KR930006991A - 신호 전송 회로 - Google Patents

신호 전송 회로 Download PDF

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Publication number
KR930006991A
KR930006991A KR1019920016878A KR920016878A KR930006991A KR 930006991 A KR930006991 A KR 930006991A KR 1019920016878 A KR1019920016878 A KR 1019920016878A KR 920016878 A KR920016878 A KR 920016878A KR 930006991 A KR930006991 A KR 930006991A
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KR
South Korea
Prior art keywords
light emitting
emitting means
transmission circuit
port
signal transmission
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Application number
KR1019920016878A
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English (en)
Other versions
KR950014287B1 (ko
Inventor
히로노부 미야사카
Original Assignee
사토 후미오
가부시키가이샤 도시바
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Publication of KR930006991A publication Critical patent/KR930006991A/ko
Application granted granted Critical
Publication of KR950014287B1 publication Critical patent/KR950014287B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
    • H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/42—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Communication System (AREA)

Abstract

본 발명은, 외부회로를 필요로 하지 않고서 노이즈내량을 대폭 향상시킨 자기자유지기능을 갖춘 신호전송회로에 관한 것이다.
본 발명은, 제1포트 다이오드와 제1포트 트랜지스터로 이루어진 제1포토 커플러와, 제2포트 다이오드와 제2포토트랜지스터로 이루어진 제2포토 커플러를 구비하고, 상기 제1포트 트랜지스터와 상기 제2포트 다이오드가 고위전원과 접지사이에 직렬접속되어 직렬접속점을 입력단자로 하며, 상기 제1포토 다이오드와 상기 제2포트 트랜지스터가 고위전원과 접지사이에 접촉되면서 상기 제1포트 다이오드에 구동제어되는 부하가 접속되어 구성된다.

Description

신호 전송 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 신호전송회로의 구성을 나타낸 도면,
제2도는 본 발명의 제2실시예에 따른 신호전송회로의 구성을 나타낸 도면,
제3도는 본 발명의 제3실시예에 따른 신호전송회로의 구성을 나타낸 도면,
제4도는 제1도 및 제2도에 나타낸 회로구성에서의 패키지의 구조를 나타낸 도면,
제5도는 제3도에 나타낸 회로구성에서의 패키지의 구조를 나타낸 도면.

Claims (4)

  1. 전기신호를 광신호로 변환시키는 제1발광수단(13,21)의 광신호를 인가받아 전기신호를 변환시키는 제1수광 수단(14)으로 이루어진 제1포트 커플러(11)와, 전기신호를 광신호로 변환시키는 제2발광수단(15)과 이 제2발광수단(15)의 광신호를 인가받아 전기신호로 변환시키는 제2수광수단(16,20,22)으로 이루어진 제2포트 커플러(12)를 구비하고, 상기 제1수광수단(14)과 상기 제2발광수단(15)이 고위전원과 저위전원사이에 직렬접속되어 직렬접속접을 입력단자(17)로 하며, 상기 제1발광수단(13,21)과 상기 제2수광수단(16,20,22)이 고위전원과 저전위전원사이에 접속되면서 상기 제1발광수단(13,21)에 의해 구동제어되는 부하(19)가 접속된 것을 특징으로 하는 신호전송회로.
  2. 제1항에 있어서, 상기 제1발광수단(13,21) 및 제2발광수단(15)이 포토 다이오드로 이루어지고, 상기 제1수광수단(14) 및 제2수광수단(16,20,22)이 포토 트랜지스터로 이루어진 것을 특징으로 하는 신호전송회로.
  3. 제1항에 있어서, 상기 제1발광수단(21)이 상호 역방향으로 병렬접속된 포토 다이오드로 이루어지고, 상기 제2수광수단(22)이 포토 MOSFET의 이루어진 것을 특징으로 하는 신호전송회로.
  4. 제1한 내지 제3항에 있어서, 상기 신호전송회로는 1개의 패캐지에 수납되도록 된 것을 특징으로 하는 신호전송회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920016878A 1991-09-17 1992-09-17 신호전송회로 KR950014287B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23591491A JP2974469B2 (ja) 1991-09-17 1991-09-17 信号伝送回路
JP91-235914 1991-09-17

Publications (2)

Publication Number Publication Date
KR930006991A true KR930006991A (ko) 1993-04-22
KR950014287B1 KR950014287B1 (ko) 1995-11-24

Family

ID=16993113

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920016878A KR950014287B1 (ko) 1991-09-17 1992-09-17 신호전송회로

Country Status (3)

Country Link
US (1) US5256882A (ko)
JP (1) JP2974469B2 (ko)
KR (1) KR950014287B1 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753928A (en) * 1993-09-30 1998-05-19 Siemens Components, Inc. Monolithic optical emitter-detector
US5389776A (en) * 1993-11-22 1995-02-14 At&T Corp. FET-based optical receiver
KR100485053B1 (ko) * 1995-06-06 2005-04-27 옵토바이오닉스 코포레이션 망막 자극 시스템
US5895415A (en) * 1995-06-06 1999-04-20 Optobionics Corporation Multi-phasic microphotodiode retinal implant and adaptive imaging retinal stimulation system
US5837995A (en) * 1996-11-25 1998-11-17 Alan Y. Chow Wavelength-controllable voltage-phase photodiode optoelectronic switch ("opsistor")
US6389317B1 (en) * 2000-03-31 2002-05-14 Optobionics Corporation Multi-phasic microphotodetector retinal implant with variable voltage and current capability
US20040039401A1 (en) * 2000-03-31 2004-02-26 Chow Alan Y. Implant instrument
US6427087B1 (en) * 2000-05-04 2002-07-30 Optobionics Corporation Artificial retina device with stimulating and ground return electrodes disposed on opposite sides of the neuroretina and method of attachment
US6574022B2 (en) 2001-03-19 2003-06-03 Alan Y. Chow Integral differential optical signal receiver
US7037943B2 (en) 2001-04-10 2006-05-02 Optobionics Corporation Retinal treatment method
US20050033202A1 (en) * 2001-06-29 2005-02-10 Chow Alan Y. Mechanically activated objects for treatment of degenerative retinal disease
US7031776B2 (en) * 2001-06-29 2006-04-18 Optobionics Methods for improving damaged retinal cell function
US20050004625A1 (en) * 2001-06-29 2005-01-06 Chow Alan Y. Treatment of degenerative retinal disease via electrical stimulation of surface structures
US6943578B1 (en) 2004-03-31 2005-09-13 International Business Machines Corporation Method and application of PICA (picosecond imaging circuit analysis) for high current pulsed phenomena
EP1768225B1 (de) * 2005-09-23 2014-07-02 Metabowerke GmbH Akkupack, insbesondere für die Verwendung bei Elektrohandwerkzeuggeräten, Ladegerät und System aus Akkupack und Ladegerät
CN101211329B (zh) * 2006-12-26 2011-05-04 鸿富锦精密工业（深圳）有限公司 串行端口连接电路
TWI420340B (zh) * 2007-01-05 2013-12-21 Hon Hai Prec Ind Co Ltd 串列埠連接電路
DE102011015408B4 (de) * 2011-03-29 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Betrieb eines optoelektronischen Bauelements
JP2014187075A (ja) 2013-03-21 2014-10-02 Toshiba Corp 光結合装置
CN109213275B (zh) * 2018-11-26 2020-10-02 英业达科技有限公司 笔记本电脑
CN110554729B (zh) * 2019-10-09 2024-04-12 无锡气动技术研究所有限公司 阀岛总线单线数据传输的控制电路和控制方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889887A (ja) * 1981-11-25 1983-05-28 Univ Tohoku 半導体光機能デバイス
US4972089A (en) * 1989-04-03 1990-11-20 Motorola Inc. Single package electro-optic transmitter-receiver
US5189307A (en) * 1992-03-13 1993-02-23 Empi, Inc. Isolated current mirror with optical insulator generating feedback signal

Also Published As

Publication number Publication date
JPH0575161A (ja) 1993-03-26
KR950014287B1 (ko) 1995-11-24
US5256882A (en) 1993-10-26
JP2974469B2 (ja) 1999-11-10

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