CA1092905A - Process for the deposition of polycrystalline silicon from the gas phase on heated carriers - Google Patents
Process for the deposition of polycrystalline silicon from the gas phase on heated carriersInfo
- Publication number
- CA1092905A CA1092905A CA273,378A CA273378A CA1092905A CA 1092905 A CA1092905 A CA 1092905A CA 273378 A CA273378 A CA 273378A CA 1092905 A CA1092905 A CA 1092905A
- Authority
- CA
- Canada
- Prior art keywords
- silicon
- deposition
- carrier
- bodies
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000008569 process Effects 0.000 title claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 12
- 239000000969 carrier Substances 0.000 title description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 56
- 239000010439 graphite Substances 0.000 claims abstract description 56
- 239000007789 gas Substances 0.000 claims abstract description 41
- 239000011888 foil Substances 0.000 claims abstract description 39
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 238000005137 deposition process Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 4
- 239000008246 gaseous mixture Substances 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 7
- 238000004026 adhesive bonding Methods 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000005488 sandblasting Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 239000002178 crystalline material Substances 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000005052 trichlorosilane Substances 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 10
- 239000010453 quartz Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 229910000831 Steel Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CBQYNPHHHJTCJS-UHFFFAOYSA-N Alline Chemical compound C1=CC=C2C3(O)CCN(C)C3NC2=C1 CBQYNPHHHJTCJS-UHFFFAOYSA-N 0.000 description 2
- 241001052209 Cylinder Species 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- 229910052990 silicon hydride Inorganic materials 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000002844 continuous effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 125000003963 dichloro group Chemical group Cl* 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- WTGQALLALWYDJH-WYHSTMEOSA-N scopolamine hydrobromide Chemical compound Br.C1([C@@H](CO)C(=O)OC2C[C@@H]3N([C@H](C2)[C@@H]2[C@H]3O2)C)=CC=CC=C1 WTGQALLALWYDJH-WYHSTMEOSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002311 subsequent effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- -1 ~or instance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP2618273.0 | 1976-04-27 | ||
DE19762618273 DE2618273C3 (de) | 1976-04-27 | 1976-04-27 | Verfahren zur Abscheidung von polykristallinem Silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1092905A true CA1092905A (en) | 1981-01-06 |
Family
ID=5976298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA273,378A Expired CA1092905A (en) | 1976-04-27 | 1977-03-08 | Process for the deposition of polycrystalline silicon from the gas phase on heated carriers |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS52155142A (enrdf_load_stackoverflow) |
BE (1) | BE853997A (enrdf_load_stackoverflow) |
CA (1) | CA1092905A (enrdf_load_stackoverflow) |
DE (1) | DE2618273C3 (enrdf_load_stackoverflow) |
FR (1) | FR2361304A1 (enrdf_load_stackoverflow) |
GB (1) | GB1569651A (enrdf_load_stackoverflow) |
IT (1) | IT1086646B (enrdf_load_stackoverflow) |
NL (1) | NL7702613A (enrdf_load_stackoverflow) |
SE (1) | SE7704805L (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354580A (en) * | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
KR20080005953A (ko) * | 2005-04-10 | 2008-01-15 | 알이씨 실리콘 인코포레이티드 | 다결정 실리콘의 제조 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1391792A (fr) * | 1962-12-19 | 1965-03-12 | Thomson Houston Comp Francaise | Perfectionnements aux procédés de formation d'un matériau en feuilles, notamment pour feuilles de graphite pyrolytique |
DE1272801B (de) * | 1965-07-14 | 1968-07-11 | Hitco Cardena | Verfahren zur Verkohlung von faserigem Zellulosematerial |
DE2022025C3 (de) * | 1970-05-05 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial |
GB1292534A (en) * | 1970-06-04 | 1972-10-11 | Pfizer | Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties |
DE2229229A1 (de) * | 1972-06-15 | 1974-01-10 | Siemens Ag | Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern |
-
1976
- 1976-04-27 DE DE19762618273 patent/DE2618273C3/de not_active Expired
-
1977
- 1977-03-08 CA CA273,378A patent/CA1092905A/en not_active Expired
- 1977-03-10 NL NL7702613A patent/NL7702613A/xx not_active Application Discontinuation
- 1977-04-22 IT IT4907877A patent/IT1086646B/it active
- 1977-04-25 GB GB1708777A patent/GB1569651A/en not_active Expired
- 1977-04-26 SE SE7704805A patent/SE7704805L/ not_active Application Discontinuation
- 1977-04-27 BE BE177052A patent/BE853997A/xx not_active IP Right Cessation
- 1977-04-27 FR FR7712732A patent/FR2361304A1/fr active Granted
- 1977-04-27 JP JP4899777A patent/JPS52155142A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2361304A1 (fr) | 1978-03-10 |
NL7702613A (nl) | 1977-10-31 |
FR2361304B1 (enrdf_load_stackoverflow) | 1981-01-09 |
GB1569651A (en) | 1980-06-18 |
SE7704805L (sv) | 1977-10-28 |
DE2618273B2 (de) | 1978-11-09 |
BE853997A (fr) | 1977-10-27 |
JPS52155142A (en) | 1977-12-23 |
JPS5635604B2 (enrdf_load_stackoverflow) | 1981-08-18 |
IT1086646B (it) | 1985-05-28 |
DE2618273A1 (de) | 1977-11-03 |
DE2618273C3 (de) | 1984-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |