FR2449332A1 - Methode de protection de zones de contact sur des dispositifs a semi-conducteurs - Google Patents
Methode de protection de zones de contact sur des dispositifs a semi-conducteursInfo
- Publication number
- FR2449332A1 FR2449332A1 FR8003136A FR8003136A FR2449332A1 FR 2449332 A1 FR2449332 A1 FR 2449332A1 FR 8003136 A FR8003136 A FR 8003136A FR 8003136 A FR8003136 A FR 8003136A FR 2449332 A1 FR2449332 A1 FR 2449332A1
- Authority
- FR
- France
- Prior art keywords
- layer
- nitride
- semiconductor devices
- islands
- contact areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
L'INVENTION CONCERNE UNE METHODE DE FORMATION DES CONTACTS ELECTRIQUES D'UN DISPOSITIF OU D'UN CIRCUIT INTEGRE A SEMI-CONDUCTEUR. LE SUBSTRAT SEMI-CONDUCTEUR 11 EST REVETU D'UNE COUCHE DE NITRURE DE SILICIUM, EVENTUELLEMENT APRES LE DEPOT D'UNE COUCHE MINCE D'OXYDE 13 QUI PROTEGE LES CIRCUITS. LA COUCHE DE NITRURE EST ATTAQUEE SELECTIVEMENT POUR FORMER DES ILOTS DE NITRURE 12B MASQUANT DES REGIONS DE CONTACT PREDETERMINEES, PUIS LA CROISSANCE D'UNE COUCHE EPAISSE D'OXYDE 15 ENTRE LES ILOTS EST OBTENUE PAR OXYDATION THERMIQUE. LA DIFFUSION DE L'OXYGENE SOUS CHAQUE MASQUE 12B INCURVE CE DERNIER ET REDUIT LA SURFACE DES FENETRES DE CONTACT QUE L'ON OUVRE ENSUITE EN ELIMINANT SUCCESSIVEMENT LES MASQUES 12B ET LES PARTIES RESTANTES DE LA COUCHE 13. LA FORME DES FENETRES DE CONTACT AINSI OBTENUES ASSURE UNE EXCELLENTE CONTINUITE DE LA COUCHE DE METALLISATION. APPLICATION PARTICULIERE A LA FABRICATION DE MEMOIRES MOS A ACCES SELECTIF.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7905111A GB2042801B (en) | 1979-02-13 | 1979-02-13 | Contacting semicnductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2449332A1 true FR2449332A1 (fr) | 1980-09-12 |
FR2449332B1 FR2449332B1 (fr) | 1983-10-28 |
Family
ID=10503176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8003136A Granted FR2449332A1 (fr) | 1979-02-13 | 1980-02-13 | Methode de protection de zones de contact sur des dispositifs a semi-conducteurs |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS55110039A (fr) |
DE (1) | DE3004480A1 (fr) |
FR (1) | FR2449332A1 (fr) |
GB (1) | GB2042801B (fr) |
IT (1) | IT1209190B (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1549386A (fr) * | 1966-10-05 | 1968-12-13 | ||
FR1594694A (fr) * | 1967-10-28 | 1970-07-17 | ||
FR2130351A1 (fr) * | 1971-03-19 | 1972-11-03 | Itt | |
US4039359A (en) * | 1975-10-11 | 1977-08-02 | Hitachi, Ltd. | Method of manufacturing a flattened semiconductor device |
FR2344127A1 (fr) * | 1976-03-11 | 1977-10-07 | Siemens Ag | Procede pour fabriquer des composants a semi-conducteurs |
-
1979
- 1979-02-13 GB GB7905111A patent/GB2042801B/en not_active Expired
-
1980
- 1980-02-06 JP JP1255780A patent/JPS55110039A/ja active Pending
- 1980-02-07 DE DE19803004480 patent/DE3004480A1/de not_active Withdrawn
- 1980-02-13 FR FR8003136A patent/FR2449332A1/fr active Granted
- 1980-02-13 IT IT8019876A patent/IT1209190B/it active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1549386A (fr) * | 1966-10-05 | 1968-12-13 | ||
US3970486A (en) * | 1966-10-05 | 1976-07-20 | U.S. Philips Corporation | Methods of producing a semiconductor device and a semiconductor device produced by said method |
FR1594694A (fr) * | 1967-10-28 | 1970-07-17 | ||
GB1205320A (en) * | 1967-10-28 | 1970-09-16 | Nippon Telegraph & Telephone | Improvements in or relating to the production of semiconductor devices |
FR2130351A1 (fr) * | 1971-03-19 | 1972-11-03 | Itt | |
US4039359A (en) * | 1975-10-11 | 1977-08-02 | Hitachi, Ltd. | Method of manufacturing a flattened semiconductor device |
FR2344127A1 (fr) * | 1976-03-11 | 1977-10-07 | Siemens Ag | Procede pour fabriquer des composants a semi-conducteurs |
Non-Patent Citations (1)
Title |
---|
EXBK/78 * |
Also Published As
Publication number | Publication date |
---|---|
GB2042801B (en) | 1983-12-14 |
FR2449332B1 (fr) | 1983-10-28 |
IT8019876A0 (it) | 1980-02-13 |
IT1209190B (it) | 1989-07-16 |
JPS55110039A (en) | 1980-08-25 |
GB2042801A (en) | 1980-09-24 |
DE3004480A1 (de) | 1980-08-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |