SE7600278L - METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, WHICH A GLASS COATING IS FORMED ON A THIN SEMICONDUCTOR DISC - Google Patents

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, WHICH A GLASS COATING IS FORMED ON A THIN SEMICONDUCTOR DISC

Info

Publication number
SE7600278L
SE7600278L SE7600278A SE7600278A SE7600278L SE 7600278 L SE7600278 L SE 7600278L SE 7600278 A SE7600278 A SE 7600278A SE 7600278 A SE7600278 A SE 7600278A SE 7600278 L SE7600278 L SE 7600278L
Authority
SE
Sweden
Prior art keywords
glass
coated
dispersion
jan
minutes
Prior art date
Application number
SE7600278A
Other languages
Unknown language ( )
Swedish (sv)
Inventor
M A A A Collaris
H A Debruijn
P G H J Smits
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7600278L publication Critical patent/SE7600278L/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Abstract

1532471 Coating with glass PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 13 Jan 1976 [16 Jan 1975] 01175/76 Heading C1M [Also in Divisions C7 and H1] A semi-conductor slice is coated with glass by electrophoresis using a dispersion of glass particles in a liquid medium, the dispersion having a specific conductivity of not more than 10<SP>-0</SP> ohm.<SP>-1</SP> cm.<SP>-1 </SP>A glass comprising PbO, Al 2 0 3 and SiO 2 , and of particle size 0À1-10 Ám may be used. The liquid medium is preferably an apolar liquid comprising one or more hydrocarbons (e.g. C 9-12 isoparaffins), and may include a polymer binder (e.g. poly(lauryl stearyl methacrylate)). The medium may also include an auxiliary dispersion agent (e.g. comprising a calcium soap of didecyl ester of sulphosuccinic acid, a chromium soap of a mixture of C 8-14 alkyl salicylates, a copolymer of lauryl stearyl methacrylate with 2-methyl, 5-vinyl pyridine, and xylene). The semiconductor (e.g. Si) may be a device in an intermediate or final stage of manufacture, and may be coated using a Pt counter-electrode at 200 V to form a layer of thickness, e.g. 15 Á. The coated semi-conductor may then be heated, e.g. at 500‹ C. for 10 minutes to remove organic matter, and further at 900‹ C. for 7 minutes to fuse the glass.
SE7600278A 1975-01-16 1976-01-13 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, WHICH A GLASS COATING IS FORMED ON A THIN SEMICONDUCTOR DISC SE7600278L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7500492A NL7500492A (en) 1975-01-16 1975-01-16 PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS.

Publications (1)

Publication Number Publication Date
SE7600278L true SE7600278L (en) 1976-07-19

Family

ID=19822999

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7600278A SE7600278L (en) 1975-01-16 1976-01-13 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, WHICH A GLASS COATING IS FORMED ON A THIN SEMICONDUCTOR DISC

Country Status (11)

Country Link
JP (1) JPS556292B2 (en)
AU (1) AU504812B2 (en)
CA (1) CA1047171A (en)
CH (1) CH599677A5 (en)
DE (1) DE2600321C3 (en)
FR (1) FR2298189A1 (en)
GB (1) GB1532471A (en)
IT (1) IT1054204B (en)
MX (1) MX143640A (en)
NL (1) NL7500492A (en)
SE (1) SE7600278L (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN147572B (en) * 1977-02-24 1980-04-19 Rca Corp
IN147578B (en) * 1977-02-24 1980-04-19 Rca Corp
GB2158463B (en) * 1982-04-06 1986-11-19 Stc Plc Forming ceramic films
GB2117796B (en) * 1982-04-06 1985-06-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films
DE4343810C1 (en) * 1993-12-22 1995-04-20 Roland Man Druckmasch Photoelectric measuring head

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303399A (en) * 1964-01-30 1967-02-07 Ibm Glasses for encapsulating semiconductor devices and resultant devices
IE33405B1 (en) * 1968-12-09 1974-06-12 Gen Electric Semiconductor wafers sub-dividable into pellets and methods of fabricating same
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices

Also Published As

Publication number Publication date
DE2600321A1 (en) 1976-07-22
FR2298189A1 (en) 1976-08-13
DE2600321C3 (en) 1981-09-03
MX143640A (en) 1981-06-17
JPS556292B2 (en) 1980-02-15
DE2600321B2 (en) 1980-12-04
CA1047171A (en) 1979-01-23
CH599677A5 (en) 1978-05-31
NL7500492A (en) 1976-07-20
AU1018776A (en) 1977-07-21
AU504812B2 (en) 1979-11-01
GB1532471A (en) 1978-11-15
IT1054204B (en) 1981-11-10
FR2298189B1 (en) 1982-04-16
JPS5197375A (en) 1976-08-26

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