SE520385C2 - Ljusemitterande halvledaranordning och metod för tillverkning av anordningen - Google Patents
Ljusemitterande halvledaranordning och metod för tillverkning av anordningenInfo
- Publication number
- SE520385C2 SE520385C2 SE0002996A SE0002996A SE520385C2 SE 520385 C2 SE520385 C2 SE 520385C2 SE 0002996 A SE0002996 A SE 0002996A SE 0002996 A SE0002996 A SE 0002996A SE 520385 C2 SE520385 C2 SE 520385C2
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- type
- light emitting
- gaas substrate
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000007788 roughening Methods 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 232
- 238000000034 method Methods 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 21
- 238000000149 argon plasma sintering Methods 0.000 claims description 11
- 238000000206 photolithography Methods 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 5
- 108091027981 Response element Proteins 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 14
- 238000001228 spectrum Methods 0.000 abstract description 6
- 210000001015 abdomen Anatomy 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000003892 spreading Methods 0.000 description 20
- 230000007480 spreading Effects 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000006187 pill Substances 0.000 description 9
- 238000010276 construction Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 210000000056 organ Anatomy 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000013308 plastic optical fiber Substances 0.000 description 1
- 239000013309 porous organic framework Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23822599A JP3586594B2 (ja) | 1999-08-25 | 1999-08-25 | 半導体発光素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE0002996D0 SE0002996D0 (sv) | 2000-08-24 |
| SE0002996L SE0002996L (sv) | 2001-02-26 |
| SE520385C2 true SE520385C2 (sv) | 2003-07-01 |
Family
ID=17027018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0002996A SE520385C2 (sv) | 1999-08-25 | 2000-08-24 | Ljusemitterande halvledaranordning och metod för tillverkning av anordningen |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6794687B1 (ja) |
| JP (1) | JP3586594B2 (ja) |
| SE (1) | SE520385C2 (ja) |
| TW (1) | TW461122B (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3547344B2 (ja) * | 1999-08-24 | 2004-07-28 | シャープ株式会社 | 半導体発光素子 |
| JP2003309283A (ja) | 2002-04-17 | 2003-10-31 | Sharp Corp | 半導体発光素子 |
| JP2004031513A (ja) | 2002-06-24 | 2004-01-29 | Sharp Corp | 半導体発光素子 |
| JP2005005679A (ja) * | 2003-04-15 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
| US7777235B2 (en) * | 2003-05-05 | 2010-08-17 | Lighting Science Group Corporation | Light emitting diodes with improved light collimation |
| US7184632B2 (en) * | 2003-05-27 | 2007-02-27 | Cornell Research Foundation, Inc. | Light scattering optical resonator |
| JP4986445B2 (ja) | 2005-12-13 | 2012-07-25 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| US9318327B2 (en) * | 2006-11-28 | 2016-04-19 | Cree, Inc. | Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same |
| DE102010044738A1 (de) | 2010-09-08 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Dünnschichtverkapselung, optoelektronischer Halbleiterkörper mit einer Dünnschichtverkapselung und Verfahren zur Herstellung einer Dünnschichtverkapselung |
| KR101730152B1 (ko) * | 2010-10-06 | 2017-04-25 | 엘지이노텍 주식회사 | 발광 소자 |
| CN105870288B (zh) * | 2016-04-27 | 2018-08-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
| CN110957406B (zh) * | 2019-12-05 | 2022-05-27 | 南京邮电大学 | 一种电驱动光栅波分复用器件及其制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57106246A (en) | 1980-12-23 | 1982-07-02 | Nec Corp | Radio communication system |
| JP2744503B2 (ja) | 1990-02-05 | 1998-04-28 | 日本電信電話株式会社 | 面形発光素子 |
| JP2961964B2 (ja) * | 1991-07-10 | 1999-10-12 | 日本電気株式会社 | 半導体レーザ装置 |
| US5226053A (en) | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
| US5428634A (en) * | 1992-11-05 | 1995-06-27 | The United States Of America As Represented By The United States Department Of Energy | Visible light emitting vertical cavity surface emitting lasers |
| DE4240706A1 (de) * | 1992-12-03 | 1994-06-09 | Siemens Ag | Oberflächenemittierende Laserdiode |
| EP0614255B1 (en) * | 1993-03-04 | 1997-09-10 | AT&T Corp. | Article comprising a focusing surface emitting semiconductor laser |
| JP3207590B2 (ja) * | 1993-03-15 | 2001-09-10 | 富士通株式会社 | 光半導体装置 |
| JP2836687B2 (ja) | 1993-04-03 | 1998-12-14 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| US5491710A (en) * | 1994-05-05 | 1996-02-13 | Cornell Research Foundation, Inc. | Strain-compensated multiple quantum well laser structures |
| JP3333330B2 (ja) | 1994-09-30 | 2002-10-15 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| DE19506323A1 (de) * | 1995-02-23 | 1996-08-29 | Siemens Ag | Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche |
| US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| US6167072A (en) * | 1997-06-06 | 2000-12-26 | University Of Florida | Modulated cap thin p-clad semiconductor laser |
| US6055262A (en) * | 1997-06-11 | 2000-04-25 | Honeywell Inc. | Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| JPH1158232A (ja) * | 1997-08-26 | 1999-03-02 | Toshiba Ceramics Co Ltd | ドレッシング工具及びその製造方法 |
| JP3932466B2 (ja) * | 1997-09-25 | 2007-06-20 | 富士フイルム株式会社 | 半導体レーザ |
| US5966399A (en) * | 1997-10-02 | 1999-10-12 | Motorola, Inc. | Vertical cavity surface emitting laser with integrated diffractive lens and method of fabrication |
| JP3763667B2 (ja) * | 1998-04-23 | 2006-04-05 | 株式会社東芝 | 半導体発光素子 |
| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
| JP5019664B2 (ja) | 1998-07-28 | 2012-09-05 | アイメック | 高効率で光を発するデバイスおよびそのようなデバイスの製造方法 |
| US6176071B1 (en) * | 1999-09-10 | 2001-01-23 | Deere & Company | Tensioning idler assembly for mower deck belt drive |
| JP3689621B2 (ja) * | 2000-09-04 | 2005-08-31 | シャープ株式会社 | 半導体発光素子 |
| TW576864B (en) * | 2001-12-28 | 2004-02-21 | Toshiba Corp | Method for manufacturing a light-emitting device |
-
1999
- 1999-08-25 JP JP23822599A patent/JP3586594B2/ja not_active Expired - Fee Related
-
2000
- 2000-08-17 TW TW089116631A patent/TW461122B/zh not_active IP Right Cessation
- 2000-08-24 SE SE0002996A patent/SE520385C2/sv not_active IP Right Cessation
- 2000-08-25 US US09/645,571 patent/US6794687B1/en not_active Expired - Lifetime
-
2004
- 2004-07-28 US US10/900,212 patent/US7348195B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001068727A (ja) | 2001-03-16 |
| SE0002996D0 (sv) | 2000-08-24 |
| US20050001222A1 (en) | 2005-01-06 |
| US7348195B2 (en) | 2008-03-25 |
| JP3586594B2 (ja) | 2004-11-10 |
| TW461122B (en) | 2001-10-21 |
| US6794687B1 (en) | 2004-09-21 |
| SE0002996L (sv) | 2001-02-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |