SE7510418L - Fotodioddetektor samt sett for dess tillverkning - Google Patents

Fotodioddetektor samt sett for dess tillverkning

Info

Publication number
SE7510418L
SE7510418L SE7510418A SE7510418A SE7510418L SE 7510418 L SE7510418 L SE 7510418L SE 7510418 A SE7510418 A SE 7510418A SE 7510418 A SE7510418 A SE 7510418A SE 7510418 L SE7510418 L SE 7510418L
Authority
SE
Sweden
Prior art keywords
detector
sections
photodetector
type
reverse bias
Prior art date
Application number
SE7510418A
Other languages
English (en)
Swedish (sv)
Inventor
J C Dyment
Original Assignee
Northern Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co filed Critical Northern Electric Co
Publication of SE7510418L publication Critical patent/SE7510418L/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SE7510418A 1974-09-17 1975-09-17 Fotodioddetektor samt sett for dess tillverkning SE7510418L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA209,401A CA1003938A (en) 1974-09-17 1974-09-17 Photodiode detector with selective frequency response

Publications (1)

Publication Number Publication Date
SE7510418L true SE7510418L (sv) 1976-03-18

Family

ID=4101165

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510418A SE7510418L (sv) 1974-09-17 1975-09-17 Fotodioddetektor samt sett for dess tillverkning

Country Status (7)

Country Link
JP (1) JPS6057233B2 (enExample)
CA (1) CA1003938A (enExample)
DE (2) DE7529280U (enExample)
FR (1) FR2285720A1 (enExample)
GB (1) GB1519466A (enExample)
NL (1) NL7510863A (enExample)
SE (1) SE7510418L (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136202B (en) * 1983-03-02 1987-01-14 Int Standard Electric Corp Photodiode
JPS61204987A (ja) * 1985-03-08 1986-09-11 Nippon Telegr & Teleph Corp <Ntt> 半導体発受光装置
JPS639358A (ja) * 1986-06-30 1988-01-16 Fuji Xerox Co Ltd 原稿読取装置
JPH0746721B2 (ja) * 1986-09-09 1995-05-17 富士ゼロックス株式会社 イメ−ジセンサおよびその製造方法
US4757210A (en) * 1987-03-02 1988-07-12 Rockwell International Corporation Edge illuminated detector arrays for determination of spectral content
GB2228824A (en) * 1989-03-01 1990-09-05 Gen Electric Co Plc Radiation detectors
KR100560309B1 (ko) * 2003-12-31 2006-03-14 동부아남반도체 주식회사 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법

Also Published As

Publication number Publication date
CA1003938A (en) 1977-01-18
DE2541224A1 (de) 1976-03-25
DE7529280U (de) 1980-01-24
JPS5154387A (enExample) 1976-05-13
GB1519466A (en) 1978-07-26
JPS6057233B2 (ja) 1985-12-13
FR2285720A1 (fr) 1976-04-16
NL7510863A (nl) 1976-03-19
FR2285720B1 (enExample) 1978-11-03

Similar Documents

Publication Publication Date Title
US3886579A (en) Avalanche photodiode
US5190883A (en) Method for making an integrated light guide detector structure made of a semiconductive material
US5365101A (en) Photo-sensing device
US6104047A (en) Avalanche photodiode with thin built-in depletion region
US5132747A (en) Avalanche photo diode
CN110931575B (zh) 与dbr包层及反射镜单片集成的波导光探测器
US20190019903A1 (en) SILICON WAVEGUIDE INTEGRATED WITH SILICON-GERMANIUM (Si-Ge) AVALANCHE PHOTODIODE DETECTOR
GB1576177A (en) Phototransistors
Forrest Optical detectors: Three contenders: Depending on the application, the photoeonductor, pin diode, or avalanche photodiode may prove the best choice
US7553690B2 (en) Starved source diffusion for avalanche photodiode
SE7510418L (sv) Fotodioddetektor samt sett for dess tillverkning
JPH04111478A (ja) 受光素子
US3703408A (en) Photosensitive semiconductor device
JP2009004812A (ja) アバランシェホトダイオード
JP2633234B2 (ja) 光半導体素子
JPS61229371A (ja) フオトダイオ−ド
JP3030394B2 (ja) 半導体受光素子
JP3739273B2 (ja) 半導体光検出器
JP3224192B2 (ja) 半導体導波路型受光器
JP2850985B2 (ja) 半導体導波路型受光素子
JPS60198786A (ja) 半導体受光素子
JP3055030B2 (ja) アバランシェ・フォトダイオードの製造方法
JPS56107588A (en) Semiconductor light emitting element
JPS63237484A (ja) 半導体装置
Zebda et al. Frequency and time response of PIN photodiode

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 7510418-2