SE9801610L - Sensoranordning - Google Patents

Sensoranordning

Info

Publication number
SE9801610L
SE9801610L SE9801610A SE9801610A SE9801610L SE 9801610 L SE9801610 L SE 9801610L SE 9801610 A SE9801610 A SE 9801610A SE 9801610 A SE9801610 A SE 9801610A SE 9801610 L SE9801610 L SE 9801610L
Authority
SE
Sweden
Prior art keywords
layer
conductive layer
conductive
layers
sensor device
Prior art date
Application number
SE9801610A
Other languages
English (en)
Other versions
SE514042C2 (sv
SE9801610D0 (sv
Inventor
Ingemar Lundstroem
Per Maartensson
Original Assignee
Nordic Sensor Technologies Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordic Sensor Technologies Ab filed Critical Nordic Sensor Technologies Ab
Priority to SE9801610A priority Critical patent/SE514042C2/sv
Publication of SE9801610D0 publication Critical patent/SE9801610D0/sv
Priority to US09/674,871 priority patent/US6569779B1/en
Priority to AU43055/99A priority patent/AU4305599A/en
Priority to EP99950365A priority patent/EP1076816A1/en
Priority to JP2000548717A priority patent/JP2002514760A/ja
Priority to PCT/SE1999/000760 priority patent/WO1999058964A1/en
Publication of SE9801610L publication Critical patent/SE9801610L/sv
Priority to NO20005611A priority patent/NO322291B1/no
Publication of SE514042C2 publication Critical patent/SE514042C2/sv

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
SE9801610A 1998-05-08 1998-05-08 Sensoranordning SE514042C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9801610A SE514042C2 (sv) 1998-05-08 1998-05-08 Sensoranordning
US09/674,871 US6569779B1 (en) 1998-05-08 1999-05-06 Device for gas sensing
AU43055/99A AU4305599A (en) 1998-05-08 1999-05-06 Device for gas sensing
EP99950365A EP1076816A1 (en) 1998-05-08 1999-05-06 Device for gas sensing
JP2000548717A JP2002514760A (ja) 1998-05-08 1999-05-06 ガス検知素子
PCT/SE1999/000760 WO1999058964A1 (en) 1998-05-08 1999-05-06 Device for gas sensing
NO20005611A NO322291B1 (no) 1998-05-08 2000-11-07 Innretning for gassavfoling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9801610A SE514042C2 (sv) 1998-05-08 1998-05-08 Sensoranordning

Publications (3)

Publication Number Publication Date
SE9801610D0 SE9801610D0 (sv) 1998-05-08
SE9801610L true SE9801610L (sv) 1999-11-09
SE514042C2 SE514042C2 (sv) 2000-12-18

Family

ID=20411231

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9801610A SE514042C2 (sv) 1998-05-08 1998-05-08 Sensoranordning

Country Status (7)

Country Link
US (1) US6569779B1 (sv)
EP (1) EP1076816A1 (sv)
JP (1) JP2002514760A (sv)
AU (1) AU4305599A (sv)
NO (1) NO322291B1 (sv)
SE (1) SE514042C2 (sv)
WO (1) WO1999058964A1 (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6004835A (en) * 1997-04-25 1999-12-21 Micron Technology, Inc. Method of forming integrated circuitry, conductive lines, a conductive grid, a conductive network, an electrical interconnection to anode location and an electrical interconnection with a transistor source/drain region
US6903433B1 (en) 2000-01-19 2005-06-07 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US7274082B2 (en) 2000-01-19 2007-09-25 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
JP2003520351A (ja) * 2000-01-19 2003-07-02 ザ・リージェンツ・オブ・ザ・ユニバーシティー・オブ・カリフォルニア ショットキー・バリヤで化学的に誘起された電子孔を用いる化学センサー
ATE380341T1 (de) * 2005-09-21 2007-12-15 Adixen Sensistor Ab Wasserstoffgassensitiver halbleitersensor
US10739299B2 (en) * 2017-03-14 2020-08-11 Roche Sequencing Solutions, Inc. Nanopore well structures and methods
KR102084734B1 (ko) * 2020-01-07 2020-03-04 주식회사 케이디 배수관로의 수위 및 유량 측정장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2857251A (en) 1953-01-28 1958-10-21 Atlantic Refining Co Process and dual-detector apparatus for analyzing gases
US3595621A (en) 1968-09-30 1971-07-27 Anthony John Andreatch Catalytic analyzer
US4169126A (en) 1976-09-03 1979-09-25 Johnson, Matthey & Co., Limited Temperature-responsive device
US4321322A (en) 1979-06-18 1982-03-23 Ahnell Joseph E Pulsed voltammetric detection of microorganisms
DE3151891A1 (de) * 1981-12-30 1983-07-14 Zimmer, Günter, Dr.rer. nat., 4600 Dortmund Halbleiter-sensor fuer die messung der konzentration von teilchen in fluiden
CS231026B1 (en) 1982-09-27 1984-09-17 Lubomir Serak Method of voltmetric determination of oxygen and sensor to perform this method
CH665908A5 (de) 1983-08-30 1988-06-15 Cerberus Ag Vorrichtung zum selektiven detektieren der gasfoermigen bestandteile von gasgemischen in luft mittels eines gassensors.
US4897162A (en) 1986-11-14 1990-01-30 The Cleveland Clinic Foundation Pulse voltammetry
DE3729286A1 (de) 1987-09-02 1989-03-16 Draegerwerk Ag Messgeraet zur analyse eines gasgemisches
JPH0695082B2 (ja) 1987-10-08 1994-11-24 新コスモス電機株式会社 吸引式オゾンガス検知器
US5244656A (en) * 1990-05-04 1993-09-14 Wisconsin Alumni Research Foundation Antigen specific plasmacytomas and antibodies derived therefrom
NL9002750A (nl) * 1990-12-13 1992-07-01 Imec Inter Uni Micro Electr Sensor van het diode type.
JPH05308107A (ja) * 1991-07-01 1993-11-19 Sumitomo Electric Ind Ltd 半導体装置及びその製作方法
JPH05240838A (ja) 1992-02-27 1993-09-21 Kagome Co Ltd 加工飲食品に含まれるジアセチルの測定方法
US5332681A (en) 1992-06-12 1994-07-26 The United States Of America As Represented By The Secretary Of The Navy Method of making a semiconductor device by forming a nanochannel mask
JP3496307B2 (ja) 1994-02-18 2004-02-09 株式会社デンソー 触媒劣化検知法及び空燃比センサ
SE503265C2 (sv) 1994-09-23 1996-04-29 Forskarpatent Ab Förfarande och anordning för gasdetektion
US5753934A (en) * 1995-08-04 1998-05-19 Tok Corporation Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
JPH09229945A (ja) * 1996-02-23 1997-09-05 Canon Inc マイクロ構造体を支持するエアブリッジ型構造体の製造方法とその雌型基板、並びに、エアブリッジ型構造体とそれを用いたマイクロ構造体およびトンネル電流または微小力検出用のプローブ
US5691215A (en) * 1996-08-26 1997-11-25 Industrial Technology Research Institute Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure
GB9819821D0 (en) * 1998-09-12 1998-11-04 Secr Defence Improvements relating to micro-machining
US6284671B1 (en) * 1998-11-19 2001-09-04 National Research Council Of Canada Selective electrochemical process for creating semiconductor nano-and micro-patterns
SE524102C2 (sv) 1999-06-04 2004-06-29 Appliedsensor Sweden Ab Mikro-hotplate-anordning med integrerad gaskänslig fälteffektsensor

Also Published As

Publication number Publication date
EP1076816A1 (en) 2001-02-21
NO20005611D0 (no) 2000-11-07
SE514042C2 (sv) 2000-12-18
AU4305599A (en) 1999-11-29
NO322291B1 (no) 2006-09-11
SE9801610D0 (sv) 1998-05-08
US6569779B1 (en) 2003-05-27
NO20005611L (no) 2001-01-03
WO1999058964A1 (en) 1999-11-18
JP2002514760A (ja) 2002-05-21

Similar Documents

Publication Publication Date Title
DE69929401D1 (de) Absorbierender Artikel mit Kissenlage
DE69932965D1 (de) Elektronisches Gerät mit veränderlicher Tastatur
ATE309618T1 (de) Elektronisches kühlgerät
DE69910021D1 (de) Gemusterter gegenstand mit abwechselnden hydrophilen und hydrophoben oberflächenregionen
ATE262771T1 (de) Kombiniertes sensor- und heizelement
KR960009109A (ko) 표면 확산에 의한 높은 종횡비 및 낮은 비저항의 라인/비어
EP1684358A3 (en) High voltage SOI semiconductor device
DE69602114D1 (de) Graben-Feldeffekttransistor mit PN-Verarmungsschicht-Barriere
NO20003003L (no) Miniatyrisert sensor
DE602004032392D1 (de) Dünnfilm-speicherbaustein mit variablem widerstand
ATE313090T1 (de) Diamant-strahlungs-detektor
ATE381782T1 (de) Halbleitersubstrat mit einer neutronenkonvertierungsschicht
SE9801610D0 (sv) Sensoranordning
WO2004001854A3 (en) Semiconductor device with edge structure
HK1079281A1 (en) Surface layer affinity-chromatography
DE59913523D1 (de) Magnetoresistives sensorelement mit wahlweiser magnetisierungsausrichtung der biasschicht
DE69915100D1 (de) Mess- und regeleinrichtung bezüglich der dicke einer silikonschicht
DE69935390D1 (de) Akustisches Oberflächenwellensubstrat mit hartem Kohlenstoff-Film
SE9600199D0 (sv) A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
DE60040798D1 (de) Halbleiteranordnung mit Driftbereichen mit entgegengesetzten Leitungstypen
SE0004377D0 (sv) A semiconductor device and a method for production thereof
DE59900535D1 (de) Wasserstoffsensor
DE60207452D1 (de) Anzeigefläche mit elektrisch leitender Verbundschicht und Polymerdispergierter Flüssigkristallschicht
DE69108121D1 (de) Dotiertes KTiOP04 mit niedriger Leitfähigkeit und darauf basierende Bauelemente.
KR910019152A (ko) 실리콘 웨이퍼