KR920015540A - 광반도체장치 - Google Patents

광반도체장치 Download PDF

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Publication number
KR920015540A
KR920015540A KR1019920000364A KR920000364A KR920015540A KR 920015540 A KR920015540 A KR 920015540A KR 1019920000364 A KR1019920000364 A KR 1019920000364A KR 920000364 A KR920000364 A KR 920000364A KR 920015540 A KR920015540 A KR 920015540A
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KR
South Korea
Prior art keywords
optical semiconductor
semiconductor device
optical
package
heat sink
Prior art date
Application number
KR1019920000364A
Other languages
English (en)
Other versions
KR960004098B1 (ko
Inventor
노부오 시게노
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR920015540A publication Critical patent/KR920015540A/ko
Application granted granted Critical
Publication of KR960004098B1 publication Critical patent/KR960004098B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Abstract

내용 없음

Description

광반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 광반도체장치의 단면도, 제2도는 제1도에 도시한 실시예에서의 히트싱크스템 근방의 상세한 구성을 나타낸 단면도, 제3도는 본 발명의 다른 실시예에 따른 광반도체 장치를 위에서 본 단면도.

Claims (3)

  1. 히트싱크(2)상에 탑재된 광반도체발광소자(1)와, 이 광반도체장치소자(1)와 히트싱크(2)를 지지하면서 덮는 제1패키지(4,5) 및, 이 제1패키지(4,5)전체를 지지하여 덮으면서 외부출력용 리드(13)를 갖춘 제2패키지(10)를 구비한 광반도체장치에 있어서, 상기 제1패키지(4,5)의 일부가 일단이 상기 광반도체발광소자(1) 및 상기 히트싱크(2)에 접속되는 한편 다른 단은 상기 출력용 리드(13)에 접속된 도체패턴을 갖는 적층세라믹기판(3)으로 치환되어 있는 것을 특징으로 하는 광반도체장치.
  2. 제1항에 있어서, 상기 히트싱크(2)상에 광반도체발광소자(1)가 탑재되고, 상기 제1패키지(4,5)에는 모니터용 수광소자(7)와 광출력용 렌즈(14) 및 광섬유(15)가 지지되며, 상기 제2패키지(10)에는 상기 광섬유(15)가 지지되어 있는 것을 특징으로 하는 광반도체장치.
  3. 제1항에 있어서, 상기 적층세라믹기판(3)은 상기 외부리드(13)의 도출방향과 상기 광섬유(15)의 도출방향이 거의 직각을 이루도록 도출방향을 변환시키는 도체패턴을 갖는 것을 특징으로 하는 광반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920000364A 1991-01-14 1992-01-14 광반도체장치 KR960004098B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-002731 1991-01-14
JP273191A JP2695995B2 (ja) 1991-01-14 1991-01-14 光半導体装置

Publications (2)

Publication Number Publication Date
KR920015540A true KR920015540A (ko) 1992-08-27
KR960004098B1 KR960004098B1 (ko) 1996-03-26

Family

ID=11537467

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920000364A KR960004098B1 (ko) 1991-01-14 1992-01-14 광반도체장치

Country Status (3)

Country Link
US (1) US5227646A (ko)
JP (1) JP2695995B2 (ko)
KR (1) KR960004098B1 (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2763980B2 (ja) * 1992-01-14 1998-06-11 富士通株式会社 光半導体モジュール
US5679979A (en) * 1996-05-21 1997-10-21 Weingand; Christopher Dirk Surface mount package with heat transfer feature
US6369924B1 (en) 1998-04-20 2002-04-09 Stratos Lightwave, Inc. Optical transceiver with enhanced shielding and related methods
US6577656B2 (en) * 2001-03-13 2003-06-10 Finisar Corporation System and method of packaging a laser/detector
US6715936B2 (en) * 2002-01-22 2004-04-06 Megasense, Inc. Photonic component package and method of packaging
KR20030087824A (ko) * 2002-05-10 2003-11-15 주식회사일진 소형 형상 요소형 광모듈
KR20040027162A (ko) * 2002-09-27 2004-04-01 주식회사일진 광통신용 광모듈
US7350987B2 (en) * 2002-09-30 2008-04-01 Intel Corporation Optical package fiber pass-through to reduce curvature of optical fiber during threading
US6860652B2 (en) * 2003-05-23 2005-03-01 Intel Corporation Package for housing an optoelectronic assembly
US7255494B2 (en) * 2003-05-23 2007-08-14 Intel Corporation Low-profile package for housing an optoelectronic assembly
US6883978B2 (en) * 2003-06-26 2005-04-26 Matsushita Electric Industrial Co., Ltd. Low cost package design for fiber coupled optical component
US7284913B2 (en) 2003-07-14 2007-10-23 Matsushita Electric Industrial Co., Ltd. Integrated fiber attach pad for optical package
US7410088B2 (en) * 2003-09-05 2008-08-12 Matsushita Electric Industrial, Co., Ltd. Solder preform for low heat stress laser solder attachment
KR101022768B1 (ko) * 2003-11-07 2011-03-17 삼성전자주식회사 반도체 레이저 다이오드가 장착된 실리콘 옵티컬 벤치구조물
US7021838B2 (en) 2003-12-16 2006-04-04 Matsushita Electric Industrial Co., Ltd. Optimizing alignment of an optical fiber to an optical output port
US7119373B2 (en) * 2004-01-23 2006-10-10 Exalos Ag Sled
US7263260B2 (en) * 2005-03-14 2007-08-28 Matsushita Electric Industrial Co., Ltd. Low cost, high precision multi-point optical component attachment
US7302192B2 (en) * 2005-04-28 2007-11-27 Menara Networks Methods of spread-pulse modulation and nonlinear time domain equalization for fiber optic communication channels
US7290943B2 (en) * 2005-08-12 2007-11-06 Murry Stefan J Modular laser package system and associated methods
US7478955B2 (en) 2005-08-12 2009-01-20 Applied Optoelectronics, Inc. Modular laser package system
JP4872663B2 (ja) * 2006-12-28 2012-02-08 株式会社日立製作所 接合用材料及び接合方法
US8811439B2 (en) 2009-11-23 2014-08-19 Seminex Corporation Semiconductor laser assembly and packaging system
US8821042B2 (en) * 2011-07-04 2014-09-02 Sumitomo Electic Industries, Ltd. Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount
US9500808B2 (en) * 2012-05-09 2016-11-22 The Boeing Company Ruggedized photonic crystal sensor packaging

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559786A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Light semiconductor device
US4399453A (en) * 1981-03-23 1983-08-16 Motorola, Inc. Low thermal impedance plastic package
US4752109A (en) * 1986-09-02 1988-06-21 Amp Incorporated Optoelectronics package for a semiconductor laser
JPS6370589A (ja) * 1986-09-12 1988-03-30 Nec Corp 半導体レ−ザモジユ−ル
JPS6381988A (ja) * 1986-09-26 1988-04-12 Hitachi Tobu Semiconductor Ltd 光電子装置
US5068865A (en) * 1988-06-09 1991-11-26 Nec Corporation Semiconductor laser module

Also Published As

Publication number Publication date
JPH04241474A (ja) 1992-08-28
JP2695995B2 (ja) 1998-01-14
KR960004098B1 (ko) 1996-03-26
US5227646A (en) 1993-07-13

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