DE3851332D1 - Kapazitiv rückgekoppelter gaas-transimpedanzverstärker. - Google Patents

Kapazitiv rückgekoppelter gaas-transimpedanzverstärker.

Info

Publication number
DE3851332D1
DE3851332D1 DE3851332T DE3851332T DE3851332D1 DE 3851332 D1 DE3851332 D1 DE 3851332D1 DE 3851332 T DE3851332 T DE 3851332T DE 3851332 T DE3851332 T DE 3851332T DE 3851332 D1 DE3851332 D1 DE 3851332D1
Authority
DE
Germany
Prior art keywords
gaas
transimpedance amplifier
capacitive feedback
capacitive
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3851332T
Other languages
English (en)
Other versions
DE3851332T2 (de
Inventor
Robert Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3851332D1 publication Critical patent/DE3851332D1/de
Publication of DE3851332T2 publication Critical patent/DE3851332T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE3851332T 1988-02-03 1988-12-27 Kapazitiv rückgekoppelter gaas-transimpedanzverstärker. Expired - Lifetime DE3851332T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/151,845 US4868902A (en) 1988-02-03 1988-02-03 GaAs capacitive feedback transimpedance amplifier
PCT/US1988/004606 WO1989007365A1 (en) 1988-02-03 1988-12-27 GaAs CAPACITIVE FEEDBACK TRANSIMPEDANCE AMPLIFIER

Publications (2)

Publication Number Publication Date
DE3851332D1 true DE3851332D1 (de) 1994-10-06
DE3851332T2 DE3851332T2 (de) 1995-04-13

Family

ID=22540468

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851332T Expired - Lifetime DE3851332T2 (de) 1988-02-03 1988-12-27 Kapazitiv rückgekoppelter gaas-transimpedanzverstärker.

Country Status (6)

Country Link
US (1) US4868902A (de)
EP (1) EP0372018B1 (de)
JP (1) JPH0612299B2 (de)
DE (1) DE3851332T2 (de)
IL (1) IL88870A (de)
WO (1) WO1989007365A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3827465A1 (de) * 1988-08-12 1990-02-15 Steinheil Optronik Gmbh Verstaerker fuer infrarotdetektoren
US4929913A (en) * 1989-08-14 1990-05-29 Hughes Aircraft Company GaAs focal plane array readout
US4943491A (en) * 1989-11-20 1990-07-24 Honeywell Inc. Structure for improving interconnect reliability of focal plane arrays
US5236871A (en) * 1992-04-29 1993-08-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for producing a hybridization of detector array and integrated circuit for readout
DE4226820A1 (de) * 1992-08-13 1994-02-17 Bodenseewerk Geraetetech Kühlsystem zum Abkühlen eines Kühlobjektes auf tiefe Temperaturen mittels eines Joule-Thomson-Kühlers
US5449908A (en) * 1993-12-30 1995-09-12 Texas Instruments Incorporated Hybrid CCD imaging
GB2288499A (en) * 1994-03-08 1995-10-18 Stewart Hughes Ltd Gain control and capacitance correction for photodiode signal amplifier
US5563405A (en) * 1995-04-28 1996-10-08 Santa Barbara Research Center Staring IR-FPA with on-FPA adaptive dynamic range control electronics
US5708263A (en) * 1995-12-27 1998-01-13 International Business Machines Corporation Photodetector array
US6121838A (en) * 1998-12-23 2000-09-19 Finisar Corporation Precision GaAs low-voltage DC amplifier
US6809313B1 (en) 2003-03-17 2004-10-26 Sandia Corporation Micro faraday-element array detector for ion mobility spectroscopy
US7498585B2 (en) * 2006-04-06 2009-03-03 Battelle Memorial Institute Method and apparatus for simultaneous detection and measurement of charged particles at one or more levels of particle flux for analysis of same
US7377171B2 (en) * 2006-08-15 2008-05-27 General Electric Company Feedback circuit for radiation resistant transducer
US20080217717A1 (en) * 2007-03-09 2008-09-11 Lockheed Martin Corporation Cte matched multiplexor
US7626460B2 (en) * 2007-10-30 2009-12-01 Raytheon Company Low noise, low power and high bandwidth capacitive feedback trans-impedance amplifier with differential FET input and bipolar emitter follower feedback
GB2463884B (en) * 2008-09-26 2014-01-29 Kathrein Werke Kg Antenna array with differently power rated amplifiers
JP7297479B2 (ja) 2019-03-15 2023-06-26 エイブリック株式会社 半導体装置
CN112217480A (zh) * 2019-08-07 2021-01-12 成都优蕊光电科技有限公司 一种基于电容器反馈的跨阻放大器及光电传感器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808435A (en) * 1973-05-29 1974-04-30 Texas Instruments Inc Infra-red quantum differential detector system
US4004148A (en) * 1976-02-02 1977-01-18 General Electric Company Accumulation mode charge injection infrared sensor
US4335307A (en) * 1980-04-21 1982-06-15 Technicare Corporation Radiographic apparatus and method with automatic exposure control
US4567363A (en) * 1983-06-20 1986-01-28 Santa Barbara Research Center Switched capacitor transresistance amplifier
DE3338024A1 (de) * 1983-10-20 1985-05-02 Standard Elektrik Lorenz Ag, 7000 Stuttgart Verstaerker mit strom-spannungswandlung, insbesondere vorverstaerker eines optischen empfaengers
US4555623A (en) * 1983-12-05 1985-11-26 Irvine Sensors Corporation Pre-amplifier in focal plane detector array
US4718119A (en) * 1984-08-27 1988-01-05 Motorola Inc. AGC circuit including a precision voltage clamp and method
US4743762A (en) * 1984-12-20 1988-05-10 Hughes Aircraft Company Noise immune infrared readout circuitry and technique
US4659928A (en) * 1985-04-22 1987-04-21 Texas Instruments Incorporated Focal plane array infrared device
US4616189A (en) * 1985-04-26 1986-10-07 Triquint Semiconductor, Inc. Gallium arsenide differential amplifier with closed loop bias stabilization
US4652766A (en) * 1985-12-16 1987-03-24 General Electric Company Direct coupled charge injection readout circuit and readout method for an IR sensing charge injection device
US4709141A (en) * 1986-01-09 1987-11-24 Rockwell International Corporation Non-destructive testing of cooled detector arrays
US4684800A (en) * 1986-03-14 1987-08-04 Hughes Aircraft Company Low-noise charge-injection method and apparatus for IR CCD scanning
DE3615925A1 (de) * 1986-05-12 1987-11-19 Hughes Aircraft Co Integrierender kapazitiv gekoppelter transimpedanzverstaerker

Also Published As

Publication number Publication date
EP0372018A1 (de) 1990-06-13
DE3851332T2 (de) 1995-04-13
WO1989007365A1 (en) 1989-08-10
EP0372018B1 (de) 1994-08-31
JPH0612299B2 (ja) 1994-02-16
JPH02503858A (ja) 1990-11-08
IL88870A (en) 1993-04-04
US4868902A (en) 1989-09-19
IL88870A0 (en) 1989-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RAYTHEON CO. (N.D.GES.D. STAATES DELAWARE), LEXING