SE7908278L - Effekthalvledarkomponent med zonskyddsringar - Google Patents

Effekthalvledarkomponent med zonskyddsringar

Info

Publication number
SE7908278L
SE7908278L SE7908278A SE7908278A SE7908278L SE 7908278 L SE7908278 L SE 7908278L SE 7908278 A SE7908278 A SE 7908278A SE 7908278 A SE7908278 A SE 7908278A SE 7908278 L SE7908278 L SE 7908278L
Authority
SE
Sweden
Prior art keywords
power controller
controller component
junction
zone
protector rings
Prior art date
Application number
SE7908278A
Other languages
Unknown language ( )
English (en)
Other versions
SE438576B (sv
Inventor
R Sittig
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Publication of SE7908278L publication Critical patent/SE7908278L/sv
Publication of SE438576B publication Critical patent/SE438576B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
SE7908278A 1978-10-10 1979-10-05 Skivformig effekthalvledarkomponent med minst en zonskyddsring SE438576B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1047878A CH633907A5 (de) 1978-10-10 1978-10-10 Leistungshalbleiterbauelement mit zonen-guard-ringen.

Publications (2)

Publication Number Publication Date
SE7908278L true SE7908278L (sv) 1980-04-11
SE438576B SE438576B (sv) 1985-04-22

Family

ID=4363665

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7908278A SE438576B (sv) 1978-10-10 1979-10-05 Skivformig effekthalvledarkomponent med minst en zonskyddsring

Country Status (8)

Country Link
US (1) US4377816A (sv)
JP (1) JPS5552257A (sv)
CH (1) CH633907A5 (sv)
DE (1) DE2845934A1 (sv)
FR (1) FR2438915A1 (sv)
GB (1) GB2033154B (sv)
NL (1) NL7907429A (sv)
SE (1) SE438576B (sv)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126968A (en) * 1980-03-10 1981-10-05 Mitsubishi Electric Corp Semiconductor device
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
JPS61251083A (ja) * 1985-04-26 1986-11-08 Rohm Co Ltd 半導体装置
CH670333A5 (sv) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie
CH670172A5 (sv) * 1986-05-30 1989-05-12 Bbc Brown Boveri & Cie
DE3867371D1 (en) * 1987-08-11 1992-02-13 Bbc Brown Boveri & Cie Gate-turn-off-thyristor.
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US5221856A (en) * 1989-04-05 1993-06-22 U.S. Philips Corp. Bipolar transistor with floating guard region under extrinsic base
JP2903749B2 (ja) * 1991-03-29 1999-06-14 富士電機株式会社 伝導度変調型ｍｉｓｆｅｔを備えた半導体装置
US5969400A (en) * 1995-03-15 1999-10-19 Kabushiki Kaisha Toshiba High withstand voltage semiconductor device
JP2004288680A (ja) * 2003-03-19 2004-10-14 Mitsubishi Electric Corp 圧接型半導体装置
EP1909332A1 (en) * 2006-10-05 2008-04-09 ABB Technology AG Power Semiconductor device
JP4912353B2 (ja) * 2008-05-16 2012-04-11 三菱電機株式会社 電力用半導体装置およびその製造方法
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置
CN106505092B (zh) * 2016-08-18 2024-05-14 全球能源互联网研究院 一种垂直型半导体器件的双面终端结构
US10074685B1 (en) 2017-05-17 2018-09-11 Prismatic Sensors Ab X-ray sensor, x-ray detector system and x-ray imaging system
US10813607B2 (en) 2018-06-27 2020-10-27 Prismatic Sensors Ab X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor
EP3970194A4 (en) 2019-05-14 2022-12-21 Prismatic Sensors AB X-RAY SENSOR HAVING A FIELD LIMITING RING CONFIGURATION

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection
US3341380A (en) * 1964-12-28 1967-09-12 Gen Electric Method of producing semiconductor devices
US3343050A (en) * 1965-05-24 1967-09-19 Westinghouse Electric Corp High voltage rectifier having controlled current leakage
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3612959A (en) * 1969-01-31 1971-10-12 Unitrode Corp Planar zener diodes having uniform junction breakdown characteristics
US4003072A (en) * 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
JPS5320194B2 (sv) * 1972-04-20 1978-06-24
JPS5242634B2 (sv) * 1973-09-03 1977-10-25
JPS5631898B2 (sv) * 1974-01-11 1981-07-24
US4125415A (en) * 1975-12-22 1978-11-14 Motorola, Inc. Method of making high voltage semiconductor structure
CH594989A5 (sv) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
US4079403A (en) * 1976-11-01 1978-03-14 Electric Power Research Institute, Inc. Thyristor device with self-protection against breakover turn-on failure
US4158206A (en) * 1977-02-07 1979-06-12 Rca Corporation Semiconductor device
US4242690A (en) * 1978-06-06 1980-12-30 General Electric Company High breakdown voltage semiconductor device

Also Published As

Publication number Publication date
JPS6362111B2 (sv) 1988-12-01
GB2033154B (en) 1983-05-18
US4377816A (en) 1983-03-22
NL7907429A (nl) 1980-04-14
DE2845934C2 (sv) 1989-04-20
JPS5552257A (en) 1980-04-16
FR2438915B1 (sv) 1984-11-16
DE2845934A1 (de) 1980-04-24
CH633907A5 (de) 1982-12-31
SE438576B (sv) 1985-04-22
GB2033154A (en) 1980-05-14
FR2438915A1 (fr) 1980-05-09

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