SE514042C2 - Sensoranordning - Google Patents
SensoranordningInfo
- Publication number
- SE514042C2 SE514042C2 SE9801610A SE9801610A SE514042C2 SE 514042 C2 SE514042 C2 SE 514042C2 SE 9801610 A SE9801610 A SE 9801610A SE 9801610 A SE9801610 A SE 9801610A SE 514042 C2 SE514042 C2 SE 514042C2
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- catalytic
- field effect
- microstructure
- conductive layer
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 30
- 230000003197 catalytic effect Effects 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000007774 longterm Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 cerium dioxide compounds Chemical group 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9801610A SE514042C2 (sv) | 1998-05-08 | 1998-05-08 | Sensoranordning |
| EP99950365A EP1076816A1 (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
| PCT/SE1999/000760 WO1999058964A1 (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
| JP2000548717A JP2002514760A (ja) | 1998-05-08 | 1999-05-06 | ガス検知素子 |
| AU43055/99A AU4305599A (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
| US09/674,871 US6569779B1 (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
| NO20005611A NO322291B1 (no) | 1998-05-08 | 2000-11-07 | Innretning for gassavfoling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9801610A SE514042C2 (sv) | 1998-05-08 | 1998-05-08 | Sensoranordning |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9801610D0 SE9801610D0 (sv) | 1998-05-08 |
| SE9801610L SE9801610L (sv) | 1999-11-09 |
| SE514042C2 true SE514042C2 (sv) | 2000-12-18 |
Family
ID=20411231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9801610A SE514042C2 (sv) | 1998-05-08 | 1998-05-08 | Sensoranordning |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6569779B1 (enExample) |
| EP (1) | EP1076816A1 (enExample) |
| JP (1) | JP2002514760A (enExample) |
| AU (1) | AU4305599A (enExample) |
| NO (1) | NO322291B1 (enExample) |
| SE (1) | SE514042C2 (enExample) |
| WO (1) | WO1999058964A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7274082B2 (en) | 2000-01-19 | 2007-09-25 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
| US7282778B2 (en) | 2000-01-19 | 2007-10-16 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a Schottky barrier |
| CN110383065A (zh) * | 2017-03-14 | 2019-10-25 | 豪夫迈·罗氏有限公司 | 纳米孔阱结构和方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6004835A (en) * | 1997-04-25 | 1999-12-21 | Micron Technology, Inc. | Method of forming integrated circuitry, conductive lines, a conductive grid, a conductive network, an electrical interconnection to anode location and an electrical interconnection with a transistor source/drain region |
| EP1254478A4 (en) * | 2000-01-19 | 2004-12-01 | Adrena Inc | CHEMICAL DETECTOR USING CHEMICALLY INDUCED ELECTRON HOLE PRODUCTION AT A SCHOTTKY BARRIER |
| EP1767934B1 (en) * | 2005-09-21 | 2007-12-05 | Adixen Sensistor AB | Hydrogen gas sensitive semiconductor sensor |
| KR102084734B1 (ko) * | 2020-01-07 | 2020-03-04 | 주식회사 케이디 | 배수관로의 수위 및 유량 측정장치 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2857251A (en) | 1953-01-28 | 1958-10-21 | Atlantic Refining Co | Process and dual-detector apparatus for analyzing gases |
| US3595621A (en) | 1968-09-30 | 1971-07-27 | Anthony John Andreatch | Catalytic analyzer |
| US4169126A (en) | 1976-09-03 | 1979-09-25 | Johnson, Matthey & Co., Limited | Temperature-responsive device |
| US4321322A (en) | 1979-06-18 | 1982-03-23 | Ahnell Joseph E | Pulsed voltammetric detection of microorganisms |
| DE3151891A1 (de) | 1981-12-30 | 1983-07-14 | Zimmer, Günter, Dr.rer. nat., 4600 Dortmund | Halbleiter-sensor fuer die messung der konzentration von teilchen in fluiden |
| CS231026B1 (en) | 1982-09-27 | 1984-09-17 | Lubomir Serak | Method of voltmetric determination of oxygen and sensor to perform this method |
| CH665908A5 (de) | 1983-08-30 | 1988-06-15 | Cerberus Ag | Vorrichtung zum selektiven detektieren der gasfoermigen bestandteile von gasgemischen in luft mittels eines gassensors. |
| US4897162A (en) | 1986-11-14 | 1990-01-30 | The Cleveland Clinic Foundation | Pulse voltammetry |
| DE3729286A1 (de) | 1987-09-02 | 1989-03-16 | Draegerwerk Ag | Messgeraet zur analyse eines gasgemisches |
| JPH0695082B2 (ja) | 1987-10-08 | 1994-11-24 | 新コスモス電機株式会社 | 吸引式オゾンガス検知器 |
| US5244656A (en) * | 1990-05-04 | 1993-09-14 | Wisconsin Alumni Research Foundation | Antigen specific plasmacytomas and antibodies derived therefrom |
| NL9002750A (nl) | 1990-12-13 | 1992-07-01 | Imec Inter Uni Micro Electr | Sensor van het diode type. |
| JPH05308107A (ja) * | 1991-07-01 | 1993-11-19 | Sumitomo Electric Ind Ltd | 半導体装置及びその製作方法 |
| JPH05240838A (ja) | 1992-02-27 | 1993-09-21 | Kagome Co Ltd | 加工飲食品に含まれるジアセチルの測定方法 |
| US5332681A (en) | 1992-06-12 | 1994-07-26 | The United States Of America As Represented By The Secretary Of The Navy | Method of making a semiconductor device by forming a nanochannel mask |
| JP3496307B2 (ja) | 1994-02-18 | 2004-02-09 | 株式会社デンソー | 触媒劣化検知法及び空燃比センサ |
| SE503265C2 (sv) * | 1994-09-23 | 1996-04-29 | Forskarpatent Ab | Förfarande och anordning för gasdetektion |
| US5753934A (en) * | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
| JPH09229945A (ja) * | 1996-02-23 | 1997-09-05 | Canon Inc | マイクロ構造体を支持するエアブリッジ型構造体の製造方法とその雌型基板、並びに、エアブリッジ型構造体とそれを用いたマイクロ構造体およびトンネル電流または微小力検出用のプローブ |
| US5691215A (en) | 1996-08-26 | 1997-11-25 | Industrial Technology Research Institute | Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure |
| GB9819821D0 (en) * | 1998-09-12 | 1998-11-04 | Secr Defence | Improvements relating to micro-machining |
| US6284671B1 (en) * | 1998-11-19 | 2001-09-04 | National Research Council Of Canada | Selective electrochemical process for creating semiconductor nano-and micro-patterns |
| SE524102C2 (sv) | 1999-06-04 | 2004-06-29 | Appliedsensor Sweden Ab | Mikro-hotplate-anordning med integrerad gaskänslig fälteffektsensor |
-
1998
- 1998-05-08 SE SE9801610A patent/SE514042C2/sv unknown
-
1999
- 1999-05-06 WO PCT/SE1999/000760 patent/WO1999058964A1/en not_active Ceased
- 1999-05-06 JP JP2000548717A patent/JP2002514760A/ja not_active Abandoned
- 1999-05-06 US US09/674,871 patent/US6569779B1/en not_active Expired - Fee Related
- 1999-05-06 EP EP99950365A patent/EP1076816A1/en not_active Ceased
- 1999-05-06 AU AU43055/99A patent/AU4305599A/en not_active Abandoned
-
2000
- 2000-11-07 NO NO20005611A patent/NO322291B1/no not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7274082B2 (en) | 2000-01-19 | 2007-09-25 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
| US7282778B2 (en) | 2000-01-19 | 2007-10-16 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a Schottky barrier |
| US7385271B2 (en) | 2000-01-19 | 2008-06-10 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
| US7391056B2 (en) | 2000-01-19 | 2008-06-24 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a Schottky barrier |
| CN110383065A (zh) * | 2017-03-14 | 2019-10-25 | 豪夫迈·罗氏有限公司 | 纳米孔阱结构和方法 |
| CN110383065B (zh) * | 2017-03-14 | 2020-12-29 | 豪夫迈·罗氏有限公司 | 纳米孔阱结构和方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999058964A1 (en) | 1999-11-18 |
| NO20005611L (no) | 2001-01-03 |
| EP1076816A1 (en) | 2001-02-21 |
| NO322291B1 (no) | 2006-09-11 |
| AU4305599A (en) | 1999-11-29 |
| NO20005611D0 (no) | 2000-11-07 |
| SE9801610D0 (sv) | 1998-05-08 |
| SE9801610L (sv) | 1999-11-09 |
| JP2002514760A (ja) | 2002-05-21 |
| US6569779B1 (en) | 2003-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100499048C (zh) | 纳米间隙、纳米场效应晶体管、分子器件和生物传感器 | |
| US9177933B2 (en) | Three-dimensional high surface area electrodes | |
| CN1935632B (zh) | 制造纳米线器件的方法 | |
| WO2005094231A2 (en) | Methods for fabrication of positional and compositionally controlled nanostructures on substrate | |
| CN103424441B (zh) | 制备于柔度可控基底上的连通性可调的钯基氢气传感器及其制作方法 | |
| CN105873249B (zh) | 加热器、传感器、智能终端及加热器的制作方法 | |
| CN107993956B (zh) | 线距标准样片的制备方法 | |
| US7410904B2 (en) | Sensor produced using imprint lithography | |
| SE514042C2 (sv) | Sensoranordning | |
| JPH0321901B2 (enExample) | ||
| JPH07321345A (ja) | マイクロメカニズム構造体を形成する方法 | |
| CN204008531U (zh) | 一种具有绝热沟槽的mems气体传感器 | |
| CN104048592B (zh) | 一种利用电流变化检测刻蚀槽深的方法 | |
| US20140061912A1 (en) | Patterned Graphene Structures on Silicon Carbide | |
| KR101147314B1 (ko) | 트렌치를 이용한 수직 전극 구조, 및 그 제조 방법 | |
| CN104165902B (zh) | 一种具有绝热沟槽的mems气体传感器及其加工方法 | |
| CN118209755A (zh) | 一种二维材料薄膜悬浮二氧化硅质量块的加速度传感器及其制备方法 | |
| CN101804960B (zh) | 一种超微锥电极阵列及其制备方法 | |
| JPH0290644A (ja) | 半導体装置の製造方法 | |
| CN110620033B (zh) | 一种金属纳米线或片的制作方法及纳米线或片 | |
| CN206282823U (zh) | 一种圆片级制备硅纳米线阵列场效应管 | |
| RU2655651C1 (ru) | Способ получения нанолитографических рисунков с кристаллической структурой со сверхразвитой поверхностью | |
| CN103545353B (zh) | 一种电极加热极及其加工工艺 | |
| JP7730020B2 (ja) | グラフェン光センサの製造方法 | |
| JPH04370929A (ja) | ドライエッチング方法 |