JPS5635604B2 - - Google Patents

Info

Publication number
JPS5635604B2
JPS5635604B2 JP4899777A JP4899777A JPS5635604B2 JP S5635604 B2 JPS5635604 B2 JP S5635604B2 JP 4899777 A JP4899777 A JP 4899777A JP 4899777 A JP4899777 A JP 4899777A JP S5635604 B2 JPS5635604 B2 JP S5635604B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4899777A
Other languages
Japanese (ja)
Other versions
JPS52155142A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS52155142A publication Critical patent/JPS52155142A/ja
Publication of JPS5635604B2 publication Critical patent/JPS5635604B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP4899777A 1976-04-27 1977-04-27 Method of precipitating polycrystalline silicon Granted JPS52155142A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762618273 DE2618273C3 (de) 1976-04-27 1976-04-27 Verfahren zur Abscheidung von polykristallinem Silicium

Publications (2)

Publication Number Publication Date
JPS52155142A JPS52155142A (en) 1977-12-23
JPS5635604B2 true JPS5635604B2 (enrdf_load_stackoverflow) 1981-08-18

Family

ID=5976298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4899777A Granted JPS52155142A (en) 1976-04-27 1977-04-27 Method of precipitating polycrystalline silicon

Country Status (9)

Country Link
JP (1) JPS52155142A (enrdf_load_stackoverflow)
BE (1) BE853997A (enrdf_load_stackoverflow)
CA (1) CA1092905A (enrdf_load_stackoverflow)
DE (1) DE2618273C3 (enrdf_load_stackoverflow)
FR (1) FR2361304A1 (enrdf_load_stackoverflow)
GB (1) GB1569651A (enrdf_load_stackoverflow)
IT (1) IT1086646B (enrdf_load_stackoverflow)
NL (1) NL7702613A (enrdf_load_stackoverflow)
SE (1) SE7704805L (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354580A (en) * 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
KR20080005953A (ko) * 2005-04-10 2008-01-15 알이씨 실리콘 인코포레이티드 다결정 실리콘의 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1391792A (fr) * 1962-12-19 1965-03-12 Thomson Houston Comp Francaise Perfectionnements aux procédés de formation d'un matériau en feuilles, notamment pour feuilles de graphite pyrolytique
DE1272801B (de) * 1965-07-14 1968-07-11 Hitco Cardena Verfahren zur Verkohlung von faserigem Zellulosematerial
DE2022025C3 (de) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial
GB1292534A (en) * 1970-06-04 1972-10-11 Pfizer Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties
DE2229229A1 (de) * 1972-06-15 1974-01-10 Siemens Ag Verfahren zum herstellen von aus silizium oder siliziumcarbid bestehenden formkoerpern

Also Published As

Publication number Publication date
FR2361304A1 (fr) 1978-03-10
NL7702613A (nl) 1977-10-31
FR2361304B1 (enrdf_load_stackoverflow) 1981-01-09
GB1569651A (en) 1980-06-18
CA1092905A (en) 1981-01-06
SE7704805L (sv) 1977-10-28
DE2618273B2 (de) 1978-11-09
BE853997A (fr) 1977-10-27
JPS52155142A (en) 1977-12-23
IT1086646B (it) 1985-05-28
DE2618273A1 (de) 1977-11-03
DE2618273C3 (de) 1984-04-19

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