DE59914942D1 - Mos-feldeffekttransistor mit hilfselektrode - Google Patents
Mos-feldeffekttransistor mit hilfselektrodeInfo
- Publication number
- DE59914942D1 DE59914942D1 DE59914942T DE59914942T DE59914942D1 DE 59914942 D1 DE59914942 D1 DE 59914942D1 DE 59914942 T DE59914942 T DE 59914942T DE 59914942 T DE59914942 T DE 59914942T DE 59914942 D1 DE59914942 D1 DE 59914942D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- auxiliary electrode
- mos field
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19854915A DE19854915C2 (de) | 1998-11-27 | 1998-11-27 | MOS-Feldeffekttransistor mit Hilfselektrode |
| PCT/DE1999/003542 WO2000033385A1 (de) | 1998-11-27 | 1999-11-04 | Mos-feldeffekttransistor mit hilfselektrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE59914942D1 true DE59914942D1 (de) | 2009-02-12 |
Family
ID=7889314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE59914942T Expired - Lifetime DE59914942D1 (de) | 1998-11-27 | 1999-11-04 | Mos-feldeffekttransistor mit hilfselektrode |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3859969B2 (de) |
| KR (1) | KR100401278B1 (de) |
| AT (1) | ATE419651T1 (de) |
| DE (1) | DE59914942D1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677641B2 (en) * | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| WO2009110229A1 (ja) * | 2008-03-07 | 2009-09-11 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
-
1999
- 1999-11-04 DE DE59914942T patent/DE59914942D1/de not_active Expired - Lifetime
- 1999-11-04 JP JP2000585937A patent/JP3859969B2/ja not_active Expired - Fee Related
- 1999-11-04 AT AT99963211T patent/ATE419651T1/de not_active IP Right Cessation
- 1999-11-04 KR KR10-2000-7008206A patent/KR100401278B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010034433A (ko) | 2001-04-25 |
| KR100401278B1 (ko) | 2003-10-17 |
| JP3859969B2 (ja) | 2006-12-20 |
| JP2002531952A (ja) | 2002-09-24 |
| ATE419651T1 (de) | 2009-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |