SE7704805L - Forfarande for avskiljning av polykristallint kisel - Google Patents
Forfarande for avskiljning av polykristallint kiselInfo
- Publication number
- SE7704805L SE7704805L SE7704805A SE7704805A SE7704805L SE 7704805 L SE7704805 L SE 7704805L SE 7704805 A SE7704805 A SE 7704805A SE 7704805 A SE7704805 A SE 7704805A SE 7704805 L SE7704805 L SE 7704805L
- Authority
- SE
- Sweden
- Prior art keywords
- polycrystalline silicon
- bodies
- deposition
- silicon
- deposited
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 238000000926 separation method Methods 0.000 title 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 150000003377 silicon compounds Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762618273 DE2618273C3 (de) | 1976-04-27 | 1976-04-27 | Verfahren zur Abscheidung von polykristallinem Silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE7704805L true SE7704805L (sv) | 1977-10-28 |
Family
ID=5976298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7704805A SE7704805L (sv) | 1976-04-27 | 1977-04-26 | Forfarande for avskiljning av polykristallint kisel |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS52155142A (enrdf_load_stackoverflow) |
| BE (1) | BE853997A (enrdf_load_stackoverflow) |
| CA (1) | CA1092905A (enrdf_load_stackoverflow) |
| DE (1) | DE2618273C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2361304A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1569651A (enrdf_load_stackoverflow) |
| IT (1) | IT1086646B (enrdf_load_stackoverflow) |
| NL (1) | NL7702613A (enrdf_load_stackoverflow) |
| SE (1) | SE7704805L (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5354580A (en) * | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
| KR20080005953A (ko) * | 2005-04-10 | 2008-01-15 | 알이씨 실리콘 인코포레이티드 | 다결정 실리콘의 제조 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1391792A (fr) * | 1962-12-19 | 1965-03-12 | Thomson Houston Comp Francaise | Perfectionnements aux procédés de formation d'un matériau en feuilles, notamment pour feuilles de graphite pyrolytique |
| DE1272801B (de) * | 1965-07-14 | 1968-07-11 | Hitco Cardena | Verfahren zur Verkohlung von faserigem Zellulosematerial |
| DE2022025C3 (de) * | 1970-05-05 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial |
| GB1292534A (en) * | 1970-06-04 | 1972-10-11 | Pfizer | Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties |
| DE2229229A1 (de) * | 1972-06-15 | 1974-01-10 | Siemens Ag | Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern |
-
1976
- 1976-04-27 DE DE19762618273 patent/DE2618273C3/de not_active Expired
-
1977
- 1977-03-08 CA CA273,378A patent/CA1092905A/en not_active Expired
- 1977-03-10 NL NL7702613A patent/NL7702613A/xx not_active Application Discontinuation
- 1977-04-22 IT IT4907877A patent/IT1086646B/it active
- 1977-04-25 GB GB1708777A patent/GB1569651A/en not_active Expired
- 1977-04-26 SE SE7704805A patent/SE7704805L/ not_active Application Discontinuation
- 1977-04-27 BE BE177052A patent/BE853997A/xx not_active IP Right Cessation
- 1977-04-27 FR FR7712732A patent/FR2361304A1/fr active Granted
- 1977-04-27 JP JP4899777A patent/JPS52155142A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2361304A1 (fr) | 1978-03-10 |
| NL7702613A (nl) | 1977-10-31 |
| FR2361304B1 (enrdf_load_stackoverflow) | 1981-01-09 |
| GB1569651A (en) | 1980-06-18 |
| CA1092905A (en) | 1981-01-06 |
| DE2618273B2 (de) | 1978-11-09 |
| BE853997A (fr) | 1977-10-27 |
| JPS52155142A (en) | 1977-12-23 |
| JPS5635604B2 (enrdf_load_stackoverflow) | 1981-08-18 |
| IT1086646B (it) | 1985-05-28 |
| DE2618273A1 (de) | 1977-11-03 |
| DE2618273C3 (de) | 1984-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3157541A (en) | Precipitating highly pure compact silicon carbide upon carriers | |
| ES457596A1 (es) | Aparato para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio. | |
| Matsunami et al. | Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 system | |
| GB1393211A (en) | Manufacture of shaped hollow bodies of silicon or silicon carbide | |
| GB1073555A (en) | Texture-free polycrystalline silicon and processes for the manufacture thereof | |
| ES420664A1 (es) | Procedimiento para la fabricacion de un elemento de resis- tencia electrico en forma de una capa conductora. | |
| JPS5529155A (en) | Semiconductor device | |
| JPS5358490A (en) | Forming method for film | |
| SE7704805L (sv) | Forfarande for avskiljning av polykristallint kisel | |
| US3489621A (en) | Method of producing highly pure crystalline,especially monocrystalline materials | |
| JPS577923A (en) | Manufacture of receiving table for processing single silicon crystal wafer | |
| KR890016220A (ko) | 다이야몬드와 다이야몬드를 접합시키는 방법 | |
| US3463666A (en) | Monocrystalline beta silicon carbide on sapphire | |
| JPS55149195A (en) | Manufacture of silicon carbide substrate | |
| GB955700A (en) | Process for the production of coatings of very pure silicon carbide free from bindingagents | |
| GB1292534A (en) | Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties | |
| GB1076465A (en) | Process for the preparation of crystalline semiconductor material | |
| GB1518564A (en) | Method for the low pressure pyrolytic deposition of silicon nitride | |
| JPS5649520A (en) | Vapor growth of compound semiconductor | |
| JPS5645897A (en) | Manufacture of silicon carbide crystal | |
| SE7601625L (sv) | Elektriskt motstand med en resistanskropp av kilselkarbid och uppvisande en negativ temperaturkoefficient | |
| JPS55149193A (en) | Manufacture of silicon carbide substrate | |
| JPS55149198A (en) | Manufacture of silicon carbide substrate | |
| JPS55149197A (en) | Manufacture of silicon carbide substrate | |
| JPS55162412A (en) | Manufacture of carbonaceous whisker |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
Ref document number: 7704805-6 |