SE504916C2 - Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt - Google Patents

Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt

Info

Publication number
SE504916C2
SE504916C2 SE9500152A SE9500152A SE504916C2 SE 504916 C2 SE504916 C2 SE 504916C2 SE 9500152 A SE9500152 A SE 9500152A SE 9500152 A SE9500152 A SE 9500152A SE 504916 C2 SE504916 C2 SE 504916C2
Authority
SE
Sweden
Prior art keywords
ohmic contact
layers
layer
deposited
aluminum
Prior art date
Application number
SE9500152A
Other languages
English (en)
Swedish (sv)
Other versions
SE9500152D0 (sv
SE9500152L (sv
Inventor
Bertil Kronlund
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9500152A priority Critical patent/SE504916C2/sv
Publication of SE9500152D0 publication Critical patent/SE9500152D0/xx
Priority to PCT/SE1996/000035 priority patent/WO1996022611A1/fr
Priority to ES96901172T priority patent/ES2160799T3/es
Priority to JP52220196A priority patent/JP3930561B2/ja
Priority to KR1019970704752A priority patent/KR100406247B1/ko
Priority to AU44995/96A priority patent/AU4499596A/en
Priority to DE69613674T priority patent/DE69613674T2/de
Priority to CN96191499A priority patent/CN1088256C/zh
Priority to CA002210222A priority patent/CA2210222A1/fr
Priority to US08/875,038 priority patent/US5877077A/en
Priority to EP96901172A priority patent/EP0804802B1/fr
Publication of SE9500152L publication Critical patent/SE9500152L/xx
Publication of SE504916C2 publication Critical patent/SE504916C2/sv
Priority to FI973555A priority patent/FI973555A0/fi
Priority to HK98109120A priority patent/HK1008264A1/xx
Priority to US09/151,277 priority patent/US6043513A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608Silicon carbide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048Making electrodes
    • H01L21/0485Ohmic electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66053Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/931Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SE9500152A 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt SE504916C2 (sv)

Priority Applications (14)

Application Number Priority Date Filing Date Title
SE9500152A SE504916C2 (sv) 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
EP96901172A EP0804802B1 (fr) 1995-01-18 1996-01-17 Procede de fabrication d'un contact ohmique pour un dispositif a semi-conducteur
DE69613674T DE69613674T2 (de) 1995-01-18 1996-01-17 Verfahren zur herstellung eines ohmschen kontakts für eine halbleitervorrichtung
CA002210222A CA2210222A1 (fr) 1995-01-18 1996-01-17 Procede de fabrication d'un contact ohmique et dispositif a semi-conducteur equipe d'un tel contact ohmique
JP52220196A JP3930561B2 (ja) 1995-01-18 1996-01-17 オーム接触体およびこのようなオーム接触体を備えた半導体デバイスを製造する方法
KR1019970704752A KR100406247B1 (ko) 1995-01-18 1996-01-17 옴접촉체를제조하는방법및이러한옴접촉체를구비한반도체소자
AU44995/96A AU4499596A (en) 1995-01-18 1996-01-17 A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
PCT/SE1996/000035 WO1996022611A1 (fr) 1995-01-18 1996-01-17 Procede de fabrication d'un contact ohmique et dispositif a semi-conducteur equipe d'un tel contact ohmique
CN96191499A CN1088256C (zh) 1995-01-18 1996-01-17 产生欧姆接触及制造设有该种欧姆接触的半导体器件的方法
ES96901172T ES2160799T3 (es) 1995-01-18 1996-01-17 Procedimiento de fabricacion de un contacto ohmico para un dispositivo semiconductor.
US08/875,038 US5877077A (en) 1995-01-18 1996-01-17 Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
FI973555A FI973555A0 (fi) 1995-01-18 1997-08-29 Menetelmä ohmisen kontaktin tuottamiseksi sekä tällaisella ohmisella kontaktilla varustettu puolijohdeväline
HK98109120A HK1008264A1 (en) 1995-01-18 1998-07-14 A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
US09/151,277 US6043513A (en) 1995-01-18 1998-09-11 Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9500152A SE504916C2 (sv) 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt

Publications (3)

Publication Number Publication Date
SE9500152D0 SE9500152D0 (sv) 1995-01-18
SE9500152L SE9500152L (sv) 1996-07-19
SE504916C2 true SE504916C2 (sv) 1997-05-26

Family

ID=20396858

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9500152A SE504916C2 (sv) 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt

Country Status (13)

Country Link
US (2) US5877077A (fr)
EP (1) EP0804802B1 (fr)
JP (1) JP3930561B2 (fr)
KR (1) KR100406247B1 (fr)
CN (1) CN1088256C (fr)
AU (1) AU4499596A (fr)
CA (1) CA2210222A1 (fr)
DE (1) DE69613674T2 (fr)
ES (1) ES2160799T3 (fr)
FI (1) FI973555A0 (fr)
HK (1) HK1008264A1 (fr)
SE (1) SE504916C2 (fr)
WO (1) WO1996022611A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6599644B1 (en) 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
JP4545975B2 (ja) * 2001-03-27 2010-09-15 日本特殊陶業株式会社 炭化珪素半導体用電極の製造方法、及び炭化珪素半導体用電極を備える炭化珪素半導体素子の製造方法
US7297626B1 (en) 2001-08-27 2007-11-20 United States Of America As Represented By The Secretary Of The Army Process for nickel silicide Ohmic contacts to n-SiC
JP4036075B2 (ja) * 2002-10-29 2008-01-23 豊田合成株式会社 p型SiC用電極の製造方法
US6815323B1 (en) 2003-01-10 2004-11-09 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on n-type silicon carbide using carbon films
US6747291B1 (en) 2003-01-10 2004-06-08 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on p-type silicon carbide using carbon films
US20060006393A1 (en) * 2004-07-06 2006-01-12 Ward Allan Iii Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
EP2280417B1 (fr) 2008-04-15 2015-07-22 Sumitomo Electric Industries, Ltd. Dispositif à semi-conducteur et son procédé de fabrication
JP5449786B2 (ja) * 2009-01-15 2014-03-19 昭和電工株式会社 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法
JP4858791B2 (ja) * 2009-05-22 2012-01-18 住友電気工業株式会社 半導体装置およびその製造方法
JP5581642B2 (ja) * 2009-10-05 2014-09-03 住友電気工業株式会社 半導体装置の製造方法
KR20120065962A (ko) * 2009-10-05 2012-06-21 스미토모덴키고교가부시키가이샤 반도체 장치
KR20130056844A (ko) * 2010-04-14 2013-05-30 스미토모덴키고교가부시키가이샤 탄화규소 반도체 장치 및 그 제조 방법
FR2974944B1 (fr) 2011-05-02 2013-06-14 Commissariat Energie Atomique Procédé de formation d'une fracture dans un matériau
US9099578B2 (en) * 2012-06-04 2015-08-04 Nusola, Inc. Structure for creating ohmic contact in semiconductor devices and methods for manufacture
JP5949305B2 (ja) * 2012-08-13 2016-07-06 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2014038899A (ja) 2012-08-13 2014-02-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN102931054B (zh) * 2012-08-21 2014-12-17 中国科学院微电子研究所 一种实现P型SiC材料低温欧姆合金退火的方法
CN102931224A (zh) * 2012-08-21 2013-02-13 中国科学院微电子研究所 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法
US9397181B2 (en) 2014-03-19 2016-07-19 International Business Machines Corporation Diffusion-controlled oxygen depletion of semiconductor contact interface
US9443772B2 (en) 2014-03-19 2016-09-13 Globalfoundries Inc. Diffusion-controlled semiconductor contact creation
US10269714B2 (en) 2016-09-06 2019-04-23 International Business Machines Corporation Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492719A (en) * 1967-03-10 1970-02-03 Westinghouse Electric Corp Evaporated metal contacts for the fabrication of silicon carbide devices
JPS6271271A (ja) * 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
CA2008176A1 (fr) * 1989-01-25 1990-07-25 John W. Palmour Diode de schottky au carbure de silicium et methode de fabrication de cette diode
JP2509713B2 (ja) * 1989-10-18 1996-06-26 シャープ株式会社 炭化珪素半導体装置およびその製造方法
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
US5561829A (en) * 1993-07-22 1996-10-01 Aluminum Company Of America Method of producing structural metal matrix composite products from a blend of powders
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
JP3085078B2 (ja) * 1994-03-04 2000-09-04 富士電機株式会社 炭化けい素電子デバイスの製造方法
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Also Published As

Publication number Publication date
FI973555A (fi) 1997-08-29
JP3930561B2 (ja) 2007-06-13
DE69613674D1 (de) 2001-08-09
SE9500152D0 (sv) 1995-01-18
US5877077A (en) 1999-03-02
SE9500152L (sv) 1996-07-19
WO1996022611A1 (fr) 1996-07-25
US6043513A (en) 2000-03-28
DE69613674T2 (de) 2002-04-25
EP0804802B1 (fr) 2001-07-04
CN1088256C (zh) 2002-07-24
KR100406247B1 (ko) 2004-03-18
JPH10512716A (ja) 1998-12-02
HK1008264A1 (en) 1999-05-07
CN1172551A (zh) 1998-02-04
EP0804802A1 (fr) 1997-11-05
AU4499596A (en) 1996-08-07
FI973555A0 (fi) 1997-08-29
ES2160799T3 (es) 2001-11-16
CA2210222A1 (fr) 1996-07-25

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