SE424787B - Sett att framstella halvledartabletter med vardera minst en pn-overgang - Google Patents
Sett att framstella halvledartabletter med vardera minst en pn-overgangInfo
- Publication number
- SE424787B SE424787B SE7704782A SE7704782A SE424787B SE 424787 B SE424787 B SE 424787B SE 7704782 A SE7704782 A SE 7704782A SE 7704782 A SE7704782 A SE 7704782A SE 424787 B SE424787 B SE 424787B
- Authority
- SE
- Sweden
- Prior art keywords
- valid
- tables
- transition
- make semiconductor
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51049009A JPS584815B2 (ja) | 1976-04-27 | 1976-04-27 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7704782L SE7704782L (sv) | 1977-10-28 |
SE424787B true SE424787B (sv) | 1982-08-09 |
Family
ID=12819146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7704782A SE424787B (sv) | 1976-04-27 | 1977-04-26 | Sett att framstella halvledartabletter med vardera minst en pn-overgang |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS584815B2 (sv) |
DE (1) | DE2718781C2 (sv) |
SE (1) | SE424787B (sv) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2422257A1 (fr) * | 1977-11-28 | 1979-11-02 | Silicium Semiconducteur Ssc | Procede de sillonnage et de glassiviation et nouvelle structure de sillon |
US4235645A (en) * | 1978-12-15 | 1980-11-25 | Westinghouse Electric Corp. | Process for forming glass-sealed multichip semiconductor devices |
JPS56131955A (en) * | 1980-09-01 | 1981-10-15 | Hitachi Ltd | Semiconductor device |
EP0264564B1 (de) * | 1986-09-30 | 1992-11-11 | Siemens Aktiengesellschaft | Silizium-Temperatursensor |
JP5930840B2 (ja) * | 2012-05-22 | 2016-06-08 | 株式会社ディスコ | 板状物の加工方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
DE2323438C3 (de) * | 1973-05-09 | 1978-12-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen eines Halbleiterbauelementes |
DE2422345A1 (de) * | 1973-05-09 | 1975-11-20 | Siemens Ag | Verfahren zur herstellung einer halbleitervorrichtung |
-
1976
- 1976-04-27 JP JP51049009A patent/JPS584815B2/ja not_active Expired
-
1977
- 1977-04-26 SE SE7704782A patent/SE424787B/sv not_active IP Right Cessation
- 1977-04-27 DE DE19772718781 patent/DE2718781C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2718781A1 (de) | 1977-11-10 |
JPS52131464A (en) | 1977-11-04 |
JPS584815B2 (ja) | 1983-01-27 |
SE7704782L (sv) | 1977-10-28 |
DE2718781C2 (de) | 1983-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 7704782-7 Effective date: 19941110 Format of ref document f/p: F |