SE8603491L - Integrerad krets med staplade mosfelteffekttransistorer och sett att framstella densamma - Google Patents

Integrerad krets med staplade mosfelteffekttransistorer och sett att framstella densamma

Info

Publication number
SE8603491L
SE8603491L SE8603491A SE8603491A SE8603491L SE 8603491 L SE8603491 L SE 8603491L SE 8603491 A SE8603491 A SE 8603491A SE 8603491 A SE8603491 A SE 8603491A SE 8603491 L SE8603491 L SE 8603491L
Authority
SE
Sweden
Prior art keywords
integrated circuit
mosphelet
stacked
way
make
Prior art date
Application number
SE8603491A
Other languages
Unknown language ( )
English (en)
Swedish (sv)
Other versions
SE8603491D0 (sv
Inventor
S T Hsu
D W Flatley
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8603491D0 publication Critical patent/SE8603491D0/xx
Publication of SE8603491L publication Critical patent/SE8603491L/

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
SE8603491A 1985-08-26 1986-08-19 Integrerad krets med staplade mosfelteffekttransistorer och sett att framstella densamma SE8603491L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76914685A 1985-08-26 1985-08-26

Publications (2)

Publication Number Publication Date
SE8603491D0 SE8603491D0 (sv) 1986-08-19
SE8603491L true SE8603491L (sv) 1987-02-27

Family

ID=25084598

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8603491A SE8603491L (sv) 1985-08-26 1986-08-19 Integrerad krets med staplade mosfelteffekttransistorer och sett att framstella densamma

Country Status (4)

Country Link
JP (1) JPS6358861A (de)
KR (1) KR870002667A (de)
DE (1) DE3628233A1 (de)
SE (1) SE8603491L (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69023765T2 (de) * 1990-07-31 1996-06-20 Ibm Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1191970A (en) * 1982-11-09 1985-08-13 Abdalla A. Naem Stacked mos transistor

Also Published As

Publication number Publication date
JPS6358861A (ja) 1988-03-14
KR870002667A (ko) 1987-04-06
DE3628233A1 (de) 1987-02-26
SE8603491D0 (sv) 1986-08-19

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