SE0002996L - Ljusemitterande halvledaranordning och metod för tillverkning av anordningen - Google Patents

Ljusemitterande halvledaranordning och metod för tillverkning av anordningen

Info

Publication number
SE0002996L
SE0002996L SE0002996A SE0002996A SE0002996L SE 0002996 L SE0002996 L SE 0002996L SE 0002996 A SE0002996 A SE 0002996A SE 0002996 A SE0002996 A SE 0002996A SE 0002996 L SE0002996 L SE 0002996L
Authority
SE
Sweden
Prior art keywords
light
type
layer
dbr
emitting
Prior art date
Application number
SE0002996A
Other languages
English (en)
Other versions
SE520385C2 (sv
SE0002996D0 (sv
Inventor
Takahisa Kurahashi
Hiroshi Nakatsu
Hiroyuki Hosoba
Tetsurou Murakami
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of SE0002996D0 publication Critical patent/SE0002996D0/sv
Publication of SE0002996L publication Critical patent/SE0002996L/sv
Publication of SE520385C2 publication Critical patent/SE520385C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
SE0002996A 1999-08-25 2000-08-24 Ljusemitterande halvledaranordning och metod för tillverkning av anordningen SE520385C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23822599A JP3586594B2 (ja) 1999-08-25 1999-08-25 半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
SE0002996D0 SE0002996D0 (sv) 2000-08-24
SE0002996L true SE0002996L (sv) 2001-02-26
SE520385C2 SE520385C2 (sv) 2003-07-01

Family

ID=17027018

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0002996A SE520385C2 (sv) 1999-08-25 2000-08-24 Ljusemitterande halvledaranordning och metod för tillverkning av anordningen

Country Status (4)

Country Link
US (2) US6794687B1 (sv)
JP (1) JP3586594B2 (sv)
SE (1) SE520385C2 (sv)
TW (1) TW461122B (sv)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3547344B2 (ja) * 1999-08-24 2004-07-28 シャープ株式会社 半導体発光素子
JP2003309283A (ja) 2002-04-17 2003-10-31 Sharp Corp 半導体発光素子
JP2004031513A (ja) 2002-06-24 2004-01-29 Sharp Corp 半導体発光素子
JP2005005679A (ja) * 2003-04-15 2005-01-06 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
US7777235B2 (en) * 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7184632B2 (en) * 2003-05-27 2007-02-27 Cornell Research Foundation, Inc. Light scattering optical resonator
JP4986445B2 (ja) 2005-12-13 2012-07-25 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
US9318327B2 (en) * 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
DE102010044738A1 (de) 2010-09-08 2012-03-08 Osram Opto Semiconductors Gmbh Dünnschichtverkapselung, optoelektronischer Halbleiterkörper mit einer Dünnschichtverkapselung und Verfahren zur Herstellung einer Dünnschichtverkapselung
KR101730152B1 (ko) * 2010-10-06 2017-04-25 엘지이노텍 주식회사 발광 소자
CN105870288B (zh) * 2016-04-27 2018-08-14 天津三安光电有限公司 发光二极管及其制作方法
CN110957406B (zh) * 2019-12-05 2022-05-27 南京邮电大学 一种电驱动光栅波分复用器件及其制备方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106246A (en) 1980-12-23 1982-07-02 Nec Corp Radio communication system
JP2744503B2 (ja) 1990-02-05 1998-04-28 日本電信電話株式会社 面形発光素子
JP2961964B2 (ja) * 1991-07-10 1999-10-12 日本電気株式会社 半導体レーザ装置
US5226053A (en) 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5428634A (en) * 1992-11-05 1995-06-27 The United States Of America As Represented By The United States Department Of Energy Visible light emitting vertical cavity surface emitting lasers
DE4240706A1 (de) * 1992-12-03 1994-06-09 Siemens Ag Oberflächenemittierende Laserdiode
DE69405427T2 (de) * 1993-03-04 1998-04-02 At & T Corp Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser
JP3207590B2 (ja) * 1993-03-15 2001-09-10 富士通株式会社 光半導体装置
JP2836687B2 (ja) 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US5491710A (en) * 1994-05-05 1996-02-13 Cornell Research Foundation, Inc. Strain-compensated multiple quantum well laser structures
JP3333330B2 (ja) 1994-09-30 2002-10-15 株式会社東芝 半導体発光素子及びその製造方法
DE19506323A1 (de) * 1995-02-23 1996-08-29 Siemens Ag Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US6167072A (en) * 1997-06-06 2000-12-26 University Of Florida Modulated cap thin p-clad semiconductor laser
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
JPH1158232A (ja) * 1997-08-26 1999-03-02 Toshiba Ceramics Co Ltd ドレッシング工具及びその製造方法
JP3932466B2 (ja) * 1997-09-25 2007-06-20 富士フイルム株式会社 半導体レーザ
US5966399A (en) * 1997-10-02 1999-10-12 Motorola, Inc. Vertical cavity surface emitting laser with integrated diffractive lens and method of fabrication
JP3763667B2 (ja) * 1998-04-23 2006-04-05 株式会社東芝 半導体発光素子
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
JP5019664B2 (ja) 1998-07-28 2012-09-05 アイメック 高効率で光を発するデバイスおよびそのようなデバイスの製造方法
US6176071B1 (en) * 1999-09-10 2001-01-23 Deere & Company Tensioning idler assembly for mower deck belt drive
JP3689621B2 (ja) * 2000-09-04 2005-08-31 シャープ株式会社 半導体発光素子
TW576864B (en) * 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device

Also Published As

Publication number Publication date
US6794687B1 (en) 2004-09-21
JP3586594B2 (ja) 2004-11-10
SE520385C2 (sv) 2003-07-01
SE0002996D0 (sv) 2000-08-24
TW461122B (en) 2001-10-21
US20050001222A1 (en) 2005-01-06
JP2001068727A (ja) 2001-03-16
US7348195B2 (en) 2008-03-25

Similar Documents

Publication Publication Date Title
US4943970A (en) Surface emitting laser
SE0002996L (sv) Ljusemitterande halvledaranordning och metod för tillverkning av anordningen
EP1072072B1 (en) Surface-emitting optical device
US7345298B2 (en) Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
JPH07500950A (ja) 可視光表面照射半導体レーザ
DE69908935D1 (de) Hochleistungshalbleiterlaser mit verteilter rückkopplung und schmaler spektraler emissionsbreite
EP1251569A3 (en) Light-emitting device and light-emitting apparatus using the same
US7620087B2 (en) Radiation-emitting semiconductor component
US20040179566A1 (en) Multi-color stacked semiconductor lasers
EP0977277A1 (en) Devices for emitting radiation with a high efficiency and a method for fabricating such devices
WO2004030032A3 (en) Type ii quantum well optoelectronic devices
WO2020247291A1 (en) Vertical-cavity surface-emitting laser using dichroic reflectors
JPH10190050A (ja) 発光ダイオード
US6445010B1 (en) Optoelectronic component emitting incoherent radiation
US7633982B2 (en) Optically pumped surface emitting semiconductor laser device
US7848379B2 (en) LED-based optical pumping for laser light generation
EP0473983B1 (en) Light emitting device utilizing cavity quantum electrodynamics
JPS56135994A (en) Semiconductor light emitting device
US20080089379A1 (en) Semiconductor Laser Device and Method for its Production
Dill et al. Effect of detuning on the angular emission pattern of high-efficiency microcavity light-emitting diodes
JP2003273442A (ja) 半導体レーザ装置及びその製造方法
JPH0715035A (ja) 半導体発光装置
DE3681794D1 (de) Halbleiterlaser mit mitteln zur wiedereinleitung der spontanen emission in die aktive schicht.
Blondelle et al. High efficiency (> 20%) microcavity LEDs
JPH06502281A (ja) 表面発射発光ダイオード

Legal Events

Date Code Title Description
NUG Patent has lapsed