SE9801610L - Sensoranordning - Google Patents
SensoranordningInfo
- Publication number
- SE9801610L SE9801610L SE9801610A SE9801610A SE9801610L SE 9801610 L SE9801610 L SE 9801610L SE 9801610 A SE9801610 A SE 9801610A SE 9801610 A SE9801610 A SE 9801610A SE 9801610 L SE9801610 L SE 9801610L
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- conductive layer
- conductive
- layers
- sensor device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9801610A SE514042C2 (sv) | 1998-05-08 | 1998-05-08 | Sensoranordning |
US09/674,871 US6569779B1 (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
AU43055/99A AU4305599A (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
EP99950365A EP1076816A1 (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
JP2000548717A JP2002514760A (ja) | 1998-05-08 | 1999-05-06 | ガス検知素子 |
PCT/SE1999/000760 WO1999058964A1 (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
NO20005611A NO322291B1 (no) | 1998-05-08 | 2000-11-07 | Innretning for gassavfoling |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9801610A SE514042C2 (sv) | 1998-05-08 | 1998-05-08 | Sensoranordning |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9801610D0 SE9801610D0 (sv) | 1998-05-08 |
SE9801610L true SE9801610L (sv) | 1999-11-09 |
SE514042C2 SE514042C2 (sv) | 2000-12-18 |
Family
ID=20411231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9801610A SE514042C2 (sv) | 1998-05-08 | 1998-05-08 | Sensoranordning |
Country Status (7)
Country | Link |
---|---|
US (1) | US6569779B1 (sv) |
EP (1) | EP1076816A1 (sv) |
JP (1) | JP2002514760A (sv) |
AU (1) | AU4305599A (sv) |
NO (1) | NO322291B1 (sv) |
SE (1) | SE514042C2 (sv) |
WO (1) | WO1999058964A1 (sv) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6004835A (en) * | 1997-04-25 | 1999-12-21 | Micron Technology, Inc. | Method of forming integrated circuitry, conductive lines, a conductive grid, a conductive network, an electrical interconnection to anode location and an electrical interconnection with a transistor source/drain region |
US6903433B1 (en) | 2000-01-19 | 2005-06-07 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
US7274082B2 (en) | 2000-01-19 | 2007-09-25 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
JP2003520351A (ja) * | 2000-01-19 | 2003-07-02 | ザ・リージェンツ・オブ・ザ・ユニバーシティー・オブ・カリフォルニア | ショットキー・バリヤで化学的に誘起された電子孔を用いる化学センサー |
ATE380341T1 (de) * | 2005-09-21 | 2007-12-15 | Adixen Sensistor Ab | Wasserstoffgassensitiver halbleitersensor |
US10739299B2 (en) * | 2017-03-14 | 2020-08-11 | Roche Sequencing Solutions, Inc. | Nanopore well structures and methods |
KR102084734B1 (ko) * | 2020-01-07 | 2020-03-04 | 주식회사 케이디 | 배수관로의 수위 및 유량 측정장치 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2857251A (en) | 1953-01-28 | 1958-10-21 | Atlantic Refining Co | Process and dual-detector apparatus for analyzing gases |
US3595621A (en) | 1968-09-30 | 1971-07-27 | Anthony John Andreatch | Catalytic analyzer |
US4169126A (en) | 1976-09-03 | 1979-09-25 | Johnson, Matthey & Co., Limited | Temperature-responsive device |
US4321322A (en) | 1979-06-18 | 1982-03-23 | Ahnell Joseph E | Pulsed voltammetric detection of microorganisms |
DE3151891A1 (de) * | 1981-12-30 | 1983-07-14 | Zimmer, Günter, Dr.rer. nat., 4600 Dortmund | Halbleiter-sensor fuer die messung der konzentration von teilchen in fluiden |
CS231026B1 (en) | 1982-09-27 | 1984-09-17 | Lubomir Serak | Method of voltmetric determination of oxygen and sensor to perform this method |
CH665908A5 (de) | 1983-08-30 | 1988-06-15 | Cerberus Ag | Vorrichtung zum selektiven detektieren der gasfoermigen bestandteile von gasgemischen in luft mittels eines gassensors. |
US4897162A (en) | 1986-11-14 | 1990-01-30 | The Cleveland Clinic Foundation | Pulse voltammetry |
DE3729286A1 (de) | 1987-09-02 | 1989-03-16 | Draegerwerk Ag | Messgeraet zur analyse eines gasgemisches |
JPH0695082B2 (ja) | 1987-10-08 | 1994-11-24 | 新コスモス電機株式会社 | 吸引式オゾンガス検知器 |
US5244656A (en) * | 1990-05-04 | 1993-09-14 | Wisconsin Alumni Research Foundation | Antigen specific plasmacytomas and antibodies derived therefrom |
NL9002750A (nl) * | 1990-12-13 | 1992-07-01 | Imec Inter Uni Micro Electr | Sensor van het diode type. |
JPH05308107A (ja) * | 1991-07-01 | 1993-11-19 | Sumitomo Electric Ind Ltd | 半導体装置及びその製作方法 |
JPH05240838A (ja) | 1992-02-27 | 1993-09-21 | Kagome Co Ltd | 加工飲食品に含まれるジアセチルの測定方法 |
US5332681A (en) | 1992-06-12 | 1994-07-26 | The United States Of America As Represented By The Secretary Of The Navy | Method of making a semiconductor device by forming a nanochannel mask |
JP3496307B2 (ja) | 1994-02-18 | 2004-02-09 | 株式会社デンソー | 触媒劣化検知法及び空燃比センサ |
SE503265C2 (sv) | 1994-09-23 | 1996-04-29 | Forskarpatent Ab | Förfarande och anordning för gasdetektion |
US5753934A (en) * | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
JPH09229945A (ja) * | 1996-02-23 | 1997-09-05 | Canon Inc | マイクロ構造体を支持するエアブリッジ型構造体の製造方法とその雌型基板、並びに、エアブリッジ型構造体とそれを用いたマイクロ構造体およびトンネル電流または微小力検出用のプローブ |
US5691215A (en) * | 1996-08-26 | 1997-11-25 | Industrial Technology Research Institute | Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure |
GB9819821D0 (en) * | 1998-09-12 | 1998-11-04 | Secr Defence | Improvements relating to micro-machining |
US6284671B1 (en) * | 1998-11-19 | 2001-09-04 | National Research Council Of Canada | Selective electrochemical process for creating semiconductor nano-and micro-patterns |
SE524102C2 (sv) | 1999-06-04 | 2004-06-29 | Appliedsensor Sweden Ab | Mikro-hotplate-anordning med integrerad gaskänslig fälteffektsensor |
-
1998
- 1998-05-08 SE SE9801610A patent/SE514042C2/sv unknown
-
1999
- 1999-05-06 WO PCT/SE1999/000760 patent/WO1999058964A1/en active Application Filing
- 1999-05-06 US US09/674,871 patent/US6569779B1/en not_active Expired - Fee Related
- 1999-05-06 AU AU43055/99A patent/AU4305599A/en not_active Abandoned
- 1999-05-06 EP EP99950365A patent/EP1076816A1/en not_active Ceased
- 1999-05-06 JP JP2000548717A patent/JP2002514760A/ja not_active Abandoned
-
2000
- 2000-11-07 NO NO20005611A patent/NO322291B1/no not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1076816A1 (en) | 2001-02-21 |
NO20005611D0 (no) | 2000-11-07 |
SE514042C2 (sv) | 2000-12-18 |
AU4305599A (en) | 1999-11-29 |
NO322291B1 (no) | 2006-09-11 |
SE9801610D0 (sv) | 1998-05-08 |
US6569779B1 (en) | 2003-05-27 |
NO20005611L (no) | 2001-01-03 |
WO1999058964A1 (en) | 1999-11-18 |
JP2002514760A (ja) | 2002-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69929401D1 (de) | Absorbierender Artikel mit Kissenlage | |
DE69932965D1 (de) | Elektronisches Gerät mit veränderlicher Tastatur | |
ATE309618T1 (de) | Elektronisches kühlgerät | |
DE69910021D1 (de) | Gemusterter gegenstand mit abwechselnden hydrophilen und hydrophoben oberflächenregionen | |
ATE262771T1 (de) | Kombiniertes sensor- und heizelement | |
KR960009109A (ko) | 표면 확산에 의한 높은 종횡비 및 낮은 비저항의 라인/비어 | |
EP1684358A3 (en) | High voltage SOI semiconductor device | |
DE69602114D1 (de) | Graben-Feldeffekttransistor mit PN-Verarmungsschicht-Barriere | |
NO20003003L (no) | Miniatyrisert sensor | |
DE602004032392D1 (de) | Dünnfilm-speicherbaustein mit variablem widerstand | |
ATE313090T1 (de) | Diamant-strahlungs-detektor | |
ATE381782T1 (de) | Halbleitersubstrat mit einer neutronenkonvertierungsschicht | |
SE9801610D0 (sv) | Sensoranordning | |
WO2004001854A3 (en) | Semiconductor device with edge structure | |
HK1079281A1 (en) | Surface layer affinity-chromatography | |
DE59913523D1 (de) | Magnetoresistives sensorelement mit wahlweiser magnetisierungsausrichtung der biasschicht | |
DE69915100D1 (de) | Mess- und regeleinrichtung bezüglich der dicke einer silikonschicht | |
DE69935390D1 (de) | Akustisches Oberflächenwellensubstrat mit hartem Kohlenstoff-Film | |
SE9600199D0 (sv) | A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer | |
DE60040798D1 (de) | Halbleiteranordnung mit Driftbereichen mit entgegengesetzten Leitungstypen | |
SE0004377D0 (sv) | A semiconductor device and a method for production thereof | |
DE59900535D1 (de) | Wasserstoffsensor | |
DE60207452D1 (de) | Anzeigefläche mit elektrisch leitender Verbundschicht und Polymerdispergierter Flüssigkristallschicht | |
DE69108121D1 (de) | Dotiertes KTiOP04 mit niedriger Leitfähigkeit und darauf basierende Bauelemente. | |
KR910019152A (ko) | 실리콘 웨이퍼 |