FR2285720A1 - Diode photodetectrice a reponse en frequence selective - Google Patents

Diode photodetectrice a reponse en frequence selective

Info

Publication number
FR2285720A1
FR2285720A1 FR7528518A FR7528518A FR2285720A1 FR 2285720 A1 FR2285720 A1 FR 2285720A1 FR 7528518 A FR7528518 A FR 7528518A FR 7528518 A FR7528518 A FR 7528518A FR 2285720 A1 FR2285720 A1 FR 2285720A1
Authority
FR
France
Prior art keywords
frequency response
selective frequency
photodetector diode
response photodetector
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7528518A
Other languages
English (en)
French (fr)
Other versions
FR2285720B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co Ltd filed Critical Northern Electric Co Ltd
Publication of FR2285720A1 publication Critical patent/FR2285720A1/fr
Application granted granted Critical
Publication of FR2285720B1 publication Critical patent/FR2285720B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
FR7528518A 1974-09-17 1975-09-17 Diode photodetectrice a reponse en frequence selective Granted FR2285720A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA209,401A CA1003938A (en) 1974-09-17 1974-09-17 Photodiode detector with selective frequency response

Publications (2)

Publication Number Publication Date
FR2285720A1 true FR2285720A1 (fr) 1976-04-16
FR2285720B1 FR2285720B1 (enExample) 1978-11-03

Family

ID=4101165

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528518A Granted FR2285720A1 (fr) 1974-09-17 1975-09-17 Diode photodetectrice a reponse en frequence selective

Country Status (7)

Country Link
JP (1) JPS6057233B2 (enExample)
CA (1) CA1003938A (enExample)
DE (2) DE7529280U (enExample)
FR (1) FR2285720A1 (enExample)
GB (1) GB1519466A (enExample)
NL (1) NL7510863A (enExample)
SE (1) SE7510418L (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0281011A3 (en) * 1987-03-02 1989-08-16 Rockwell International Corporation Edge-illuminated impurity band conduction detector arrays
EP1551061A3 (en) * 2003-12-31 2007-09-26 Dongbu Electronics Co., Ltd. Cmos image sensor and method for detecting color sensitivity thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136202B (en) * 1983-03-02 1987-01-14 Int Standard Electric Corp Photodiode
JPS61204987A (ja) * 1985-03-08 1986-09-11 Nippon Telegr & Teleph Corp <Ntt> 半導体発受光装置
JPS639358A (ja) * 1986-06-30 1988-01-16 Fuji Xerox Co Ltd 原稿読取装置
JPH0746721B2 (ja) * 1986-09-09 1995-05-17 富士ゼロックス株式会社 イメ−ジセンサおよびその製造方法
GB2228824A (en) * 1989-03-01 1990-09-05 Gen Electric Co Plc Radiation detectors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0281011A3 (en) * 1987-03-02 1989-08-16 Rockwell International Corporation Edge-illuminated impurity band conduction detector arrays
EP1551061A3 (en) * 2003-12-31 2007-09-26 Dongbu Electronics Co., Ltd. Cmos image sensor and method for detecting color sensitivity thereof

Also Published As

Publication number Publication date
CA1003938A (en) 1977-01-18
DE2541224A1 (de) 1976-03-25
DE7529280U (de) 1980-01-24
JPS5154387A (enExample) 1976-05-13
GB1519466A (en) 1978-07-26
JPS6057233B2 (ja) 1985-12-13
SE7510418L (sv) 1976-03-18
NL7510863A (nl) 1976-03-19
FR2285720B1 (enExample) 1978-11-03

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Legal Events

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CD Change of name or company name
ST Notification of lapse