DE7529280U - Photodioden-detektor - Google Patents
Photodioden-detektorInfo
- Publication number
- DE7529280U DE7529280U DE19757529280U DE7529280U DE7529280U DE 7529280 U DE7529280 U DE 7529280U DE 19757529280 U DE19757529280 U DE 19757529280U DE 7529280 U DE7529280 U DE 7529280U DE 7529280 U DE7529280 U DE 7529280U
- Authority
- DE
- Germany
- Prior art keywords
- layer
- substrate
- doped gallium
- arsenide
- delimitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims 4
- 238000010521 absorption reaction Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA209,401A CA1003938A (en) | 1974-09-17 | 1974-09-17 | Photodiode detector with selective frequency response |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE7529280U true DE7529280U (de) | 1980-01-24 |
Family
ID=4101165
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19757529280U Expired DE7529280U (de) | 1974-09-17 | 1975-09-16 | Photodioden-detektor |
| DE19752541224 Pending DE2541224A1 (de) | 1974-09-17 | 1975-09-16 | Photodioden-detektor mit selektivem frequenz-ansprechverhalten |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752541224 Pending DE2541224A1 (de) | 1974-09-17 | 1975-09-16 | Photodioden-detektor mit selektivem frequenz-ansprechverhalten |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS6057233B2 (enExample) |
| CA (1) | CA1003938A (enExample) |
| DE (2) | DE7529280U (enExample) |
| FR (1) | FR2285720A1 (enExample) |
| GB (1) | GB1519466A (enExample) |
| NL (1) | NL7510863A (enExample) |
| SE (1) | SE7510418L (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2136202B (en) * | 1983-03-02 | 1987-01-14 | Int Standard Electric Corp | Photodiode |
| JPS61204987A (ja) * | 1985-03-08 | 1986-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発受光装置 |
| JPS639358A (ja) * | 1986-06-30 | 1988-01-16 | Fuji Xerox Co Ltd | 原稿読取装置 |
| JPH0746721B2 (ja) * | 1986-09-09 | 1995-05-17 | 富士ゼロックス株式会社 | イメ−ジセンサおよびその製造方法 |
| US4757210A (en) * | 1987-03-02 | 1988-07-12 | Rockwell International Corporation | Edge illuminated detector arrays for determination of spectral content |
| GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
| KR100560309B1 (ko) * | 2003-12-31 | 2006-03-14 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법 |
-
1974
- 1974-09-17 CA CA209,401A patent/CA1003938A/en not_active Expired
-
1975
- 1975-08-14 GB GB33937/75A patent/GB1519466A/en not_active Expired
- 1975-09-04 JP JP50106594A patent/JPS6057233B2/ja not_active Expired
- 1975-09-16 DE DE19757529280U patent/DE7529280U/de not_active Expired
- 1975-09-16 NL NL7510863A patent/NL7510863A/xx not_active Application Discontinuation
- 1975-09-16 DE DE19752541224 patent/DE2541224A1/de active Pending
- 1975-09-17 SE SE7510418A patent/SE7510418L/xx not_active Application Discontinuation
- 1975-09-17 FR FR7528518A patent/FR2285720A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1003938A (en) | 1977-01-18 |
| DE2541224A1 (de) | 1976-03-25 |
| JPS5154387A (enExample) | 1976-05-13 |
| GB1519466A (en) | 1978-07-26 |
| JPS6057233B2 (ja) | 1985-12-13 |
| FR2285720A1 (fr) | 1976-04-16 |
| SE7510418L (sv) | 1976-03-18 |
| NL7510863A (nl) | 1976-03-19 |
| FR2285720B1 (enExample) | 1978-11-03 |
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