BE853997A - Procede de depot de silicium polycristallin - Google Patents
Procede de depot de silicium polycristallinInfo
- Publication number
- BE853997A BE853997A BE177052A BE177052A BE853997A BE 853997 A BE853997 A BE 853997A BE 177052 A BE177052 A BE 177052A BE 177052 A BE177052 A BE 177052A BE 853997 A BE853997 A BE 853997A
- Authority
- BE
- Belgium
- Prior art keywords
- polycrystalline silicon
- deposit process
- silicon deposit
- polycrystalline
- silicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762618273 DE2618273C3 (de) | 1976-04-27 | 1976-04-27 | Verfahren zur Abscheidung von polykristallinem Silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
BE853997A true BE853997A (fr) | 1977-10-27 |
Family
ID=5976298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE177052A BE853997A (fr) | 1976-04-27 | 1977-04-27 | Procede de depot de silicium polycristallin |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS52155142A (enrdf_load_stackoverflow) |
BE (1) | BE853997A (enrdf_load_stackoverflow) |
CA (1) | CA1092905A (enrdf_load_stackoverflow) |
DE (1) | DE2618273C3 (enrdf_load_stackoverflow) |
FR (1) | FR2361304A1 (enrdf_load_stackoverflow) |
GB (1) | GB1569651A (enrdf_load_stackoverflow) |
IT (1) | IT1086646B (enrdf_load_stackoverflow) |
NL (1) | NL7702613A (enrdf_load_stackoverflow) |
SE (1) | SE7704805L (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5354580A (en) * | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
KR20080005953A (ko) * | 2005-04-10 | 2008-01-15 | 알이씨 실리콘 인코포레이티드 | 다결정 실리콘의 제조 방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1391792A (fr) * | 1962-12-19 | 1965-03-12 | Thomson Houston Comp Francaise | Perfectionnements aux procédés de formation d'un matériau en feuilles, notamment pour feuilles de graphite pyrolytique |
DE1272801B (de) * | 1965-07-14 | 1968-07-11 | Hitco Cardena | Verfahren zur Verkohlung von faserigem Zellulosematerial |
DE2022025C3 (de) * | 1970-05-05 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial |
GB1292534A (en) * | 1970-06-04 | 1972-10-11 | Pfizer | Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties |
DE2229229A1 (de) * | 1972-06-15 | 1974-01-10 | Siemens Ag | Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern |
-
1976
- 1976-04-27 DE DE19762618273 patent/DE2618273C3/de not_active Expired
-
1977
- 1977-03-08 CA CA273,378A patent/CA1092905A/en not_active Expired
- 1977-03-10 NL NL7702613A patent/NL7702613A/xx not_active Application Discontinuation
- 1977-04-22 IT IT4907877A patent/IT1086646B/it active
- 1977-04-25 GB GB1708777A patent/GB1569651A/en not_active Expired
- 1977-04-26 SE SE7704805A patent/SE7704805L/ not_active Application Discontinuation
- 1977-04-27 BE BE177052A patent/BE853997A/xx not_active IP Right Cessation
- 1977-04-27 FR FR7712732A patent/FR2361304A1/fr active Granted
- 1977-04-27 JP JP4899777A patent/JPS52155142A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2361304A1 (fr) | 1978-03-10 |
NL7702613A (nl) | 1977-10-31 |
FR2361304B1 (enrdf_load_stackoverflow) | 1981-01-09 |
GB1569651A (en) | 1980-06-18 |
CA1092905A (en) | 1981-01-06 |
SE7704805L (sv) | 1977-10-28 |
DE2618273B2 (de) | 1978-11-09 |
JPS52155142A (en) | 1977-12-23 |
JPS5635604B2 (enrdf_load_stackoverflow) | 1981-08-18 |
IT1086646B (it) | 1985-05-28 |
DE2618273A1 (de) | 1977-11-03 |
DE2618273C3 (de) | 1984-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE | Patent lapsed |
Owner name: WACKER-CHEMITRONIC GESELLSCHAFT FUR ELEKTRONIK-GR Effective date: 19880430 |