SE8306663L - Forfarande for framstellning av halvledaranordning - Google Patents
Forfarande for framstellning av halvledaranordningInfo
- Publication number
- SE8306663L SE8306663L SE8306663A SE8306663A SE8306663L SE 8306663 L SE8306663 L SE 8306663L SE 8306663 A SE8306663 A SE 8306663A SE 8306663 A SE8306663 A SE 8306663A SE 8306663 L SE8306663 L SE 8306663L
- Authority
- SE
- Sweden
- Prior art keywords
- silicon
- wafer
- nickel
- metallization
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 229910052759 nickel Inorganic materials 0.000 abstract 3
- 238000001465 metallisation Methods 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910021334 nickel silicide Inorganic materials 0.000 abstract 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44776182A | 1982-12-08 | 1982-12-08 | |
| US06/447,760 US4878099A (en) | 1982-12-08 | 1982-12-08 | Metallizing system for semiconductor wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE8306663D0 SE8306663D0 (sv) | 1983-12-02 |
| SE8306663L true SE8306663L (sv) | 1984-06-09 |
Family
ID=27035081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE8306663A SE8306663L (sv) | 1982-12-08 | 1983-12-02 | Forfarande for framstellning av halvledaranordning |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE3344462A1 (xx) |
| FR (1) | FR2537778B1 (xx) |
| GB (2) | GB2132412B (xx) |
| IT (1) | IT1194505B (xx) |
| SE (1) | SE8306663L (xx) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3301666A1 (de) * | 1983-01-20 | 1984-07-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung |
| JPH07118534B2 (ja) * | 1990-02-22 | 1995-12-18 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US5422286A (en) * | 1994-10-07 | 1995-06-06 | United Microelectronics Corp. | Process for fabricating high-voltage semiconductor power device |
| CN1241253C (zh) * | 2002-06-24 | 2006-02-08 | 丰田合成株式会社 | 半导体元件的制造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL135878C (xx) * | 1961-08-12 | |||
| US3288662A (en) * | 1963-07-18 | 1966-11-29 | Rca Corp | Method of etching to dice a semiconductor slice |
| DE1258235B (de) * | 1965-01-04 | 1968-01-04 | Licentia Gmbh | Verfahren zur Herstellung einer, die Sperrspannungsfestigkeit erhoehenden Randzonenprofilierung von Siliziumscheiben |
| DE1286641B (de) * | 1966-08-26 | 1969-01-09 | Bosch Gmbh Robert | Verfahren zur Kontaktierung einer Halbleiteranordnung |
| DE1789062C3 (de) * | 1968-09-30 | 1978-11-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen |
| IT995593B (it) * | 1972-12-11 | 1975-11-20 | Rca Corp | Dispositivo semiconduttore con connessioni a barretta e metodo di fabbricazione dello stesso |
| DE2332822B2 (de) * | 1973-06-28 | 1978-04-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium |
| GB1487201A (en) * | 1974-12-20 | 1977-09-28 | Lucas Electrical Ltd | Method of manufacturing semi-conductor devices |
| US4042951A (en) * | 1975-09-25 | 1977-08-16 | Texas Instruments Incorporated | Gold-germanium alloy contacts for a semiconductor device |
| IN144812B (xx) * | 1976-01-22 | 1978-07-15 | Westinghouse Electric Corp | |
| IT1059086B (it) * | 1976-04-14 | 1982-05-31 | Ates Componenti Elettron | Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa |
| DE2656015A1 (de) * | 1976-12-10 | 1978-06-15 | Bbc Brown Boveri & Cie | Verfahren zum herstellen von halbleiterbauelementen |
| DE2709802A1 (de) * | 1977-03-07 | 1978-09-14 | Siemens Ag | Verfahren zur entfernung von bei ionenimplantationsprozessen in halbleitersystemen entstehenden verunreinigungen |
| GB2064860B (en) * | 1979-10-18 | 1984-01-25 | Gen Electric | Method for metallizing a semiconductor element |
| CA1164734A (en) * | 1980-07-11 | 1984-04-03 | Michael Schneider | Method for applying an anti-reflection coating to a solar cell |
| US4339869A (en) * | 1980-09-15 | 1982-07-20 | General Electric Company | Method of making low resistance contacts in semiconductor devices by ion induced silicides |
-
1983
- 1983-12-02 SE SE8306663A patent/SE8306663L/xx not_active Application Discontinuation
- 1983-12-06 IT IT24070/83A patent/IT1194505B/it active
- 1983-12-08 GB GB08332808A patent/GB2132412B/en not_active Expired
- 1983-12-08 FR FR8319680A patent/FR2537778B1/fr not_active Expired
- 1983-12-08 DE DE19833344462 patent/DE3344462A1/de active Granted
-
1985
- 1985-11-27 GB GB08529225A patent/GB2168843B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2132412A (en) | 1984-07-04 |
| DE3344462A1 (de) | 1984-06-20 |
| SE8306663D0 (sv) | 1983-12-02 |
| GB8529225D0 (en) | 1986-01-02 |
| GB2168843B (en) | 1987-08-19 |
| FR2537778B1 (fr) | 1986-12-19 |
| GB2168843A (en) | 1986-06-25 |
| GB8332808D0 (en) | 1984-01-18 |
| FR2537778A1 (fr) | 1984-06-15 |
| IT8324070A0 (it) | 1983-12-06 |
| IT1194505B (it) | 1988-09-22 |
| GB2132412B (en) | 1987-08-19 |
| DE3344462C2 (xx) | 1989-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
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