SE7704805L - PROCEDURE FOR SEPARATION OF POLYCrystalline Silicon - Google Patents

PROCEDURE FOR SEPARATION OF POLYCrystalline Silicon

Info

Publication number
SE7704805L
SE7704805L SE7704805A SE7704805A SE7704805L SE 7704805 L SE7704805 L SE 7704805L SE 7704805 A SE7704805 A SE 7704805A SE 7704805 A SE7704805 A SE 7704805A SE 7704805 L SE7704805 L SE 7704805L
Authority
SE
Sweden
Prior art keywords
polycrystalline silicon
bodies
deposition
silicon
deposited
Prior art date
Application number
SE7704805A
Other languages
Unknown language ( )
Swedish (sv)
Inventor
A Goppinger
R Griesshammer
H Hamster
F Koppl
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of SE7704805L publication Critical patent/SE7704805L/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A process for deposition of polycrystalline silicon from the gas phase on heated carrier bodies of carbon, which comprises assembling the carrier bodies from extremely thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gaseous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystalline silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to monocrystalline materials.
SE7704805A 1976-04-27 1977-04-26 PROCEDURE FOR SEPARATION OF POLYCrystalline Silicon SE7704805L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762618273 DE2618273C3 (en) 1976-04-27 1976-04-27 Process for the deposition of polycrystalline silicon

Publications (1)

Publication Number Publication Date
SE7704805L true SE7704805L (en) 1977-10-28

Family

ID=5976298

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7704805A SE7704805L (en) 1976-04-27 1977-04-26 PROCEDURE FOR SEPARATION OF POLYCrystalline Silicon

Country Status (9)

Country Link
JP (1) JPS52155142A (en)
BE (1) BE853997A (en)
CA (1) CA1092905A (en)
DE (1) DE2618273C3 (en)
FR (1) FR2361304A1 (en)
GB (1) GB1569651A (en)
IT (1) IT1086646B (en)
NL (1) NL7702613A (en)
SE (1) SE7704805L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354580A (en) * 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
CN101218175A (en) * 2005-04-10 2008-07-09 瑞科硅公司 Production of polycrystalline silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1391792A (en) * 1962-12-19 1965-03-12 Thomson Houston Comp Francaise Improvements to processes for forming a sheet material, in particular for pyrolytic graphite sheets
DE1272801B (en) * 1965-07-14 1968-07-11 Hitco Cardena Process for charring cellulosic fibrous material
DE2022025C3 (en) * 1970-05-05 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for producing a hollow body from semiconductor material
GB1292534A (en) * 1970-06-04 1972-10-11 Pfizer Method for making a continuous film of pyrolytic graphite having bi-directional reinforcing properties
DE2229229A1 (en) * 1972-06-15 1974-01-10 Siemens Ag PROCESS FOR PRODUCING MOLDED BODIES FROM SILICON OR SILICON CARBIDE

Also Published As

Publication number Publication date
JPS52155142A (en) 1977-12-23
JPS5635604B2 (en) 1981-08-18
FR2361304A1 (en) 1978-03-10
DE2618273B2 (en) 1978-11-09
IT1086646B (en) 1985-05-28
FR2361304B1 (en) 1981-01-09
NL7702613A (en) 1977-10-31
BE853997A (en) 1977-10-27
GB1569651A (en) 1980-06-18
CA1092905A (en) 1981-01-06
DE2618273A1 (en) 1977-11-03
DE2618273C3 (en) 1984-04-19

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