SE9102844L - Monolitisk optokopplare - Google Patents
Monolitisk optokopplareInfo
- Publication number
- SE9102844L SE9102844L SE9102844A SE9102844A SE9102844L SE 9102844 L SE9102844 L SE 9102844L SE 9102844 A SE9102844 A SE 9102844A SE 9102844 A SE9102844 A SE 9102844A SE 9102844 L SE9102844 L SE 9102844L
- Authority
- SE
- Sweden
- Prior art keywords
- diode
- monolitic
- recorder
- photo
- light
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9102844A SE469204B (sv) | 1991-10-01 | 1991-10-01 | Monolitisk optokopplare |
PCT/SE1992/000580 WO1993007647A1 (en) | 1991-10-01 | 1992-08-24 | A monolithic optocoupler |
AU26975/92A AU2697592A (en) | 1991-10-01 | 1992-08-24 | A monolithic optocoupler |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9102844A SE469204B (sv) | 1991-10-01 | 1991-10-01 | Monolitisk optokopplare |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9102844D0 SE9102844D0 (sv) | 1991-10-01 |
SE9102844L true SE9102844L (sv) | 1993-04-02 |
SE469204B SE469204B (sv) | 1993-05-24 |
Family
ID=20383878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9102844A SE469204B (sv) | 1991-10-01 | 1991-10-01 | Monolitisk optokopplare |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2697592A (sv) |
SE (1) | SE469204B (sv) |
WO (1) | WO1993007647A1 (sv) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2344455A (en) * | 1998-12-01 | 2000-06-07 | Mitel Semiconductor Ab | Semiconductor device with low parasitic capacitance |
GB2426628B (en) * | 2004-02-05 | 2008-04-02 | Otkrytoe Aktsionernoe Obschest | Photoluminescent radiator, semiconductor photocell and optron based thereon |
RU2642132C1 (ru) * | 2016-07-20 | 2018-01-24 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Новосибирский Государственный Технический Университет" | Оптоэлектронное устройство |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3881113A (en) * | 1973-12-26 | 1975-04-29 | Ibm | Integrated optically coupled light emitter and sensor |
US4021834A (en) * | 1975-12-31 | 1977-05-03 | The United States Of America As Represented By The Secretary Of The Army | Radiation-resistant integrated optical signal communicating device |
US4275404A (en) * | 1979-10-05 | 1981-06-23 | Bell Telephone Laboratories, Incorporated | Monolithic opto-isolator |
SE461491B (sv) * | 1987-12-02 | 1990-02-19 | Asea Ab | Monolitisk optokopplare |
-
1991
- 1991-10-01 SE SE9102844A patent/SE469204B/sv not_active IP Right Cessation
-
1992
- 1992-08-24 AU AU26975/92A patent/AU2697592A/en not_active Abandoned
- 1992-08-24 WO PCT/SE1992/000580 patent/WO1993007647A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
AU2697592A (en) | 1993-05-03 |
WO1993007647A1 (en) | 1993-04-15 |
SE469204B (sv) | 1993-05-24 |
SE9102844D0 (sv) | 1991-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES2034234T3 (es) | Conjunto termoconductor. | |
DE68916389D1 (de) | Auf einer Halbleiterschicht gebildeter MOS-Feldeffekttransistor auf einem isolierenden Substrat. | |
DE3683263D1 (de) | Halbleiteranordnung mit einer silizium-auf-isolator-struktur. | |
DE69029340D1 (de) | Halbleiterlaser mit fünfelementigem Verbindungshalbleiter | |
EP0473796A4 (en) | Semiconductor device having a plurality of chips | |
EP0843159A3 (en) | Opto-electronic scale-reading apparatus | |
DE68920249D1 (de) | Passives optisches Bauelement. | |
DE69009409D1 (de) | Halbleiter-Heterostrukturen. | |
KR920015540A (ko) | 광반도체장치 | |
DE69105220D1 (de) | Fotoelektronen emittierendes Bauteil und Anwendungen hierfür. | |
DE69101818D1 (de) | Halbleitersubstrat-Ätzgerät. | |
KR920003566A (ko) | 반도체 발광장치 | |
DE3851332D1 (de) | Kapazitiv rückgekoppelter gaas-transimpedanzverstärker. | |
DE3785126D1 (de) | Impatt-diode. | |
DE68922117D1 (de) | Halbleiterphotodiode. | |
SE9102844L (sv) | Monolitisk optokopplare | |
DE68918799D1 (de) | Verbindungshalbleitersubstrat. | |
DE59202502D1 (de) | Durchstimmbarer Halbleiterlaser auf semiisolierendem Substrat. | |
DE3581333D1 (de) | Lichtemittierende halbleitervorrichtung. | |
FR2684498B1 (fr) | Laser a semiconducteurs a reaction repartie. | |
DE69113471D1 (de) | Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode. | |
DE3787848D1 (de) | Halbleiterdiode. | |
DE3668716D1 (de) | Halbleitersubstratvorspannungsgenerator. | |
DE69203356D1 (de) | Arbeitsfläche geringer Verunreinigung zur Herstellung von Silicium der Halbleitergeräte. | |
DE3789713D1 (de) | Halbleiter-Lichtemissionsvorrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAL | Patent in force |
Ref document number: 9102844-9 Format of ref document f/p: F |
|
NUG | Patent has lapsed |