GB1519466A - Photodiode detector - Google Patents
Photodiode detectorInfo
- Publication number
- GB1519466A GB1519466A GB33937/75A GB3393775A GB1519466A GB 1519466 A GB1519466 A GB 1519466A GB 33937/75 A GB33937/75 A GB 33937/75A GB 3393775 A GB3393775 A GB 3393775A GB 1519466 A GB1519466 A GB 1519466A
- Authority
- GB
- United Kingdom
- Prior art keywords
- detector
- sections
- photodiode detector
- photodetector
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA209,401A CA1003938A (en) | 1974-09-17 | 1974-09-17 | Photodiode detector with selective frequency response |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1519466A true GB1519466A (en) | 1978-07-26 |
Family
ID=4101165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33937/75A Expired GB1519466A (en) | 1974-09-17 | 1975-08-14 | Photodiode detector |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS6057233B2 (enExample) |
| CA (1) | CA1003938A (enExample) |
| DE (2) | DE7529280U (enExample) |
| FR (1) | FR2285720A1 (enExample) |
| GB (1) | GB1519466A (enExample) |
| NL (1) | NL7510863A (enExample) |
| SE (1) | SE7510418L (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2136202A (en) * | 1983-03-02 | 1984-09-12 | Int Standard Electric Corp | Photodiode |
| GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61204987A (ja) * | 1985-03-08 | 1986-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発受光装置 |
| JPS639358A (ja) * | 1986-06-30 | 1988-01-16 | Fuji Xerox Co Ltd | 原稿読取装置 |
| JPH0746721B2 (ja) * | 1986-09-09 | 1995-05-17 | 富士ゼロックス株式会社 | イメ−ジセンサおよびその製造方法 |
| US4757210A (en) * | 1987-03-02 | 1988-07-12 | Rockwell International Corporation | Edge illuminated detector arrays for determination of spectral content |
| KR100560309B1 (ko) * | 2003-12-31 | 2006-03-14 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법 |
-
1974
- 1974-09-17 CA CA209,401A patent/CA1003938A/en not_active Expired
-
1975
- 1975-08-14 GB GB33937/75A patent/GB1519466A/en not_active Expired
- 1975-09-04 JP JP50106594A patent/JPS6057233B2/ja not_active Expired
- 1975-09-16 DE DE19757529280U patent/DE7529280U/de not_active Expired
- 1975-09-16 NL NL7510863A patent/NL7510863A/xx not_active Application Discontinuation
- 1975-09-16 DE DE19752541224 patent/DE2541224A1/de active Pending
- 1975-09-17 SE SE7510418A patent/SE7510418L/xx not_active Application Discontinuation
- 1975-09-17 FR FR7528518A patent/FR2285720A1/fr active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2136202A (en) * | 1983-03-02 | 1984-09-12 | Int Standard Electric Corp | Photodiode |
| GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1003938A (en) | 1977-01-18 |
| DE2541224A1 (de) | 1976-03-25 |
| DE7529280U (de) | 1980-01-24 |
| JPS5154387A (enExample) | 1976-05-13 |
| JPS6057233B2 (ja) | 1985-12-13 |
| FR2285720A1 (fr) | 1976-04-16 |
| SE7510418L (sv) | 1976-03-18 |
| NL7510863A (nl) | 1976-03-19 |
| FR2285720B1 (enExample) | 1978-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3886579A (en) | Avalanche photodiode | |
| JP3141847B2 (ja) | アバランシェフォトダイオード | |
| US5190883A (en) | Method for making an integrated light guide detector structure made of a semiconductive material | |
| CN110931575B (zh) | 与dbr包层及反射镜单片集成的波导光探测器 | |
| JP3016858B2 (ja) | シリコン層を備えた半導体デバイス | |
| US5132747A (en) | Avalanche photo diode | |
| US20190019903A1 (en) | SILICON WAVEGUIDE INTEGRATED WITH SILICON-GERMANIUM (Si-Ge) AVALANCHE PHOTODIODE DETECTOR | |
| Forrest | Optical detectors: Three contenders: Depending on the application, the photoeonductor, pin diode, or avalanche photodiode may prove the best choice | |
| US7553690B2 (en) | Starved source diffusion for avalanche photodiode | |
| GB1519466A (en) | Photodiode detector | |
| CA1261451A (en) | Silicon germanium photodetector | |
| Tarof et al. | Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings | |
| KR19980044005A (ko) | 애벌런치 포토다이오드 및 그 제조방법 | |
| JPH11330536A (ja) | 半導体受光素子 | |
| JPS61229371A (ja) | フオトダイオ−ド | |
| JP3030394B2 (ja) | 半導体受光素子 | |
| JP3739273B2 (ja) | 半導体光検出器 | |
| JPH09223805A (ja) | 半導体導波路型受光器 | |
| JP2850985B2 (ja) | 半導体導波路型受光素子 | |
| JPS56107588A (en) | Semiconductor light emitting element | |
| JP3055030B2 (ja) | アバランシェ・フォトダイオードの製造方法 | |
| JP2969143B2 (ja) | 半導体受光素子 | |
| JPH0382085A (ja) | 半導体受光素子及びその製造方法 | |
| KR960001191B1 (ko) | 애벌런치 포토다이오드의 제조방법 | |
| KR970004492B1 (ko) | 가드링 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |