SE7812301L - Sett att framstella halvledare med varierat gap - Google Patents
Sett att framstella halvledare med varierat gapInfo
- Publication number
- SE7812301L SE7812301L SE7812301A SE7812301A SE7812301L SE 7812301 L SE7812301 L SE 7812301L SE 7812301 A SE7812301 A SE 7812301A SE 7812301 A SE7812301 A SE 7812301A SE 7812301 L SE7812301 L SE 7812301L
- Authority
- SE
- Sweden
- Prior art keywords
- way
- produce semiconductors
- varied gap
- varied
- gap
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/007—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lenses (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/864,417 US4227948A (en) | 1977-12-27 | 1977-12-27 | Growth technique for preparing graded gap semiconductors and devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7812301L true SE7812301L (sv) | 1979-06-28 |
Family
ID=25343227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7812301A SE7812301L (sv) | 1977-12-27 | 1978-11-29 | Sett att framstella halvledare med varierat gap |
Country Status (10)
Country | Link |
---|---|
US (1) | US4227948A (sv) |
JP (1) | JPS5492173A (sv) |
BE (1) | BE870707A (sv) |
CA (1) | CA1152622A (sv) |
DE (1) | DE2855627A1 (sv) |
FR (1) | FR2413125A1 (sv) |
GB (1) | GB1604147A (sv) |
IT (1) | IT1101137B (sv) |
NL (1) | NL7808348A (sv) |
SE (1) | SE7812301L (sv) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4442446A (en) * | 1982-03-17 | 1984-04-10 | The United States Of America As Represented By The Secretary Of The Navy | Sensitized epitaxial infrared detector |
US4543511A (en) * | 1983-03-24 | 1985-09-24 | Wisconsin Alumni Research Foundation | Semiconductor electrodes having regions of graded composition exhibiting photoluminescence and electroluminescence |
FR2557562A1 (fr) * | 1983-12-29 | 1985-07-05 | Menn Roger | Procede de fabrication de couches non conductrices a variation de composition atomique |
US4853339A (en) * | 1988-07-27 | 1989-08-01 | The United States Of America As Represented By The Secretary Of The Navy | Method of sensitizing Pb-salt epitaxial films for schottky diodes |
JP4509433B2 (ja) * | 2001-07-12 | 2010-07-21 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US7170214B2 (en) * | 2003-09-08 | 2007-01-30 | New Scale Technologies, Inc. | Mechanism comprised of ultrasonic lead screw motor |
JP5197030B2 (ja) * | 2008-01-16 | 2013-05-15 | 株式会社東芝 | エピタキシャルウェーハの製造装置及び製造方法 |
US8828279B1 (en) | 2010-04-12 | 2014-09-09 | Bowling Green State University | Colloids of lead chalcogenide titanium dioxide and their synthesis |
GB2559957A (en) | 2017-02-15 | 2018-08-29 | Univ Of The West Of Scotland | Infrared spectrophotometer |
GB201702478D0 (en) | 2017-02-15 | 2017-03-29 | Univ Of The West Of Scotland | Apparatus and methods for depositing variable interference filters |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3763070A (en) * | 1970-06-03 | 1973-10-02 | Ici Ltd | Hydraulic cement with polyisocyanate and aliphatic polyepoxide |
FR2106956A5 (en) * | 1970-09-30 | 1972-05-05 | Siemens Ag | Cadmium sulphide-selenide crystals produc- - tion |
US3793070A (en) * | 1971-06-01 | 1974-02-19 | Us Navy | Method of varying the carrier concentration of lead-tin sulfide epitaxial films |
US4066481A (en) * | 1974-11-11 | 1978-01-03 | Rockwell International Corporation | Metalorganic chemical vapor deposition of IVA-IVA compounds and composite |
US3969743A (en) * | 1975-04-23 | 1976-07-13 | Aeronutronic Ford Corporation | Protective coating for IV-VI compound semiconductor devices |
DE2538947A1 (de) * | 1975-09-02 | 1977-03-03 | Licentia Gmbh | Verfahren zur epitaktischen abscheidung |
US4053919A (en) * | 1976-08-18 | 1977-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | High speed infrared detector |
US4154631A (en) * | 1977-05-27 | 1979-05-15 | The United States Of America As Represented By The Secretary Of The Navy | Equilibrium growth technique for preparing PbSx Se1-x epilayers |
-
1977
- 1977-12-27 US US05/864,417 patent/US4227948A/en not_active Expired - Lifetime
-
1978
- 1978-05-31 GB GB25904/78A patent/GB1604147A/en not_active Expired
- 1978-06-27 CA CA000306244A patent/CA1152622A/en not_active Expired
- 1978-08-10 NL NL7808348A patent/NL7808348A/xx not_active Application Discontinuation
- 1978-09-22 BE BE190670A patent/BE870707A/xx not_active IP Right Cessation
- 1978-10-20 JP JP12865778A patent/JPS5492173A/ja active Pending
- 1978-11-29 SE SE7812301A patent/SE7812301L/sv unknown
- 1978-12-13 FR FR7835113A patent/FR2413125A1/fr active Granted
- 1978-12-22 IT IT31227/78A patent/IT1101137B/it active
- 1978-12-22 DE DE19782855627 patent/DE2855627A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE2855627A1 (de) | 1979-07-12 |
NL7808348A (nl) | 1979-06-29 |
GB1604147A (en) | 1981-12-02 |
IT7831227A0 (it) | 1978-12-22 |
CA1152622A (en) | 1983-08-23 |
FR2413125B1 (sv) | 1985-04-19 |
IT1101137B (it) | 1985-09-28 |
BE870707A (fr) | 1979-01-15 |
US4227948A (en) | 1980-10-14 |
JPS5492173A (en) | 1979-07-21 |
FR2413125A1 (fr) | 1979-07-27 |
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