NL7500492A - PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS. - Google Patents

PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS.

Info

Publication number
NL7500492A
NL7500492A NL7500492A NL7500492A NL7500492A NL 7500492 A NL7500492 A NL 7500492A NL 7500492 A NL7500492 A NL 7500492A NL 7500492 A NL7500492 A NL 7500492A NL 7500492 A NL7500492 A NL 7500492A
Authority
NL
Netherlands
Prior art keywords
semi
guide devices
manufacture
manufactured according
glass cover
Prior art date
Application number
NL7500492A
Other languages
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7500492A priority Critical patent/NL7500492A/en
Priority to DE2600321A priority patent/DE2600321C3/en
Priority to CA243,160A priority patent/CA1047171A/en
Priority to AU10187/76A priority patent/AU504812B2/en
Priority to JP251576A priority patent/JPS556292B2/ja
Priority to SE7600278A priority patent/SE7600278L/en
Priority to GB1175/76A priority patent/GB1532471A/en
Priority to CH34376A priority patent/CH599677A5/xx
Priority to IT19210/76A priority patent/IT1054204B/en
Priority to MX163017A priority patent/MX143640A/en
Priority to FR7601087A priority patent/FR2298189A1/en
Publication of NL7500492A publication Critical patent/NL7500492A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Agricultural Chemicals And Associated Chemicals (AREA)
  • Conductive Materials (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7500492A 1975-01-16 1975-01-16 PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS. NL7500492A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NL7500492A NL7500492A (en) 1975-01-16 1975-01-16 PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS.
DE2600321A DE2600321C3 (en) 1975-01-16 1976-01-07 Process for the production of a glass coating on a semiconductor device
CA243,160A CA1047171A (en) 1975-01-16 1976-01-08 Manufacture of semiconductor insulating films by electrophoresis
AU10187/76A AU504812B2 (en) 1975-01-16 1976-01-12 Glass coating semiconductor devices
JP251576A JPS556292B2 (en) 1975-01-16 1976-01-13
SE7600278A SE7600278L (en) 1975-01-16 1976-01-13 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, WHICH A GLASS COATING IS FORMED ON A THIN SEMICONDUCTOR DISC
GB1175/76A GB1532471A (en) 1975-01-16 1976-01-13 Making semiconductor devices
CH34376A CH599677A5 (en) 1975-01-16 1976-01-13
IT19210/76A IT1054204B (en) 1975-01-16 1976-01-13 METHOD FOR THE MANUFACTURE OF SEMICONDUCTIVE DEVICES MANUFACTURED IN ACCORDANCE WITH THIS METHOD
MX163017A MX143640A (en) 1975-01-16 1976-01-13 IMPROVEMENTS IN METHOD FOR MANUFACTURING SEMICONDUCTING DEVICES
FR7601087A FR2298189A1 (en) 1975-01-16 1976-01-16 PROCESS FOR MANUFACTURING SEMICON DEVICES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7500492A NL7500492A (en) 1975-01-16 1975-01-16 PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS.

Publications (1)

Publication Number Publication Date
NL7500492A true NL7500492A (en) 1976-07-20

Family

ID=19822999

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7500492A NL7500492A (en) 1975-01-16 1975-01-16 PROCESS FOR THE MANUFACTURE OF SEMI-GUIDE DEVICES, IN WHICH A GLASS COVER IS APPLIED, AND SEMI-GUIDE DEVICES MANUFACTURED ACCORDING TO THIS PROCESS.

Country Status (11)

Country Link
JP (1) JPS556292B2 (en)
AU (1) AU504812B2 (en)
CA (1) CA1047171A (en)
CH (1) CH599677A5 (en)
DE (1) DE2600321C3 (en)
FR (1) FR2298189A1 (en)
GB (1) GB1532471A (en)
IT (1) IT1054204B (en)
MX (1) MX143640A (en)
NL (1) NL7500492A (en)
SE (1) SE7600278L (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN147572B (en) * 1977-02-24 1980-04-19 Rca Corp
IN147578B (en) * 1977-02-24 1980-04-19 Rca Corp
GB2117796B (en) * 1982-04-06 1985-06-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2158463B (en) * 1982-04-06 1986-11-19 Stc Plc Forming ceramic films
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films
DE4343810C1 (en) * 1993-12-22 1995-04-20 Roland Man Druckmasch Photoelectric measuring head

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303399A (en) * 1964-01-30 1967-02-07 Ibm Glasses for encapsulating semiconductor devices and resultant devices
IE33405B1 (en) * 1968-12-09 1974-06-12 Gen Electric Semiconductor wafers sub-dividable into pellets and methods of fabricating same
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices

Also Published As

Publication number Publication date
JPS5197375A (en) 1976-08-26
JPS556292B2 (en) 1980-02-15
GB1532471A (en) 1978-11-15
CA1047171A (en) 1979-01-23
IT1054204B (en) 1981-11-10
DE2600321A1 (en) 1976-07-22
MX143640A (en) 1981-06-17
CH599677A5 (en) 1978-05-31
AU504812B2 (en) 1979-11-01
SE7600278L (en) 1976-07-19
DE2600321B2 (en) 1980-12-04
FR2298189A1 (en) 1976-08-13
FR2298189B1 (en) 1982-04-16
AU1018776A (en) 1977-07-21
DE2600321C3 (en) 1981-09-03

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BI The patent application has been withdrawn