SE516338C2 - RF-effekttransistor med kollektor upp - Google Patents
RF-effekttransistor med kollektor uppInfo
- Publication number
- SE516338C2 SE516338C2 SE9902005A SE9902005A SE516338C2 SE 516338 C2 SE516338 C2 SE 516338C2 SE 9902005 A SE9902005 A SE 9902005A SE 9902005 A SE9902005 A SE 9902005A SE 516338 C2 SE516338 C2 SE 516338C2
- Authority
- SE
- Sweden
- Prior art keywords
- collector
- base
- silicon
- emitter
- further step
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 230000003071 parasitic effect Effects 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 14
- 238000001465 metallisation Methods 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9902005A SE516338C2 (sv) | 1999-05-31 | 1999-05-31 | RF-effekttransistor med kollektor upp |
| TW088109812A TW448580B (en) | 1999-05-31 | 1999-06-11 | Collector-up RF power transistor |
| CNB008082537A CN1149648C (zh) | 1999-05-31 | 2000-05-19 | 集电极朝上的射频功率晶体管及其制造方法 |
| JP2001500329A JP2003501802A (ja) | 1999-05-31 | 2000-05-19 | コレクタ高位ｒｆパワートランジスタ |
| AU52604/00A AU5260400A (en) | 1999-05-31 | 2000-05-19 | Collector-up rf power transistor |
| KR10-2001-7014855A KR100434659B1 (ko) | 1999-05-31 | 2000-05-19 | 콜렉터-업 ｒｆ 전력 트랜지스터 |
| CA002373580A CA2373580A1 (en) | 1999-05-31 | 2000-05-19 | Collector-up rf power transistor |
| EP00937430A EP1192651A1 (en) | 1999-05-31 | 2000-05-19 | Collector-up rf power transistor |
| PCT/SE2000/001002 WO2000074129A1 (en) | 1999-05-31 | 2000-05-19 | Collector-up rf power transistor |
| US09/583,648 US6329259B1 (en) | 1999-05-31 | 2000-05-30 | Collector-up RF power transistor |
| HK02107412.3A HK1045910A1 (zh) | 1999-05-31 | 2002-10-10 | 集電極朝上的射頻功率晶體管 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9902005A SE516338C2 (sv) | 1999-05-31 | 1999-05-31 | RF-effekttransistor med kollektor upp |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9902005D0 SE9902005D0 (sv) | 1999-05-31 |
| SE9902005L SE9902005L (sv) | 2000-12-01 |
| SE516338C2 true SE516338C2 (sv) | 2001-12-17 |
Family
ID=20415834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9902005A SE516338C2 (sv) | 1999-05-31 | 1999-05-31 | RF-effekttransistor med kollektor upp |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6329259B1 (zh) |
| EP (1) | EP1192651A1 (zh) |
| JP (1) | JP2003501802A (zh) |
| KR (1) | KR100434659B1 (zh) |
| CN (1) | CN1149648C (zh) |
| AU (1) | AU5260400A (zh) |
| CA (1) | CA2373580A1 (zh) |
| HK (1) | HK1045910A1 (zh) |
| SE (1) | SE516338C2 (zh) |
| TW (1) | TW448580B (zh) |
| WO (1) | WO2000074129A1 (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329675B2 (en) * | 1999-08-06 | 2001-12-11 | Cree, Inc. | Self-aligned bipolar junction silicon carbide transistors |
| WO2002049115A1 (en) * | 2000-12-11 | 2002-06-20 | Cree, Inc. | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
| US6699765B1 (en) | 2002-08-29 | 2004-03-02 | Micrel, Inc. | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
| JP4258205B2 (ja) * | 2002-11-11 | 2009-04-30 | パナソニック株式会社 | 半導体装置 |
| JP4949650B2 (ja) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN101162730B (zh) * | 2007-11-13 | 2010-04-07 | 清华大学 | 多晶收集区倒置结构SiGe异质结晶体管 |
| US7932541B2 (en) * | 2008-01-14 | 2011-04-26 | International Business Machines Corporation | High performance collector-up bipolar transistor |
| JP2019075424A (ja) * | 2017-10-13 | 2019-05-16 | 株式会社村田製作所 | ヘテロ接合バイポーラトランジスタ |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8708926D0 (en) * | 1987-04-14 | 1987-05-20 | British Telecomm | Bipolar transistor |
| US5198689A (en) * | 1988-11-30 | 1993-03-30 | Fujitsu Limited | Heterojunction bipolar transistor |
| JP3011729B2 (ja) * | 1990-01-16 | 2000-02-21 | 沖電気工業株式会社 | バイポーラ型半導体集積回路装置の製造方法 |
| JPH0785476B2 (ja) * | 1991-06-14 | 1995-09-13 | インターナショナル・ビジネス・マシーンズ・コーポレイション | エミッタ埋め込み型バイポーラ・トランジスタ構造 |
| EP0550962A3 (en) * | 1992-01-08 | 1993-09-29 | American Telephone And Telegraph Company | Heterojunction bipolar transistor |
| JP3084541B2 (ja) * | 1992-09-18 | 2000-09-04 | シャープ株式会社 | 縦型構造トランジスタ |
| US5700701A (en) * | 1992-10-30 | 1997-12-23 | Texas Instruments Incorporated | Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors |
| US5798539A (en) * | 1992-12-10 | 1998-08-25 | Daimler Benz Ag | Bipolar transistor for very high frequencies |
| MY115336A (en) | 1994-02-18 | 2003-05-31 | Ericsson Telefon Ab L M | Electromigration resistant metallization structures and process for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold |
| US5485025A (en) * | 1994-12-02 | 1996-01-16 | Texas Instruments Incorporated | Depleted extrinsic emitter of collector-up heterojunction bipolar transistor |
-
1999
- 1999-05-31 SE SE9902005A patent/SE516338C2/sv not_active IP Right Cessation
- 1999-06-11 TW TW088109812A patent/TW448580B/zh active
-
2000
- 2000-05-19 EP EP00937430A patent/EP1192651A1/en not_active Withdrawn
- 2000-05-19 CN CNB008082537A patent/CN1149648C/zh not_active Expired - Fee Related
- 2000-05-19 CA CA002373580A patent/CA2373580A1/en not_active Abandoned
- 2000-05-19 AU AU52604/00A patent/AU5260400A/en not_active Abandoned
- 2000-05-19 WO PCT/SE2000/001002 patent/WO2000074129A1/en active IP Right Grant
- 2000-05-19 JP JP2001500329A patent/JP2003501802A/ja not_active Withdrawn
- 2000-05-19 KR KR10-2001-7014855A patent/KR100434659B1/ko not_active IP Right Cessation
- 2000-05-30 US US09/583,648 patent/US6329259B1/en not_active Expired - Fee Related
-
2002
- 2002-10-10 HK HK02107412.3A patent/HK1045910A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003501802A (ja) | 2003-01-14 |
| SE9902005L (sv) | 2000-12-01 |
| TW448580B (en) | 2001-08-01 |
| WO2000074129A1 (en) | 2000-12-07 |
| AU5260400A (en) | 2000-12-18 |
| KR100434659B1 (ko) | 2004-06-07 |
| SE9902005D0 (sv) | 1999-05-31 |
| US6329259B1 (en) | 2001-12-11 |
| KR20020032425A (ko) | 2002-05-03 |
| HK1045910A1 (zh) | 2002-12-13 |
| CN1149648C (zh) | 2004-05-12 |
| CN1353862A (zh) | 2002-06-12 |
| EP1192651A1 (en) | 2002-04-03 |
| CA2373580A1 (en) | 2000-12-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed | ||
| NUG | Patent has lapsed |