 |
SE512555C2 (sv) | 2000-04-03 |
WO1999017376A3 (en) | 1999-06-17 |
KR20010030745A (ko) | 2001-04-16 |
EP1019968A2 (en) | 2000-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |